JP2011159874A - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
- Publication number
- JP2011159874A JP2011159874A JP2010021478A JP2010021478A JP2011159874A JP 2011159874 A JP2011159874 A JP 2011159874A JP 2010021478 A JP2010021478 A JP 2010021478A JP 2010021478 A JP2010021478 A JP 2010021478A JP 2011159874 A JP2011159874 A JP 2011159874A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor element
- wavelength conversion
- sheet
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 238000006243 chemical reaction Methods 0.000 claims abstract description 82
- 229920005989 resin Polymers 0.000 claims abstract description 80
- 239000011347 resin Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims description 92
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000000748 compression moulding Methods 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- -1 siloxane skeleton Chemical group 0.000 description 10
- 238000001723 curing Methods 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 238000011417 postcuring Methods 0.000 description 3
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000006459 hydrosilylation reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- BYJQAPYDPPKJGH-UHFFFAOYSA-N 3-(2-carboxyethyl)-1h-indole-2-carboxylic acid Chemical compound C1=CC=C2C(CCC(=O)O)=C(C(O)=O)NC2=C1 BYJQAPYDPPKJGH-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920006310 Asahi-Kasei Polymers 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920004482 WACKER® Polymers 0.000 description 1
- 238000013006 addition curing Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
【解決手段】光半導体素子3を埋設可能な封止樹脂層1及び光波長変換粒子を含有する波長変換層2が直接又は間接的に積層されてなる光半導体素子封止用シートを用いて、封止樹脂層1が光半導体素子搭載基板4に対向するよう載置して加圧成形してなる光半導体装置であって、光半導体素子3を埋設した成形体の上部には波長変換層2が存在するが、側面には存在しない構造とする。
【選択図】図1
Description
〔1〕 光半導体素子を埋設可能な封止樹脂層及び光波長変換粒子を含有する波長変換層が直接又は間接的に積層されてなる光半導体素子封止用シートを用いて、該封止樹脂層が光半導体素子搭載基板に対向するよう載置して加圧成形してなる光半導体装置であって、光半導体素子を埋設した成形体の上部には該波長変換層が存在するが、側面には存在しない構造であることを特徴とする光半導体装置、
〔2〕 前記〔1〕記載の光半導体装置に用いられる、光半導体素子封止用シート、ならびに
〔3〕 光半導体素子を埋設可能な封止樹脂層及び光波長変換粒子を含有する波長変換層が直接又は間接的に積層されてなる光半導体素子封止用シートを、該封止樹脂層が光半導体素子搭載基板に対向するよう載置して平坦な面で加圧成形する、前記〔1〕記載の光半導体装置の製造方法
に関する。
0.5≦X≦2.0 (I)
を満足する。また、より好ましくは
0.8≦X≦1.5
を満足する。なお、得られたシートは、複数枚積層して熱プレスすることにより、上記範囲の厚みを有する1枚のシートとして成形することもできる。
{X×tan(75°)}2×π+A≦Y≦{X×tan(80°)}2×π+A (II)
ここで、Aは、光半導体素子の上部(上面)の面積をいい、{X×tan(75°)}2×πは、光束0〜75度(°)の光が通過する円の面積を、{X×tan(80°)}2×πは、光束0〜80度(°)の光が通過する円の面積を意味する。シートの形は、前記面積を有するものであれば、特に限定されない。
各樹脂層を複数枚貼りあわせることで約1mmの厚さのシートを成形し、動的粘弾性測定装置(DMS-200、エスアイアイ・ナノテクノロジー社製)にて、せん断時の粘弾性測定を行い、23℃及び150℃の貯蔵弾性率を求める。
