TWI422547B - A conductive paste and a solar cell element using the conductive paste - Google Patents
A conductive paste and a solar cell element using the conductive paste Download PDFInfo
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- TWI422547B TWI422547B TW101100208A TW101100208A TWI422547B TW I422547 B TWI422547 B TW I422547B TW 101100208 A TW101100208 A TW 101100208A TW 101100208 A TW101100208 A TW 101100208A TW I422547 B TWI422547 B TW I422547B
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- conductive paste
- glass
- solar cell
- layer
- cell element
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- 239000011521 glass Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000012776 electronic material Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 19
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
本發明係關於一種可用作形成於矽半導體太陽電池中之電極的不含鉛之導電性膏。
作為使用半導體矽基板之電子零件，已知有圖1所示之太陽電池元件。如圖1所示，太陽電池元件係於厚度為200 μm左右之p型半導體矽基板1之受光面側形成n型半導體矽層2，且於受光面側表面形成有用以提昇受光效率之氮化矽膜等防反射膜3，進而於該防反射膜3上形成有與半導體連接之表面電極4。
又，於p型半導體矽基板1之背側均勻地形成有鋁電極層5。該鋁電極層5一般而言藉由使用網版印刷等塗佈鋁膏材料，且於600~900℃左右之溫度下短時間煅燒而形成，上述鋁膏材料矽含有包含鋁粉末、玻璃料、乙基纖維素或丙烯酸系樹脂等黏合劑之有機媒劑。
於該鋁膏材料之煅燒中，藉由鋁擴散至p型半導體矽基板1，而於鋁電極層5與p型半導體矽基板1之間，形成稱作BSF(Back Surface Field，背面電場)層6之Si-Al共晶層，進而形成鋁擴散之雜質層p+
層7。該p+
層7係發揮抑制因pn接面之光電動勢效應而生成之載子之復合造成之損失之效果，從而有助於太陽電池元件之轉換效率提昇。關於該BSF效果，揭示有例如專利文獻1或專利文獻2等所揭示，作為包含於鋁膏材料中之玻璃料，可藉由使用含鉛之玻璃而獲得較高之效果。
專利文獻1：日本專利特開2007-59380號公報
專利文獻2：日本專利特開2003-165744號公報
一般而言，p+
層之表面電阻與BSF效果存在相關性，p+
層之表面電阻越低BSF效果越高，且作為太陽電池元件之轉換效率越高。
上述含鉛成分之玻璃料可藉由使用於如鋁膏材料之導電性膏中而獲得較高之BSF效果，進而於使上述導電性膏成為低熔點之方面為重要之成分，但對人體或環境會造成較大危害。上述專利文獻1及專利文獻2存在於導電性膏中包含鉛成分之問題。
因此，本發明之目的在於獲得一種可用作形成於矽半導體太陽電池之電極之不含鉛之導電性膏。
本發明之導電性膏之特徵在於：其係使用半導體矽基板之太陽電池用導電性膏，且該導電性膏中所含之玻璃料之組成實質上不含鉛成分，且以質量%計包含5~15之SiO2
、20~40之B2
O3
、0~10之Al2
O3
、30~45之ZnO、5~30之RO(選自由MgO、CaO、SrO、及BaO所組成之群中之至少1種之合計)、及0.1~6之R2
O(選自由Li2
O、Na2
O、及K2
O所組成之群中之至少1種之合計)。
於利用使用含鉛玻璃料之導電性膏情形時，由於p+
層之表面電阻呈現20~30 Ω/□左右，故使用本發明之導電性膏時之p+
層之表面電阻較佳為30 Ω/□下。該表面電阻越低，則用作太陽電池元件之情形時，轉換效率越高。
於本發明中，可藉由使玻璃料中含有之R2
O量增加，而使p+
層之表面電阻變為低於30 Ω/□值，但於包含超過6質量%之該R2
O情形時，由於存在因該R2
O之鹼性成分變多而呈現潮解性之情形，故於本發明中使該R2
O為6質量%以下。
又，本發明之上述玻璃料之特徵在於：30℃~300℃下之熱膨脹係數為(55~85)×10-7
/℃，且軟化點為550℃以上650℃以下。又，於本發明中，上述熱膨脹係數係指線性膨脹係數。
可藉由本發明，而獲得包含不含鉛之玻璃料之導電性膏。可藉由將本發明之導電性膏用作太陽電池元件，而獲得較高之BSF效果。又，可獲得與半導體矽基板良好之密接性。進而，由於實質上不包含鉛成分，故不會對人體或環境造成危害。
