JP2011049524A - 固体撮像素子および固体撮像素子の製造方法 - Google Patents

固体撮像素子および固体撮像素子の製造方法 Download PDF

Info

Publication number
JP2011049524A
JP2011049524A JP2010065114A JP2010065114A JP2011049524A JP 2011049524 A JP2011049524 A JP 2011049524A JP 2010065114 A JP2010065114 A JP 2010065114A JP 2010065114 A JP2010065114 A JP 2010065114A JP 2011049524 A JP2011049524 A JP 2011049524A
Authority
JP
Japan
Prior art keywords
semiconductor layer
floating diffusion
solid
type semiconductor
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2010065114A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011049524A5 (enExample
Inventor
Hiroyuki Ori
洋征龍 大理
Yasunori Sogo
康則 十河
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010065114A priority Critical patent/JP2011049524A/ja
Priority to TW099120142A priority patent/TWI422024B/zh
Priority to KR1020100066224A priority patent/KR101752494B1/ko
Priority to US12/838,517 priority patent/US9024361B2/en
Priority to CN2010102314132A priority patent/CN101969066B/zh
Publication of JP2011049524A publication Critical patent/JP2011049524A/ja
Publication of JP2011049524A5 publication Critical patent/JP2011049524A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010065114A 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法 Ceased JP2011049524A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010065114A JP2011049524A (ja) 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法
TW099120142A TWI422024B (zh) 2009-07-27 2010-06-21 固態成像器件及製造固態成像器件之方法
KR1020100066224A KR101752494B1 (ko) 2009-07-27 2010-07-09 고체 촬상 소자 및 고체 촬상 소자의 제조 방법
US12/838,517 US9024361B2 (en) 2009-07-27 2010-07-19 Solid-state imaging device and method of manufacturing solid-state imaging device
CN2010102314132A CN101969066B (zh) 2009-07-27 2010-07-20 固体摄像器件及其制造方法和电子装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009174329 2009-07-27
JP2010065114A JP2011049524A (ja) 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011049524A true JP2011049524A (ja) 2011-03-10
JP2011049524A5 JP2011049524A5 (enExample) 2013-04-18

Family

ID=43496508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010065114A Ceased JP2011049524A (ja) 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法

Country Status (5)

Country Link
US (1) US9024361B2 (enExample)
JP (1) JP2011049524A (enExample)
KR (1) KR101752494B1 (enExample)
CN (1) CN101969066B (enExample)
TW (1) TWI422024B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014520397A (ja) * 2011-06-24 2014-08-21 ボリーメディアコミュニケーションズ（シンチェン）カンパニーリミテッド マルチ被写界深度感光デバイス、システム、被写界深度拡大方法及び光学イメージングシステム
CN105390514A (zh) * 2014-08-29 2016-03-09 精工爱普生株式会社 固态成像装置及其制造方法
JP2016100509A (ja) * 2014-11-25 2016-05-30 セイコーエプソン株式会社 固体撮像装置およびその製造方法
US9647016B2 (en) 2014-02-21 2017-05-09 Samsung Electronics Co., Ltd. CMOS image sensors including vertical transistor
WO2023074215A1 (ja) * 2021-10-28 2023-05-04 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び撮像装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103281494B (zh) * 2013-05-03 2018-06-22 上海集成电路研发中心有限公司 Cmos图像传感器及其图像数据的传输方法
JP7126826B2 (ja) * 2015-10-27 2022-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
CN108732609B (zh) * 2017-04-24 2022-01-25 睿生光电股份有限公司 感测装置
US11516422B2 (en) * 2018-05-24 2022-11-29 Gigajot Technology, Inc. Image sensor having column-level correlated-double-sampling charge transfer amplifier
WO2020095689A1 (ja) * 2018-11-06 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子、および電子機器
US11069728B2 (en) * 2019-02-15 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise vertical gate device structure
JP7486929B2 (ja) * 2019-08-22 2024-05-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子、測距装置
CN120751791B (zh) * 2025-08-29 2025-11-21 合肥晶合集成电路股份有限公司 半导体结构、半导体结构的制造方法以及图像传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066481A (ja) * 2004-08-25 2006-03-09 Toshiba Corp 固体撮像装置
JP2007053217A (ja) * 2005-08-18 2007-03-01 Renesas Technology Corp 固体撮像素子
JP2007329479A (ja) * 2006-06-05 2007-12-20 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサ及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
JP4449106B2 (ja) 1999-07-14 2010-04-14 ソニー株式会社 Ｍｏｓ型固体撮像装置及びその製造方法
KR100855282B1 (ko) * 2002-05-18 2008-09-01 매그나칩 반도체 유한회사 이미지 센서 제조 방법
JP2004014911A (ja) * 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP4325557B2 (ja) 2005-01-04 2009-09-02 ソニー株式会社 撮像装置および撮像方法
JP2006311515A (ja) 2005-03-29 2006-11-09 Konica Minolta Holdings Inc 固体撮像装置
KR100752185B1 (ko) * 2005-10-13 2007-08-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7323378B2 (en) * 2005-10-20 2008-01-29 Pixart Imaging Inc. Method for fabricating CMOS image sensor
KR20080014484A (ko) * 2006-08-11 2008-02-14 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP2008084962A (ja) * 2006-09-26 2008-04-10 Toshiba Corp 固体撮像装置及びその製造方法
JP5065789B2 (ja) * 2007-07-27 2012-11-07 パナソニック株式会社 固体撮像装置
JP2009049870A (ja) 2007-08-22 2009-03-05 Sony Corp 固体撮像装置、撮像装置
US20090108385A1 (en) * 2007-10-29 2009-04-30 Micron Technology, Inc. Method and apparatus for improving crosstalk and sensitivity in an imager

