JP2011121153A - 研摩材 - Google Patents
研摩材 Download PDFInfo
- Publication number
- JP2011121153A JP2011121153A JP2009282084A JP2009282084A JP2011121153A JP 2011121153 A JP2011121153 A JP 2011121153A JP 2009282084 A JP2009282084 A JP 2009282084A JP 2009282084 A JP2009282084 A JP 2009282084A JP 2011121153 A JP2011121153 A JP 2011121153A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- manganese dioxide
- polishing
- particle
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000002245 particle Substances 0.000 claims abstract description 85
- 230000001186 cumulative effect Effects 0.000 claims abstract description 9
- 238000000790 scattering method Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 28
- 238000010298 pulverizing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000003082 abrasive agent Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000009837 dry grinding Methods 0.000 claims 1
- 238000000227 grinding Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 15
- 230000000052 comparative effect Effects 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 14
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 8
- 239000011164 primary particle Substances 0.000 description 8
- 238000004438 BET method Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007561 laser diffraction method Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】走査電子顕微鏡により観察された粒子の縦軸と横軸との比が3.0以下である非針状形態を有する二酸化マンガン粒子からなることを特徴とする研摩材である。その観察された粒子の縦軸の平均粒径DSEMが1.0μm以下が好ましく、また、レーザ回折・散乱法粒子径分布測定の体積基準の積算分率における50%径D50が2.0μm以下が好ましい。
【選択図】なし
Description
Claims (10)
- 走査電子顕微鏡により観察された粒子の縦軸と横軸との比が3.0以下である非針状形態を有する二酸化マンガン粒子からなることを特徴とする研摩材。
- 観察された粒子の縦軸の平均粒径DSEMが1.0μm以下である請求項1記載の研摩材。
- レーザ回折・散乱法粒子径分布測定の体積基準の積算分率における50%径D50が2.0μm以下である請求項1または請求項2に記載の研摩材。
- 比表面積が20m2/g以上である請求項1〜請求項3いずれかに記載の研摩材。
- 二酸化マンガンの結晶構造がγ型である請求項1〜請求項4いずれかに記載の研摩材。
- 二酸化マンガンの結晶構造がβ型である請求項1〜請求項4いずれかに記載の研摩材。
- 請求項1〜請求項6いずれかに記載の研摩材を含有する研摩材スラリー。
- 請求項5に記載の研摩材の製造方法であって、
電解反応により陽極表面に析出させたγ型二酸化マンガンを乾式にて粉砕する乾式粉砕工程を備える研摩材の製造方法。 - 請求項6に記載の研摩材の製造方法であって、
電解反応により陽極表面に析出させたγ型二酸化マンガンを、200℃〜600℃の熱雰囲気において加熱する加熱工程と、加熱処理した二酸化マンガンを乾式にて粉砕する乾式粉砕工程とを備える研摩材の製造方法。 - 請求項8または請求項9に記載の研摩材の製造方法により得られた研摩材を用いる研摩材スラリーの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009282084A JP4940289B2 (ja) | 2009-12-11 | 2009-12-11 | 研摩材 |
PCT/JP2010/067080 WO2011070839A1 (ja) | 2009-12-11 | 2010-09-30 | 研摩材 |
EP10835761.7A EP2511046B1 (en) | 2009-12-11 | 2010-09-30 | Abrasive material |
US13/513,917 US20120240478A1 (en) | 2009-12-11 | 2010-09-30 | Abrasive material |
TW099137733A TWI429736B (zh) | 2009-12-11 | 2010-11-03 | 研磨材料 |
US15/410,942 US10323162B2 (en) | 2009-12-11 | 2017-01-20 | Abrasive material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009282084A JP4940289B2 (ja) | 2009-12-11 | 2009-12-11 | 研摩材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011121153A true JP2011121153A (ja) | 2011-06-23 |
JP4940289B2 JP4940289B2 (ja) | 2012-05-30 |
Family
