JP2010530474A5 - - Google Patents

Download PDF

Info

Publication number
JP2010530474A5
JP2010530474A5 JP2009553506A JP2009553506A JP2010530474A5 JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5 JP 2009553506 A JP2009553506 A JP 2009553506A JP 2009553506 A JP2009553506 A JP 2009553506A JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5
Authority
JP
Japan
Prior art keywords
group
iii
thin film
precursor
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009553506A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010530474A (ja
Filing date
Publication date
Priority claimed from KR1020070024682A external-priority patent/KR100857227B1/ko
Application filed filed Critical
Publication of JP2010530474A publication Critical patent/JP2010530474A/ja
Publication of JP2010530474A5 publication Critical patent/JP2010530474A5/ja
Ceased legal-status Critical Current

Links

JP2009553506A 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法 Ceased JP2010530474A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070024682A KR100857227B1 (ko) 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법
PCT/KR2008/001041 WO2008111738A1 (en) 2007-03-13 2008-02-22 Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

Publications (2)

Publication Number Publication Date
JP2010530474A JP2010530474A (ja) 2010-09-09
JP2010530474A5 true JP2010530474A5 (https=) 2010-10-21

Family

ID=39759657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009553506A Ceased JP2010530474A (ja) 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法

Country Status (6)

Country Link
US (1) US20100098856A1 (https=)
EP (1) EP2126964A1 (https=)
JP (1) JP2010530474A (https=)
KR (1) KR100857227B1 (https=)
CN (1) CN101632154B (https=)
WO (1) WO2008111738A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982475B1 (ko) * 2008-09-29 2010-09-15 주식회사 쎄믹스 광 흡수용 화합물 박막 제조방법
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
KR101071545B1 (ko) * 2008-12-30 2011-10-11 주식회사 메카로닉스 Ｃｉｇｓ 박막 제조방법
US20120319244A1 (en) * 2010-01-29 2012-12-20 Kyocera Corporation Method for manufacturing semiconductor layer, method for manufacturing photoelectric conversion device, and semiconductor layer forming solution
CN102634776B (zh) * 2012-05-03 2014-03-12 徐明生 一种连续制备二维纳米薄膜的化学气相沉积设备
CN108541349B (zh) * 2016-01-13 2021-06-22 马卡罗能源有限公司 包括cigs光吸收层的太阳能电池及其制造方法
JP6842035B2 (ja) * 2016-12-19 2021-03-17 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法
JP7070826B2 (ja) * 2017-02-28 2022-05-18 国立大学法人東海国立大学機構 半導体ナノ粒子およびその製造方法ならびに発光デバイス
WO2018159699A1 (ja) * 2017-02-28 2018-09-07 国立大学法人名古屋大学 半導体ナノ粒子およびその製造方法ならびに発光デバイス
US20200082995A1 (en) * 2018-09-06 2020-03-12 Ascent Solar Technologies, Inc. Chalcopyrite-perovskite pn-junction thin-film photovoltaic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144014A (ja) * 1998-11-06 2000-05-26 Asahi Chem Ind Co Ltd 化合物半導体薄膜の形成方法
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
KR100495924B1 (ko) * 2003-07-26 2005-06-16 (주)인솔라텍 태양전지 흡수층의 제조 방법
EP1649520A4 (en) * 2003-07-26 2009-03-11 In Solar Tech Co Ltd PROCESS FOR PREPARING ABSORBENT LAYERS FOR A SOLAR CELL
KR100495925B1 (ko) * 2005-01-12 2005-06-17 (주)인솔라텍 태양전지용 광흡수층 및 그 제조 방법
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법

Similar Documents

Publication Publication Date Title
JP2010530474A5 (https=)
JP6456971B2 (ja) 気相の前駆体を用いて有機金属構造体薄膜を製造する方法
WO2011044046A3 (en) Improved multichamber split processes for led manufacturing
TW200940738A (en) Method for forming a titanium-containing layer on a substrate using an ALD process
JP2008502680A5 (https=)
ATE521728T1 (de) Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten
TW200702476A (en) Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
CN109661481A (zh) 使用MoOC14的CVD Mo沉积
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
JP2009522197A5 (https=)
TW200700425A (en) Processes for the production of organometallic compounds
KR101201190B1 (ko) Ｃｖｄ용 원료화합물 및 루테늄 또는 루테늄 화합물박막의 화학기상 증착방법
WO2010055423A8 (en) Tellurium precursors for film deposition
EP1887012A3 (en) Organometallic compounds for chemical vapour deposition and atomic layer deposition of thin films
KR102720328B1 (ko) 금속 필름의 생성을 위한 방법
WO2010057652A8 (de) Nonodrähte auf substratoberflächen, verfahren zu deren herstellung sowie deren verwendung
Avila et al. Atomic layer deposition of Cu (I) oxide films using Cu (II) bis (dimethylamino-2-propoxide) and water
WO2006044446A3 (en) Organometallic compounds and processes for preparation thereof
TW200615396A (en) Method of depositing lead containing oxides films
Szłyk et al. AuI and AgI complexes with tertiary phosphines and perfluorinated carboxylates as precursors for CVD of gold and silver
JP2006241137A (ja) 揮発性金属β−ケトイミナート錯体
WO2005033001A3 (en) Methods for preparation of one-dimensional carbon nanostructures
US20100119406A1 (en) Allyl-containing precursors for the deposition of metal-containing films
JP2004235632A5 (https=)
WO2004024980A1 (ja) Ｃｖｄ原料用の有機化合物及び該有機化合物を用いた金属又は金属化合物薄膜の製造方法