シリコーンエラストマー(旭化成ワッカー社製、商品名「LR7556」)溶液に、黄色蛍光体(YAG)を粒子濃度20重量%となるように添加し1時間攪拌した。得られた溶液を、ポリエステルフィルム(三菱ポリエステル化学社製、MRN-38、38μm)上に0.10mmの厚さに塗工し、120℃で5分乾燥することにより、波長変換層を得た(厚さ0.10mm)。
封止樹脂層溶液の塗工厚さを1.0mmから0.5mmに変更する以外は、製造例1と同様にして光半導体素子封止用シートBを得た(厚さ0.60mm)。
封止樹脂層溶液の塗工厚さを1.0mmから0.8mmに変更する以外は、製造例1と同様にして光半導体素子封止用シートCを得た(厚さ0.90mm)。
シリコーンエラストマー(LR7556)溶液に、黄色蛍光体(YAG)を粒子濃度20重量%となるように添加し1時間攪拌した。得られた溶液を、ポリプロピレンフィルム(東セロ社製、Y-3s、30μm)上に0.10mmの厚さに塗工して、120℃で5分乾燥することにより波長変換層(厚さ0.10mm)を調製した。得られた波長変換層を用いる以外は製造例1と同様にして光半導体素子封止用シートDを得た(厚さ1.10mm)。
表1に示す種類の光半導体素子封止用シートをトムソン刃を用いて表1に示すサイズに打ち抜いたものを、光半導体素子上に、封止樹脂層が光半導体素子搭載基板に対向するよう載置して、加温プレス機(新東工業社製、CYTP-10)を用いて平板金型で、表1に示す高さとなるよう150℃で3分間プレスして、実施例1〜9の光半導体装置を得た。また、比較例1の光半導体装置は、プレスの際に、凹型金型(8mm×8mm)を用いる以外は、実施例1と同様にして調製した。なお、基板としては、2cm×3cmのメタル基板の中央に青色LED素子(1mm×1mm)が実装されているものを用いた。
光半導体装置に50mAの電流を流して、各角度の放射光を分光光度計(大塚電子社製、MCPD-3000)を用いて検知し、色度をCIE色度指標(x、y)で表わした。0°(正面)から80°までの放射光のうち、CIE色度(y)値について、最大値と最小値の差を色度差として算出し、以下の評価基準に従って、色度角度依存性を評価した。なお、色度差が小さいほど、色度角度依存性が小さいことを示す。
○:色度差が0.030未満
△:色度差が0.030以上、0.060未満
×:色度差が0.060以上
光半導体装置を銅製のヒートシンクに装着後、1Aの電流を流して、装置表面の温度をサーモグラフィック装置(CINO社製、CPA1000)を用いて測定し、波長変換特性を評価した。なお、パッケージの表面温度が120℃を超えると、蛍光体の波長変換効率が低下するため、波長変換特性が劣ることを示す。
2 波長変換層
3 光半導体素子
4 基板
Claims (4)
- 光半導体素子を埋設可能な封止樹脂層及び光波長変換粒子を含有する波長変換層が直接又は間接的に積層されてなる光半導体素子封止用シートを用いて、該封止樹脂層が光半導体素子搭載基板に対向するよう載置して加圧成形してなる光半導体装置であって、光半導体素子を埋設した成形体の上部には該波長変換層が存在するが、側面には存在しない構造であることを特徴とする光半導体装置。
- 封止樹脂層の厚みを(X)(mm)、光半導体素子1個あたりを封止するに要する光半導体素子封止用シートの面積を(Y)(mm2)、光半導体素子の上部の面積を(A)(mm2)とした際に、下記式(I)及び(II)を満足してなる、請求項1記載の光半導体装置。
0.5≦X≦2 (I)
{X×tan(75°)}2×π+A≦Y≦{X×tan(80°)}2×π+A (II) - 請求項1又は2記載の光半導体装置に用いられる、光半導体素子封止用シート。
- 光半導体素子を埋設可能な封止樹脂層及び光波長変換粒子を含有する波長変換層が直接又は間接的に積層されてなる光半導体素子封止用シートを、該封止樹脂層が光半導体素子搭載基板に対向するよう載置して平坦な面で加圧成形する、請求項1又は2記載の光半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010021478A JP5340191B2 (ja) | 2010-02-02 | 2010-02-02 | 光半導体装置 |
US13/017,063 US9190584B2 (en) | 2010-02-02 | 2011-01-31 | Optical-semiconductor device |
EP20110152880 EP2355195A3 (en) | 2010-02-02 | 2011-02-01 | Semiconductor light-emitting device, its encapsulation sheet and method for producing said device |
KR1020110010145A KR20110090822A (ko) | 2010-02-02 | 2011-02-01 | 광반도체 장치 |
CN201110035808.XA CN102163683B (zh) | 2010-02-02 | 2011-02-01 | 光学半导体装置 |
US14/068,590 US20140057374A1 (en) | 2010-02-02 | 2013-10-31 | Optical-semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010021478A JP5340191B2 (ja) | 2010-02-02 | 2010-02-02 | 光半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012271182A Division JP2013065884A (ja) | 2012-12-12 | 2012-12-12 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011159874A true JP2011159874A (ja) | 2011-08-18 |
