JP2011172329A - 回路基板及びそれを用いた電力変換装置 - Google Patents
回路基板及びそれを用いた電力変換装置 Download PDFInfo
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Abstract
【解決手段】電力変換装置のパワーモジュールに搭載されパワー半導体素子を実装する絶縁基板において、絶縁基板に寄生する容量を意図的に用い、インダクタと並列共振器を形成する。インダクタは外付部品実装もしくは絶縁基板内の配線パターンにより構成する。この構成により、絶縁基板に電気的に高インピーダンス特性を持たせられ、絶縁基板を介して流出するコモンモード電流すなわちそれに起因する電磁界放射を抑制できる。
【選択図】 図8(a)
Description
この直列共振器は、図12に示される、共振器のインピーダンス概略図に破線で示したような特性を持つ。共振周波数fresoにおいて低インピーダンスとなる領域が存在し、fresoを境界にして低域側で容量性、高域側で誘導性に振舞う。このfresoは絶縁基板の寄生容量350と金属ベース及び接地面の寄生インダクタ349により定まる。
と低インピーダンスになる零周波数
を持つ。共振器のQ値が無限大であると仮定した場合、LC共振器の|Z|は、極周波数f∞において極大値(並列共振に見える)、零周波数fzeroにおいて極小値(直列共振に見える)を示すことになり、極周波数f∞では絶縁基板334を介したコモンモード電流(漏洩電流)を無限小まで低減できるが、零周波数fzeroにおいてはこの周波数成分を持ったコモンモード電流が絶縁基板を貫通して流れる危険性がある。
その共振器のインピーダンス特性|Z|は図12の概略図中の実線で示すよう、高インピーダンスになる極周波数
と低インピーダンスになる零周波数
を持つ。
と低インピーダンスになる零周波数
を持つ。また、極周波数f∞及び零周波数fzeroを決定するための、平型インダクタ(L)355及び第一の絶縁基板内の寄生容量(Cp)353と第二の絶縁基板内の寄生容量(Cs)354の構造上の決定法は、前記第二の発明構成と同様である。本発明構成によると、実装面積が増大するという欠点はあるが、第二の発明構成で前述したf∞≫fzeroとするためのCs≫Cpとなる条件の適合範囲が広がるという利点がある。
Claims (13)
- 車両の駆動用モータに交流電流を出力するインバータ装置に備えられる回路基板であって、
絶縁層と、
インバータ回路を構成する上アーム及び下アームのうち下アームを構成する半導体チップを実装し、かつ前記絶縁層の一方の面に形成された第1配線導体と、
前記絶縁層を挟んで、前記第1配線導体とは反対側の他方の面に形成され、かつ前記車両のアースに接続される第2配線導体と、
前記第1配線導体と前記第2配線導体との間に発生する寄生容量と並列に接続されることにより、当該寄生容量と並列共振器を構成するためのインダクタと、
を備える回路基板。 - 請求項1に記載された回路基板であって、
前記絶縁層の前記一方の面に形成された中継配線導体を備え、
前記インダクタは、当該インダクタの一方の端子が前記第2配線導体に接続され、当該インダクタの他方の端子が前記中継配線導体に接続される外付け用チップインダクタである回路基板。 - 請求項2に記載された回路基板であって、
前記中継配線導体に、前記インダクタと直列に接続される外付け用チップコンデンサを接続する回路基板。 - 請求項1に記載された回路基板であって、
前記インダクタは、前記絶縁層の一方側の表面に形成され、当該インダクタの一端部から伸びる配線パターンが、他端部を中心として当該他端部に近づくように屈曲又は湾曲しながら渦状に形成されることによりインダクタンス成分を有するように構成される回路基板。 - 請求項2または3に記載されたいずれかの回路基板であって、
前記絶縁層の一方の面に形成された前記中継配線導体と、前記絶縁層の他方の面に形成する前記第2配線導体と、を電気的に接続し、かつ前記絶縁層を貫通させる接続導体を備える回路基板。 - 請求項5に記載された回路基板であって、
前記接続導体は、前記絶縁層の一方の導体面側から他方の導体面側に伸びるスルーホールである回路基板。 - 車両の駆動用モータに交流電流を出力するインバータ装置に備えられる回路基板であって、
絶縁層と、
インバータ回路部を構成する上アーム及び下アームのうち下アームを構成する半導体チップを実装し、かつ前記絶縁層の一方の面に形成された第1配線導体と、
前記絶縁層を挟んで、前記第1配線導体とは反対側の他方の面に形成され、かつ前記車両のアースに接続される第2配線導体と、
前記絶縁層内に形成され、かつ一方の面が前記第1配線導体と対向され、さらに他方の面が前記第2配線導体と対向するように配置される中間導体と、
前記第1配線導体と前記中間導体との間に蓄えられる寄生容量と並列に接続され、かつ前記第2配線導体と前記中間導体との間に発生する寄生容量と直列に接続されることにより、当該寄生容量と並列共振器を構成するためのインダクタと、
