JP2011117014A - クリーニングガス - Google Patents
クリーニングガス Download PDFInfo
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- JP2011117014A JP2011117014A JP2009273030A JP2009273030A JP2011117014A JP 2011117014 A JP2011117014 A JP 2011117014A JP 2009273030 A JP2009273030 A JP 2009273030A JP 2009273030 A JP2009273030 A JP 2009273030A JP 2011117014 A JP2011117014 A JP 2011117014A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 62
- 229910002091 carbon monoxide Inorganic materials 0.000 claims abstract description 19
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 5
- 229910052734 helium Inorganic materials 0.000 claims abstract description 5
- 229910052743 krypton Inorganic materials 0.000 claims abstract description 5
- 229910052754 neon Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 46
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ketene group Chemical group C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- YQQHEHMVPLLOKE-UHFFFAOYSA-N 1,1,2,2-tetrafluoro-1-methoxyethane Chemical compound COC(F)(F)C(F)F YQQHEHMVPLLOKE-UHFFFAOYSA-N 0.000 description 2
- CRLSHTZUJTXOEL-UHFFFAOYSA-N 2,2-difluoroacetyl fluoride Chemical compound FC(F)C(F)=O CRLSHTZUJTXOEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- -1 WSix Inorganic materials 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920006926 PFC Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
本発明は、クリーニング性能に優れるだけでなく、入手が容易で、環境に負荷をかけるCF4を実質的に副生しない新規なクリーニングガスを提供する。
【解決手段】
CHF2COFを含んでなる堆積物のクリーニングガスであって、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krなどを含むことができ、W、Ti、Mo、Re、Ge、P、Si、V、Nb、Ta、Se、Te、Mo、Re、Os、Ir、Sb、Ge、Au、Ag、As、Cr及びその化合物などを含む堆積物に適用できる。
【選択図】 図1
Description
[発明1]化学的気相堆積法(CVD法)、有機金属気相成長法(MOCCD)、スパッタリング法、ゾルゲル法または蒸着法を用いて薄膜、厚膜、粉体またはウイスカを製造する際に製造装置の内壁またはその付属装置に付随的に堆積した堆積物を除去するためのCHF2COFを含んでなるクリーニングガス。
[発明2]堆積物が、成膜装置に堆積した堆積物である発明1のクリーニングガス。
[発明3]堆積物が、W、Ti、Mo、Re、Ge、P、Si、V、Nb、Ta、Se、Te、Mo、Re、Os、Ir、Sb、Ge、Au、Ag、As、Cr、Hf、Zr、Ni、Co及びその化合物を含む堆積物である発明1または2のクリーニングガス。
[発明4]堆積物が、ケイ素含有付着物である発明1〜3のクリーニングガス。
[発明5]クリーニングガスが、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む発明1〜4のクリーニングガス。
[発明6]クリーニングガスが、CHF2COFとO2を少なくとも含む発明1〜5のクリーニングガス。
[発明7]クリーニングガスが、CHF2COFとO2とCOを少なくとも含む発明1〜6のクリーニングガス。
