JP2011025404A - 半導電性多結晶ダイヤモンド - Google Patents
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Abstract
【解決手段】Li、Be及びAlをドープされた半導電性ダイヤモンド粒子及び/又は半導電性表面を有する絶縁性ダイヤモンド粒子で形成された超硬質で半導電性のPCD材料が提供され、この材料を取り込まれた工具、及びこの材料の製作方法が提供される。この超硬質PCD材料は、添加剤を含む絶縁性ダイヤモンド粒子原料の層を使用し、複数のダイヤモンド結晶を半導電性表面を含むように変換するよう焼結することにより製作することができる。あるいは、超硬質PCD材料は、Li、Al又はBeをドープされたダイヤモンド結晶からなる半導電性ダイヤモンド粒子原料を焼結して製作される。
【選択図】なし
Description
12 基材
16 超硬質層
24 ドラッグビット本体
28 エッジ
Claims (36)
- 切削エレメントを製作する方法であって、
非導電性ダイヤモンド結晶と添加剤とを含むダイヤモンド粉末層を提供すること、
そして前記非導電性ダイヤモンド結晶と前記添加剤とを、固形半導体材料である多結晶ダイヤモンド層に変換すること、
を含む、切削エレメント製作方法。 - 前記変換が焼結することを含む、請求項1に記載の方法。
- 前記焼結が、複数の前記非導電性ダイヤモンド結晶上に半導電性表層を形成することを含む、請求項2に記載の方法。
- 前記焼結が、前記多結晶ダイヤモンド層全体にわたって前記添加剤を拡散させ、且つ前記多結晶ダイヤモンド層を50オーム以下の抵抗を有するように形成させる、請求項2に記載の方法。
- 前記ダイヤモンド粉末層の提供が、該層内に適量の金属バインダ材料の粉末を提供することを含み、該粉末の量は、前記焼結により作られる前記多結晶ダイヤモンド層が10%以下の質量パーセントの前記金属バインダ材料を含み、且つ50オーム以下の抵抗を有するような量である、請求項2に記載の方法。
- 前記添加剤がホウ素を含む、請求項1に記載の方法。
- 前記添加剤がLi、Be及びAlのうちの少なくとも1つを含む、請求項1に記載の方法。
- 前記非導電性ダイヤモンド結晶が、タイプIのダイヤモンド粒子原料を実質的に含む、請求項1に記載の方法。
- 放電機械加工及び放電研削のうちの一方を用いて前記多結晶ダイヤモンド層を切削することを更に含む、請求項1に記載の方法。
- 前記多結晶ダイヤモンド層に存在する金属材料を浸出させることを含み、浸出後、前記多結晶ダイヤモンド層が1000オーム以下の抵抗を有する、請求項1に記載の方法。
- 前記多結晶ダイヤモンド層が金属バインダ材料を実質的に含有せず、1000オーム以下の抵抗を有する、請求項1に記載の方法。
- 切削エレメントを製作する方法であって、
Be、Li及びAlのうちの少なくとも1種をドープされたダイヤモンド結晶を含むダイヤモンド粒子原料の層を提供すること、及び
焼結して前記ダイヤモンド粒子原料の層を固形半導体材料である多結晶ダイヤモンド層に変換すること、
を含む、切削エレメント製作方法。 - 基材を提供することを更に含み、前記焼結が前記多結晶ダイヤモンド層を前記基材に結合することを更に含む、請求項12に記載の方法。
- 前記ダイヤモンド粒子原料の層の提供が、該層内に金属マトリックス材料の粉末を提供することを含む、請求項12に記載の方法。
- 前記ダイヤモンド粒子原料の層の提供が、該層内に適量の金属バインダ材料の粉末を提供することを含み、該粉末の量は、前記焼結により作られる前記多結晶ダイヤモンド層が10%以下の質量パーセントの前記金属バインダ材料を含み、且つ50オーム以下の抵抗を有するような量である、請求項12に記載の方法。
- 前記多結晶ダイヤモンド層に存在する金属材料を浸出させることを更に含み、該浸出させられた多結晶ダイヤモンド層が1000オーム以下の抵抗を有する、請求項12に記載の方法。
- 放電機械加工及び放電研削のうちの一方を用いて、前記多結晶ダイヤモンド層を切削することを更に含む、請求項12に記載の方法。
- 前記提供が、Be、Li及びAlのうちの少なくとも1種をドープされた前記ダイヤモンド結晶だけから実質的になるダイヤモンド粒子原料の層を提供することを含む、請求項12に記載の方法。
- Be、Li及びAlからなる群から選択された材料をドープされたダイヤモンド結晶を含んでいる多結晶ダイヤモンド材料。
- 半導体材料であることを特徴とする、請求項19に記載の多結晶ダイヤモンド材料。
- P型半導体材料であることを特徴とする、請求項19に記載の多結晶ダイヤモンド材料。
- 10オーム以下の抵抗を有している、請求項19に記載の多結晶ダイヤモンド材料。
- 実質的にタイプIのダイヤモンドだけから作られた実質的に同様の多結晶ダイヤモンド材料の対応する抵抗の10%未満の抵抗を有する、請求項19に記載の多結晶ダイヤモンド材料。
- 80°Kにおいて、実質的にタイプIのダイヤモンドだけから形成された実質的に同様の多結晶ダイヤモンド材料の対応する熱伝導率よりも約15倍大きい熱伝導率を有する、請求項19に記載の多結晶ダイヤモンド材料。
- 金属バインダ材料を実質的に含有しておらず、且つ1000オーム以下の抵抗を有している、請求項19に記載の多結晶ダイヤモンド材料。
- 基材の上に形成された、請求項19に記載の多結晶ダイヤモンド材料を含む切削エレメント。
- タイプIのダイヤモンド結晶を含み、複数の前記タイプIのダイヤモンド結晶が半導電性表層を有している、多結晶ダイヤモンド材料。
- 不純物種を更に含んでおり、該不純物種がLi、Be、B及びAlからなる群から選択されている、請求項27に記載の多結晶ダイヤモンド材料。
- 前記半導電性表層が不純物種を含んでおり、該不純物種がLi、Be、B及びAlからなる群から選択されている、請求項27に記載の多結晶ダイヤモンド材料。
- P型半導電性材料である、請求項27に記載の多結晶ダイヤモンド材料。
- 抵抗が50オーム以下である、請求項27に記載の多結晶ダイヤモンド材料。
- 10%以下の質量パーセントの金属バインダを更に含む、請求項31に記載の多結晶ダイヤモンド材料。
- 金属バインダ材料を実質的に含有しておらず、且つ1000オーム以下の抵抗を有している、請求項27に記載の多結晶ダイヤモンド材料。
- 基材の上に形成された、請求項27に記載の多結晶ダイヤモンド材料を含む切削エレメント。
- 切削エレメントを含むドリルビットであって、前記切削エレメントが、基材と、該基材の上の多結晶ダイヤモンド層とを含んでおり、該多結晶ダイヤモンド層がタイプIのダイヤモンド結晶を含んでおり、複数の該タイプIのダイヤモンド結晶が半導電性表層を有している、切削エレメントを含むドリルビット。
- 切削エレメントを含むドリルビットであって、前記切削エレメントが、基材と、該基材上の多結晶ダイヤモンド層とを含んでおり、該多結晶ダイヤモンド層が、リチウム、ベリリウム及びアルミニウムからなる群から選択された添加剤をドープされたダイヤモンド結晶を含んでいる、切削エレメントを含むドリルビット。
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US20100173567A1 (en) * | 2006-02-06 | 2010-07-08 | Chien-Min Sung | Methods and Devices for Enhancing Chemical Mechanical Polishing Processes |
US7628234B2 (en) * | 2006-02-09 | 2009-12-08 | Smith International, Inc. | Thermally stable ultra-hard polycrystalline materials and compacts |
JP2008087088A (ja) * | 2006-09-29 | 2008-04-17 | Denso Corp | 刃具及び刃具の製造方法 |
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- 2003-02-26 ZA ZA200301565A patent/ZA200301565B/xx unknown
- 2003-02-26 EP EP03251153A patent/EP1340737B1/en not_active Expired - Fee Related
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DE60329718D1 (de) | 2009-11-26 |
US20040172885A1 (en) | 2004-09-09 |
US20030196385A1 (en) | 2003-10-23 |
JP5432084B2 (ja) | 2014-03-05 |
CA2419709C (en) | 2008-09-23 |
DE60301807T2 (de) | 2006-06-29 |
US6846341B2 (en) | 2005-01-25 |
EP1340737A3 (en) | 2004-04-07 |
JP4624649B2 (ja) | 2011-02-02 |
DE60301807D1 (de) | 2006-02-23 |
ZA200301565B (en) | 2003-09-16 |
EP1340737A2 (en) | 2003-09-03 |
EP1340737B1 (en) | 2005-10-12 |
JP2003291036A (ja) | 2003-10-14 |
CA2419709A1 (en) | 2003-08-26 |
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