JP2010541242A5 - - Google Patents

Download PDF

Info

Publication number
JP2010541242A5
JP2010541242A5 JP2010526934A JP2010526934A JP2010541242A5 JP 2010541242 A5 JP2010541242 A5 JP 2010541242A5 JP 2010526934 A JP2010526934 A JP 2010526934A JP 2010526934 A JP2010526934 A JP 2010526934A JP 2010541242 A5 JP2010541242 A5 JP 2010541242A5
Authority
JP
Japan
Prior art keywords
extended
substrate
phase material
opening
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010526934A
Other languages
English (en)
Japanese (ja)
Other versions
JP5444228B2 (ja
JP2010541242A (ja
Filing date
Publication date
Priority claimed from US11/861,372 external-priority patent/US7572686B2/en
Application filed filed Critical
Publication of JP2010541242A publication Critical patent/JP2010541242A/ja
Publication of JP2010541242A5 publication Critical patent/JP2010541242A5/ja
Application granted granted Critical
Publication of JP5444228B2 publication Critical patent/JP5444228B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010526934A 2007-09-26 2008-09-24 基板上に薄膜材料を堆積させるための方法 Expired - Fee Related JP5444228B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/861,372 2007-09-26
US11/861,372 US7572686B2 (en) 2007-09-26 2007-09-26 System for thin film deposition utilizing compensating forces
PCT/US2008/011065 WO2009042147A1 (en) 2007-09-26 2008-09-24 Process and deposition system for thin film formation with gas delivery head having spatial separation of reactive gases and movement of the substrate passed the delivery head

Publications (3)

Publication Number Publication Date
JP2010541242A JP2010541242A (ja) 2010-12-24
JP2010541242A5 true JP2010541242A5 (enExample) 2011-11-10
JP5444228B2 JP5444228B2 (ja) 2014-03-19

Family

ID=40195365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526934A Expired - Fee Related JP5444228B2 (ja) 2007-09-26 2008-09-24 基板上に薄膜材料を堆積させるための方法

Country Status (6)

Country Link
US (2) US7572686B2 (enExample)
EP (1) EP2193221B1 (enExample)
JP (1) JP5444228B2 (enExample)
CN (1) CN101821427A (enExample)
TW (1) TWI421368B (enExample)
WO (1) WO2009042147A1 (enExample)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
US8092599B2 (en) * 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
JP5179389B2 (ja) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US9238867B2 (en) 2008-05-20 2016-01-19 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US8470718B2 (en) 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
US8293013B2 (en) * 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US20110023775A1 (en) * 2009-07-31 2011-02-03 E.I. Du Pont De Nemours And Company Apparatus for atomic layer deposition
US8657959B2 (en) * 2009-07-31 2014-02-25 E I Du Pont De Nemours And Company Apparatus for atomic layer deposition on a moving substrate
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
US8557328B2 (en) * 2009-10-02 2013-10-15 Ppg Industries Ohio, Inc. Non-orthogonal coater geometry for improved coatings on a substrate
US20110097493A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including non-parallel non-perpendicular slots
US20110097491A1 (en) * 2009-10-27 2011-04-28 Levy David H Conveyance system including opposed fluid distribution manifolds
WO2011062779A1 (en) 2009-11-20 2011-05-26 Eastman Kodak Company Method for selective deposition and devices
US20110140726A1 (en) * 2009-11-23 2011-06-16 Applied Materials, Inc. Apparatus and Methods for Measuring Solar Cell Module Performance
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP5569084B2 (ja) * 2010-03-25 2014-08-13 セイコーエプソン株式会社 画像表示装置および画像表示方法
FI20105905A0 (fi) * 2010-08-30 2010-08-30 Beneq Oy Suutinpää ja laite
FI20105903A0 (fi) * 2010-08-30 2010-08-30 Beneq Oy Laite
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
TWI541378B (zh) 2010-10-16 2016-07-11 奧特科技公司 原子層沉積鍍膜系統及方法
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US20120222620A1 (en) 2011-03-01 2012-09-06 Applied Materials, Inc. Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use
JP5670229B2 (ja) * 2011-03-10 2015-02-18 積水化学工業株式会社 表面処理方法及び装置
CN104081456B (zh) 2011-11-23 2018-07-03 康宁股份有限公司 用于保护玻璃板的气相沉积方法
US8633115B2 (en) * 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
US8618003B2 (en) 2011-12-05 2013-12-31 Eastman Kodak Company Method of making electronic devices using selective deposition
US9748125B2 (en) 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
EP2834309A2 (en) * 2012-04-03 2015-02-11 Yissum Research and Development Company of The Hebrew University of Jerusalem Hybrid metal and metal oxide layers with enhanced activity
FI125341B (en) * 2012-07-09 2015-08-31 Beneq Oy Apparatus and method for treating substrate
US8846545B2 (en) 2012-08-31 2014-09-30 Eastman Kodak Company Method of forming patterned thin film dielectric stack
US8653516B1 (en) 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
US8927434B2 (en) 2012-08-31 2015-01-06 Eastman Kodak Company Patterned thin film dielectric stack formation
US8791023B2 (en) 2012-08-31 2014-07-29 Eastman Kodak Company Patterned thin film dielectric layer formation
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
JP6333941B2 (ja) 2013-03-11 2018-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温処理チャンバリッド及びそれを備えた処理チャンバ
CN104134756A (zh) 2013-04-30 2014-11-05 成均馆大学校产学协力团 多层封装薄膜
US8921236B1 (en) 2013-06-21 2014-12-30 Eastman Kodak Company Patterning for selective area deposition
US8937016B2 (en) 2013-06-21 2015-01-20 Eastman Kodak Company Substrate preparation for selective area deposition
KR101559629B1 (ko) 2013-12-09 2015-10-13 에스엔유 프리시젼 주식회사 원자층 증착장치
JP2017503079A (ja) 2014-01-05 2017-01-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 空間的原子層堆積又はパルス化学気相堆積を使用する膜堆積
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法
US9153445B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company Forming a VTFT with aligned gate
US9093470B1 (en) 2014-03-06 2015-07-28 Eastman Kodak Company VTFT formation using capillary action
US9331205B2 (en) 2014-03-06 2016-05-03 Eastman Kodak Company VTFT with post, cap, and aligned gate
US9147770B1 (en) 2014-03-06 2015-09-29 Eastman Kodak Company VTFT with extended electrode
US9236486B2 (en) 2014-03-06 2016-01-12 Eastman Kodak Company Offset independently operable VTFT electrodes
US9214560B2 (en) 2014-03-06 2015-12-15 Eastman Kodak Company VTFT including overlapping electrodes
US9117914B1 (en) 2014-03-06 2015-08-25 Eastman Kodak Company VTFT with polymer core
US9202898B2 (en) 2014-03-06 2015-12-01 Eastman Kodak Company Fabricating VTFT with polymer core
US9198283B2 (en) 2014-03-06 2015-11-24 Eastman Kodak Company Vertically spaced electrode structure
US9153698B2 (en) 2014-03-06 2015-10-06 Eastman Kodak Company VTFT with gate aligned to vertical structure
US9129993B1 (en) 2014-03-06 2015-09-08 Eastman Kodak Company Forming a VTFT using printing
US9123815B1 (en) 2014-03-06 2015-09-01 Eastman Kodak Company VTFTs including offset electrodes
US9178029B2 (en) 2014-03-06 2015-11-03 Eastman Kodak Company Forming a VTFT gate using printing
WO2015134082A1 (en) 2014-03-06 2015-09-11 Eastman Kodak Company Vtft with polymer core
US9142647B1 (en) 2014-03-06 2015-09-22 Eastman Kodak Company VTFT formation using selective area deposition
US11220737B2 (en) * 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US10196741B2 (en) * 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
CN105336723B (zh) * 2014-07-28 2018-09-14 通用电气公司 半导体模块、半导体模块组件及半导体装置
US9528184B2 (en) * 2015-02-13 2016-12-27 Eastman Kodak Company Atomic-layer deposition method using compound gas jet
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
KR101715192B1 (ko) * 2015-10-27 2017-03-23 주식회사 유진테크 기판처리장치
US20180265977A1 (en) 2017-03-14 2018-09-20 Eastman Kodak Company Deposition system with vacuum pre-loaded deposition head
US10584413B2 (en) 2017-03-14 2020-03-10 Eastman Kodak Company Vertical system with vacuum pre-loaded deposition head
US10422038B2 (en) 2017-03-14 2019-09-24 Eastman Kodak Company Dual gas bearing substrate positioning system
US10550476B2 (en) 2017-03-14 2020-02-04 Eastman Kodak Company Heated gas-bearing backer
US10400332B2 (en) 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US10501848B2 (en) 2017-03-14 2019-12-10 Eastman Kodak Company Deposition system with modular deposition heads
US10895011B2 (en) * 2017-03-14 2021-01-19 Eastman Kodak Company Modular thin film deposition system
US10435788B2 (en) * 2017-03-14 2019-10-08 Eastman Kodak Deposition system with repeating motion profile
US11248292B2 (en) 2017-03-14 2022-02-15 Eastman Kodak Company Deposition system with moveable-position web guides
US11189502B2 (en) * 2018-04-08 2021-11-30 Applied Materials, Inc. Showerhead with interlaced gas feed and removal and methods of use
FR3084275B1 (fr) 2018-07-30 2020-07-31 Centre Nat Rech Scient Tete et systeme compacts de depot en phase vapeur
US11306396B2 (en) * 2018-11-30 2022-04-19 Meidensha Corporation Oxide film forming device
JP6860048B2 (ja) 2019-08-30 2021-04-14 株式会社明電舎 原子層堆積方法
KR102621695B1 (ko) 2021-05-21 2024-01-08 주식회사 인피니티테크놀로지 진공커튼 및 그의 시스템
JP2024541366A (ja) 2021-11-17 2024-11-08 インテグリス・インコーポレーテッド ガスディフューザハウジング、デバイス、および関係する方法
WO2024073518A1 (en) * 2022-09-27 2024-04-04 Coreshell Technologies, Inc. Liquid-phase deposition of thin films

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
CA2016970A1 (en) * 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
US6200389B1 (en) * 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US6127286A (en) * 1998-05-11 2000-10-03 Lsi Logic Corporation Apparatus and process for deposition of thin film on semiconductor substrate while inhibiting particle formation and deposition
JP3329441B2 (ja) * 1998-10-09 2002-09-30 ティーディーケイ株式会社 薄膜形成のための前処理方法
FI118474B (fi) * 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7064089B2 (en) 2002-12-10 2006-06-20 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
DE10261579A1 (de) * 2002-12-23 2004-07-15 Basf Ag Verfahren zur Herstellung von Trehalose-freien Aminosäuren
US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
JP2005089781A (ja) * 2003-09-12 2005-04-07 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
US7413982B2 (en) 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US11136667B2 (en) 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US20080166880A1 (en) 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US7789961B2 (en) 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition

Similar Documents

Publication Publication Date Title
JP2010541242A5 (enExample)
JP2010515821A5 (enExample)
JP2010541241A5 (enExample)
JP2009531548A5 (enExample)
TWI541378B (zh) 原子層沉積鍍膜系統及方法
JP2010541236A5 (enExample)
JP2010515822A5 (enExample)
JP2010515823A5 (enExample)
WO2008085474A3 (en) Delivery device for thin film deposition
JP2015534283A5 (enExample)
JP2009534574A5 (enExample)
JP2011506758A5 (enExample)
TW200609374A (en) Vertical cvd apparatus and cvd method using the same
KR20140144243A (ko) 원자층 증착 방법 및 장치
WO2007126582A3 (en) Apparatus for atomic layer deposition
JP6119408B2 (ja) 原子層堆積装置
JP2018501405A5 (enExample)
WO2008136337A1 (ja) スパッタリング装置及びスパッタリング方法
JP2018536985A (ja) 基板処理装置及びチューブ組立体の組立方法
CN101497990A (zh) 溅射镀膜装置
WO2017068625A1 (ja) 成膜装置
JP6664047B2 (ja) 成膜装置及び成膜方法
KR20150070404A (ko) 선택적 가스 주입 및 추출을 위한 장치
WO2024193388A1 (zh) 基片处理设备及处理方法
WO2014197396A1 (en) Gas deposition head for spatial ald