[発明8]発明5〜7のクリーニングガスを用いる堆積物の除去方法。
[発明9]堆積物が、成膜装置に堆積した堆積物である発明8の堆積物の除去方法。
[発明10]堆積物が、W、Ti、Mo、Re、Ge、P、Si、V、Nb、Ta、Se、Te、Mo、Re、Os、Ir、Sb、Ge、Au、Ag、As、Cr、Hf、Zr、Ni、Co及びその化合物を含む堆積物である発明8または9の堆積物の除去方法。
[発明11]堆積物が、ケイ素含有付着物である発明8〜10の堆積物の除去方法。
[発明12]発明5〜9のクリーニングガスをリモートプラズマによる高周波またはマイクロ波で活性化させて用いる堆積物の除去方法。
CHF2COFは、洗浄剤、発泡剤等として使用されているHFE−254pc(CHF2CF2OMe)やHFE−374pc−f(CHF2CF2OEt)等のCHF2CF2OR(RはMe,Et,n−Pr,iso−Pr,n−Bu,sec−Bu,iso−Bu,tert−Bu等のアルキル基アルキル基)の1−アルコキシ−1,1,2,2−テトラフルオロエタンを接触分解することによって容易かつ定量的に合成可能である。また、HFE−254pcやHFE−374pc−fは、工業的に大量生産されているテトラフルオロエチレンにメタノールやエタノールを付加することで合成できるので、非常に入手の容易な化合物である。
実施例1〜4、比較例1〜5
図1に実験に使用した装置の概略図を記した。高周波電源3(13.56MHz、50W)を用いて、ガス導入口から表1に示す流量で供給した試料ガス(ジフルオロ酢酸フルオライド(CHF2COF)、酸素(O2)、一酸化炭素(CO))を反応チャンバー1の上部に取り付けたサファイア管7内で励起して、生成した活性種をガス流によりチャンバー内に供給し、試料ホルダ11に固定した試料12(PをドープしたSi基板)のエッチングを行った。試料ガスは、CHF2COF、CF3COF、CF4、C2F6は第一ガス導入口4から、O2は第二ガス導入口5から、COは第三ガス導入口6からそれぞれマスフローコントローラー(図示せず。)を介して導入した。基盤(試料ホルダ11)温度25℃、圧力13.3Pa(0.1torr)に設定した。排ガスは、メカニカルブースターポンプの排気側で2リットル/分の窒素を加えて希釈し、FT−IRにてCF4濃度を検量線法により定量した。実施例1〜4終了後に、装置内を点検したが、腐食等は認められなかった。CHF2COFと比較のため既存のクリーニングガス(CF3COF、CF4、C2F6 )のエッチング速度も測定して比較例とした。それらの結果を表1に示した。なお、表中のNDは検出下限界以下を表す。エッチング速度はエッチング前後の膜厚をエッチング時間で除して求めた。
2 アース
3 高周波電源
4 第一ガス導入口
5 第二ガス導入口
6 第三ガス導入口
7 サファイア管
8 誘導コイル
9 電子式圧力計
10 排気ガスライン
11 試料ホルダ
12 試料
Claims (12)
- 化学的気相堆積法(CVD法)、有機金属気相成長法(MOCCD)、スパッタリング法、ゾルゲル法または蒸着法を用いて薄膜、厚膜、粉体またはウイスカを製造する際に製造装置の内壁またはその付属装置に付随的に堆積した堆積物を除去するためのCHF2COFを含んでなるクリーニングガス。
- 堆積物が、成膜装置に堆積した堆積物である請求項1に記載のクリーニングガス。
- 堆積物が、W、Ti、Mo、Re、Ge、P、Si、V、Nb、Ta、Se、Te、Mo、Re、Os、Ir、Sb、Ge、Au、Ag、As、Cr、Hf、Zr、Ni、Co及びその化合物を含む堆積物である請求項1または2に記載のクリーニングガス。
- 堆積物が、ケイ素含有付着物である請求項1〜3のいずれか1項に記載のクリーニングガス。
- クリーニングガスが、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む請求項1〜4のいずれか1項に記載のクリーニングガス。
- クリーニングガスが、CHF2COFとO2を少なくとも含む請求項1〜5のいずれか1項に記載のクリーニングガス。
- クリーニングガスが、CHF2COFとO2とCOを少なくとも含む請求項1〜6のいずれか1項に記載のクリーニングガス。
- 請求項5〜7のいずれか1項に記載のクリーニングガスを用いる堆積物の除去方法。
- 堆積物が、成膜装置に堆積した堆積物である請求項8に記載の堆積物の除去方法。
- 堆積物が、W、Ti、Mo、Re、Ge、P、Si、V、Nb、Ta、Se、Te、Mo、Re、Os、Ir、Sb、Ge、Au、Ag、As、Cr、Hf、Zr、Ni、Co及びその化合物を含む堆積物である請求項8または9に記載の堆積物の除去方法。
- 堆積物が、ケイ素含有付着物である請求項8〜10に記載の堆積物の除去方法。
- 請求項5〜9のいずれか1項に記載のクリーニングガスをリモートプラズマによる高周波またはマイクロ波で活性化させて用いる堆積物の除去方法。
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JP2009273030A JP5691163B2 (ja) | 2009-12-01 | 2009-12-01 | クリーニングガス |
CN2010800547530A CN102639748A (zh) | 2009-12-01 | 2010-11-19 | 清洁气体 |
PCT/JP2010/070655 WO2011068038A1 (ja) | 2009-12-01 | 2010-11-19 | クリーニングガス |
US13/513,042 US20120234351A1 (en) | 2009-12-01 | 2010-11-19 | Cleaning Gas |
KR1020127009401A KR101363440B1 (ko) | 2009-12-01 | 2010-11-19 | 클리닝 가스 및 퇴적물의 제거 방법 |
EP10834490.4A EP2505687A4 (en) | 2009-12-01 | 2010-11-19 | CLEANING GAS |
TW099140847A TWI411662B (zh) | 2009-12-01 | 2010-11-25 | Cleaning gas |
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JP5655296B2 (ja) * | 2009-12-01 | 2015-01-21 | セントラル硝子株式会社 | エッチングガス |
CN103882392A (zh) * | 2012-12-21 | 2014-06-25 | 比亚迪股份有限公司 | 一种防指纹薄膜的制备方法及防指纹薄膜 |
CN105396838B (zh) * | 2014-09-04 | 2019-01-18 | 中国石油化工集团公司 | 一种用于载线激光分析仪的信号接收光学视窗的吹扫方法 |
KR20160123575A (ko) * | 2015-04-16 | 2016-10-26 | 삼성전자주식회사 | 전자 소자 제조 장치와 세정 방법 및 이를 이용한 전자 소자의 제조 방법 |
WO2017175643A1 (ja) * | 2016-04-05 | 2017-10-12 | 関東電化工業株式会社 | 半導体製造装置のクリーニング方法 |
WO2017191745A1 (ja) * | 2016-05-02 | 2017-11-09 | 吉野石膏株式会社 | 粉体の飛散性評価方法及び粉体の飛散性評価装置 |
JP7241627B2 (ja) * | 2019-07-05 | 2023-03-17 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
CN110610845A (zh) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | 一种p5000机台沟槽刻蚀腔体清洁方法 |
KR20220051214A (ko) * | 2019-11-12 | 2022-04-26 | 쇼와 덴코 가부시키가이샤 | 부착물 제거 방법 및 성막 방법 |
CN112458435B (zh) * | 2020-11-23 | 2022-12-09 | 北京北方华创微电子装备有限公司 | 原子层沉积设备及清洗方法 |
CN116110812A (zh) * | 2021-11-09 | 2023-05-12 | 上海华力微电子有限公司 | 金属刻蚀机台腔体预防性维护方法 |
CN115283030A (zh) * | 2022-08-03 | 2022-11-04 | 广东顺德工业设计研究院(广东顺德创新设计研究院) | 一种聚合物微流控芯片的键合方法以及聚合物微流控芯片 |
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- 2010-11-19 US US13/513,042 patent/US20120234351A1/en not_active Abandoned
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TW201139622A (en) | 2011-11-16 |
WO2011068038A1 (ja) | 2011-06-09 |
KR20120056295A (ko) | 2012-06-01 |
EP2505687A1 (en) | 2012-10-03 |
TWI411662B (zh) | 2013-10-11 |
EP2505687A4 (en) | 2013-07-24 |
KR101363440B1 (ko) | 2014-02-14 |
JP5691163B2 (ja) | 2015-04-01 |
US20120234351A1 (en) | 2012-09-20 |
CN102639748A (zh) | 2012-08-15 |
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