TW201130399A - Plasma processing device, and plasma processing method - Google Patents

Plasma processing device, and plasma processing method Download PDF

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Publication number
TW201130399A
TW201130399A TW99124969A TW99124969A TW201130399A TW 201130399 A TW201130399 A TW 201130399A TW 99124969 A TW99124969 A TW 99124969A TW 99124969 A TW99124969 A TW 99124969A TW 201130399 A TW201130399 A TW 201130399A
Authority
TW
Taiwan
Prior art keywords
plasma
temperature
processing
generated
region
Prior art date
Application number
TW99124969A
Other languages
English (en)
Chinese (zh)
Inventor
Daisuke Matsushima
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW201130399A publication Critical patent/TW201130399A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
TW99124969A 2009-07-28 2010-07-28 Plasma processing device, and plasma processing method TW201130399A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009175076A JP2011029475A (ja) 2009-07-28 2009-07-28 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
TW201130399A true TW201130399A (en) 2011-09-01

Family

ID=43529355

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99124969A TW201130399A (en) 2009-07-28 2010-07-28 Plasma processing device, and plasma processing method

Country Status (5)

Country Link
US (1) US20120192953A1 (enExample)
JP (1) JP2011029475A (enExample)
KR (1) KR101308852B1 (enExample)
TW (1) TW201130399A (enExample)
WO (1) WO2011013702A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611454B (zh) * 2011-09-26 2018-01-11 Tokyo Electron Ltd 電漿蝕刻方法
TWI692797B (zh) * 2017-03-31 2020-05-01 日商芝浦機械電子裝置股份有限公司 電漿處理裝置
US11004665B2 (en) 2017-03-31 2021-05-11 Shibaura Mechatronics Corporation Plasma processing apparatus
TWI868477B (zh) * 2021-09-27 2025-01-01 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及程式
TWI890845B (zh) * 2020-09-09 2025-07-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2716305B1 (en) * 2011-06-03 2016-03-30 Korea Basic Science Institute Apparatus for medical sterilization using plasma
JP5813388B2 (ja) * 2011-06-21 2015-11-17 東芝三菱電機産業システム株式会社 プラズマ発生装置およびｃｖｄ装置
US8633648B2 (en) * 2011-06-28 2014-01-21 Recarbon, Inc. Gas conversion system
JP6286215B2 (ja) * 2014-01-28 2018-02-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9934941B2 (en) * 2014-09-30 2018-04-03 Toshiba Memory Corporation Etching apparatus and etching method
JP6739201B2 (ja) * 2016-03-25 2020-08-12 スピードファム株式会社 局所ドライエッチング装置
JP6749258B2 (ja) 2017-01-31 2020-09-02 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
JP6560704B2 (ja) * 2017-03-14 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および基板処理装置
CN106944419A (zh) * 2017-05-12 2017-07-14 中国工程物理研究院核物理与化学研究所 一种去除表面氚污染的等离子体去污系统
KR102462379B1 (ko) * 2017-09-20 2022-11-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
WO2019180840A1 (ja) * 2018-03-20 2019-09-26 株式会社Ｆｕｊｉ プラズマ装置
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
US12159768B2 (en) 2019-03-25 2024-12-03 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121486B2 (ja) * 1993-12-13 2000-12-25 日本真空技術株式会社 プラズマ処理装置における放電管冷却機構
JP3218917B2 (ja) * 1995-05-19 2001-10-15 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611454B (zh) * 2011-09-26 2018-01-11 Tokyo Electron Ltd 電漿蝕刻方法
TWI692797B (zh) * 2017-03-31 2020-05-01 日商芝浦機械電子裝置股份有限公司 電漿處理裝置
US11004665B2 (en) 2017-03-31 2021-05-11 Shibaura Mechatronics Corporation Plasma processing apparatus
TWI890845B (zh) * 2020-09-09 2025-07-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
TWI868477B (zh) * 2021-09-27 2025-01-01 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及程式

Also Published As

Publication number Publication date
KR101308852B1 (ko) 2013-09-13
JP2011029475A (ja) 2011-02-10
WO2011013702A1 (ja) 2011-02-03
US20120192953A1 (en) 2012-08-02
KR20120037485A (ko) 2012-04-19

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