JP6223033B2 - 基板の加工方法 - Google Patents
基板の加工方法 Download PDFInfo
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- JP6223033B2 JP6223033B2 JP2013148763A JP2013148763A JP6223033B2 JP 6223033 B2 JP6223033 B2 JP 6223033B2 JP 2013148763 A JP2013148763 A JP 2013148763A JP 2013148763 A JP2013148763 A JP 2013148763A JP 6223033 B2 JP6223033 B2 JP 6223033B2
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- 239000000758 substrate Substances 0.000 title claims description 115
- 238000003672 processing method Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims description 73
- 239000007788 liquid Substances 0.000 claims description 50
- 238000001020 plasma etching Methods 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000009623 Bosch process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14145—Structure of the manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14467—Multiple feed channels per ink chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/052—Ink-jet print cartridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
Description
まず、図3(a)に示すような基板1を用意した。基板1としては、厚さ200μmで、第一の面2と、その反対側の面である第二の面3とを有し、第一の面及び第二の面の結晶方位は(100)のシリコン基板を用いた。
実施例1で、第一の層を横方向に30.0μm四方、縦方向に0.5μmの大きさで形成したのに対し、実施例2では、第一の層を横方向に30.0μm四方、縦方向に0.1μmの大きさで形成した。これに伴い、第一の層を覆う第二の層の大きさも変更した。これ以外の条件は実施例1と同様とし、基板の加工を行った。この工程は、図4(a)、(b)、(c)に示す通りである。
実施例1で、第一の層を横方向に30.0μm四方、縦方向に0.5μmの大きさで形成したのに対し、実施例3では、第一の層を横方向に27.6μm四方、縦方向に0.5μmの大きさで形成した。これに伴い、第一の層を覆う第二の層の大きさも変更した。これ以外の条件は実施例1と同様とし、基板の加工を行った。この工程は、図5(a)、(b)、(c)に示す通りである。
実施例1で、第一の層を設けたのに対し、比較例1では第一の層を設けなかった。これ以外の条件は実施例1と同様とし、基板の加工を行った。
比較例1で形成した第二の層を、基板の第一の面に沿うように、第一の面上に形成した。即ち、第二の層と基板の第一の面とを平行に形成した。
Claims (10)
- 反応性イオンエッチングによって基板に貫通穴を形成する基板の加工方法であって、
第一の層と前記第一の層を覆う第二の層とを第一の面側に有する、シリコンで形成された基板を用意する工程と、
用意した前記基板に、前記第一の面の反対側の面である第二の面から反応性イオンエッチングを行い、前記基板に第一の面から第二の面までを貫通する貫通穴を形成し、前記反応性イオンエッチングを前記第一の層に到達させる工程と、を有し、
前記第一の層は、シリコン、樹脂、poly−Si、P−SiNの少なくともいずれかで形成されており、
前記第二の層は、前記第一の層の側面を覆い前記基板に接触する側壁と、前記第一の層の上面を覆う天井とを形成しており、
前記第二の層は前記第一の層よりも前記反応性イオンエッチングに対するエッチングレートが低い層であることを特徴とする基板の加工方法。 - 前記反応性イオンエッチングを前記第二の層に到達させる請求項1に記載の基板の加工方法。
- 前記第二の層は、前記基板よりも前記反応性イオンエッチングに対するエッチングレートが低い請求項1または2に記載の基板の加工方法。
- 前記第二の層は、P−SiOまたはSiNで形成されている請求項1乃至3のいずれかに記載の基板の加工方法。
- 前記反応性イオンエッチングは、ボッシュプロセスである請求項1乃至4のいずれかに記載の基板の加工方法。
- 前記基板を前記第一の面に対向する方向からみたときに、前記第一の層は形成する貫通穴を覆う大きさである請求項1乃至5のいずれかに記載の基板の加工方法。
- 前記基板の前記第一の面と垂直な方向を縦方向としたときに、前記第一の層の縦方向の長さが0.5μm以上である請求項1乃至6のいずれかに記載の基板の加工方法。
- 前記基板の第一の面と平行な方向を横方向としたときに、前記第一の層は形成する液体供給口よりも横方向に片側で0.7μm以上の大きさである請求項1乃至7のいずれかに記載の基板の加工方法。
- 前記反応性イオンエッチングを前記第二の層の天井に到達させる請求項1乃至8のいずれかに記載の基板の加工方法。
- 前記反応性イオンエッチングを前記天井に到達させた後、前記反応性イオンエッチングを前記側壁に到達させる請求項9に記載の基板の加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013148763A JP6223033B2 (ja) | 2013-07-17 | 2013-07-17 | 基板の加工方法 |
US14/330,662 US9371225B2 (en) | 2013-07-17 | 2014-07-14 | Substrate processing method |
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JP2013148763A JP6223033B2 (ja) | 2013-07-17 | 2013-07-17 | 基板の加工方法 |
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JP6223033B2 true JP6223033B2 (ja) | 2017-11-01 |
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TW201714757A (zh) * | 2015-10-19 | 2017-05-01 | 精工愛普生股份有限公司 | 電子裝置、液體噴出頭、液體噴出裝置及電子裝置之製造方法 |
CN109218945A (zh) * | 2018-08-07 | 2019-01-15 | 瑞声科技(新加坡)有限公司 | Mems结构的制造方法、mems结构及硅麦克风 |
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JPH08274097A (ja) * | 1995-03-31 | 1996-10-18 | Seiko Epson Corp | 半導体装置及び製造方法 |
JP2002075836A (ja) * | 2000-08-30 | 2002-03-15 | Nikon Corp | 転写マスクの製造方法及びそれにより得られた転写マスク |
KR100378353B1 (ko) * | 2001-03-12 | 2003-03-29 | 삼성전자주식회사 | Rie 식각시 발생하는 노칭 저감방법 |
US6555480B2 (en) | 2001-07-31 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate with fluidic channel and method of manufacturing |
JP5031492B2 (ja) * | 2007-09-06 | 2012-09-19 | キヤノン株式会社 | インクジェットヘッド基板の製造方法 |
JP5361231B2 (ja) * | 2008-03-26 | 2013-12-04 | キヤノン株式会社 | インクジェット記録ヘッド及び電子デバイス |
US8012773B2 (en) * | 2009-06-11 | 2011-09-06 | Canon Kabushiki Kaisha | Method for manufacturing liquid discharge head |
US8206998B2 (en) * | 2009-06-17 | 2012-06-26 | Canon Kabushiki Kaisha | Method for manufacturing liquid discharge head |
JP5967876B2 (ja) * | 2010-09-21 | 2016-08-10 | キヤノン株式会社 | 液体吐出ヘッド及びその製造方法 |
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JP2015023092A (ja) | 2015-02-02 |
US9371225B2 (en) | 2016-06-21 |
US20150024605A1 (en) | 2015-01-22 |
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