JP2011159652A - 光電変換素子の製造方法および光電変換素子 - Google Patents

光電変換素子の製造方法および光電変換素子 Download PDF

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Publication number
JP2011159652A
JP2011159652A JP2010017658A JP2010017658A JP2011159652A JP 2011159652 A JP2011159652 A JP 2011159652A JP 2010017658 A JP2010017658 A JP 2010017658A JP 2010017658 A JP2010017658 A JP 2010017658A JP 2011159652 A JP2011159652 A JP 2011159652A
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Japan
Prior art keywords
photoelectric conversion
layer
conversion element
substrate
buffer layer
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Abandoned
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JP2010017658A
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English (en)
Japanese (ja)
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JP2011159652A5 (https=
Inventor
Tetsuo Kono
哲夫 河野
Michiji Koike
理士 小池
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Fujifilm Corp
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Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2010017658A priority Critical patent/JP2011159652A/ja
Priority to US13/011,196 priority patent/US20110186955A1/en
Publication of JP2011159652A publication Critical patent/JP2011159652A/ja
Publication of JP2011159652A5 publication Critical patent/JP2011159652A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2010017658A 2010-01-29 2010-01-29 光電変換素子の製造方法および光電変換素子 Abandoned JP2011159652A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010017658A JP2011159652A (ja) 2010-01-29 2010-01-29 光電変換素子の製造方法および光電変換素子
US13/011,196 US20110186955A1 (en) 2010-01-29 2011-01-21 Method of producing photoelectric conversion device and photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010017658A JP2011159652A (ja) 2010-01-29 2010-01-29 光電変換素子の製造方法および光電変換素子

Publications (2)

Publication Number Publication Date
JP2011159652A true JP2011159652A (ja) 2011-08-18
JP2011159652A5 JP2011159652A5 (https=) 2012-08-16

Family

ID=44340873

Family Applications (1)

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JP2010017658A Abandoned JP2011159652A (ja) 2010-01-29 2010-01-29 光電変換素子の製造方法および光電変換素子

Country Status (2)

Country Link
US (1) US20110186955A1 (https=)
JP (1) JP2011159652A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9224903B2 (en) * 2012-04-17 2015-12-29 Kyocera Corporation Method for manufacturing photoelectric converter
WO2014002646A1 (ja) * 2012-06-29 2014-01-03 京セラ株式会社 光電変換装置の製造方法
KR20140135904A (ko) * 2013-05-16 2014-11-27 삼성에스디아이 주식회사 박막 태양전지를 형성하는 제조방법, 박막 태양전지를 형성하는 제조장치, 및 상기 제조방법에 의해 형성된 버퍼층을 포함하는 박막 태양전지

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645248A (ja) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd カルコパイライト構造半導体薄膜の製造方法、薄膜太陽電池及び発光装置
JPH114009A (ja) * 1997-06-12 1999-01-06 Yamaha Corp 太陽電池の製造方法
JPH11340489A (ja) * 1998-03-24 1999-12-10 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法ならびにこれを用いた太陽電池
JP2000174306A (ja) * 1998-12-01 2000-06-23 Asahi Chem Ind Co Ltd 化合物半導体薄膜の製造方法
JP2000232230A (ja) * 1998-12-10 2000-08-22 Shinko Electric Ind Co Ltd 太陽電池の製造方法
JP2003124487A (ja) * 2001-10-18 2003-04-25 Matsushita Electric Ind Co Ltd 太陽電池の製造装置
JP2009099973A (ja) * 2007-09-28 2009-05-07 Fujifilm Corp 太陽電池
JP2009267336A (ja) * 2007-09-28 2009-11-12 Fujifilm Corp 太陽電池用基板および太陽電池

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
US8609182B2 (en) * 2008-03-05 2013-12-17 Global Solar Energy, Inc. Solution containment during buffer layer deposition
JPWO2009110092A1 (ja) * 2008-03-07 2011-07-14 昭和シェル石油株式会社 Ｃｉｓ系太陽電池の積層構造、及び集積構造
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
WO2010141863A2 (en) * 2009-06-04 2010-12-09 The Regents Of The University Of California Solution-processed inorganic photo-voltaic devices and methods of production

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645248A (ja) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd カルコパイライト構造半導体薄膜の製造方法、薄膜太陽電池及び発光装置
JPH114009A (ja) * 1997-06-12 1999-01-06 Yamaha Corp 太陽電池の製造方法
JPH11340489A (ja) * 1998-03-24 1999-12-10 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法ならびにこれを用いた太陽電池
JP2000174306A (ja) * 1998-12-01 2000-06-23 Asahi Chem Ind Co Ltd 化合物半導体薄膜の製造方法
JP2000232230A (ja) * 1998-12-10 2000-08-22 Shinko Electric Ind Co Ltd 太陽電池の製造方法
JP2003124487A (ja) * 2001-10-18 2003-04-25 Matsushita Electric Ind Co Ltd 太陽電池の製造装置
JP2009099973A (ja) * 2007-09-28 2009-05-07 Fujifilm Corp 太陽電池
JP2009267336A (ja) * 2007-09-28 2009-11-12 Fujifilm Corp 太陽電池用基板および太陽電池

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