JP2011103433A - 薄膜トランジスタ及びこれを備えた有機電界発光表示装置 - Google Patents
薄膜トランジスタ及びこれを備えた有機電界発光表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 239000000126 substance Substances 0.000 claims abstract description 23
- 229910007717 ZnSnO Inorganic materials 0.000 claims abstract description 20
- 239000011701 zinc Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 229910052718 tin Inorganic materials 0.000 claims abstract description 16
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 12
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 59
- 239000011241 protective layer Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 150000001768 cations Chemical class 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】ソース/ドレイン領域及びチャネル領域で構成される活性層としての酸化物半導体層と、チャネル領域と重なる領域に形成されるゲート電極と、酸化物半導体層とゲート電極との間に形成されるゲート絶縁膜と、酸化物半導体層のソース/ドレイン領域にそれぞれ電気的に連結されるソース/ドレイン電極とが含まれ、酸化物半導体層は亜鉛錫酸化物(ZnSnO)で実現される酸化物半導体に酸素との電気陰性度の差が2以上であり、原子半径がZn又はSnと類似する物質Xが添加されて実現される。
【選択図】図1A
Description
12 バッファ層
14 ゲート電極
16 絶縁膜
18a チャネル領域
18b ソース領域
18c ドレイン領域
18 酸化物半導体層
22 保護層
20a、20b ソース及びドレイン電極
Claims (13)
- ソース/ドレイン領域及びチャネル領域で構成される活性層としての酸化物半導体層と、
前記チャネル領域と重なる領域に形成されるゲート電極と、
前記酸化物半導体層とゲート電極との間に形成されるゲート絶縁膜と、
前記酸化物半導体層のソース/ドレイン領域にそれぞれ電気的に連結されるソース/ドレイン電極とが含まれ、
前記酸化物半導体層は亜鉛錫酸化物(ZnSnO)で実現される酸化物半導体に酸素との電気陰性度の差が2以上であり、原子半径が前記Zn又はSnと類似する物質Xが添加されて実現されることを特徴とする薄膜トランジスタ。 - 前記酸化物半導体層を形成するカチオンX、Zn、Snの量を百分率に換算すると、前記Xが2〜20%で含有されるように実現されることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記物質Xの電気陰性度は1.6未満であることを特徴とする請求項1または2に記載の薄膜トランジスタ。
- 前記物質Xのイオン半径は0.007〜0.008nmであることを特徴とする請求項1〜3のいずれか1項に記載の薄膜トランジスタ。
- 前記物質XはHf、Zr、Al、Mgのうちの1つであることを特徴とする請求項1〜4のいずれか1項に記載の薄膜トランジスタ。
- 前記酸化物半導体層とソース/ドレイン電極との間に保護層が形成されることを特徴とする請求項1〜5のいずれか1項に記載の薄膜トランジスタ。
- 前記薄膜トランジスタは下部ゲートの構造で実現されることを特徴とする請求項1〜6のいずれか1項に記載の薄膜トランジスタ。
- 前記薄膜トランジスタは上部ゲート構造で実現されることを特徴とする請求項1〜6のいずれか1項に記載の薄膜トランジスタ。
- データ線、走査線の交差部毎に位置し、複数の薄膜トランジスタ及び有機発光素子をそれぞれ含む画素と、
複数の薄膜トランジスタを含み、前記走査線に走査信号を供給する走査駆動部と、
複数の薄膜トランジスタを含み、前記データ線にデータ信号を供給するデータ駆動部とが含まれ、
前記画素、走査駆動部、データ駆動部のうち少なくとも1つ以上に備えられる薄膜トランジスタが、
ソース/ドレイン領域及びチャネル領域で構成される活性層としての酸化物半導体層と、
前記チャネル領域と重なる領域に形成されるゲート電極と、
前記酸化物半導体層とゲート電極との間に形成されるゲート絶縁膜と、
前記酸化物半導体層のソース/ドレイン領域にそれぞれ電気的に連結されるソース/ドレイン電極とが含まれ、
前記酸化物半導体層は亜鉛錫酸化物(ZnSnO)で実現される酸化物半導体に酸素との電気陰性度の差が2以上であり、原子半径が前記Zn又はSnと類似する物質Xが添加されて実現されることを特徴とする有機電界発光表示装置。 - 前記酸化物半導体層を形成するカチオンX、Zn、Snの量を百分率に換算すると、前記Xが2〜20%で含有されるように実現されることを特徴とする請求項9に記載の有機電界発光表示装置。
- 前記物質Xの電気陰性度は1.6未満であることを特徴とする請求項9または10に記載の有機電界発光表示装置。
- 前記物質Xのイオン半径は0.007〜0.008nmであることを特徴とする請求項9〜11のいずれか1項に記載の有機電界発光表示装置。
- 前記物質XはHf、Zr、Al、Mgのうちの1つであることを特徴とする請求項9〜12のいずれか1項に記載の有機電界発光表示装置。
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KR20160115076A (ko) | 2015-03-25 | 2016-10-06 | 서울대학교산학협력단 | 높은 전계 효과 이동도를 가지는 BaSnO3 박막 트랜지스터 및 그의 제조 방법 |
CN104779202B (zh) * | 2015-04-24 | 2018-11-06 | 京东方科技集团股份有限公司 | 一种制作阵列基板的方法及其阵列基板和显示装置 |
CN104867941B (zh) * | 2015-04-24 | 2018-05-11 | 京东方科技集团股份有限公司 | 一种制作阵列基板的方法及其阵列基板和显示装置 |
CN105633171A (zh) * | 2016-03-22 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、显示装置 |
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CN108417494B (zh) * | 2018-02-25 | 2020-08-11 | 青岛大学 | 一种基于ZnSnO纳米纤维的场效应晶体管制备方法 |
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JP2013070052A (ja) * | 2011-09-22 | 2013-04-18 | Samsung Display Co Ltd | 酸化物半導体、これを含む薄膜トランジスタ、及び薄膜トランジスタ表示板 |
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TWI413259B (zh) | 2013-10-21 |
TW201117381A (en) | 2011-05-16 |
US20110108830A1 (en) | 2011-05-12 |
JP5285024B2 (ja) | 2013-09-11 |
KR101113370B1 (ko) | 2012-02-29 |
KR20110051799A (ko) | 2011-05-18 |
CN102064188A (zh) | 2011-05-18 |
CN102064188B (zh) | 2015-05-20 |
US8168968B2 (en) | 2012-05-01 |
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