JP2011029475A - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP2011029475A
JP2011029475A JP2009175076A JP2009175076A JP2011029475A JP 2011029475 A JP2011029475 A JP 2011029475A JP 2009175076 A JP2009175076 A JP 2009175076A JP 2009175076 A JP2009175076 A JP 2009175076A JP 2011029475 A JP2011029475 A JP 2011029475A
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JP
Japan
Prior art keywords
plasma
temperature
processing
plasma processing
discharge tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009175076A
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English (en)
Japanese (ja)
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JP2011029475A5 (enExample
Inventor
Daisuke Matsushima
大輔 松嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2009175076A priority Critical patent/JP2011029475A/ja
Priority to KR1020127003962A priority patent/KR101308852B1/ko
Priority to PCT/JP2010/062699 priority patent/WO2011013702A1/ja
Priority to US13/387,635 priority patent/US20120192953A1/en
Priority to TW99124969A priority patent/TW201130399A/zh
Publication of JP2011029475A publication Critical patent/JP2011029475A/ja
Publication of JP2011029475A5 publication Critical patent/JP2011029475A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009175076A 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法 Pending JP2011029475A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009175076A JP2011029475A (ja) 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法
KR1020127003962A KR101308852B1 (ko) 2009-07-28 2010-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법
PCT/JP2010/062699 WO2011013702A1 (ja) 2009-07-28 2010-07-28 プラズマ処理装置及びプラズマ処理方法
US13/387,635 US20120192953A1 (en) 2009-07-28 2010-07-28 Plasma processing apparatus and plasma processing method
TW99124969A TW201130399A (en) 2009-07-28 2010-07-28 Plasma processing device, and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009175076A JP2011029475A (ja) 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2011029475A true JP2011029475A (ja) 2011-02-10
JP2011029475A5 JP2011029475A5 (enExample) 2012-09-06

Family

ID=43529355

Family Applications (1)

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JP2009175076A Pending JP2011029475A (ja) 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (1) US20120192953A1 (enExample)
JP (1) JP2011029475A (enExample)
KR (1) KR101308852B1 (enExample)
TW (1) TW201130399A (enExample)
WO (1) WO2011013702A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004474A (ja) * 2011-06-21 2013-01-07 Toshiba Mitsubishi-Electric Industrial System Corp プラズマ発生装置およびｃｖｄ装置
JP2014522277A (ja) * 2011-06-03 2014-09-04 コリア・ベーシック・サイエンス・インスティテュート 医療用プラズマ滅菌装置
KR101609576B1 (ko) * 2011-06-28 2016-04-06 리카본 인코포레이티드 가스변환시스템
CN106944419A (zh) * 2017-05-12 2017-07-14 中国工程物理研究院核物理与化学研究所 一种去除表面氚污染的等离子体去污系统
CN110389607A (zh) * 2018-04-23 2019-10-29 东京毅力科创株式会社 温度控制方法
JPWO2019180840A1 (ja) * 2018-03-20 2021-03-11 株式会社Ｆｕｊｉ プラズマ装置
JP2022189876A (ja) * 2017-09-20 2022-12-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140256147A1 (en) * 2011-09-26 2014-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP6286215B2 (ja) * 2014-01-28 2018-02-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9934941B2 (en) * 2014-09-30 2018-04-03 Toshiba Memory Corporation Etching apparatus and etching method
JP6739201B2 (ja) * 2016-03-25 2020-08-12 スピードファム株式会社 局所ドライエッチング装置
JP6749258B2 (ja) 2017-01-31 2020-09-02 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
JP6560704B2 (ja) * 2017-03-14 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および基板処理装置
JP7131916B2 (ja) * 2017-03-31 2022-09-06 芝浦メカトロニクス株式会社 プラズマ処理装置
CN108690965B (zh) 2017-03-31 2020-06-30 芝浦机械电子装置株式会社 等离子体处理装置
US12159768B2 (en) 2019-03-25 2024-12-03 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability
JP7546418B2 (ja) * 2020-09-09 2024-09-06 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7324812B2 (ja) * 2021-09-27 2023-08-10 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置及びプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169592A (ja) * 1993-12-13 1995-07-04 Ulvac Japan Ltd プラズマ処理装置における放電管冷却機構
JPH08311666A (ja) * 1995-05-19 1996-11-26 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169592A (ja) * 1993-12-13 1995-07-04 Ulvac Japan Ltd プラズマ処理装置における放電管冷却機構
JPH08311666A (ja) * 1995-05-19 1996-11-26 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014522277A (ja) * 2011-06-03 2014-09-04 コリア・ベーシック・サイエンス・インスティテュート 医療用プラズマ滅菌装置
US9855354B2 (en) 2011-06-03 2018-01-02 Korea Basic Science Institute Apparatus for medical sterilization using plasma
JP2013004474A (ja) * 2011-06-21 2013-01-07 Toshiba Mitsubishi-Electric Industrial System Corp プラズマ発生装置およびｃｖｄ装置
KR101609576B1 (ko) * 2011-06-28 2016-04-06 리카본 인코포레이티드 가스변환시스템
CN106944419A (zh) * 2017-05-12 2017-07-14 中国工程物理研究院核物理与化学研究所 一种去除表面氚污染的等离子体去污系统
JP2022189876A (ja) * 2017-09-20 2022-12-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP7480247B2 (ja) 2017-09-20 2024-05-09 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JPWO2019180840A1 (ja) * 2018-03-20 2021-03-11 株式会社Ｆｕｊｉ プラズマ装置
CN110389607A (zh) * 2018-04-23 2019-10-29 东京毅力科创株式会社 温度控制方法
JP2019192728A (ja) * 2018-04-23 2019-10-31 東京エレクトロン株式会社 温度制御方法
KR20190123227A (ko) * 2018-04-23 2019-10-31 도쿄엘렉트론가부시키가이샤 온도 제어 방법
KR102697143B1 (ko) * 2018-04-23 2024-08-21 도쿄엘렉트론가부시키가이샤 온도 제어 방법

Also Published As

Publication number Publication date
KR101308852B1 (ko) 2013-09-13
WO2011013702A1 (ja) 2011-02-03
US20120192953A1 (en) 2012-08-02
TW201130399A (en) 2011-09-01
KR20120037485A (ko) 2012-04-19

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