JP2011123993A5 - - Google Patents

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Publication number
JP2011123993A5
JP2011123993A5 JP2011021208A JP2011021208A JP2011123993A5 JP 2011123993 A5 JP2011123993 A5 JP 2011123993A5 JP 2011021208 A JP2011021208 A JP 2011021208A JP 2011021208 A JP2011021208 A JP 2011021208A JP 2011123993 A5 JP2011123993 A5 JP 2011123993A5
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JP
Japan
Prior art keywords
memory cell
voltage
logic level
memory device
data storage
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Application number
JP2011021208A
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English (en)
Japanese (ja)
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JP2011123993A (ja
JP5075992B2 (ja
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Priority to JP2011021208A priority Critical patent/JP5075992B2/ja
Priority claimed from JP2011021208A external-priority patent/JP5075992B2/ja
Publication of JP2011123993A publication Critical patent/JP2011123993A/ja
Publication of JP2011123993A5 publication Critical patent/JP2011123993A5/ja
Application granted granted Critical
Publication of JP5075992B2 publication Critical patent/JP5075992B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2011021208A 2011-02-02 2011-02-02 半導体記憶装置 Expired - Fee Related JP5075992B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011021208A JP5075992B2 (ja) 2011-02-02 2011-02-02 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011021208A JP5075992B2 (ja) 2011-02-02 2011-02-02 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004359029A Division JP4786171B2 (ja) 2004-12-10 2004-12-10 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2011123993A JP2011123993A (ja) 2011-06-23
JP2011123993A5 true JP2011123993A5 (enExample) 2012-04-05
JP5075992B2 JP5075992B2 (ja) 2012-11-21

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ID=44287708

Family Applications (1)

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JP2011021208A Expired - Fee Related JP5075992B2 (ja) 2011-02-02 2011-02-02 半導体記憶装置

Country Status (1)

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JP (1) JP5075992B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190142B2 (en) 2014-03-12 2015-11-17 Kabushiki Kaisha Toshiba Semiconductor memory device and method of controlling the same
JP6313252B2 (ja) * 2015-03-16 2018-04-18 東芝メモリ株式会社 半導体メモリ装置
JP2017054562A (ja) * 2015-09-08 2017-03-16 株式会社東芝 半導体記憶装置
JP2020047354A (ja) 2018-09-20 2020-03-26 キオクシア株式会社 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3180669B2 (ja) * 1996-06-03 2001-06-25 日本電気株式会社 不揮発性半導体メモリおよびその書き込み方法
JP3906545B2 (ja) * 1998-02-03 2007-04-18 ソニー株式会社 不揮発性半導体記憶装置
JP3637211B2 (ja) * 1998-08-31 2005-04-13 株式会社東芝 半導体記憶装置
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
JP4270832B2 (ja) * 2002-09-26 2009-06-03 株式会社東芝 不揮発性半導体メモリ

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