JP2011073900A5 - - Google Patents
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- Publication number
- JP2011073900A5 JP2011073900A5 JP2009224554A JP2009224554A JP2011073900A5 JP 2011073900 A5 JP2011073900 A5 JP 2011073900A5 JP 2009224554 A JP2009224554 A JP 2009224554A JP 2009224554 A JP2009224554 A JP 2009224554A JP 2011073900 A5 JP2011073900 A5 JP 2011073900A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- silicon
- thin film
- crystal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 48
- 229910052710 silicon Inorganic materials 0.000 claims 48
- 239000010703 silicon Substances 0.000 claims 48
- 239000013078 crystal Substances 0.000 claims 35
- 239000010409 thin film Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 15
- 238000002441 X-ray diffraction Methods 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000001947 vapour-phase growth Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000002474 experimental method Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009224554A JP5152137B2 (ja) | 2009-09-29 | 2009-09-29 | シリコンエピタキシャルウェーハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009224554A JP5152137B2 (ja) | 2009-09-29 | 2009-09-29 | シリコンエピタキシャルウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011073900A JP2011073900A (ja) | 2011-04-14 |
| JP2011073900A5 true JP2011073900A5 (enExample) | 2012-01-12 |
| JP5152137B2 JP5152137B2 (ja) | 2013-02-27 |
Family
ID=44018282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009224554A Active JP5152137B2 (ja) | 2009-09-29 | 2009-09-29 | シリコンエピタキシャルウェーハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5152137B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6032186B2 (ja) * | 2013-11-29 | 2016-11-24 | 信越半導体株式会社 | シリコンエピタキシャルウエーハの評価方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0693433B2 (ja) * | 1987-04-15 | 1994-11-16 | 日本電気株式会社 | 半導体装置用基板 |
| JPH09199381A (ja) * | 1996-01-12 | 1997-07-31 | Toshiba Ceramics Co Ltd | エピタキシャルウエハ用シリコン基板及びその製造法 |
| JP4708697B2 (ja) * | 2002-11-11 | 2011-06-22 | 株式会社Ｓｕｍｃｏ | エピタキシャルシリコンウェーハ |
| JP2007070131A (ja) * | 2005-09-05 | 2007-03-22 | Sumco Corp | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
-
2009
- 2009-09-29 JP JP2009224554A patent/JP5152137B2/ja active Active
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