ID=44145392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009282084A Active JP4940289B2 (ja) | 2009-12-11 | 2009-12-11 | 研摩材 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120240478A1 (ja) |
EP (1) | EP2511046B1 (ja) |
JP (1) | JP4940289B2 (ja) |
TW (1) | TWI429736B (ja) |
WO (1) | WO2011070839A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013054883A1 (ja) | 2011-10-13 | 2013-04-18 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
US8702826B2 (en) | 2012-06-14 | 2014-04-22 | Fujitsu Limited | Abrasive agent, method for producing abrasive agents, and electronic device |
WO2015049942A1 (ja) * | 2013-10-03 | 2015-04-09 | 三井金属鉱業株式会社 | 研摩材、その製造方法及びそれを含む研摩スラリー |
KR20170081191A (ko) | 2014-11-07 | 2017-07-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마 방법 및 폴리싱용 조성물 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0320387A (ja) * | 1989-06-16 | 1991-01-29 | Sumitomo Electric Ind Ltd | 精密研磨用複合ダイヤモンド砥粒の製造方法 |
JP2000349052A (ja) * | 1999-06-04 | 2000-12-15 | Seimi Chem Co Ltd | Mn2O3粒子を含有する半導体用研磨剤 |
JP2001035818A (ja) * | 1999-07-16 | 2001-02-09 | Seimi Chem Co Ltd | 半導体用研磨剤 |
JP2002261051A (ja) * | 2001-03-01 | 2002-09-13 | Tosoh Corp | 研磨用スラリー及びこれを用いた研磨方法 |
JP2006121111A (ja) * | 1999-11-16 | 2006-05-11 | Denso Corp | メカノケミカル研磨装置 |
JP2007129249A (ja) * | 1997-12-18 | 2007-05-24 | Hitachi Chem Co Ltd | 研磨剤及びスラリー |
WO2007069488A1 (ja) * | 2005-12-16 | 2007-06-21 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
JP2009110767A (ja) * | 2007-10-29 | 2009-05-21 | Nissan Motor Co Ltd | 高出力リチウムイオン電池用正極電極 |
JP2009238891A (ja) * | 2008-03-26 | 2009-10-15 | Hitachi Metals Ltd | SiC単結晶基板の製造方法 |
JP2009263176A (ja) * | 2008-04-25 | 2009-11-12 | Kanto Denka Kogyo Co Ltd | マグネシウムアルミニウム複合酸化物表面被覆スピネル型マンガン酸リチウム及びその製造方法、並びにそれを使用する正極活物質及び非水電解質電池 |
Family Cites Families (8)
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JPS605215A (ja) * | 1983-06-22 | 1985-01-11 | Mitsui Mining & Smelting Co Ltd | 浄水用濾材 |
JP3138548B2 (ja) * | 1992-09-11 | 2001-02-26 | 日本重化学工業株式会社 | 吸着剤用活性化二酸化マンガンおよびその製造方法 |
JP3375192B2 (ja) | 1994-03-03 | 2003-02-10 | 三井金属鉱業株式会社 | マンガン乾電池 |
JP3529902B2 (ja) | 1995-07-04 | 2004-05-24 | 富士通株式会社 | 半導体装置の製造方法 |
JP3778386B2 (ja) | 1996-06-11 | 2006-05-24 | 富士通株式会社 | Mn酸化物を砥粒とする研磨剤の製造方法および半導体装置の製造方法 |
JP3998813B2 (ja) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2008210746A (ja) | 2007-02-28 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 二酸化マンガンおよびそれを用いた電池 |
JP2009093947A (ja) * | 2007-10-10 | 2009-04-30 | Panasonic Corp | 球状の電解二酸化マンガンおよびこれを用いたアルカリ一次電池 |
-
2009
- 2009-12-11 JP JP2009282084A patent/JP4940289B2/ja active Active
-
2010
- 2010-09-30 US US13/513,917 patent/US20120240478A1/en not_active Abandoned
- 2010-09-30 EP EP10835761.7A patent/EP2511046B1/en active Active
- 2010-09-30 WO PCT/JP2010/067080 patent/WO2011070839A1/ja active Application Filing
- 2010-11-03 TW TW099137733A patent/TWI429736B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0320387A (ja) * | 1989-06-16 | 1991-01-29 | Sumitomo Electric Ind Ltd | 精密研磨用複合ダイヤモンド砥粒の製造方法 |
