JP5910509B2 - 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 - Google Patents

導電性ペースト及び該導電性ペーストを用いた太陽電池素子 Download PDF

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Publication number
JP5910509B2
JP5910509B2 JP2012552658A JP2012552658A JP5910509B2 JP 5910509 B2 JP5910509 B2 JP 5910509B2 JP 2012552658 A JP2012552658 A JP 2012552658A JP 2012552658 A JP2012552658 A JP 2012552658A JP 5910509 B2 JP5910509 B2 JP 5910509B2
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Japan
Prior art keywords
conductive paste
glass
solar cell
layer
semiconductor silicon
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Expired - Fee Related
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JP2012552658A
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English (en)
Japanese (ja)
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JPWO2012096128A1 (ja
Inventor
耕治 富永
耕治 富永
潤 濱田
潤 濱田
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Central Glass Co Ltd
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Central Glass Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
JP2012552658A 2011-01-13 2011-12-27 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 Expired - Fee Related JP5910509B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011004738 2011-01-13
JP2011004738 2011-01-13
PCT/JP2011/080156 WO2012096128A1 (ja) 2011-01-13 2011-12-27 導電性ペースト及び該導電性ペーストを用いた太陽電池素子

Publications (2)

Publication Number Publication Date
JPWO2012096128A1 JPWO2012096128A1 (ja) 2014-06-09
JP5910509B2 true JP5910509B2 (ja) 2016-04-27

Family

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JP2012552658A Expired - Fee Related JP5910509B2 (ja) 2011-01-13 2011-12-27 導電性ペースト及び該導電性ペーストを用いた太陽電池素子

Country Status (5)

Country Link
JP (1) JP5910509B2 (zh)
KR (1) KR101474677B1 (zh)
CN (1) CN103298759B (zh)
TW (1) TWI422547B (zh)
WO (1) WO2012096128A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6825948B2 (ja) * 2017-03-17 2021-02-03 東洋アルミニウム株式会社 太陽電池用ペースト組成物
CN107673601B (zh) * 2017-08-28 2019-10-18 广州市儒兴科技开发有限公司 一种perc铝浆用玻璃粉及其制备方法
CN110550864B (zh) * 2019-09-29 2022-09-02 长沙新材料产业研究院有限公司 一种低膨胀系数绝缘介质浆料及其制备方法
CN115895332B (zh) * 2022-12-29 2024-02-02 湖南松井新材料股份有限公司 一种爽滑性低黑度玻璃高温油墨及其制备方法和应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001163635A (ja) * 1999-12-06 2001-06-19 Asahi Glass Co Ltd 隔壁形成用無鉛低融点ガラスおよびガラスセラミックス組成物
JP2002326839A (ja) * 2001-02-28 2002-11-12 Nippon Electric Glass Co Ltd プラズマディスプレイパネル用隔壁形成材料及びガラス組成物
JP2007070196A (ja) * 2005-09-09 2007-03-22 Central Glass Co Ltd 無鉛低融点ガラス
JP2009120472A (ja) * 2007-10-24 2009-06-04 Nippon Electric Glass Co Ltd プラズマディスプレイパネル用誘電体材料
JP2010184852A (ja) * 2009-01-16 2010-08-26 Hitachi Powdered Metals Co Ltd 低融点ガラス組成物、それを用いた低温封着材料及び電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60318517T2 (de) * 2002-04-24 2009-07-23 Central Glass Co., Ltd., Ube Bleifreies niedrigschmelzendes Glas
CN100524834C (zh) * 2005-06-07 2009-08-05 E.I.内穆尔杜邦公司 铝厚膜组合物、电极、半导体器件及其制造方法
CN101395723A (zh) * 2006-03-07 2009-03-25 株式会社村田制作所 导电性糊及太阳电池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001163635A (ja) * 1999-12-06 2001-06-19 Asahi Glass Co Ltd 隔壁形成用無鉛低融点ガラスおよびガラスセラミックス組成物
JP2002326839A (ja) * 2001-02-28 2002-11-12 Nippon Electric Glass Co Ltd プラズマディスプレイパネル用隔壁形成材料及びガラス組成物
JP2007070196A (ja) * 2005-09-09 2007-03-22 Central Glass Co Ltd 無鉛低融点ガラス
JP2009120472A (ja) * 2007-10-24 2009-06-04 Nippon Electric Glass Co Ltd プラズマディスプレイパネル用誘電体材料
JP2010184852A (ja) * 2009-01-16 2010-08-26 Hitachi Powdered Metals Co Ltd 低融点ガラス組成物、それを用いた低温封着材料及び電子部品

Also Published As

Publication number Publication date
TW201231430A (en) 2012-08-01
CN103298759A (zh) 2013-09-11
CN103298759B (zh) 2016-05-11
KR20130100369A (ko) 2013-09-10
KR101474677B1 (ko) 2014-12-18
TWI422547B (zh) 2014-01-11
WO2012096128A1 (ja) 2012-07-19
JPWO2012096128A1 (ja) 2014-06-09

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