ZA200301565B - Semiconductive polycrystalline diamond. - Google Patents

Semiconductive polycrystalline diamond.

Info

Publication number
ZA200301565B
ZA200301565B ZA200301565A ZA200301565A ZA200301565B ZA 200301565 B ZA200301565 B ZA 200301565B ZA 200301565 A ZA200301565 A ZA 200301565A ZA 200301565 A ZA200301565 A ZA 200301565A ZA 200301565 B ZA200301565 B ZA 200301565B
Authority
ZA
South Africa
Prior art keywords
polycrystalline diamond
semiconductive
semiconductive polycrystalline
diamond
polycrystalline
Prior art date
Application number
ZA200301565A
Other languages
English (en)
Inventor
Stewart Middlemiss
Original Assignee
Smith International
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Smith International filed Critical Smith International
Publication of ZA200301565B publication Critical patent/ZA200301565B/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/404—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/405—Iron group metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421—Boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C04B2235/427—Diamond
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Composite Materials (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Drilling Tools (AREA)
  • Powder Metallurgy (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Laser Beam Processing (AREA)
ZA200301565A 2002-02-26 2003-02-26 Semiconductive polycrystalline diamond. ZA200301565B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35963002P 2002-02-26 2002-02-26

Publications (1)

Publication Number Publication Date
ZA200301565B true ZA200301565B (en) 2003-09-16

Family

ID=27734770

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200301565A ZA200301565B (en) 2002-02-26 2003-02-26 Semiconductive polycrystalline diamond.

Country Status (6)

Country Link
US (2) US6846341B2 (ja)
EP (1) EP1340737B1 (ja)
JP (2) JP4624649B2 (ja)
CA (1) CA2419709C (ja)
DE (2) DE60329718D1 (ja)
ZA (1) ZA200301565B (ja)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517588B2 (en) * 2003-10-08 2009-04-14 Frushour Robert H High abrasion resistant polycrystalline diamond composite
US7595110B2 (en) * 2003-10-08 2009-09-29 Frushour Robert H Polycrystalline diamond composite
JP5264076B2 (ja) * 2004-01-06 2013-08-14 エレメント シックス リミテッド 工具インサート
KR101091887B1 (ko) * 2004-09-13 2011-12-12 신승도 고전도성 및 투광성을 갖는 다이아몬드성 카본 코팅 및그의 제조 방법
JP2006152424A (ja) * 2004-12-01 2006-06-15 Osg Corp 硬質被膜および硬質被膜被覆加工工具
US7350601B2 (en) 2005-01-25 2008-04-01 Smith International, Inc. Cutting elements formed from ultra hard materials having an enhanced construction
WO2006137401A1 (ja) * 2005-06-20 2006-12-28 Nippon Telegraph And Telephone Corporation ダイヤモンド半導体素子およびその製造方法
US8142261B1 (en) 2006-11-27 2012-03-27 Chien-Min Sung Methods for enhancing chemical mechanical polishing pad processes
US20100173567A1 (en) * 2006-02-06 2010-07-08 Chien-Min Sung Methods and Devices for Enhancing Chemical Mechanical Polishing Processes
US7749050B2 (en) * 2006-02-06 2010-07-06 Chien-Min Sung Pad conditioner dresser
US7628234B2 (en) 2006-02-09 2009-12-08 Smith International, Inc. Thermally stable ultra-hard polycrystalline materials and compacts
JP2008087088A (ja) * 2006-09-29 2008-04-17 Denso Corp 刃具及び刃具の製造方法
US8028771B2 (en) 2007-02-06 2011-10-04 Smith International, Inc. Polycrystalline diamond constructions having improved thermal stability
US7942219B2 (en) 2007-03-21 2011-05-17 Smith International, Inc. Polycrystalline diamond constructions having improved thermal stability
US20090127231A1 (en) * 2007-11-08 2009-05-21 Chien-Min Sung Methods of Forming Superhard Cutters and Superhard Cutters Formed Thereby
US9297211B2 (en) 2007-12-17 2016-03-29 Smith International, Inc. Polycrystalline diamond construction with controlled gradient metal content
US8297382B2 (en) 2008-10-03 2012-10-30 Us Synthetic Corporation Polycrystalline diamond compacts, method of fabricating same, and various applications
US8663349B2 (en) 2008-10-30 2014-03-04 Us Synthetic Corporation Polycrystalline diamond compacts, and related methods and applications
CA2688960A1 (en) * 2008-12-17 2010-06-17 David Ballantyne Multi-element diamond reference standard
US8210287B1 (en) 2009-01-05 2012-07-03 Diamond Products, Limited Mining core drill bit and method of making thereof
US20100192474A1 (en) 2009-01-30 2010-08-05 Lehigh University Ultrahard stishovite nanoparticles and methods of manufacture
SA110310235B1 (ar) 2009-03-31 2014-03-03 بيكر هوغيس انكوربوريتد طرق لترابط مناضد التقطيع مسبقة التشكيل بركائز عامل القطع وعامل القطع المكونة بهذه العمليات
US8079786B2 (en) * 2009-04-22 2011-12-20 Corbin Manufacturing, Inc. Tool insert blanks and method of manufacture
GB2481957B (en) * 2009-05-06 2014-10-15 Smith International Methods of making and attaching tsp material for forming cutting elements, cutting elements having such tsp material and bits incorporating such cutting
CN102482919B (zh) 2009-06-18 2014-08-20 史密斯国际有限公司 具有工程化孔隙率的多晶金刚石切削元件和用于制造这种切削元件的方法
US8771391B2 (en) * 2011-02-22 2014-07-08 Baker Hughes Incorporated Methods of forming polycrystalline compacts
JP5958835B2 (ja) * 2011-04-11 2016-08-02 住友電気工業株式会社 切削工具およびその製造方法
US8858665B2 (en) 2011-04-28 2014-10-14 Robert Frushour Method for making fine diamond PDC
US8741010B2 (en) 2011-04-28 2014-06-03 Robert Frushour Method for making low stress PDC
US8974559B2 (en) 2011-05-12 2015-03-10 Robert Frushour PDC made with low melting point catalyst
US8828110B2 (en) 2011-05-20 2014-09-09 Robert Frushour ADNR composite
US9061264B2 (en) 2011-05-19 2015-06-23 Robert H. Frushour High abrasion low stress PDC
US8833635B1 (en) 2011-07-28 2014-09-16 Us Synthetic Corporation Method for identifying PCD elements for EDM processing
US9482056B2 (en) 2011-12-30 2016-11-01 Smith International, Inc. Solid PCD cutter
CA2825729C (en) 2012-11-21 2018-05-22 Diamond Products, Limited Diamond mining core drill bit and methods of making thereof
CA2854691C (en) 2013-07-03 2017-10-31 Karl H. Moller Method of making diamond mining core drill bit and reamer
KR101977690B1 (ko) 2015-06-03 2019-05-13 핼리버튼 에너지 서비시즈 인코퍼레이티드 다결정 다이아몬드로부터 금속 또는 다른 물질의 전기화학적 제거
US10287824B2 (en) 2016-03-04 2019-05-14 Baker Hughes Incorporated Methods of forming polycrystalline diamond
US11292750B2 (en) 2017-05-12 2022-04-05 Baker Hughes Holdings Llc Cutting elements and structures
US11396688B2 (en) 2017-05-12 2022-07-26 Baker Hughes Holdings Llc Cutting elements, and related structures and earth-boring tools
US11536091B2 (en) 2018-05-30 2022-12-27 Baker Hughes Holding LLC Cutting elements, and related earth-boring tools and methods
KR20220100787A (ko) * 2019-11-26 2022-07-18 스미토모덴키고교가부시키가이샤 다결정 다이아몬드로 이루어진 선단부를 갖는 측정용 공구
TWI735227B (zh) * 2020-05-11 2021-08-01 國立臺北科技大學 複合聚晶鑽石片及其組成與製作方法
US20240091862A1 (en) * 2020-11-30 2024-03-21 Sumitomo Electric Hardmetal Corp. Sintered material and cutting tool
JP7318172B1 (ja) * 2022-05-25 2023-08-01 住友電工ハードメタル株式会社 焼結体及び切削工具

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141855A (en) 1961-08-31 1964-07-21 Gen Electric Method for and product produced by the introduction of boron atoms into the surface of diamond crystals
US3268457A (en) * 1962-04-05 1966-08-23 Armando A Giardini Method of creating electrically semiconducting diamond
US3735321A (en) * 1971-06-18 1973-05-22 Gen Electric Thermistor
US4268276A (en) 1978-04-24 1981-05-19 General Electric Company Compact of boron-doped diamond and method for making same
JPS58199776A (ja) * 1982-05-12 1983-11-21 住友電気工業株式会社 工具用ダイヤモンド焼結体及びその製造方法
US4907377A (en) 1988-06-16 1990-03-13 General Electric Company Directional catalyst alloy sweep through process for preparing diamond compacts
WO1990001986A1 (en) * 1988-08-17 1990-03-08 The Australian National University Diamond compact possessing low electrical resistivity
JP2719163B2 (ja) * 1989-01-26 1998-02-25 昭和電工株式会社 単結晶ダイヤモンドの製造法
JP2695000B2 (ja) 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
US5099296A (en) * 1990-04-06 1992-03-24 Xerox Corporation Thin film transistor
US5266236A (en) * 1991-10-09 1993-11-30 General Electric Company Thermally stable dense electrically conductive diamond compacts
US5213248A (en) * 1992-01-10 1993-05-25 Norton Company Bonding tool and its fabrication
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
US5698328A (en) * 1994-04-06 1997-12-16 The Regents Of The University Of California Diamond thin film electron emitter
US5567251A (en) * 1994-08-01 1996-10-22 Amorphous Alloys Corp. Amorphous metal/reinforcement composite material
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
US6045440A (en) * 1997-11-20 2000-04-04 General Electric Company Polycrystalline diamond compact PDC cutter with improved cutting capability
JPH11292630A (ja) * 1998-04-08 1999-10-26 Ishizuka Kenkyusho:Kk ダイヤモンド−炭化ケイ素複合焼結体及びその製造方法

Also Published As

Publication number Publication date
JP4624649B2 (ja) 2011-02-02
JP5432084B2 (ja) 2014-03-05
US6846341B2 (en) 2005-01-25
CA2419709C (en) 2008-09-23
DE60301807T2 (de) 2006-06-29
EP1340737A2 (en) 2003-09-03
DE60329718D1 (de) 2009-11-26
DE60301807D1 (de) 2006-02-23
JP2003291036A (ja) 2003-10-14
US20030196385A1 (en) 2003-10-23
US20040172885A1 (en) 2004-09-09
CA2419709A1 (en) 2003-08-26
EP1340737A3 (en) 2004-04-07
EP1340737B1 (en) 2005-10-12
JP2011025404A (ja) 2011-02-10

Similar Documents

Publication Publication Date Title
ZA200301565B (en) Semiconductive polycrystalline diamond.
DE60302150D1 (en) N-substituiete heteroaryloxy-aryl-spiro-pyrimidine-2,4,6-trion metalloproteinase inhibitoren
SI1555267T1 (sl) 2,3-DIHIDRO-6-NITROIMIDAZO(2,1-b)OKSAZOLI
AU2003229211A1 (en) Underreamer
SG116506A1 (en) Polishing composition.
ZA200307420B (en) Point chisel.
AU2003241933A1 (en) Gellant
AU2003249568A1 (en) Multi-band modem
GB2404686B (en) Packer
AU2003302624A1 (en) Silicon compounds
GB0328020D0 (en) Silicon compounds
AU2003287853A1 (en) Semiconductor arrangement
ZA200302325B (en) Support.
GB0201618D0 (en) Silicon compounds
EG23241A (en) Beshob.
GB0218515D0 (en) S.d.s.
MXPA02005687A (es) Tablero muro.
ZA200408169B (en) Imidazolinylmethyl aralkylsulfonamides.
MXPA02001688A (es) Marco facil.
MXPA02003350A (es) Calentador-tanque-termo-solar.
ZA200206020B (en) Easy turn.
ZA200304374B (en) Cushion.
ZA200304673B (en) Rock cutter.
ZA200207924B (en) Combination tool.
GB0228597D0 (en) M.p.c