JP2007129249A (ja) * | 1997-12-18 | 2007-05-24 | Hitachi Chem Co Ltd | 研磨剤及びスラリー |
JP2000349052A (ja) * | 1999-06-04 | 2000-12-15 | Seimi Chem Co Ltd | Mn2O3粒子を含有する半導体用研磨剤 |
JP2001035818A (ja) * | 1999-07-16 | 2001-02-09 | Seimi Chem Co Ltd | 半導体用研磨剤 |
JP2006121111A (ja) * | 1999-11-16 | 2006-05-11 | Denso Corp | メカノケミカル研磨装置 |
JP2002261051A (ja) * | 2001-03-01 | 2002-09-13 | Tosoh Corp | 研磨用スラリー及びこれを用いた研磨方法 |
WO2007069488A1 (ja) * | 2005-12-16 | 2007-06-21 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
JP2009110767A (ja) * | 2007-10-29 | 2009-05-21 | Nissan Motor Co Ltd | 高出力リチウムイオン電池用正極電極 |
JP2009238891A (ja) * | 2008-03-26 | 2009-10-15 | Hitachi Metals Ltd | SiC単結晶基板の製造方法 |
JP2009263176A (ja) * | 2008-04-25 | 2009-11-12 | Kanto Denka Kogyo Co Ltd | マグネシウムアルミニウム複合酸化物表面被覆スピネル型マンガン酸リチウム及びその製造方法、並びにそれを使用する正極活物質及び非水電解質電池 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9318339B2 (en) | 2011-10-13 | 2016-04-19 | Mitsui Mining & Smelting, Ltd | Polishing slurry and polishing method |
JP2017071787A (ja) * | 2011-10-13 | 2017-04-13 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
WO2013054883A1 (ja) | 2011-10-13 | 2013-04-18 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
US8702826B2 (en) | 2012-06-14 | 2014-04-22 | Fujitsu Limited | Abrasive agent, method for producing abrasive agents, and electronic device |
US9873824B2 (en) | 2013-10-03 | 2018-01-23 | Mitsui Mining & Smelting Co., Ltd. | Abrasive material, method for producing same, and abrasive slurry containing same |
WO2015049942A1 (ja) * | 2013-10-03 | 2015-04-09 | 三井金属鉱業株式会社 | 研摩材、その製造方法及びそれを含む研摩スラリー |
JP2015071715A (ja) * | 2013-10-03 | 2015-04-16 | 三井金属鉱業株式会社 | 研摩材、その製造方法及びそれを含む研摩スラリー |
KR20170081191A (ko) | 2014-11-07 | 2017-07-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마 방법 및 폴리싱용 조성물 |
EP3263277A2 (en) | 2014-11-07 | 2018-01-03 | Fujimi Incorporated | Polishing method and polishing composition |
US10227517B2 (en) | 2014-11-07 | 2019-03-12 | Fujimi Incorporated | Polishing method and polishing composition |
US10759981B2 (en) | 2014-11-07 | 2020-09-01 | Fujimi Incorporated | Polishing method and polishing composition |
EP3792000A1 (en) | 2014-11-07 | 2021-03-17 | Fujimi Incorporated | Polishing method and polishing composition |
EP3800229A1 (en) | 2014-11-07 | 2021-04-07 | Fujimi Incorporated | Polishing composition |
US11015098B2 (en) | 2014-11-07 | 2021-05-25 | Fujimi Incorporated | Polishing composition |
EP4163057A1 (en) | 2014-11-07 | 2023-04-12 | Fujimi Incorporated | Polishing method and polishing composition |
Also Published As
Publication number | Publication date |
---|---|
JP4940289B2 (ja) | 2012-05-30 |
EP2511046A1 (en) | 2012-10-17 |
TWI429736B (zh) | 2014-03-11 |
US20120240478A1 (en) | 2012-09-27 |
TW201125961A (en) | 2011-08-01 |
EP2511046A4 (en) | 2017-05-10 |
EP2511046B1 (en) | 2019-01-16 |
WO2011070839A1 (ja) | 2011-06-16 |
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