TWI422024B - 固態成像器件及製造固態成像器件之方法 - Google Patents
固態成像器件及製造固態成像器件之方法 Download PDFInfo
- Publication number
- TWI422024B TWI422024B TW099120142A TW99120142A TWI422024B TW I422024 B TWI422024 B TW I422024B TW 099120142 A TW099120142 A TW 099120142A TW 99120142 A TW99120142 A TW 99120142A TW I422024 B TWI422024 B TW I422024B
- Authority
- TW
- Taiwan
- Prior art keywords
- type semiconductor
- semiconductor layer
- imaging device
- solid
- state imaging
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 164
- 239000012535 impurity Substances 0.000 claims description 118
- 238000012546 transfer Methods 0.000 claims description 109
- 239000004065 semiconductor Substances 0.000 claims description 73
- 238000002955 isolation Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000007667 floating Methods 0.000 description 72
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- 238000009826 distribution Methods 0.000 description 18
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- 238000010586 diagram Methods 0.000 description 13
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- 238000003860 storage Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 238000004151 rapid thermal annealing Methods 0.000 description 2
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- 125000006850 spacer group Chemical group 0.000 description 2
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- 229910015900 BF3 Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
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- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009174329 | 2009-07-27 | ||
| JP2010065114A JP2011049524A (ja) | 2009-07-27 | 2010-03-19 | 固体撮像素子および固体撮像素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201126705A TW201126705A (en) | 2011-08-01 |
| TWI422024B true TWI422024B (zh) | 2014-01-01 |
Family
ID=43496508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099120142A TWI422024B (zh) | 2009-07-27 | 2010-06-21 | 固態成像器件及製造固態成像器件之方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9024361B2 (enExample) |
| JP (1) | JP2011049524A (enExample) |
| KR (1) | KR101752494B1 (enExample) |
| CN (1) | CN101969066B (enExample) |
| TW (1) | TWI422024B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HUE034756T2 (en) * | 2011-06-24 | 2018-02-28 | Boly Media Comm Shenzhen Co | Multi-depth light sensor, its system, depth of field enhancement and optical imaging system |
| CN103281494B (zh) * | 2013-05-03 | 2018-06-22 | 上海集成电路研发中心有限公司 | Cmos图像传感器及其图像数据的传输方法 |
| KR102255183B1 (ko) | 2014-02-21 | 2021-05-24 | 삼성전자주식회사 | 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법 |
| JP6387745B2 (ja) * | 2014-08-29 | 2018-09-12 | セイコーエプソン株式会社 | 固体撮像装置及びその製造方法 |
| JP6399301B2 (ja) * | 2014-11-25 | 2018-10-03 | セイコーエプソン株式会社 | 固体撮像装置およびその製造方法 |
| JP7126826B2 (ja) * | 2015-10-27 | 2022-08-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像素子の製造方法、並びに電子機器 |
| CN108732609B (zh) * | 2017-04-24 | 2022-01-25 | 睿生光电股份有限公司 | 感测装置 |
| US11516422B2 (en) * | 2018-05-24 | 2022-11-29 | Gigajot Technology, Inc. | Image sensor having column-level correlated-double-sampling charge transfer amplifier |
| WO2020095689A1 (ja) * | 2018-11-06 | 2020-05-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、および電子機器 |
| US11069728B2 (en) * | 2019-02-15 | 2021-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low noise vertical gate device structure |
| JP7486929B2 (ja) * | 2019-08-22 | 2024-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、測距装置 |
| CN117981084A (zh) * | 2021-10-28 | 2024-05-03 | 索尼半导体解决方案公司 | 半导体装置和成像装置 |
| CN120751791B (zh) * | 2025-08-29 | 2025-11-21 | 合肥晶合集成电路股份有限公司 | 半导体结构、半导体结构的制造方法以及图像传感器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200723516A (en) * | 2005-10-20 | 2007-06-16 | Pixart Imaging Inc | Method for fabricating CMOS image sensor |
| TW200931652A (en) * | 2007-10-29 | 2009-07-16 | Aptina Imaging Corp | Method and apparatus for improving crosstalk and sensitivity in an imager |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690423B1 (en) * | 1998-03-19 | 2004-02-10 | Kabushiki Kaisha Toshiba | Solid-state image pickup apparatus |
| JP4449106B2 (ja) | 1999-07-14 | 2010-04-14 | ソニー株式会社 | Ｍｏｓ型固体撮像装置及びその製造方法 |
| KR100855282B1 (ko) * | 2002-05-18 | 2008-09-01 | 매그나칩 반도체 유한회사 | 이미지 센서 제조 방법 |
| JP2004014911A (ja) * | 2002-06-10 | 2004-01-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US6949445B2 (en) | 2003-03-12 | 2005-09-27 | Micron Technology, Inc. | Method of forming angled implant for trench isolation |
| JP2006066481A (ja) * | 2004-08-25 | 2006-03-09 | Toshiba Corp | 固体撮像装置 |
| JP4325557B2 (ja) | 2005-01-04 | 2009-09-02 | ソニー株式会社 | 撮像装置および撮像方法 |
| JP2006311515A (ja) | 2005-03-29 | 2006-11-09 | Konica Minolta Holdings Inc | 固体撮像装置 |
| JP2007053217A (ja) * | 2005-08-18 | 2007-03-01 | Renesas Technology Corp | 固体撮像素子 |
| KR100752185B1 (ko) * | 2005-10-13 | 2007-08-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| US7521742B2 (en) * | 2006-06-05 | 2009-04-21 | Samsung Electronics Co., Ltd. | Complementary metal oxide semiconductor (CMOS) image sensor |
| KR20080014484A (ko) * | 2006-08-11 | 2008-02-14 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
| JP2008084962A (ja) * | 2006-09-26 | 2008-04-10 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JP5065789B2 (ja) * | 2007-07-27 | 2012-11-07 | パナソニック株式会社 | 固体撮像装置 |
| JP2009049870A (ja) | 2007-08-22 | 2009-03-05 | Sony Corp | 固体撮像装置、撮像装置 |
-
2010
- 2010-03-19 JP JP2010065114A patent/JP2011049524A/ja not_active Ceased
- 2010-06-21 TW TW099120142A patent/TWI422024B/zh not_active IP Right Cessation
- 2010-07-09 KR KR1020100066224A patent/KR101752494B1/ko not_active Expired - Fee Related
- 2010-07-19 US US12/838,517 patent/US9024361B2/en not_active Expired - Fee Related
- 2010-07-20 CN CN2010102314132A patent/CN101969066B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200723516A (en) * | 2005-10-20 | 2007-06-16 | Pixart Imaging Inc | Method for fabricating CMOS image sensor |
| TW200931652A (en) * | 2007-10-29 | 2009-07-16 | Aptina Imaging Corp | Method and apparatus for improving crosstalk and sensitivity in an imager |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201126705A (en) | 2011-08-01 |
| US9024361B2 (en) | 2015-05-05 |
| JP2011049524A (ja) | 2011-03-10 |
| KR101752494B1 (ko) | 2017-06-29 |
| US20110018037A1 (en) | 2011-01-27 |
| CN101969066A (zh) | 2011-02-09 |
| KR20110011541A (ko) | 2011-02-08 |
| CN101969066B (zh) | 2012-10-17 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |