JP2011040513A - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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- JP2011040513A JP2011040513A JP2009185449A JP2009185449A JP2011040513A JP 2011040513 A JP2011040513 A JP 2011040513A JP 2009185449 A JP2009185449 A JP 2009185449A JP 2009185449 A JP2009185449 A JP 2009185449A JP 2011040513 A JP2011040513 A JP 2011040513A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
Abstract
【構成】本発明の一態様の半導体装置は、Si基板200と、Si基板200内に形成された拡散層10と、Si基板200上にSiを用いて形成されたゲート電極20との少なくとも1つと、前記拡散層10と前記ゲート電極20との少なくとも1つ上に接触して形成されたP元素を含有したNiSi膜40,42と、を備えたことを特徴とする。
【選択図】図2
Description
以下、実施の形態1について、図面を用いて説明する。
図1は、実施の形態1における半導体装置の製造方法の要部を表すフローチャートである。図1において、実施の形態1の半導体装置の製造方法では、リン(P)含有ニッケル(Ni)膜形成工程(S102)と、P含有ニッケルシリサイド(NiSi)膜形成工程(S104)と、P含有Ni膜除去工程(S106)という一連の工程を実施する。
Claims (5)
- シリコン(Si)を用いた拡散層とSiを用いたゲート電極との少なくとも1つが表面に露出した基板上に、リン(P)元素を含有したニッケル(Ni)膜を形成する工程と、
前記P元素を含有したNi膜と前記拡散層とゲート電極との少なくとも1つのSiとから、前記基板上に、P元素を含有したニッケルシリサイド(NiSi)膜を形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記P元素を含有したNi膜は、P元素を含んだNiターゲットを用いた物理気相成長(PVD)法と、P元素を含まないNiターゲットとP元素を含むガスとを用いたPVD法と、Ni膜を形成した後に前記Ni膜にP元素を注入するイオンインプラーテンション法と、Ni元素とP元素を含んだ材料を用いた化学気相成長(CVD)法と、P元素を含んだ液体を用いたNiめっき法とのうちの1つを用いて形成されることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記P元素を含有したNiSi膜は、(200)配向と(020)配向とのうち少なくとも1つを有さない結晶構造で形成されることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- シリコン(Si)基板と、
前記Si基板内に形成された拡散層と、前記Si基板上にSiを用いて形成されたゲート電極との少なくとも1つと、
前記拡散層と前記ゲート電極との少なくとも1つ上に接触して形成されたP元素を含有したニッケルシリサイド(NiSi)膜と、
を備えたことを特徴とする半導体装置。 - 前記P元素を含有したNiSi膜は、(200)配向と(020)配向とのうち少なくとも1つを有さない結晶構造で形成されたことを特徴とする請求項4記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009185449A JP2011040513A (ja) | 2009-08-10 | 2009-08-10 | 半導体装置の製造方法及び半導体装置 |
US12/853,132 US20110031622A1 (en) | 2009-08-10 | 2010-08-09 | Method for fabricating semiconductor device and semiconductor device |
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JP2009185449A JP2011040513A (ja) | 2009-08-10 | 2009-08-10 | 半導体装置の製造方法及び半導体装置 |
Publications (1)
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JP2011040513A true JP2011040513A (ja) | 2011-02-24 |
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JP2009185449A Pending JP2011040513A (ja) | 2009-08-10 | 2009-08-10 | 半導体装置の製造方法及び半導体装置 |
Country Status (2)
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US (1) | US20110031622A1 (ja) |
JP (1) | JP2011040513A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016072352A (ja) * | 2014-09-29 | 2016-05-09 | 株式会社東芝 | 半導体装置の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150118833A1 (en) * | 2013-10-24 | 2015-04-30 | Applied Materials, Inc. | Method of making source/drain contacts by sputtering a doped target |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208641A (ja) * | 1999-01-19 | 2000-07-28 | Nec Corp | 半導体装置の製造方法 |
JP2008311490A (ja) * | 2007-06-15 | 2008-12-25 | Fujitsu Microelectronics Ltd | 半導体装置及びその製造方法 |
JP2009158596A (ja) * | 2007-12-25 | 2009-07-16 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
Family Cites Families (11)
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KR0141165B1 (ko) * | 1995-03-08 | 1998-07-15 | 김광호 | 반도체장치의 트랜지스터 제조방법 |
JPH09205152A (ja) * | 1996-01-25 | 1997-08-05 | Sony Corp | 2層ゲート電極構造を有するcmos半導体装置及びその製造方法 |
JP2001196326A (ja) * | 2000-01-11 | 2001-07-19 | Tokyo Electron Ltd | タングステンシリサイド膜の成膜方法及びゲート電極/配線の作製方法 |
US6806172B1 (en) * | 2001-04-05 | 2004-10-19 | Advanced Micro Devices, Inc. | Physical vapor deposition of nickel |
JP3974507B2 (ja) * | 2001-12-27 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
US7033916B1 (en) * | 2004-02-02 | 2006-04-25 | Advanced Micro Devices, Inc. | Shallow junction semiconductor and method for the fabrication thereof |
US7592674B2 (en) * | 2004-06-23 | 2009-09-22 | Nec Corporation | Semiconductor device with silicide-containing gate electrode and method of fabricating the same |
US7332388B2 (en) * | 2005-03-08 | 2008-02-19 | Micron Technology, Inc. | Method to simultaneously form both fully silicided and partially silicided dual work function transistor gates during the manufacture of a semiconductor device, semiconductor devices, and systems including same |
JP5010310B2 (ja) * | 2007-02-28 | 2012-08-29 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
US20090053883A1 (en) * | 2007-08-24 | 2009-02-26 | Texas Instruments Incorporated | Method of setting a work function of a fully silicided semiconductor device, and related device |
US7772110B2 (en) * | 2007-09-28 | 2010-08-10 | Tokyo Electron Limited | Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing |
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2009
- 2009-08-10 JP JP2009185449A patent/JP2011040513A/ja active Pending
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2010
- 2010-08-09 US US12/853,132 patent/US20110031622A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208641A (ja) * | 1999-01-19 | 2000-07-28 | Nec Corp | 半導体装置の製造方法 |
JP2008311490A (ja) * | 2007-06-15 | 2008-12-25 | Fujitsu Microelectronics Ltd | 半導体装置及びその製造方法 |
JP2009158596A (ja) * | 2007-12-25 | 2009-07-16 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016072352A (ja) * | 2014-09-29 | 2016-05-09 | 株式会社東芝 | 半導体装置の製造方法 |
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