JP2011136890A - 絶縁被覆用無鉛低融点ガラスペースト - Google Patents
絶縁被覆用無鉛低融点ガラスペースト Download PDFInfo
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- JP2011136890A JP2011136890A JP2009299017A JP2009299017A JP2011136890A JP 2011136890 A JP2011136890 A JP 2011136890A JP 2009299017 A JP2009299017 A JP 2009299017A JP 2009299017 A JP2009299017 A JP 2009299017A JP 2011136890 A JP2011136890 A JP 2011136890A
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- 239000011521 glass Substances 0.000 title claims abstract description 100
- 239000011248 coating agent Substances 0.000 title claims abstract description 35
- 238000000576 coating method Methods 0.000 title claims abstract description 35
- 238000009413 insulation Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000012776 electronic material Substances 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims description 27
- 230000008018 melting Effects 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 13
- 239000003566 sealing material Substances 0.000 abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 239000008151 electrolyte solution Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 235000014692 zinc oxide Nutrition 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052740 iodine Inorganic materials 0.000 description 5
- 239000011630 iodine Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000002165 photosensitisation Effects 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/087—Chemical composition of glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
【解決手段】質量%でSiO2を0〜7、B2O3を10〜20、ZnOを7〜30、Bi2O3を35〜80含有するガラスフリットが、有機成分を必須成分とするガラスペースト中に95〜50質量%含有されることを特徴とする絶縁被覆用無鉛低融点ガラスペースト。
【選択図】 なし
Description
SiO2源として微粉珪砂を、B2O3源としてほう酸を、ZnO源として亜鉛華を、Bi2O3源として酸化ビスマスを、Al2O3源として酸化アルミニウムを、Li2O源として炭酸リチウムを、Na2O源として炭酸ナトリウムを、K2O源として炭酸カリウムを、ZrO2源として酸化ジルコニウムを、BaO源として炭酸バリウムを、CaO源として炭酸カルシウムを、SrO源として炭酸ストロンチウムを使用した。これらを所望の低融点ガラス組成となるべく調合したうえで、白金ルツボに投入し、電気加熱炉内で1000〜1300℃、1〜2時間で加熱溶融して表1の実施例1〜6、表2の比較例1〜5に示す組成のガラスを得た。
上記作製したサンプルをヨウ素電解液としてI2、LiIを溶解させたアセトニトリル溶液に浸漬させ85℃の高温環境下に100時間保持した。この時、銀電極の腐食を目視にて確認し、腐食の無いものを○、腐食のあるものを×とした。
絶縁被覆用無鉛低融点ガラスペーストおよび、各種試験結果を表に示す。
Claims (7)
- 質量%でSiO2を0〜7、B2O3を10〜20、ZnOを7〜30、Bi2O3を35〜80含有するガラスフリットが、有機成分を必須成分とするガラスペースト中に95〜50質量%含有されることを特徴とする絶縁被覆用無鉛低融点ガラスペースト。
- ガラスフリットが質量%で、SiO2を0〜7、B2O3を10〜20、ZnOを7〜30、Bi2O3を35〜80、BaOを0〜10、R2O(Li2O、Na2O、K2Oから選択される一種以上の和)を0〜10、RO(MgO、CaO、SrOから選択される一種以上の和)を0〜10、Al2O3を0〜8含むことを特徴とする請求項1に記載の絶縁被覆用無鉛低融点ガラスペースト。
- ガラスフリットの30℃〜300℃における熱膨張係数が(65〜95)×10−7/℃、軟化点が450℃以上550℃以下であることを特徴とする請求項1または2に記載の絶縁被覆用無鉛低融点ガラスペースト。
- 請求項1乃至3のいずれかに記載のガラスペーストにセラミックス粉末のフィラーを含有させることを特徴とする絶縁被覆用無鉛低融点ガラスペースト。
- ガラスフリットが70〜99質量%でセラミックス粉末のフィラーが1〜30質量%であることを特徴とする請求項4に記載の絶縁被覆用無鉛低融点ガラスペースト。
- 請求項1乃至5のいずれかの絶縁被覆用無鉛低融点ガラスペーストを使用することを特徴とする色素増感太陽電池。
- 請求項1乃至5のいずれかの絶縁被覆用無鉛低融点ガラスペーストを使用することを特徴とする電子材料用基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009299017A JP5685813B2 (ja) | 2009-12-29 | 2009-12-29 | 絶縁被覆用無鉛低融点ガラスペースト |
KR1020127013375A KR20120085302A (ko) | 2009-12-29 | 2010-12-16 | 절연피복용 무연 저융점 유리 페이스트 |
PCT/JP2010/072613 WO2011081022A1 (ja) | 2009-12-29 | 2010-12-16 | 絶縁被覆用無鉛低融点ガラスペースト |
TW099146166A TWI460142B (zh) | 2009-12-29 | 2010-12-27 | Insulated with lead - free low - melting glass paste |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009299017A JP5685813B2 (ja) | 2009-12-29 | 2009-12-29 | 絶縁被覆用無鉛低融点ガラスペースト |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011136890A true JP2011136890A (ja) | 2011-07-14 |