を備えた回路基板。 - 請求項7に記載された回路基板であって、
前記インダクタは、前記絶縁層の一方の面に形成された第1配線導体を用いて形成され、当該インダクタの一端部から伸びる配線パターンが、他端部を中心として当該他端部に近づくように屈曲または湾曲しながら渦状に形成されることによりインダクタンス成分を有するように構成される回路基板。 - 請求項7に記載された回路基板であって、
前記インダクタは、前記絶縁層内に形成された中間導体を用いて形成され、当該インダクタの一端部から伸びる配線パターンが、他端部を中心として当該他端部に近づくように屈曲または湾曲しながら渦状に形成されることによりインダクタンス成分を有するように構成される回路基板。 - 請求項9に記載の回路基板であって、
前記絶縁層の前記一方の面に形成された中継配線導体と、
一方の端子が前記中間導体に接続され、かつ他方の端子が前記中継配線導体に接続され、前記インダクタと直列に接続される外付け用チップインダクタと、
を備える回路基板。 - 車両の駆動用モータに交流電流を出力するインバータ回路と、
前記インバータ回路を実装するための回路基板と、
前記インバータ回路と前記回路基板を収納し、かつ前記車両のアースに接続される金属筐体と、を備え、
前記回路基板は、
絶縁層と、
インバータ回路を構成する上アーム及び下アームのうち下アームを構成する半導体チップを実装し、かつ前記絶縁層の一方の面に形成された第1配線導体と、
前記絶縁層を挟んで、前記第1配線導体とは反対側の他方の面に形成され、かつ前記金属筐体に接続される第2配線導体と、
前記第1配線導体と前記第2配線導体との間に発生する寄生容量と並列に接続されることにより、当該寄生容量と並列共振器を構成するためのインダクタと、
を備える電力変換装置。 - 車両の駆動用モータに交流電流を出力するインバータ回路と、
前記インバータ回路を実装するための回路基板と、
前記インバータ回路と前記回路基板を収納し、かつ前記車両のアースに接続される金属筐体と、を備え、
前記回路基板は、
絶縁層と、
インバータ回路を構成する上アーム及び下アームのうち下アームを構成する半導体チップを実装し、かつ前記絶縁層の一方の面に配線された第1配線導体と、
前記絶縁層を挟んで、前記第1配線導体とは反対側の他方の面に形成され、かつ前記車両のアースに接続される第2配線導体と、
前記絶縁層内に形成され、かつ一方の面が前記第1配線導体と対向され、さらに他方の面が前記第2配線導体と対向するように配置される中間導体と、
前記第1配線導体と前記中間導体との間に発生する寄生容量と並列に接続され、かつ前記第2配線導体と前記中間導体との間に発生する寄生容量と直列に接続されることにより、当該寄生容量と並列共振器を構成するためのインダクタと、
を備える電力変換装置。 - 請求項11または12に記載のいずれかの電力変換装置であって、
絶縁材を介して前記回路基板を搭載し、かつ前記インバータ回路を構成する半導体素子を冷却するための冷却媒体に当該半導体素子の発生熱を伝達する金属ベースを備え、前記金属ベースは、前記第2配線導体と前記金属筐体と接続される電力変換装置。
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JP2015012742A (ja) * | 2013-07-01 | 2015-01-19 | 株式会社日立製作所 | 電力変換装置 |
JP2015223010A (ja) * | 2014-05-22 | 2015-12-10 | 株式会社明電舎 | 半導体装置 |
JP2016082745A (ja) * | 2014-10-17 | 2016-05-16 | 日産自動車株式会社 | 電源装置 |
US9444390B2 (en) | 2014-06-10 | 2016-09-13 | Hyundai Motor Company | Apparatus and method for reducing common mode voltage |
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JP2020088991A (ja) * | 2018-11-20 | 2020-06-04 | 株式会社Soken | モータ駆動装置 |
WO2022185533A1 (ja) * | 2021-03-05 | 2022-09-09 | 三菱電機株式会社 | インバータ装置 |
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JP6447391B2 (ja) * | 2015-06-30 | 2019-01-09 | オムロン株式会社 | 電力変換装置 |
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