JP2011023595A - 固定撮像素子 - Google Patents

固定撮像素子 Download PDF

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Publication number
JP2011023595A
JP2011023595A JP2009168028A JP2009168028A JP2011023595A JP 2011023595 A JP2011023595 A JP 2011023595A JP 2009168028 A JP2009168028 A JP 2009168028A JP 2009168028 A JP2009168028 A JP 2009168028A JP 2011023595 A JP2011023595 A JP 2011023595A
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JP
Japan
Prior art keywords
main surface
signal processing
pixel circuit
substrate
wiring layer
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Pending
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JP2009168028A
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English (en)
Japanese (ja)
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JP2011023595A5 (enExample
Inventor
Mutsuya Motojima
六都也 本島
Katsumi Dosaka
勝己 堂阪
Masayuki Yamashita
正之 山下
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009168028A priority Critical patent/JP2011023595A/ja
Publication of JP2011023595A publication Critical patent/JP2011023595A/ja
Publication of JP2011023595A5 publication Critical patent/JP2011023595A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009168028A 2009-07-16 2009-07-16 固定撮像素子 Pending JP2011023595A (ja)

Priority Applications (1)

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JP2009168028A JP2011023595A (ja) 2009-07-16 2009-07-16 固定撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009168028A JP2011023595A (ja) 2009-07-16 2009-07-16 固定撮像素子

Publications (2)

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JP2011023595A true JP2011023595A (ja) 2011-02-03
JP2011023595A5 JP2011023595A5 (enExample) 2012-05-10

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ID=43633395

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JP2009168028A Pending JP2011023595A (ja) 2009-07-16 2009-07-16 固定撮像素子

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JP (1) JP2011023595A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098420A (ja) * 2011-11-02 2013-05-20 Hamamatsu Photonics Kk 固体撮像装置
JP2013235933A (ja) * 2012-05-08 2013-11-21 Nikon Corp 撮像素子および撮像素子の製造方法
JP2014230231A (ja) * 2013-05-27 2014-12-08 株式会社ニコン 撮像装置及びカメラ
JP2016163011A (ja) * 2015-03-05 2016-09-05 ソニー株式会社 半導体装置および製造方法、並びに電子機器
KR20170124538A (ko) * 2015-03-12 2017-11-10 소니 주식회사 고체 촬상 장치 및 제조 방법, 및 전자 기기
CN111627940A (zh) * 2019-02-27 2020-09-04 中芯集成电路（宁波）有限公司 Cmos图像传感器封装模块及其形成方法、摄像装置
KR20230058730A (ko) * 2015-03-12 2023-05-03 소니그룹주식회사 촬상 장치, 제조 방법 및 전자 기기
JP2023103415A (ja) * 2019-10-31 2023-07-26 株式会社ニコン 撮像装置及びカメラ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799214A (ja) * 1993-05-28 1995-04-11 Toshiba Corp 光電変換素子の実装装置及びその製造方法
JPH08172177A (ja) * 1994-12-16 1996-07-02 Toshiba Corp 固体撮像モジュールおよび内視鏡装置
JPH1084509A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp 撮像装置およびその製造方法
JP2005136373A (ja) * 2003-10-10 2005-05-26 Matsushita Electric Ind Co Ltd 光学デバイスおよびその製造方法
JP2005268567A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 基板およびその製造方法
JP2006253514A (ja) * 2005-03-14 2006-09-21 Matsushita Electric Ind Co Ltd 固体撮像装置と固体撮像装置の製造方法
JP2009105459A (ja) * 2009-02-12 2009-05-14 Seiko Epson Corp 光デバイス、光モジュール及び電子機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799214A (ja) * 1993-05-28 1995-04-11 Toshiba Corp 光電変換素子の実装装置及びその製造方法
JPH08172177A (ja) * 1994-12-16 1996-07-02 Toshiba Corp 固体撮像モジュールおよび内視鏡装置
JPH1084509A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp 撮像装置およびその製造方法
JP2005136373A (ja) * 2003-10-10 2005-05-26 Matsushita Electric Ind Co Ltd 光学デバイスおよびその製造方法
JP2005268567A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 基板およびその製造方法
JP2006253514A (ja) * 2005-03-14 2006-09-21 Matsushita Electric Ind Co Ltd 固体撮像装置と固体撮像装置の製造方法
JP2009105459A (ja) * 2009-02-12 2009-05-14 Seiko Epson Corp 光デバイス、光モジュール及び電子機器

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098420A (ja) * 2011-11-02 2013-05-20 Hamamatsu Photonics Kk 固体撮像装置
JP2013235933A (ja) * 2012-05-08 2013-11-21 Nikon Corp 撮像素子および撮像素子の製造方法
JP2014230231A (ja) * 2013-05-27 2014-12-08 株式会社ニコン 撮像装置及びカメラ
KR102523204B1 (ko) * 2015-03-05 2023-04-20 소니그룹주식회사 반도체 장치 및 제조 방법 및 전자 기기
JP2016163011A (ja) * 2015-03-05 2016-09-05 ソニー株式会社 半導体装置および製造方法、並びに電子機器
CN107112341A (zh) * 2015-03-05 2017-08-29 索尼公司 半导体装置和制造方法以及电子设备
KR20170124526A (ko) * 2015-03-05 2017-11-10 소니 주식회사 반도체 장치 및 제조 방법 및 전자 기기
US11862656B2 (en) 2015-03-05 2024-01-02 Sony Group Corporation Semiconductor device and manufacturing method, and electronic appliance
US10199419B2 (en) 2015-03-05 2019-02-05 Sony Corporation Semiconductor device and manufacturing method, and electronic appliance
CN107112341B (zh) * 2015-03-05 2020-12-18 索尼公司 半导体装置和制造方法以及电子设备
CN112687711A (zh) * 2015-03-05 2021-04-20 索尼公司 半导体装置和制造方法
KR102527414B1 (ko) * 2015-03-12 2023-05-02 소니그룹주식회사 고체 촬상 장치 및 제조 방법, 및 전자 기기
KR20230058730A (ko) * 2015-03-12 2023-05-03 소니그룹주식회사 촬상 장치, 제조 방법 및 전자 기기
KR20170124538A (ko) * 2015-03-12 2017-11-10 소니 주식회사 고체 촬상 장치 및 제조 방법, 및 전자 기기
KR102720747B1 (ko) * 2015-03-12 2024-10-23 소니그룹주식회사 촬상 장치, 제조 방법 및 전자 기기
CN111627940A (zh) * 2019-02-27 2020-09-04 中芯集成电路（宁波）有限公司 Cmos图像传感器封装模块及其形成方法、摄像装置
CN111627940B (zh) * 2019-02-27 2023-08-11 中芯集成电路（宁波）有限公司 Cmos图像传感器封装模块及其形成方法、摄像装置
JP2023103415A (ja) * 2019-10-31 2023-07-26 株式会社ニコン 撮像装置及びカメラ
JP7666543B2 (ja) 2019-10-31 2025-04-22 株式会社ニコン 撮像装置及びカメラ

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