JP2011109155A - 縦型発光ダイオード素子及びその製造方法 - Google Patents
縦型発光ダイオード素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000013532 laser treatment Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
せることができる縦型発光ダイオード素子及びその製造方法を提供すること。
【解決手段】本発明に係る縦型発光ダイオード素子は、n型電極160と、前記n型電極
160の下面に形成されて、前記n型電極160と接する表面にN元素よりGa元素が多
く含有されたGa+N層110cを有するn型窒化ガリウム層110と、前記n型窒化ガ
リウム層110の下面に形成された活性層120と、前記活性層120の下面に形成され
たp型窒化ガリウム層130と、前記p型窒化ガリウム層130の下面に形成されたp型
電極140と、前記p型電極140の下面に形成された構造支持層150と、を含む。
【選択図】図2
Description
図2を参照して、本発明の一実施形態に係る縦型LED素子の構造について詳細に説明する。図2は、本発明に係る縦型発光ダイオード素子の構造を示した断面図である。
本発明の一実施形態に係る縦型LED素子の製造方法について、図3A〜図3F及び上述の図2を参照して詳細に説明する。図3A〜図3Fは、本発明の一実施形態に係る縦型LED素子の製造方法の各工程を順次示した断面図である。
110 n型窒化ガリウム層
110a GaN層
110b Ga層
110c Ga+N層
120 活性層
130 p型窒化ガリウム層
140 p型電極
150 構造支持層
160 n型電極
Claims (16)
- n型電極と、
前記n型電極の下面に形成されて、前記n型電極と接する表面にN元素よりGa元素が多く含有されたGa+N層を有するn型窒化ガリウム層と、
前記n型窒化ガリウム層の下面に形成された活性層と、
前記活性層の下面に形成されたp型窒化ガリウム層と、
前記p型窒化ガリウム層の下面に形成されたp型電極と、
前記p型電極の下面に形成された構造支持層と、を含む縦型発光ダイオード素子。 - 前記n型電極は、Ti、Ta及びZrからなるグループから選択された何れか一つ以上の金属からなる単一膜で形成されていることを特徴とする請求項1に記載の縦型発光ダイオード素子。
- 前記n型電極は、Ti、Ta及びZrからなるグループから選択された何れか一つ以上の金属からなる膜を含んで、二層以上に積層されている多層膜で形成されていることを特徴とする請求項1に記載の縦型発光ダイオード素子。
- 前記n型窒化ガリウム層のGa+N層は、前記n型電極と接するn型窒化ガリウム層の表面にレーザー処理を行って形成されていることを特徴とする請求項1から3のいずれか1項に記載の縦型発光ダイオード素子。
- 前記n型窒化ガリウム層のGa+N層は、前記n型電極と接するn型窒化ガリウム層の表面に熱処理を行って形成されていることを特徴とする請求項1から3のいずれか1項に記載の縦型発光ダイオード素子。
- 前記p型電極は、導電性反射部材で形成されていることを特徴とする請求項1から5のいずれか1項に記載の縦型発光ダイオード素子。
- 前記n型電極と接する前記Ga+N層の表面は、凹凸構造を有することを特徴とする請求項1から6のいずれか1項に記載の縦型発光ダイオード素子。
- 基板上にn型窒化ガリウム層、活性層及びp型窒化ガリウム層が順次積層されている発光構造物を形成するステップと、
前記発光構造物上にp型電極を形成するステップと、
前記p型電極上に構造支持層を形成するステップと、
前記基板を除去して、前記n型窒化ガリウム層を露出させるステップと、
露出した前記n型窒化ガリウム層の表面にレーザー処理を行って、表面から下へ順次積層されたGa層とGa+N層を形成するステップと、
レーザー処理した前記n型窒化ガリウム層の表面上にn型電極を形成するステップと、
を含む縦型発光ダイオード素子の製造方法。 - 前記レーザー処理を、GaNのエネルギーバンドギャップ以上のエネルギーを有する波長のレーザーを利用して行うことを特徴とする請求項8に記載の縦型発光ダイオード素子の製造方法。
- 基板上にn型窒化ガリウム層、活性層及びp型窒化ガリウム層が順次積層されている発光構造物を形成するステップと、
前記発光構造物上にp型電極を形成するステップと、
前記p型電極上に構造支持層を形成するステップと、
前記基板を除去して、前記n型窒化ガリウム層を露出させるステップと、
露出した前記n型窒化ガリウム層の表面に熱処理を行って、表面から下へ順次積層されたGa層とGa+N層を形成するステップと、
熱処理された前記n型窒化ガリウム層の表面上にn型電極を形成するステップと、を含む縦型発光ダイオード素子の製造方法。 - 前記熱処理を、500℃以上の温度で行うことを特徴とする請求項10に記載の縦型発光ダイオード素子の製造方法。
- 前記n型電極を、Ti、Ta及びZrからなるグループから選択された何れか一つ以上の金属からなる単一膜で形成することを特徴とする請求項8から11のいずれか1項に記載の縦型発光ダイオード素子の製造方法。
- 前記n型電極を、Ti、Ta及びZrからなるグループから選択された何れか一つ以上の金属からなる膜を含んで、二層以上に積層されている多層膜で形成することを特徴とする請求項8から11のいずれか1項に記載の縦型発光ダイオード素子の製造方法。
- 前記p型電極を、導電性反射部材で形成することを特徴とする請求項8から13のいずれか1項に記載の縦型発光ダイオード素子の製造方法。
- 前記n型電極を形成するステップの前に、前記n型窒化ガリウム層の表面に凹凸構造を形成するステップをさらに含むことを特徴とする請求項8から14のいずれか1項に記載の縦型発光ダイオード素子の製造方法。
- 前記n型窒化ガリウム層の表面上にn型電極を形成するステップの前に前記Ga層を除去するステップをさらに含むことを特徴とする請求項8から15のいずれか1項に記載の縦型発光ダイオード素子の製造方法。
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