JP2011096993A - 回路構造の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 238000007747 plating Methods 0.000 claims abstract description 122
- 239000002131 composite material Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000000126 substance Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000004020 conductor Substances 0.000 claims description 18
- 239000002861 polymer material Substances 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 182
- 229920005989 resin Polymers 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 4
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- 229920001225 polyester resin Polymers 0.000 description 4
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- -1 polysiloxane Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/465—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
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- H—ELECTRICITY
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- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
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- H—ELECTRICITY
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1152—Replicating the surface structure of a sacrificial layer, e.g. for roughening
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1056—Perforating lamina
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
【解決手段】回路構造の製造方法は、複合誘電層と、回路板130と、複合誘電層と回路板の間に位置する絶縁層120を含み、複合誘電層は、非めっき性誘電層112と非めっき性誘電層112と絶縁層120の間に位置するめっき性誘電層114とを含み、非めっき性誘電層112の材質は、非化学めっき性の材料を含み、めっき性誘電層114の材質は、化学めっき性材料を含む。続いて、複合誘電層と、絶縁層120と回路板130をプレスフィットする。その後、複合誘電層と絶縁層120を貫通する通孔を形成するとともに、通孔中に回路板130の回路層に連接する導電ビア140を形成する。続いて、複合誘電層上に非めっき性誘電層112を貫通する溝パターン116を形成する。その後、化学めっき工程を行い、溝パターン116内に導電パターン150を形成する。
【選択図】図1F
Description
公知技術において、回路層の形成方法は、先ず基板上の全面に金属層をメッキし、その後リソグラフィーエッチング方法により金属層をパターン化する。しかし、公知技術は、メッキ工程で形成される金属層の均一度及びリソグラフィーエッチング工程の精度等の製造過程能力の制限を受け、線幅が40ミクロンより小さい回路の製造は容易ではなく、製品の生産率が低下し、かつ製造コストが高くなる。
112a 表面
114 めっき性誘電層
116 溝パターン
120 絶縁層
140 導電ビア
150 導電パターン
W1、W2 幅
Claims (10)
- 複合誘電層、絶縁層および回路板を含み、そのうち、前記絶縁層は前記複合誘電層と前記回路板の間に位置し、前記複合誘電層は、非めっき性誘電層とめっき性誘電層とを含み、前記めっき性誘電層は前記非めっき性誘電層と前記絶縁層の間に位置し、前記非めっき性誘電層の材質は、非化学めっき性材料を含み、前記めっき性誘電層の材質が化学めっき性材料を含む回路構造の製造方法であって、
前記複合誘電層、前記絶縁層および前記回路板をプレスフィットし、
前記複合誘電層と前記絶縁層を貫通する通孔を形成し、前記通孔が前記回路板の一部回路層を露出させ、
前記通孔中に導電ビアを形成し、前記導電ビアを前記回路層へ連接させ、
前記複合誘電層上に前記非めっき性誘電層を貫通する溝パターンを形成し、
第1の化学めっき工程を行い、前記溝パターン内に導電パターンを形成し、かつ前記導電パターンを前記導電ビアへ連接することを含む回路構造の製造方法。 - 複合層、絶縁層および回路板を含み、そのうち、前記絶縁層は前記複合層と前記回路板の間に位置し、前記複合層は、導電層とめっき性誘電層とを含み、前記めっき性誘電層は前記導電層と前記絶縁層の間に位置する回路構造の製造方法であって、
前記複合層、前記絶縁層および前記回路板をプレスフィットし、
前記複合層と前記絶縁層を貫通する通孔を形成し、前記通孔が前記回路板の一部回路層を露出させ、
前記通孔中に導電ビアを形成し、前記導電ビアを前記回路板の前記回路層へ連接させ、
前記導電層を除去し、
前記めっき性誘電層上に非めっき性誘電層を形成し、前記めっき性誘電層と前記非めっき性誘電層により複合誘電層を形成し、
前記複合誘電層上に前記非めっき性誘電層を貫通する溝パターンを形成し、
第1の化学めっき工程を行い、前記溝パターン内に導電パターンを形成し、かつ前記導電パターンを前記導電ビアへ連接させることを含む回路構造の製造方法。 - 前記導電ビアの形成及び前記導電層の除去の方法が、
前記通孔を形成した後、前記複合層と前記絶縁層上の全面において導電材料を形成し、そのうち前記導電材料の一部を前記通孔に詰め込み、
前記通孔の外に位置する部分の前記導電材料及び前記導電層を除去することを含む請求項2に記載の回路構造の製造方法。 - 前記導電ビアの形成及び前記導電層の除去方法が、
前記通孔を形成する前に前記導電層を除去し、
前記通孔を形成した後、前記めっき性誘電層と前記絶縁層上の全面に導電材料を形成し、そのうち前記導電材料の一部を前記通孔に詰め込み、
前記通孔の外に位置する部分の前記導電材料を除去することを含む請求項2または3に記載の回路構造の製造方法。 - 前記導電パターンを形成した後、前記非めっき性誘電層を除去することを更に含む請求項1から4の何れか1項に記載の回路構造の製造方法。
- 前記導電ビアを形成する方法が、第2の化学めっき工程を行うことを含む請求項1から5の何れか1項に記載の回路構造の製造方法。
- 前記溝パターンが底部を具え、かつ前記底部は前記めっき性誘電層の一部からなる請求項1から6の何れか1項に記載の回路構造の製造方法。
- 前記第1の化学めっき工程における触媒が、前記非めっき性誘導層の表面上に吸着しない請求項1から7の何れか1項に記載の回路構造の製造方法。
- 前記非めっき性誘電層の材質が水酸基官能基又はカルボキシル基官能基を含まない高分子材料を含む請求項1から8の何れか1項に記載の回路構造の製造方法。
- 前記導電パターンと前記導電ビアの間に境界面が存在し、かつ前記境界面は、前記絶縁層の前記回路板から遠く離れた表面で突出している請求項1から9の何れか1項に記載の回路構造の製造方法。
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TW098136682A TWI392419B (zh) | 2009-10-29 | 2009-10-29 | 線路結構的製作方法 |
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CN103179794A (zh) * | 2011-12-21 | 2013-06-26 | 欣兴电子股份有限公司 | 线路板及其制作方法 |
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KR101987374B1 (ko) * | 2012-10-04 | 2019-06-11 | 엘지이노텍 주식회사 | 인쇄회로기판 및 그의 제조 방법 |
TWI620483B (zh) * | 2016-08-04 | 2018-04-01 | 欣興電子股份有限公司 | 線路板的製作方法 |
CN107734879B (zh) * | 2016-08-12 | 2020-05-19 | 欣兴电子股份有限公司 | 线路板的制作方法 |
US11342254B2 (en) * | 2020-03-16 | 2022-05-24 | Qualcomm Incorporated | Multi-dielectric structure in two-layer embedded trace substrate |
CN114916127A (zh) * | 2021-02-09 | 2022-08-16 | 苏州旭创科技有限公司 | 电路板及其制造方法 |
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TWI392419B (zh) | 2013-04-01 |
US8161638B2 (en) | 2012-04-24 |
JP5147872B2 (ja) | 2013-02-20 |
TW201116179A (en) | 2011-05-01 |
US20110100543A1 (en) | 2011-05-05 |
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