JP2010540695A - プリントエレクトロニクスを製造するための組成物及びプロセス - Google Patents
プリントエレクトロニクスを製造するための組成物及びプロセス Download PDFInfo
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- JP2010540695A JP2010540695A JP2010525839A JP2010525839A JP2010540695A JP 2010540695 A JP2010540695 A JP 2010540695A JP 2010525839 A JP2010525839 A JP 2010525839A JP 2010525839 A JP2010525839 A JP 2010525839A JP 2010540695 A JP2010540695 A JP 2010540695A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/36—Inkjet printing inks based on non-aqueous solvents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
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- Inks, Pencil-Leads, Or Crayons (AREA)
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Abstract
Description
(1)選択したポリマーを、ロール掛け(50〜250rpm)によるか又は低せん断応力のミキサー(<1000rpm)を用いて低せん断応力の混合環境中で溶媒系に溶解する。ポリマーの溶媒中への溶解を助けるために溶液を加熱してもよい。ポリマーが完全に溶解するまで混合する。典型的な混合条件の例は次の通りである:
エポキシ−50℃100rpmで4時間のロール掛け
PMGI−80℃100rpmで8時間のロール掛け
ノボラック−50℃100rpmで8時間のロール掛け
(2)溶解後、その混合物を室温まで冷却し、熱に敏感な成分をロール掛け(50〜250rpm)によるか又は低せん断応力のミキサー(<1000rpm)を用いて低せん断応力の混合環境中で加える。完全に溶解するまで混合する。この時加える成分は、TAG、架橋剤、染料及び熱に敏感なPAGである。
(3)その溶液の濾過。その濾過のスキームは、様々な製造可能性に適合するように変化させることができるが、基本的なスキームを以下に示す。
圧電プリンタのカートリッジ、例えば、Dimatix社の材料カートリッジモデル#DMC−11610を、約1.5mlの該組成物を満たしたシリンジからの針をその注入口に注意深く挿入することによって満たす。その材料はゆっくり注入してその流体モジュールを満たす。その流体モジュールの圧力ポート及びそのジェットモジュールの開口部は、整列させ、互いにかみ合わせる。その充填されたカートリッジは次いで30分間そのままにして取り込んだ空気がノズルから抜けるように処理する。
化合物半導体の製造:トランジスタ製造におけるリフトオフ;PMGIを表面不活性化のための誘電体層として使用することができる。
リフトオフ:リフトオフは、化合物半導体の用途、例えば、光起電力、垂直共振器表面発光ダイオードレーザー(VCEL)、トランジスタ等において、金属蒸着を制御するために使用することができる。
光エレクトロニクス、例えばLEDの製造等:カプセル化/保護層の堆積、リフトオフプロセスにおける金属蒸着、光反射のためのバックグラウンド回折格子の作成。
エネルギー装置:バッテリー及び燃料電池の応用における製造プロセスを可能にする。
ディスプレー:DLPディスプレー−支持構造物としてのエポキシの堆積、
MEMS:感知装置、作動装置、共振器、マイクロ流体素子;PMGIを、3次元のMEMS装置で使用するための犠牲層の支持体として使用することができる、
印刷したワイヤーボード及び印刷したサーキットボード:プロセスに対するエッチング耐性、
保護層:素子の後部包装。
フォトトリミングは、MEMS、マイクロ流体、ナノインプリントに対する解像度を増すために使用することができ、上記の用途のいずれも向上させるために使用することができる。
エポキシ系組成物1
エポキシ(SU−8)組成物を上に概説したように以下の成分をブレンドすることによって作製した。
エポキシ系組成物2
第2のエポキシ(SU−8)組成物を上に概説したように以下の成分をブレンドすることによって作製した。Dimatix DMP−2800シリーズ16圧電プリントヘッドプリンタと共に使用するとき、この組成物は溶媒系を変えることによって単一パスに対してより厚いフィーチャを生成する。
ノボラック樹脂
ノボラック組成物を、上に概説したように以下の成分をブレンドすることによって作製した。
PMGI組成物