JP5340191B2 JP5340191B2 (ja) | 2013-11-13 |
Family
ID=43798340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010021478A Expired - Fee Related JP5340191B2 (ja) | 2010-02-02 | 2010-02-02 | 光半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9190584B2 (ja) |
EP (1) | EP2355195A3 (ja) |
JP (1) | JP5340191B2 (ja) |
KR (1) | KR20110090822A (ja) |
CN (1) | CN102163683B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013051234A (ja) * | 2011-08-30 | 2013-03-14 | Nitto Denko Corp | 発光ダイオード装置の製造方法 |
EP2600428A2 (en) | 2011-11-30 | 2013-06-05 | Nitto Denko Corporation | Element-connecting board, producing method thereof, and light emitting diode device |
JP5373215B1 (ja) * | 2013-03-28 | 2013-12-18 | 日東電工株式会社 | システム、製造条件決定装置および製造管理装置 |
JP2013258209A (ja) * | 2012-06-11 | 2013-12-26 | Nitto Denko Corp | 封止シート、発光ダイオード装置およびその製造方法 |
JP2014086549A (ja) * | 2012-10-23 | 2014-05-12 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
CN103855289A (zh) * | 2012-11-28 | 2014-06-11 | 日东电工株式会社 | 封装片、光半导体装置及其制造方法 |
WO2014148286A1 (ja) | 2013-03-22 | 2014-09-25 | 日東電工株式会社 | 光半導体装置の製造方法 |
JP2020074490A (ja) * | 2014-05-21 | 2020-05-14 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5287935B2 (ja) | 2011-06-16 | 2013-09-11 | 東レ株式会社 | 蛍光体含有シート、それを用いたled発光装置およびその製造方法 |
JP5827834B2 (ja) * | 2011-07-22 | 2015-12-02 | 日東電工株式会社 | シリコーン樹脂組成物、シリコーン樹脂シート、シリコーン樹脂シートの製造方法および光半導体装置 |
JP6129154B2 (ja) | 2012-02-24 | 2017-05-17 | 三井化学株式会社 | 光デバイス面封止用組成物、光デバイス面封止用シート、ディスプレイ、およびディスプレイの製造方法 |
CN103855270A (zh) * | 2012-12-07 | 2014-06-11 | 展晶科技(深圳)有限公司 | 发光装置及其制造方法 |
CN103959488B (zh) * | 2013-03-28 | 2015-09-30 | 日东电工株式会社 | 系统、制造条件决定装置以及制造管理装置 |
CN105637660B (zh) * | 2013-11-07 | 2018-11-09 | 东丽株式会社 | 层叠体及使用所述层叠体的发光装置的制造方法 |
US9911907B2 (en) | 2014-07-28 | 2018-03-06 | Epistar Corporation | Light-emitting apparatus |
US11217735B2 (en) * | 2015-02-20 | 2022-01-04 | Luminus, Inc. | LED package with surface textures and methods of formation |
JP6637674B2 (ja) * | 2015-04-30 | 2020-01-29 | 信越化学工業株式会社 | プリント配線板、プリント配線板の製造方法、及び半導体装置 |
CN112543551B (zh) * | 2020-11-27 | 2022-04-15 | 信丰迅捷兴电路科技有限公司 | 一种COB Mini/Micro LED印制电路板△E色差管控的加工工艺 |
CN114347395B (zh) * | 2022-03-17 | 2022-06-03 | 威海嘉瑞光电科技股份有限公司 | 半导体光学器件的封装方法及其使用的装置 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02237141A (ja) * | 1989-03-10 | 1990-09-19 | Sharp Corp | 半導体装置 |
JPH06207105A (ja) * | 1992-11-23 | 1994-07-26 | Dow Corning Corp | ワンパッケージのオルガノシロキサン組成物 |
