JP2021160951A - 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 - Google Patents
半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Download PDFInfo
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- JP2021160951A JP2021160951A JP2020061749A JP2020061749A JP2021160951A JP 2021160951 A JP2021160951 A JP 2021160951A JP 2020061749 A JP2020061749 A JP 2020061749A JP 2020061749 A JP2020061749 A JP 2020061749A JP 2021160951 A JP2021160951 A JP 2021160951A
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- glass
- semiconductor element
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- Granted
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- 239000011521 glass Substances 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000000576 coating method Methods 0.000 title claims abstract description 44
- 239000011248 coating agent Substances 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims description 10
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims description 36
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000010306 acid treatment Methods 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 239000000383 hazardous chemical Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- -1 that is Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052844 willemite Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/20—Glass-ceramics matrix
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】本発明の半導体素子被覆用ガラスは、ガラス組成として、ZnO+SiO2 40〜65%、B2O3 7〜25%、Al2O3 5〜15%、MgO 8〜22%を含有し、実質的に鉛成分を含有しないことを特徴とする。
【選択図】なし
Description
Claims (6)
- ガラス組成として、モル%で、ZnO+SiO2 40〜65%、B2O3 7〜25%、A
2O3 5〜15%、MgO 8〜22%を含有し、実質的に鉛成分を含有しないことを特徴とする半導体素子被覆用ガラス。 - モル比SiO2/ZnOが、0.5〜2.0であることを特徴とする請求項1に記載の半導体素子被覆用ガラス。
- モル比Al2O3/(ZnO+SiO2)が、0.08〜0.30であることを特徴とする請求項1又は2に記載の半導体素子被覆用ガラス。
- 30〜300℃の温度範囲における熱膨張係数が20〜55×10−7/℃であることを特徴とする請求項1〜3の何れかに記載の半導体素子被覆用ガラス。
- 請求項1〜3の何れかに記載の半導体素子被覆用ガラスからなるガラス粉末 75〜100質量%、セラミック粉末 0〜25質量%を含有することを特徴とする半導体素子被覆用材料。
- 30〜300℃の温度範囲における熱膨張係数が20〜55×10−7/℃であることを特徴とする請求項5に記載の半導体素子被覆用材料。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020061749A JP7491020B2 (ja) | 2020-03-31 | 2020-03-31 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
PCT/JP2021/002642 WO2021199625A1 (ja) | 2020-03-31 | 2021-01-26 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
US17/912,971 US20230365454A1 (en) | 2020-03-31 | 2021-01-26 | Semiconductor element coating glass and semiconductor element coating material using same |
CN202180013428.8A CN115066404B (zh) | 2020-03-31 | 2021-01-26 | 半导体元件被覆用玻璃以及使用其的半导体被覆用材料 |
TW110103389A TW202138322A (zh) | 2020-03-31 | 2021-01-29 | 半導體元件被覆用玻璃及使用此的半導體被覆用材料 |
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JP2020061749A JP7491020B2 (ja) | 2020-03-31 | 2020-03-31 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Publications (2)
Publication Number | Publication Date |
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JP2021160951A true JP2021160951A (ja) | 2021-10-11 |
JP7491020B2 JP7491020B2 (ja) | 2024-05-28 |
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JP2020061749A Active JP7491020B2 (ja) | 2020-03-31 | 2020-03-31 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Country Status (5)
Country | Link |
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US (1) | US20230365454A1 (ja) |
JP (1) | JP7491020B2 (ja) |
CN (1) | CN115066404B (ja) |
TW (1) | TW202138322A (ja) |
WO (1) | WO2021199625A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115831444A (zh) * | 2022-12-28 | 2023-03-21 | 广东南海启明光大科技有限公司 | 一种低热膨胀系数的介质浆料及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011079718A (ja) * | 2009-10-09 | 2011-04-21 | Nippon Electric Glass Co Ltd | ビスマス系非鉛ガラス及び複合材料 |
JP5685813B2 (ja) * | 2009-12-29 | 2015-03-18 | セントラル硝子株式会社 | 絶縁被覆用無鉛低融点ガラスペースト |
WO2014038230A1 (ja) | 2012-09-10 | 2014-03-13 | 日本碍子株式会社 | ガラス-セラミックス複合材料 |
CN107533976B (zh) | 2014-10-31 | 2020-12-22 | 新电元工业株式会社 | 半导体装置的制造方法以及抗蚀玻璃 |
JP6693360B2 (ja) * | 2016-09-14 | 2020-05-13 | Agc株式会社 | 光変換部材、照明光源および光変換部材の製造方法 |
CN110395904B (zh) * | 2018-04-25 | 2020-12-22 | 成都光明光电股份有限公司 | 玻璃组合物 |
CN108341594A (zh) * | 2018-04-27 | 2018-07-31 | 海南中航特玻科技有限公司 | 一种光电倍增管用高硼硅酸盐玻璃材料 |
-
2020
- 2020-03-31 JP JP2020061749A patent/JP7491020B2/ja active Active
-
2021
- 2021-01-26 CN CN202180013428.8A patent/CN115066404B/zh active Active
- 2021-01-26 WO PCT/JP2021/002642 patent/WO2021199625A1/ja active Application Filing
- 2021-01-26 US US17/912,971 patent/US20230365454A1/en active Pending
- 2021-01-29 TW TW110103389A patent/TW202138322A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20230365454A1 (en) | 2023-11-16 |
CN115066404B (zh) | 2024-02-23 |
JP7491020B2 (ja) | 2024-05-28 |
CN115066404A (zh) | 2022-09-16 |
WO2021199625A1 (ja) | 2021-10-07 |
TW202138322A (zh) | 2021-10-16 |
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