PMGI組成物を、上に概説したように以下の成分をブレンドすることによって作製した。
能動マトリックス液晶ディスプレー(AMLCD)及び能動マトリックス有機発光ダイオードディスプレー(AMOLED)用の光パターニングエポキシの導電性ナノコンポジット
このインクジェットエポキシ組成物は、ナノサイズの導電性酸化インジウムスズ(ITO)の導電性ナノコンポジット(5〜100nmの直径又は単分散ナノスフェア)をAMLCD及びAMOLED用途向けのピクセルの中のリジット及びフレキシブル両方の導電トランジスタのインクジェットパターンに組み込む。そのITOトランジスタをパターン化するために必要な解像度を得るために、次にフォトトリミングを用いる。
光パターニングエポキシの導電性ナノコンポジット
例5に記載の一般的な配合レシピを用い、ITOナノスフェアをTiO2ナノスフェアに置き換えて恒久的用途のために光及び熱硬化性エポキシ中に分散させた酸化チタン(TiO2)ナノスフェア(5〜100nm)からなるナノコンポジットの遮光性誘電体膜がこの例を特定する。
光パターニングエポキシの導電性ナノコンポジット
耐湿性バリア層として使用するための、光又は熱硬化したエポキシと共にナノサイズのシリカ及び/又はゼオライト組成物(5〜100nmの球の直径)からなるナノコンポジットバリア層。例5を基本レシピとして用い、ITOをナノサイズのシリカ及び/又はゼオライトナノコンポジット組成物に置き換えたことがこの例を特定する。
光パターニングエポキシの導電性ナノコンポジット
光又は熱硬化したエポキシポリマーと共に5〜100nmのナノスフェア又は同等物のナノサイズの銀又は銀ナノコンポジット化合物からなるナノコンポジットの抗菌性、抗バクテリア性の膜層。
フォトトリミング
例1又は2のインクジェット印刷したエポキシ組成物は、その後、高解像度のリソグラフィーマスクを通すUV光によりパターン化することができる。このプロセスを実施するためには、上に概説したように光マスクをこれらの画像を生成するようにその印刷した領域に整列させる。フォトトリミングの2つの主要な特徴は、処理中の解像度の増加とスカム(scum)の減少である。フォトトリミングは、印刷可能なPMGI組成物を印刷されたエポキシ又はノボラック配合物と共に積層してそれを画像化するリフトオフプロセスで使用することもでき、さらに解像度を増すことができる。そのフォトトリミングプロセスの結果を図9〜14に示す。
金属蒸着のためのリフトオフプロセス
上で示したように、リフトオフプロセスは、化合物半導体用途、例えば光起電力技術、VCEL、トランジスタ等において、金属蒸着を制御するために使用することができる。本発明の組成物及びプロセスを用いるこの技術の例が図15に示されている。
Claims (22)
- 印刷可能な組成物であって、いずれも該組成物の合計重量を基準とした重量パーセントで、
0.5〜60重量%のエポキシ、ノボラック及びポリ(ジメチルグルタルイミド)からなる群から選択されるポリマー、並びに
40〜99.5重量%の(1)約10℃を超える引火点及び約130℃を超える沸点を有する高沸点溶媒、及び(2)30℃未満の引火点及び130℃以下の沸点を有する低沸点溶媒を含む溶媒組成物、
を特徴とする印刷可能な組成物。 - 前記ポリマーが、ポリ(ジメチルグルタルイミド)であり、前記組成物の合計重量を基準として0.5〜15重量%を含む、請求項1に記載の印刷可能な組成物。
- 前記ポリマーが、ポリ(ジメチルグルタルイミド)であり、前記組成物の合計重量を基準として5〜12重量%を含む、請求項2に記載の印刷可能な組成物。
- 前記ポリマーが、エポキシ又はノボラックであり、前記組成物の合計重量を基準として0.5〜40重量%を含む、請求項1に記載の印刷可能な組成物。
- 前記ポリマーが、エポキシ又はノボラックであり、前記組成物の合計重量を基準として10〜35重量%を含む、請求項4に記載の印刷可能な組成物。
- 前記溶媒組成物が、前記組成物の合計重量を基準として85〜99.5重量%を含む、請求項2に記載の印刷可能な組成物。
- 前記溶媒組成物が、前記組成物の合計重量を基準として88〜95重量%を含む、請求項3に記載の印刷可能な組成物。
- 前記溶媒組成物が、前記組成物の合計重量を基準として60〜99.5重量%を含む、請求項4に記載の印刷可能な組成物。
- 前記溶媒組成物が、前記組成物の合計重量を基準として65〜90重量%を含む、請求項5に記載の印刷可能な組成物。
- 前記高沸点溶媒が、γ−ブチロラクトン、乳酸エチル、2−ヒドロキシイソ酪酸メチル、PGMEA、シクロヘキサノン、テトラヒドロフルフリルアルコール、プロピレンカーボネート、2−ヘプタノン、NMP、ジアセトンアルコール、及びそれらの組合せからなる群から選択される、請求項1に記載の印刷可能な組成物。
- 前記低沸点溶媒が、メチルイソブチルケトン、シクロペンタノン、1,3−ジオキソラン、テトラヒドロフラン(THF)、メチルイソプロピルケトン、2−ペンタノン、ピナコロン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、メチルエチルケトン(MEK)、トルエン、及びそれらの組合せからなる群から選択される、請求項1に記載の印刷可能な組成物。
