JP2011073440A5 - - Google Patents
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- Publication number
- JP2011073440A5 JP2011073440A5 JP2010183153A JP2010183153A JP2011073440A5 JP 2011073440 A5 JP2011073440 A5 JP 2011073440A5 JP 2010183153 A JP2010183153 A JP 2010183153A JP 2010183153 A JP2010183153 A JP 2010183153A JP 2011073440 A5 JP2011073440 A5 JP 2011073440A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode layer
- manufacturing
- liquid discharge
- discharge head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 57
- 239000007788 liquid Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 10
- -1 polyparaxylylene Polymers 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920002396 Polyurea Polymers 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 230000001681 protective effect Effects 0.000 description 27
- 229920005989 resin Polymers 0.000 description 23
- 239000011347 resin Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009623 Bosch process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010183153A JP5606213B2 (ja) | 2009-09-04 | 2010-08-18 | 液体吐出ヘッド用基板の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009204640 | 2009-09-04 | ||
| JP2009204640 | 2009-09-04 | ||
| JP2010183153A JP5606213B2 (ja) | 2009-09-04 | 2010-08-18 | 液体吐出ヘッド用基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011073440A JP2011073440A (ja) | 2011-04-14 |
| JP2011073440A5 true JP2011073440A5 (enExample) | 2013-09-12 |
| JP5606213B2 JP5606213B2 (ja) | 2014-10-15 |
Family
ID=43648097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010183153A Active JP5606213B2 (ja) | 2009-09-04 | 2010-08-18 | 液体吐出ヘッド用基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8445298B2 (enExample) |
| JP (1) | JP5606213B2 (enExample) |
| KR (1) | KR101435239B1 (enExample) |
| CN (1) | CN102009527B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5701014B2 (ja) * | 2010-11-05 | 2015-04-15 | キヤノン株式会社 | 吐出素子基板の製造方法 |
| JP5769560B2 (ja) * | 2011-09-09 | 2015-08-26 | キヤノン株式会社 | 液体吐出ヘッド用基体及びその製造方法 |
| JP6598658B2 (ja) * | 2015-01-27 | 2019-10-30 | キヤノン株式会社 | 液体吐出ヘッドの素子基板及び液体吐出ヘッド |
| US10035346B2 (en) | 2015-01-27 | 2018-07-31 | Canon Kabushiki Kaisha | Element substrate and liquid ejection head |
| EP3231007B1 (en) * | 2015-01-30 | 2021-04-14 | Hewlett-Packard Development Company, L.P. | Atomic layer deposition passivation for via |
| JP6881967B2 (ja) | 2016-12-22 | 2021-06-02 | キヤノン株式会社 | 基板の製造方法 |
| JP7224782B2 (ja) * | 2018-05-30 | 2023-02-20 | キヤノン株式会社 | 液体吐出ヘッドおよびその製造方法 |
| JP7237480B2 (ja) * | 2018-06-29 | 2023-03-13 | キヤノン株式会社 | 液体吐出ヘッドおよびその製造方法 |
| US11161351B2 (en) * | 2018-09-28 | 2021-11-02 | Canon Kabushiki Kaisha | Liquid ejection head |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05147223A (ja) * | 1991-12-02 | 1993-06-15 | Matsushita Electric Ind Co Ltd | インクジエツトヘツド |
| JPH06312509A (ja) | 1993-04-30 | 1994-11-08 | Canon Inc | インクジェット記録ヘッド、インクジェット記録ヘッドの製造方法および前記インクジェット記録ヘッドを備えたインクジェット記録装置 |
| US5694684A (en) * | 1994-06-10 | 1997-12-09 | Canon Kabushiki Kaisha | Manufacturing method for ink jet recording head |
| JPH09314607A (ja) * | 1996-05-24 | 1997-12-09 | Ricoh Co Ltd | 射出成形用金型の調整方法ならびに金型調整用フィルムおよびその製造方法 |
| US6790775B2 (en) * | 2002-10-31 | 2004-09-14 | Hewlett-Packard Development Company, L.P. | Method of forming a through-substrate interconnect |
| WO2006001530A2 (en) | 2004-06-28 | 2006-01-05 | Canon Kabushiki Kaisha | Liquid discharge head manufacturing method, and liquid discharge head obtained using this method |
| US7926909B2 (en) * | 2007-01-09 | 2011-04-19 | Canon Kabushiki Kaisha | Ink-jet recording head, method for manufacturing ink-jet recording head, and semiconductor device |
-
2010
- 2010-08-18 JP JP2010183153A patent/JP5606213B2/ja active Active
- 2010-08-27 KR KR1020100083346A patent/KR101435239B1/ko not_active Expired - Fee Related
- 2010-08-30 US US12/871,233 patent/US8445298B2/en not_active Expired - Fee Related
- 2010-08-31 CN CN201010269391.9A patent/CN102009527B/zh not_active Expired - Fee Related
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