JPH08209068A (ja) * | 1994-12-06 | 1996-08-13 | Dow Corning Ltd | 硬化可能なコーティング組成物 |
JP2004343149A (ja) * | 2004-08-31 | 2004-12-02 | Sharp Corp | 発光素子および発光素子の製造方法 |
JP2006117919A (ja) * | 2004-09-24 | 2006-05-11 | Nagase & Co Ltd | 半導体封止用3次元シート状接着体 |
JP2006140362A (ja) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法 |
JP2006206919A (ja) * | 2002-04-26 | 2006-08-10 | Kaneka Corp | 硬化性組成物、硬化物およびその製造方法 |
JP2007287937A (ja) * | 2006-04-17 | 2007-11-01 | Kyocera Chemical Corp | 樹脂封止型半導体装置及びその製造方法 |
JP2008528788A (ja) * | 2005-02-01 | 2008-07-31 | ダウ・コーニング・コーポレイション | 硬化性被覆組成物 |
JP2009099784A (ja) * | 2007-10-17 | 2009-05-07 | Nitto Denko Corp | 光半導体装置の製造方法 |
JP2009524235A (ja) * | 2006-01-17 | 2009-06-25 | ルシメア カンパニー リミテッド | シート状系抗体、その製造方法、及びそれを用いた発光装置 |
JP2009253223A (ja) * | 2008-04-10 | 2009-10-29 | Nitto Denko Corp | 光半導体素子封止用シート |
JP2010285593A (ja) * | 2008-12-12 | 2010-12-24 | Nitto Denko Corp | 熱硬化性シリコーン樹脂用組成物 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6803422B2 (en) * | 1999-09-13 | 2004-10-12 | Denki Kagaku Kogyo Kabushiki Kaisha | Cross-copolymerized olefin/aromatic vinyl compound/diene copolymer and process for its production |
CN100338141C (zh) * | 2002-04-26 | 2007-09-19 | 株式会社钟化 | 硬化性组合物、硬化物及其制造方法以及由此硬化物密封的发光二极管 |
JP4383768B2 (ja) * | 2003-04-23 | 2009-12-16 | スリーエム イノベイティブ プロパティズ カンパニー | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
JP4803339B2 (ja) * | 2003-11-20 | 2011-10-26 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及び発光半導体装置 |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
DE102005009066A1 (de) * | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optischen und eines strahlungsemittierenden Bauelementes und optisches sowie strahlungsemittierendes Bauelement |
US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
JP2008159705A (ja) | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
US7868341B2 (en) * | 2007-06-27 | 2011-01-11 | The Regents Of The University Of California | Optical designs for high-efficacy white-light emitting diodes |
JP5286585B2 (ja) | 2007-10-05 | 2013-09-11 | シャープ株式会社 | 発光装置 |
JP2009141066A (ja) | 2007-12-05 | 2009-06-25 | Nitto Denko Corp | 光半導体装置の製造方法 |
JP5136963B2 (ja) * | 2008-03-24 | 2013-02-06 | 信越化学工業株式会社 | 硬化性シリコーンゴム組成物及び半導体装置 |
JP5163330B2 (ja) | 2008-07-14 | 2013-03-13 | 株式会社村田製作所 | 薄膜積層体の加工方法 |
EP2196503B1 (en) * | 2008-12-12 | 2015-02-18 | Nitto Denko Corporation | Thermosetting silicone resin composition, silicone resin, silicone resin sheet and use thereof |
