CN101969066B - 固体摄像器件及其制造方法和电子装置 - Google Patents

固体摄像器件及其制造方法和电子装置 Download PDF

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Publication number
CN101969066B
CN101969066B CN2010102314132A CN201010231413A CN101969066B CN 101969066 B CN101969066 B CN 101969066B CN 2010102314132 A CN2010102314132 A CN 2010102314132A CN 201010231413 A CN201010231413 A CN 201010231413A CN 101969066 B CN101969066 B CN 101969066B
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type semiconductor
semiconductor layer
impurity diffusion
conductive
diffusion layer
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Chinese (zh)
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CN101969066A (zh
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大理洋征龙
十河康则
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Sony Semiconductor Solutions Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2010102314132A 2009-07-27 2010-07-20 固体摄像器件及其制造方法和电子装置 Expired - Fee Related CN101969066B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009174329 2009-07-27
JP2009-174329 2009-07-27
JP2010-065114 2010-03-19
JP2010065114A JP2011049524A (ja) 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法

Publications (2)

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CN101969066A CN101969066A (zh) 2011-02-09
CN101969066B true CN101969066B (zh) 2012-10-17

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Country Link
US (1) US9024361B2 (enExample)
JP (1) JP2011049524A (enExample)
KR (1) KR101752494B1 (enExample)
CN (1) CN101969066B (enExample)
TW (1) TWI422024B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUE034756T2 (en) * 2011-06-24 2018-02-28 Boly Media Comm Shenzhen Co Multi-depth light sensor, its system, depth of field enhancement and optical imaging system
CN103281494B (zh) * 2013-05-03 2018-06-22 上海集成电路研发中心有限公司 Cmos图像传感器及其图像数据的传输方法
KR102255183B1 (ko) 2014-02-21 2021-05-24 삼성전자주식회사 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법
JP6387745B2 (ja) * 2014-08-29 2018-09-12 セイコーエプソン株式会社 固体撮像装置及びその製造方法
JP6399301B2 (ja) * 2014-11-25 2018-10-03 セイコーエプソン株式会社 固体撮像装置およびその製造方法
JP7126826B2 (ja) * 2015-10-27 2022-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
CN108732609B (zh) * 2017-04-24 2022-01-25 睿生光电股份有限公司 感测装置
US11516422B2 (en) * 2018-05-24 2022-11-29 Gigajot Technology, Inc. Image sensor having column-level correlated-double-sampling charge transfer amplifier
WO2020095689A1 (ja) * 2018-11-06 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子、および電子機器
US11069728B2 (en) * 2019-02-15 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise vertical gate device structure
JP7486929B2 (ja) * 2019-08-22 2024-05-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子、測距装置
CN117981084A (zh) * 2021-10-28 2024-05-03 索尼半导体解决方案公司 半导体装置和成像装置
CN120751791B (zh) * 2025-08-29 2025-11-21 合肥晶合集成电路股份有限公司 半导体结构、半导体结构的制造方法以及图像传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1953194A (zh) * 2005-10-13 2007-04-25 东部电子株式会社 Cmos图像传感器及其制造方法
KR20080014484A (ko) * 2006-08-11 2008-02-14 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP2008084962A (ja) * 2006-09-26 2008-04-10 Toshiba Corp 固体撮像装置及びその製造方法
KR100855282B1 (ko) * 2002-05-18 2008-09-01 매그나칩 반도체 유한회사 이미지 센서 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
JP4449106B2 (ja) 1999-07-14 2010-04-14 ソニー株式会社 Ｍｏｓ型固体撮像装置及びその製造方法
JP2004014911A (ja) * 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2006066481A (ja) * 2004-08-25 2006-03-09 Toshiba Corp 固体撮像装置
JP4325557B2 (ja) 2005-01-04 2009-09-02 ソニー株式会社 撮像装置および撮像方法
JP2006311515A (ja) 2005-03-29 2006-11-09 Konica Minolta Holdings Inc 固体撮像装置
JP2007053217A (ja) * 2005-08-18 2007-03-01 Renesas Technology Corp 固体撮像素子
US7323378B2 (en) * 2005-10-20 2008-01-29 Pixart Imaging Inc. Method for fabricating CMOS image sensor
US7521742B2 (en) * 2006-06-05 2009-04-21 Samsung Electronics Co., Ltd. Complementary metal oxide semiconductor (CMOS) image sensor
JP5065789B2 (ja) * 2007-07-27 2012-11-07 パナソニック株式会社 固体撮像装置
JP2009049870A (ja) 2007-08-22 2009-03-05 Sony Corp 固体撮像装置、撮像装置
US20090108385A1 (en) * 2007-10-29 2009-04-30 Micron Technology, Inc. Method and apparatus for improving crosstalk and sensitivity in an imager

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100855282B1 (ko) * 2002-05-18 2008-09-01 매그나칩 반도체 유한회사 이미지 센서 제조 방법
CN1953194A (zh) * 2005-10-13 2007-04-25 东部电子株式会社 Cmos图像传感器及其制造方法
KR20080014484A (ko) * 2006-08-11 2008-02-14 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP2008084962A (ja) * 2006-09-26 2008-04-10 Toshiba Corp 固体撮像装置及びその製造方法

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TW201126705A (en) 2011-08-01
US9024361B2 (en) 2015-05-05
JP2011049524A (ja) 2011-03-10
KR101752494B1 (ko) 2017-06-29
US20110018037A1 (en) 2011-01-27
CN101969066A (zh) 2011-02-09
KR20110011541A (ko) 2011-02-08
TWI422024B (zh) 2014-01-01

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