本發明之導電性膏係不僅包含含有鋁粉末與乙基纖維素或丙烯酸系樹脂等黏合劑之有機媒劑，而且包含玻璃料，且該玻璃料實質上不含鉛成分，且以質量%計包含5~15之SiO2
、20~40之B2
O3
、0~10之Al2
O3
、30~45之ZnO、5~30之RO(選自由MgO、CaO、SrO、及BaO所組成之群中之至少1種之合計)、及0.1~6之R2
O(選自由Li2
O、Na2
O、及K2
O所組成之群中之至少1種之合計)。
於本發明之玻璃料中，SiO2
為玻璃形成成分，且可藉由使其與作為其他之玻璃形成成分之B2
O3
共存而形成穩定之玻璃，並使其含有5~15%(質量%，以下亦相同)。若超過15%，則玻璃之軟化點上升，難以用作導電性膏。更佳為7~13%之範圍。
B2
O3
係玻璃形成成分，且使玻璃熔融變得容易，抑制玻璃之熱膨脹係數之過度上升，且於煅燒時對玻璃賦予流動性，使玻璃之介電係數降低，且使其於玻璃中含有20~40%。若未達20%，則會因玻璃之流動性變得不充分而損及燒結性，另一方面若超過40%，則玻璃之穩定性下降。又，更佳為25~35%之範圍。
Al2
O3
係抑制玻璃結晶化之成分。使其於玻璃中含有0~10%，但若超過10%，則會導致玻璃之軟化點上升，難以用作導電性膏。
ZnO係使玻璃之軟化點降低之成分，且使其於玻璃中含有30~45%。若未達30%則無法發揮上述作用，若超過45%則玻璃變得不穩定，易產生結晶。又，更佳為35~42%之範圍。
RO(選自由MgO、CaO、SrO、及BaO所組成之群中之至少1種之合計)係使玻璃之軟化點降低者，且使其於玻璃中含有5~30%。若未達5%則玻璃之軟化點之下降變得不充分，使燒結性受損。另一方面，若超過30%則存在玻璃之熱膨脹係數變得過高之情形。更佳為10~27%之範圍內。
R2
O(選自由Li2
O、Na2
O、及K2
O所組成之群中之至少1種之合計)係使玻璃之軟化點降低，將熱膨脹係數調整於適當範圍者，並使其包含於0.1~6%之範圍內。若未達0.1%則玻璃之軟化點之下降變得不充分，使燒結性受損。另一方面，若超過6%則存在導致熱膨脹係數過度地上升之情形。更佳為2~6%之範圍。再者，較佳為至少包含K2
O作為R2
O。
其他亦可添加由普通之氧化物表示之CuO、TiO2
、In2
O3
、Bi2
O3
、SnO2
、及TeO2
等。
可藉由實質上不含鉛(以下亦存在記載為PbO之情形)，而消除對人體或環境造成之影響。此處，所謂實質上不包含PbO係指PbO作為雜質混入至玻璃原料中之程度的量。例如，若為低熔點玻璃中之0.3%以下之範圍，則上述之危害、即對人體、環境之影響、以及對絕緣特性等造成之影響幾乎不存在，從而實質上不會受到PbO之影響。
可藉由使用上述玻璃料，而獲得30℃~300℃下之熱膨脹係數為(55~80)×10-7
/℃且軟化點為550℃以上650℃以下之導電性膏。若熱膨脹係數偏離(55~85)×10-7
/℃，則於電極形成時會產生剝離、基板之翹曲等問題。較佳為(60~75)×10-7
/℃之範圍。又，若軟化點超過650℃，則煅燒時未充分地流動，故而會產生與半導體矽基板之密接性變差等問題。較佳為上述軟化點為580℃以上630℃以下。
本發明之導電性膏可以上述方式用於太陽電池元件。又，進而該導電性膏可以低溫煅燒，故亦可用作使用銀或鋁等之配線圖案之形成材料或各種電極等電子材料用基板。
以下，基於實施例進行說明。
(導電性膏)
首先，玻璃料末係以達到實施例中記載之特定組成之方式，將各種無機原料秤量後進行混合，製作原料配料。將該原料配料投入至鉑坩堝，於電加熱爐內以1000~1300℃加熱熔融1~2小時，獲得表1之實施例1~5、表2之比較例1~4所示組成之玻璃。使玻璃之一部分流入模具中，成為塊狀，供熱物性(熱膨脹係數、軟化點)測定用。利用驟冷雙輥成形機，使剩餘之玻璃成為薄片狀，並使用粉碎裝置，整粒為平均粒徑1~4 μm、最大粒徑未達10 μm之粉末狀。
再者，上述軟化點係使用熱分析裝置TG-DTA(Rigaku股份有限公司製造)進行測定。又，上述熱膨脹係數係使用熱膨脹計，根據以5℃/分鐘進行升溫時30~300℃下之伸長量求出線性膨脹係數。
繼而，以特定比例將作為黏合劑之乙基纖維素與上述玻璃粉、又作為導電性粉末之鋁粉末混合於包含α松脂醇與丁基卡必醇醋酸酯之膏油中，製備黏度為500±50泊左右之導電性膏。
其次，準備p型半導體矽基板1，且對其上部網版印刷上述製作之導電性膏。使該等試驗片於140℃之烘箱內乾燥10分鐘，繼而，使用電爐於800℃條件下進行1分鐘煅燒，獲得於p型半導體矽基板1上形成有鋁電極層5與BSF層6之構造。
繼之，為分析鋁電極層5之與p型半導體矽基板1之密接性，而將背膠牽條(NICHIBAN公司製造)黏貼於鋁電極層5，以目視觀察評價剝離時鋁電極層5之剝落狀態。
其後，將形成有鋁電極層5之p型半導體矽基板1浸漬於氫氧化鈉水溶液中，藉由蝕刻鋁電極層5及BSF層6而使p+
層7露出於表面，利用4探針式表面電阻測定器測定p+
層7之表面電阻。
(結果)
無鉛低熔點玻璃組成及各試驗結果示於表中。
再者，於表1及2之接著強度之欄中，A表示接著強度良好，B表示接著強度尚且良好，C表示接著強度不充分。
如表1中之實施例1~5所示，於本發明之組成範圍內，軟化點為550℃~650℃，且具有較佳之熱膨脹係數(55~85)×10-7
