TWI422024B - 固態成像器件及製造固態成像器件之方法 - Google Patents

固態成像器件及製造固態成像器件之方法 Download PDF

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Publication number
TWI422024B
TWI422024B TW099120142A TW99120142A TWI422024B TW I422024 B TWI422024 B TW I422024B TW 099120142 A TW099120142 A TW 099120142A TW 99120142 A TW99120142 A TW 99120142A TW I422024 B TWI422024 B TW I422024B
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TW
Taiwan
Prior art keywords
type semiconductor
semiconductor layer
imaging device
solid
state imaging
Prior art date
Application number
TW099120142A
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English (en)
Chinese (zh)
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TW201126705A (en
Inventor
大理洋征龍
十河康則
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新力股份有限公司
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Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201126705A publication Critical patent/TW201126705A/zh
Application granted granted Critical
Publication of TWI422024B publication Critical patent/TWI422024B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW099120142A 2009-07-27 2010-06-21 固態成像器件及製造固態成像器件之方法 TWI422024B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009174329 2009-07-27
JP2010065114A JP2011049524A (ja) 2009-07-27 2010-03-19 固体撮像素子および固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
TW201126705A TW201126705A (en) 2011-08-01
TWI422024B true TWI422024B (zh) 2014-01-01

Family

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TW099120142A TWI422024B (zh) 2009-07-27 2010-06-21 固態成像器件及製造固態成像器件之方法

Country Status (5)

Country Link
US (1) US9024361B2 (enExample)
JP (1) JP2011049524A (enExample)
KR (1) KR101752494B1 (enExample)
CN (1) CN101969066B (enExample)
TW (1) TWI422024B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012174752A1 (zh) * 2011-06-24 2012-12-27 博立码杰通讯(深圳)有限公司 多景深感光器件、系统、景深扩展方法及光学成像系统
CN103281494B (zh) * 2013-05-03 2018-06-22 上海集成电路研发中心有限公司 Cmos图像传感器及其图像数据的传输方法
KR102255183B1 (ko) 2014-02-21 2021-05-24 삼성전자주식회사 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법
JP6387745B2 (ja) * 2014-08-29 2018-09-12 セイコーエプソン株式会社 固体撮像装置及びその製造方法
JP6399301B2 (ja) * 2014-11-25 2018-10-03 セイコーエプソン株式会社 固体撮像装置およびその製造方法
WO2017073334A1 (ja) * 2015-10-27 2017-05-04 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
CN108732609B (zh) * 2017-04-24 2022-01-25 睿生光电股份有限公司 感测装置
WO2019227066A1 (en) * 2018-05-24 2019-11-28 Gigajot Technology Llc Image sensor having pixels with isolated floating diffusions
KR102716764B1 (ko) * 2018-11-06 2024-10-15 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자 및 전자 기기
US11069728B2 (en) * 2019-02-15 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Low noise vertical gate device structure
JP7486929B2 (ja) * 2019-08-22 2024-05-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子、測距装置
KR102975143B1 (ko) 2021-10-20 2026-06-08 삼성전자주식회사 이미지 센서
CN117981084A (zh) * 2021-10-28 2024-05-03 索尼半导体解决方案公司 半导体装置和成像装置
CN120751791B (zh) * 2025-08-29 2025-11-21 合肥晶合集成电路股份有限公司 半导体结构、半导体结构的制造方法以及图像传感器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723516A (en) * 2005-10-20 2007-06-16 Pixart Imaging Inc Method for fabricating CMOS image sensor
TW200931652A (en) * 2007-10-29 2009-07-16 Aptina Imaging Corp Method and apparatus for improving crosstalk and sensitivity in an imager

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
JP4449106B2 (ja) 1999-07-14 2010-04-14 ソニー株式会社 Ｍｏｓ型固体撮像装置及びその製造方法
KR100855282B1 (ko) * 2002-05-18 2008-09-01 매그나칩 반도체 유한회사 이미지 센서 제조 방법
JP2004014911A (ja) * 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP2006066481A (ja) * 2004-08-25 2006-03-09 Toshiba Corp 固体撮像装置
JP4325557B2 (ja) 2005-01-04 2009-09-02 ソニー株式会社 撮像装置および撮像方法
JP2006311515A (ja) 2005-03-29 2006-11-09 Konica Minolta Holdings Inc 固体撮像装置
JP2007053217A (ja) * 2005-08-18 2007-03-01 Renesas Technology Corp 固体撮像素子
KR100752185B1 (ko) * 2005-10-13 2007-08-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7521742B2 (en) * 2006-06-05 2009-04-21 Samsung Electronics Co., Ltd. Complementary metal oxide semiconductor (CMOS) image sensor
KR20080014484A (ko) * 2006-08-11 2008-02-14 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP2008084962A (ja) * 2006-09-26 2008-04-10 Toshiba Corp 固体撮像装置及びその製造方法
JP5065789B2 (ja) * 2007-07-27 2012-11-07 パナソニック株式会社 固体撮像装置
JP2009049870A (ja) 2007-08-22 2009-03-05 Sony Corp 固体撮像装置、撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723516A (en) * 2005-10-20 2007-06-16 Pixart Imaging Inc Method for fabricating CMOS image sensor
TW200931652A (en) * 2007-10-29 2009-07-16 Aptina Imaging Corp Method and apparatus for improving crosstalk and sensitivity in an imager

Also Published As

Publication number Publication date
JP2011049524A (ja) 2011-03-10
CN101969066B (zh) 2012-10-17
CN101969066A (zh) 2011-02-09
US9024361B2 (en) 2015-05-05
KR20110011541A (ko) 2011-02-08
US20110018037A1 (en) 2011-01-27
KR101752494B1 (ko) 2017-06-29
TW201126705A (en) 2011-08-01

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