KR101253586B1 (ko) * | 2010-08-25 | 2013-04-11 | 삼성전자주식회사 | 형광체 필름, 이의 제조방법, 형광층 도포 방법, 발광소자 패키지의 제조방법 및 발광소자 패키지 |
JP5827864B2 (ja) * | 2011-06-14 | 2015-12-02 | 日東電工株式会社 | 封止用シートおよび光半導体素子装置 |
JP2014127575A (ja) * | 2012-12-26 | 2014-07-07 | Nitto Denko Corp | 封止シート |
-
2010
- 2010-02-02 JP JP2010021478A patent/JP5340191B2/ja not_active Expired - Fee Related
-
2011
- 2011-01-31 US US13/017,063 patent/US9190584B2/en not_active Expired - Fee Related
- 2011-02-01 KR KR1020110010145A patent/KR20110090822A/ko not_active Application Discontinuation
- 2011-02-01 EP EP20110152880 patent/EP2355195A3/en not_active Withdrawn
- 2011-02-01 CN CN201110035808.XA patent/CN102163683B/zh not_active Expired - Fee Related
-
2013
- 2013-10-31 US US14/068,590 patent/US20140057374A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02237141A (ja) * | 1989-03-10 | 1990-09-19 | Sharp Corp | 半導体装置 |
JPH06207105A (ja) * | 1992-11-23 | 1994-07-26 | Dow Corning Corp | ワンパッケージのオルガノシロキサン組成物 |
JPH08209068A (ja) * | 1994-12-06 | 1996-08-13 | Dow Corning Ltd | 硬化可能なコーティング組成物 |
JP2006206919A (ja) * | 2002-04-26 | 2006-08-10 | Kaneka Corp | 硬化性組成物、硬化物およびその製造方法 |
JP2004343149A (ja) * | 2004-08-31 | 2004-12-02 | Sharp Corp | 発光素子および発光素子の製造方法 |
JP2006117919A (ja) * | 2004-09-24 | 2006-05-11 | Nagase & Co Ltd | 半導体封止用3次元シート状接着体 |
JP2006140362A (ja) * | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法 |
JP2008528788A (ja) * | 2005-02-01 | 2008-07-31 | ダウ・コーニング・コーポレイション | 硬化性被覆組成物 |
JP2009524235A (ja) * | 2006-01-17 | 2009-06-25 | ルシメア カンパニー リミテッド | シート状系抗体、その製造方法、及びそれを用いた発光装置 |
JP2007287937A (ja) * | 2006-04-17 | 2007-11-01 | Kyocera Chemical Corp | 樹脂封止型半導体装置及びその製造方法 |
JP2009099784A (ja) * | 2007-10-17 | 2009-05-07 | Nitto Denko Corp | 光半導体装置の製造方法 |
JP2009253223A (ja) * | 2008-04-10 | 2009-10-29 | Nitto Denko Corp | 光半導体素子封止用シート |
JP2010285593A (ja) * | 2008-12-12 | 2010-12-24 | Nitto Denko Corp | 熱硬化性シリコーン樹脂用組成物 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013051234A (ja) * | 2011-08-30 | 2013-03-14 | Nitto Denko Corp | 発光ダイオード装置の製造方法 |
EP2600428A2 (en) | 2011-11-30 | 2013-06-05 | Nitto Denko Corporation | Element-connecting board, producing method thereof, and light emitting diode device |
JP2013115310A (ja) * | 2011-11-30 | 2013-06-10 | Nitto Denko Corp | 素子接続用基板、その製造方法および発光ダイオード装置 |
US8872211B2 (en) | 2011-11-30 | 2014-10-28 | Nitto Denko Corporation | Element-connecting board, producing method thereof, and light-emitting diode device |
US8975101B2 (en) | 2011-11-30 | 2015-03-10 | Nitto Denko Corporation | Element connecting board, producing method thereof, and light emitting diode device |
JP2013258209A (ja) * | 2012-06-11 | 2013-12-26 | Nitto Denko Corp | 封止シート、発光ダイオード装置およびその製造方法 |
JP2014086549A (ja) * | 2012-10-23 | 2014-05-12 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
CN103855289A (zh) * | 2012-11-28 | 2014-06-11 | 日东电工株式会社 | 封装片、光半导体装置及其制造方法 |
WO2014148286A1 (ja) | 2013-03-22 | 2014-09-25 | 日東電工株式会社 | 光半導体装置の製造方法 |
JP5373215B1 (ja) * | 2013-03-28 | 2013-12-18 | 日東電工株式会社 | システム、製造条件決定装置および製造管理装置 |
WO2014155863A1 (ja) * | 2013-03-28 | 2014-10-02 | 日東電工株式会社 | システム、製造条件決定装置および製造管理装置 |
JP2020074490A (ja) * | 2014-05-21 | 2020-05-14 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110186893A1 (en) | 2011-08-04 |
JP5340191B2 (ja) | 2013-11-13 |
CN102163683B (zh) | 2015-09-16 |
US20140057374A1 (en) | 2014-02-27 |
EP2355195A3 (en) | 2014-07-23 |
CN102163683A (zh) | 2011-08-24 |
US9190584B2 (en) | 2015-11-17 |
EP2355195A2 (en) | 2011-08-10 |
KR20110090822A (ko) | 2011-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5340191B2 (ja) | 光半導体装置 | |
JP5107886B2 (ja) | 光半導体装置の製造方法 | |
JP5190993B2 (ja) | 光半導体封止用シート | |
JP5744386B2 (ja) | 光半導体封止材 | |
JP5424843B2 (ja) | 熱硬化性シリコーン樹脂用組成物 | |
TWI508335B (zh) | 光學半導體裝置 | |
TWI657599B (zh) | 螢光體組成物、螢光體片、螢光體片積層體及使用它們的led晶片、led封裝及其製造方法 | |
TWI686963B (zh) | 積層體、發光裝置及其製造方法、閃光燈以及移動終端 | |
JP5366587B2 (ja) | 光半導体封止用加工シート | |
CN101847683B (zh) | 用于光半导体封装的片 | |
JP2013526078A5 (ja) | ||
JP2011258634A (ja) | 光半導体用封止シート | |
TW201712902A (zh) | 發光裝置的製造方法以及顯示裝置的製造方法 | |
JP2013004923A (ja) | 半導体発光装置用後付リフレクタ、半導体発光装置用樹脂パッケージ及び半導体発光装置 | |
JPWO2014014008A1 (ja) | 封止層被覆半導体素子および半導体装置の製造方法 | |
TW201543724A (zh) | 片式白光發光二極體、製備片式白光發光二極體的方法及封裝膠材 | |
TW201518088A (zh) | 積層體及使用其的發光裝置的製造方法 | |
JP5738541B2 (ja) | 光半導体装置 | |
CN103456726B (zh) | Led封装、led显示器及制造led封装的方法 | |
JP2011082339A (ja) | 光半導体封止用キット | |
JP2013065884A (ja) | 光半導体装置 | |
JP2011222852A (ja) | 光半導体装置 | |
TWI814986B (zh) | 晶圓級光半導體裝置用樹脂組成物,及使用該組成物之晶圓級光半導體裝置 | |
JP5730559B2 (ja) | 光半導体装置 | |
JP5450358B2 (ja) | 封止成型方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120117 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20120117 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20120213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120228 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120608 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120802 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121012 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130806 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |