JP5361231B2 - インクジェット記録ヘッド及び電子デバイス - Google Patents
インクジェット記録ヘッド及び電子デバイス Download PDFInfo
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- JP5361231B2 JP5361231B2 JP2008080747A JP2008080747A JP5361231B2 JP 5361231 B2 JP5361231 B2 JP 5361231B2 JP 2008080747 A JP2008080747 A JP 2008080747A JP 2008080747 A JP2008080747 A JP 2008080747A JP 5361231 B2 JP5361231 B2 JP 5361231B2
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- 239000010410 layer Substances 0.000 claims description 185
- 239000000758 substrate Substances 0.000 claims description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- 239000011241 protective layer Substances 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 17
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 8
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Description
シリコン基板の一方の面側に設けられた第一の層と、
シリコン基板の一方の面側から一方の面の裏面である他方の面側まで、シリコン基板を貫通するように設けられた、インク流路にインクを供給するための供給口と、
供給口の内壁面を覆い、かつ第一の層上に設けられた保護層と、
一部分は前記保護層上に設けられ、他の部分は前記保護層を貫通している第二の層と、を備える。第一の層が、酸化シリコン、窒化シリコン、炭化シリコンのいずれかからなり、第二の層が、保護層を貫通した部分で、第二の層の下に第二の層と接触して設けられたシリコン基板の一部または第二の層の下に第二の層と接触して設けられた第一の層の一部のいずれかと接触している。
次に、図1に示した記録ヘッドの製造方法について、具体的に説明する。
本実施形態の記録ヘッドは、次の製造方法によっても製造することができる。まず、シリコン基板10の上に、熱CVD法によって窒化シリコン層を成膜し、配線層が形成される領域のみを残すようにパターニングした。
第3の実施形態の記録ヘッドは、図10(a)、(b)に示すように、保護層2a、絶縁層2bが、機能層18と、中間機能層としての酸化シリコン層29とに跨って形成されている。以下、第3の実施形態の記録ヘッドの製造方法について説明する。
図17に示すように構成される第4の実施形態の記録ヘッドは、以下の製造方法で製造される。すなわち、本実施形態の製造方法では、犠牲層として、プラズマCVD法によって成膜された酸化シリコン層が用いられる。また、PSG膜、BSG膜、BPSG膜を用いることもできる。さらに、これら薄膜をCVD法やスピンオン法によって成膜してもよい。
2a 保護層
2b 絶縁層
3 供給口
10 シリコン基板
11 吐出口
13 吐出エネルギ発生素子
15 パッシベイション層
19 インク流路
31 配線層
Claims (6)
- インクを吐出させるエネルギを発生する吐出エネルギ発生素子を一方の面側に有するシリコン基板と、
前記シリコン基板の前記一方の面側に設けられた第一の層と、
前記シリコン基板の前記一方の面側から前記一方の面の裏面である他方の面側まで、前記シリコン基板を貫通するように設けられた、インク流路にインクを供給するための供給口と、
前記供給口の内壁面を覆い、かつ前記第一の層上に設けられた保護層と、
一部分は前記保護層上に設けられ、他の部分は前記保護層を貫通している第二の層と、を備え、
前記第一の層が、酸化シリコン、窒化シリコン、炭化シリコンのいずれかからなり、前記第二の層が、前記保護層を貫通した部分で、前記第二の層の下に前記第二の層と接触して設けられた前記シリコン基板の一部または前記第二の層の下に前記第二の層と接触して設けられた前記第一の層の一部のいずれかと接触している、ことを特徴とするインクジェット記録ヘッド。 - 前記保護層が、ポリパラキシリレン、ポリイミド樹脂、ポリ尿素樹脂のいずれかからなる、請求項1に記載のインクジェット記録ヘッド。
- 前記第二の層が、酸化シリコン、窒化シリコン、炭化シリコン、アルミニウム、銅、タンタル、窒化タンタル、TaSiNのいずれかからなる、請求項1または2に記載のインクジェット記録ヘッド。
- 電気配線を一方の面側に有するシリコン基板を有する電子デバイスであって、
前記シリコン基板の前記一方の面側から前記一方の面の裏面である他方の面側まで貫通する電極と、
前記一方の面側に設けられた第一の層と、
前記電極の外周面を覆い、かつ前記第一の層上に設けられた保護層と、
一部分は前記保護層上に設けられ、他の部分は前記保護層を貫通している第二の層と、を備え、
前記第一の層が、酸化シリコン、窒化シリコン、炭化シリコンのいずれかからなり、前記第二の層が、前記保護層を貫通した部分で、前記第二の層の下に前記第二の層と接触して設けられた前記シリコン基板の一部または前記第二の層の下に前記第二の層と接触して設けられた前記第一の層の一部のいずれかと接触している、ことを特徴とする電子デバイス。 - 前記保護層が、ポリパラキシリレン、ポリイミド樹脂、ポリ尿素樹脂のいずれかからなる、請求項4に記載の電子デバイス。
- 前記第二の層が、酸化シリコン、窒化シリコン、炭化シリコン、アルミニウム、銅、タンタル、窒化タンタル、TaSiNのいずれかからなる、請求項4または5に記載の電子デバイス。
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