- 前記組成物の全体重量を基準として、0〜15重量%の範囲の量で架橋剤をさらに含む、請求項1に記載の印刷可能な組成物。
- 前記架橋剤が、前記組成物の全体重量を基準として、0〜10重量%の範囲である、請求項12に記載の印刷可能な組成物。
- 前記架橋剤が、前記組成物の全体重量を基準として、2.5〜9重量%の範囲である、請求項13に記載の印刷可能な組成物。
- 前記架橋剤が、Cymel 300、301、303、350、370、380、1116、1130、Powderlink 1174、Cymel 1123、1125、及びそれらの組合せからなる群から選択される、請求項12に記載の印刷可能な組成物。
- 前記組成物の全体重量を基準として、0〜6重量%の範囲の酸発生剤をさらに含む、請求項1に記載の印刷可能な組成物。
- 前記酸発生剤が、前記組成物の全体重量を基準として、0〜4重量%の範囲である、請求項16に記載の印刷可能な組成物。
- 前記酸発生剤が、前記組成物の全体重量を基準として、0〜3重量%の範囲である、請求項17に記載の印刷可能な組成物。
- 染料、可塑剤、柔軟剤、表面均展剤、表面湿潤剤、ナノ粒子、ナノコンポジット材料、及びそれらの組合せからなる群から選択される付加的成分をさらに含む、請求項1に記載の印刷可能な組成物。
- 基板上に印刷パターンを生成する方法であって、
(1)請求項1に記載の印刷可能な組成物を、圧電印刷デバイスを用いて基板に塗布するステップ、
(2)該塗布した組成物を乾燥するステップ、及び
(3)所望により、該乾燥した組成物を硬化して基板上に印刷パターンを生成するステップ、
を含む方法。 - 前記乾燥ステップが、熱の存在下で行われる、請求項20に記載の方法。
- 前記の所望による硬化ステップが、フォトトリミングを含む、請求項20に記載の方法。
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PCT/US2008/010899 WO2009038766A1 (en) | 2007-09-21 | 2008-09-19 | Compositions and processes for manufacturing printed electronics |
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WO2012138139A2 (ko) * | 2011-04-05 | 2012-10-11 | 주식회사 엘지화학 | 인쇄 조성물 및 이를 이용한 인쇄 방법 |
WO2012176793A1 (ja) * | 2011-06-24 | 2012-12-27 | 富士フイルム株式会社 | パターン形成方法、パターン形成システム、及びパターン構造体製造方法 |
JP2019515975A (ja) * | 2016-04-01 | 2019-06-13 | エルジー・ケム・リミテッド | インク組成物、これで製造された硬化パターン、これを含む発熱体およびその製造方法 |
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US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
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Also Published As
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AU2008302753A1 (en) | 2009-03-26 |
TWI503382B (zh) | 2015-10-11 |
CA2699920A1 (en) | 2009-03-26 |
WO2009038766A1 (en) | 2009-03-26 |
EP2191478A1 (en) | 2010-06-02 |
KR101477998B1 (ko) | 2014-12-31 |
KR20100074203A (ko) | 2010-07-01 |
JP5441907B2 (ja) | 2014-03-12 |
US8313173B2 (en) | 2012-11-20 |
US8313571B2 (en) | 2012-11-20 |
SG184762A1 (en) | 2012-10-30 |
AU2008302753B2 (en) | 2013-09-12 |
US20110267409A1 (en) | 2011-11-03 |
TW200923030A (en) | 2009-06-01 |
US20090081379A1 (en) | 2009-03-26 |
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