JP5685813B2 JP5685813B2 (ja) | 2015-03-18 |
Family
ID=44226434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009299017A Expired - Fee Related JP5685813B2 (ja) | 2009-12-29 | 2009-12-29 | 絶縁被覆用無鉛低融点ガラスペースト |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5685813B2 (ja) |
KR (1) | KR20120085302A (ja) |
TW (1) | TWI460142B (ja) |
WO (1) | WO2011081022A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012108290A1 (ja) * | 2011-02-10 | 2012-08-16 | セントラル硝子株式会社 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
WO2013172007A1 (ja) * | 2012-05-16 | 2013-11-21 | 株式会社豊田自動織機 | 非水電解質二次電池正極用集電体、その製造方法、非水電解質二次電池用正極及び非水電解質二次電池 |
JP2015519276A (ja) * | 2012-03-30 | 2015-07-09 | コーニング インコーポレイテッド | Led蛍光体用のビスマスホウ酸塩ガラス封着剤 |
WO2015194290A1 (ja) * | 2014-06-19 | 2015-12-23 | 株式会社村田製作所 | 導電性ペースト、及びガラス物品 |
JP2017222543A (ja) * | 2016-06-16 | 2017-12-21 | 旭硝子株式会社 | ガラス粉末、導電ペーストおよび太陽電池 |
KR20190005606A (ko) * | 2017-07-07 | 2019-01-16 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
KR20190028892A (ko) * | 2017-09-11 | 2019-03-20 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
US20190376359A1 (en) * | 2018-06-10 | 2019-12-12 | Pa&E, Hermetic Solutions Group, Llc | Hydrophobic dielectric sealing materials |
CN111187006A (zh) * | 2020-02-22 | 2020-05-22 | 刘世伟 | 一种高温烧结打印墨水专用低熔点粉及其制备方法 |
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CN102568866A (zh) * | 2011-12-23 | 2012-07-11 | 彩虹集团公司 | 一种低玻粉封装染料敏化太阳能电池的方法 |
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JP2009046380A (ja) * | 2007-07-20 | 2009-03-05 | Nippon Electric Glass Co Ltd | 封着用ガラス組成物 |
JP2009120462A (ja) * | 2007-11-19 | 2009-06-04 | Asahi Glass Co Ltd | 色素増感型太陽電池製造用無鉛ガラスおよびガラスセラミックス組成物 |
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JP2009046380A (ja) * | 2007-07-20 | 2009-03-05 | Nippon Electric Glass Co Ltd | 封着用ガラス組成物 |
JP2009120462A (ja) * | 2007-11-19 | 2009-06-04 | Asahi Glass Co Ltd | 色素増感型太陽電池製造用無鉛ガラスおよびガラスセラミックス組成物 |
Cited By (12)
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WO2012108290A1 (ja) * | 2011-02-10 | 2012-08-16 | セントラル硝子株式会社 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
JP2015519276A (ja) * | 2012-03-30 | 2015-07-09 | コーニング インコーポレイテッド | Led蛍光体用のビスマスホウ酸塩ガラス封着剤 |
WO2013172007A1 (ja) * | 2012-05-16 | 2013-11-21 | 株式会社豊田自動織機 | 非水電解質二次電池正極用集電体、その製造方法、非水電解質二次電池用正極及び非水電解質二次電池 |
WO2015194290A1 (ja) * | 2014-06-19 | 2015-12-23 | 株式会社村田製作所 | 導電性ペースト、及びガラス物品 |
JPWO2015194290A1 (ja) * | 2014-06-19 | 2017-04-20 | 株式会社村田製作所 | 導電性ペースト、及びガラス物品 |
JP2017222543A (ja) * | 2016-06-16 | 2017-12-21 | 旭硝子株式会社 | ガラス粉末、導電ペーストおよび太陽電池 |
KR20190005606A (ko) * | 2017-07-07 | 2019-01-16 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
KR102367363B1 (ko) * | 2017-07-07 | 2022-02-24 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
KR20190028892A (ko) * | 2017-09-11 | 2019-03-20 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
KR102431078B1 (ko) * | 2017-09-11 | 2022-08-11 | 엘지전자 주식회사 | 태양 전지 패널 및 이의 제조 방법 |
US20190376359A1 (en) * | 2018-06-10 | 2019-12-12 | Pa&E, Hermetic Solutions Group, Llc | Hydrophobic dielectric sealing materials |
CN111187006A (zh) * | 2020-02-22 | 2020-05-22 | 刘世伟 | 一种高温烧结打印墨水专用低熔点粉及其制备方法 |
Also Published As
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TWI460142B (zh) | 2014-11-11 |
TW201139316A (en) | 2011-11-16 |
JP5685813B2 (ja) | 2015-03-18 |
WO2011081022A1 (ja) | 2011-07-07 |
KR20120085302A (ko) | 2012-07-31 |
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