/℃，與p型半導體矽基板1之密接性亦良好。進而，與太陽電池元件之轉換效率相關之p+
層7之電阻值亦達到26 Ω/□下，可用作矽半導體太陽電池用導電性膏。
另一方面，偏離本發明之組成範圍之表2中之比較例1~4無法獲得與p型半導體矽基板1良好之密接性，且p+
層7之電阻值高，或者溶解後玻璃呈現潮解性等，而無法應用作矽半導體太陽電池用導電性膏。
1．．．p型半導體矽基板
2．．．n型半導體矽層
3．．．防反射膜
4．．．表面電極
5．．．鋁電極層
6．．．BSF層
7．．．p+
層
圖1係普通之矽半導體太陽電池組電池之概略剖面圖。
1．．．p型半導體矽基板
2．．．n型半導體矽層
3．．．防反射膜
4．．．表面電極
5．．．鋁電極層
6．．．BSF層
7．．．p+
層
Claims (4)
- 一種導電性膏，其特徵在於：其係使用半導體矽基板之太陽電池用導電性膏，且該導電性膏中所含之玻璃料之組成實質上不包含鉛成分，且以質量%計包含：5~15之SiO2 、20~40之B2 O3 、0~10之Al2 O3 、30~45之ZnO、5~30之RO(選自由MgO、CaO、SrO、及BaO所組成之群中之至少1種之合計)、及0.1~6之R2 O(選自由Li2 O、Na2 O、及K2 O所組成之群中之至少1種之合計)。
- 如請求項1之導電性膏，其中上述玻璃料係30℃~300℃下之熱膨脹係數為(55~85)×10-7 /℃，且軟化點為550℃以上650℃以下。
- 一種太陽電池元件，其特徵在於使用如請求項1或2之導電性膏。
- 一種電子材料用基板，其特徵在於使用如請求項1或2之導電性膏。
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| CN107673601B (zh) * | 2017-08-28 | 2019-10-18 | 广州市儒兴科技开发有限公司 | 一种perc铝浆用玻璃粉及其制备方法 |
| CN110550864B (zh) * | 2019-09-29 | 2022-09-02 | 长沙新材料产业研究院有限公司 | 一种低膨胀系数绝缘介质浆料及其制备方法 |
| CN115895332B (zh) * | 2022-12-29 | 2024-02-02 | 湖南松井新材料股份有限公司 | 一种爽滑性低黑度玻璃高温油墨及其制备方法和应用 |
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| TWI230699B (en) * | 2002-04-24 | 2005-04-11 | Central Glass Co Ltd | Lead-free low-melting glass |
| CN101395723A (zh) * | 2006-03-07 | 2009-03-25 | 株式会社村田制作所 | 导电性糊及太阳电池 |
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| JP3978712B2 (ja) * | 2001-02-28 | 2007-09-19 | 日本電気硝子株式会社 | プラズマディスプレイパネル用隔壁形成材料 |
| CN100524834C (zh) * | 2005-06-07 | 2009-08-05 | E.I.内穆尔杜邦公司 | 铝厚膜组合物、电极、半导体器件及其制造方法 |
| JP2007070196A (ja) | 2005-09-09 | 2007-03-22 | Central Glass Co Ltd | 無鉛低融点ガラス |
| WO2009054199A1 (ja) | 2007-10-24 | 2009-04-30 | Nippon Electric Glass Co., Ltd. | プラズマディスプレイパネル用誘電体材料 |
| JP5414409B2 (ja) * | 2009-01-16 | 2014-02-12 | 日立粉末冶金株式会社 | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
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| TWI230699B (en) * | 2002-04-24 | 2005-04-11 | Central Glass Co Ltd | Lead-free low-melting glass |
| CN101395723A (zh) * | 2006-03-07 | 2009-03-25 | 株式会社村田制作所 | 导电性糊及太阳电池 |
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| TW201231430A (en) | 2012-08-01 |
| KR101474677B1 (ko) | 2014-12-18 |
| JP5910509B2 (ja) | 2016-04-27 |
| CN103298759A (zh) | 2013-09-11 |
| CN103298759B (zh) | 2016-05-11 |
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