KR101308852B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR101308852B1
KR101308852B1 KR1020127003962A KR20127003962A KR101308852B1 KR 101308852 B1 KR101308852 B1 KR 101308852B1 KR 1020127003962 A KR1020127003962 A KR 1020127003962A KR 20127003962 A KR20127003962 A KR 20127003962A KR 101308852 B1 KR101308852 B1 KR 101308852B1
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KR
South Korea
Prior art keywords
plasma
temperature
discharge tube
processing container
generating
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Expired - Fee Related
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KR1020127003962A
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English (en)
Korean (ko)
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KR20120037485A (ko
Inventor
다이스케 마츠시마
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
KR1020127003962A 2009-07-28 2010-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법 Expired - Fee Related KR101308852B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009175076A JP2011029475A (ja) 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法
JPJP-P-2009-175076 2009-07-28
PCT/JP2010/062699 WO2011013702A1 (ja) 2009-07-28 2010-07-28 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20120037485A KR20120037485A (ko) 2012-04-19
KR101308852B1 true KR101308852B1 (ko) 2013-09-13

Family

ID=43529355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127003962A Expired - Fee Related KR101308852B1 (ko) 2009-07-28 2010-07-28 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US20120192953A1 (enExample)
JP (1) JP2011029475A (enExample)
KR (1) KR101308852B1 (enExample)
TW (1) TW201130399A (enExample)
WO (1) WO2011013702A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102893968B1 (ko) 2022-09-09 2025-12-03 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2716305B1 (en) * 2011-06-03 2016-03-30 Korea Basic Science Institute Apparatus for medical sterilization using plasma
JP5813388B2 (ja) * 2011-06-21 2015-11-17 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
US8633648B2 (en) * 2011-06-28 2014-01-21 Recarbon, Inc. Gas conversion system
US20140256147A1 (en) * 2011-09-26 2014-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP6286215B2 (ja) * 2014-01-28 2018-02-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9934941B2 (en) * 2014-09-30 2018-04-03 Toshiba Memory Corporation Etching apparatus and etching method
JP6739201B2 (ja) * 2016-03-25 2020-08-12 スピードファム株式会社 局所ドライエッチング装置
JP6749258B2 (ja) 2017-01-31 2020-09-02 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
JP6560704B2 (ja) * 2017-03-14 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および基板処理装置
JP7131916B2 (ja) * 2017-03-31 2022-09-06 芝浦メカトロニクス株式会社 プラズマ処理装置
CN108690965B (zh) 2017-03-31 2020-06-30 芝浦机械电子装置株式会社 等离子体处理装置
CN106944419A (zh) * 2017-05-12 2017-07-14 中国工程物理研究院核物理与化学研究所 一种去除表面氚污染的等离子体去污系统
KR102462379B1 (ko) * 2017-09-20 2022-11-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
WO2019180840A1 (ja) * 2018-03-20 2019-09-26 株式会社Ｆｕｊｉ プラズマ装置
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
US12159768B2 (en) 2019-03-25 2024-12-03 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability
JP7546418B2 (ja) * 2020-09-09 2024-09-06 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7324812B2 (ja) * 2021-09-27 2023-08-10 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置及びプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169592A (ja) * 1993-12-13 1995-07-04 Ulvac Japan Ltd プラズマ処理装置における放電管冷却機構
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3218917B2 (ja) * 1995-05-19 2001-10-15 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169592A (ja) * 1993-12-13 1995-07-04 Ulvac Japan Ltd プラズマ処理装置における放電管冷却機構
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102893968B1 (ko) 2022-09-09 2025-12-03 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Also Published As

Publication number Publication date
JP2011029475A (ja) 2011-02-10
WO2011013702A1 (ja) 2011-02-03
US20120192953A1 (en) 2012-08-02
TW201130399A (en) 2011-09-01
KR20120037485A (ko) 2012-04-19

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