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066481A (ja) * 2004-08-25 2006-03-09 Toshiba Corp 固体撮像装置
JP2007053217A (ja) * 2005-08-18 2007-03-01 Renesas Technology Corp 固体撮像素子
JP2007329479A (ja) * 2006-06-05 2007-12-20 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサ及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014520397A (ja) * 2011-06-24 2014-08-21 ボリーメディアコミュニケーションズ（シンチェン）カンパニーリミテッド マルチ被写界深度感光デバイス、システム、被写界深度拡大方法及び光学イメージングシステム
US9647016B2 (en) 2014-02-21 2017-05-09 Samsung Electronics Co., Ltd. CMOS image sensors including vertical transistor
US9806113B2 (en) 2014-02-21 2017-10-31 Samsung Electronics Co., Ltd. CMOS image sensors including vertical transistor
CN105390514A (zh) * 2014-08-29 2016-03-09 精工爱普生株式会社 固态成像装置及其制造方法
JP2016051791A (ja) * 2014-08-29 2016-04-11 セイコーエプソン株式会社 固体撮像装置及びその製造方法
JP2016100509A (ja) * 2014-11-25 2016-05-30 セイコーエプソン株式会社 固体撮像装置およびその製造方法
WO2023074215A1 (ja) * 2021-10-28 2023-05-04 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び撮像装置

Also Published As

Publication number Publication date
TW201126705A (en) 2011-08-01
US9024361B2 (en) 2015-05-05
KR101752494B1 (ko) 2017-06-29
US20110018037A1 (en) 2011-01-27
CN101969066A (zh) 2011-02-09
KR20110011541A (ko) 2011-02-08
CN101969066B (zh) 2012-10-17
TWI422024B (zh) 2014-01-01

Similar Documents

Publication Publication Date Title
KR101752494B1 (ko) 고체 촬상 소자 및 고체 촬상 소자의 제조 방법
US20210335875A1 (en) Solid-state imaging element, manufacturing method, and electronic device
KR101756057B1 (ko) 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP5564909B2 (ja) 固体撮像装置とその製造方法、及び電子機器
JP4514188B2 (ja) 光電変換装置及び撮像装置
US8957357B2 (en) Solid-state imaging device, manufacturing method of the same, and electronic apparatus
TWI473259B (zh) 固態成像元件及其製造方法與電子裝置
US20110248371A1 (en) Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN104969353B (zh) 固态图像传感器、制造方法和电子设备
US20110042723A1 (en) Solid-state imaging device, electronic apparatus, and method for making solid-state imaging device
US20130050552A1 (en) Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus
JP6123866B2 (ja) 固体撮像装置、及び電子機器
JP2011155168A (ja) 半導体素子及びその製造方法、並びに固体撮像装置
JP2017152481A (ja) 画素ユニット、及び撮像素子
JP5842903B2 (ja) 固体撮像装置、及び電子機器
US20140175521A1 (en) Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
US12382197B2 (en) Solid-state imaging element, electronic device, and control method of solid-state imaging element
TWI424559B (zh) 固態成像裝置、電子設備及固態成像裝置之製造方法
JP2008108916A (ja) 固体撮像装置及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130305

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130305

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140317

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141210

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150106

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20150526