JP2010524822A - プラズマエッチチャンバで使用される耐食性を強化した石英 - Google Patents
プラズマエッチチャンバで使用される耐食性を強化した石英 Download PDFInfo
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- JP2010524822A JP2010524822A JP2010504207A JP2010504207A JP2010524822A JP 2010524822 A JP2010524822 A JP 2010524822A JP 2010504207 A JP2010504207 A JP 2010504207A JP 2010504207 A JP2010504207 A JP 2010504207A JP 2010524822 A JP2010524822 A JP 2010524822A
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- yttrium
- quartz
- aluminum
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 239000010453 quartz Substances 0.000 title claims abstract description 106
- 230000007797 corrosion Effects 0.000 title description 9
- 238000005260 corrosion Methods 0.000 title description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 47
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 48
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 34
- 239000002019 doping agent Substances 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000946 Y alloy Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 description 39
- 239000007789 gas Substances 0.000 description 37
- 210000002381 plasma Anatomy 0.000 description 29
- 238000009826 distribution Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 shields Chemical compound 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
本発明の実施形態は概して、耐プラズマ性チャンバコンポーネント及びその製造方法に関する。
半導体処理には、基板上に微細な集積回路を形成するための多種多様な化学的及び物理的処理が含まれる。集積回路を構成する材料層は、化学気相蒸着、物理気相蒸着等の多数のプラズマ処理により形成される。材料層の一部は、フォトレジストマスクとウェット又はドライプラズマエッチング技法を用いてパターン形成される。集積回路の形成に利用する基板は、シリコン、ガリウム砒素、リン化インジウム、ガラス又はその他の適切な材料であってもよい。
Claims (15)
- 基板を支持するように構成されたイットリウムをドープした石英リングを備える、プラズマチャンバで使用のドープ石英コンポーネント。
- イットリウムドーパントの量が5重量%未満である、請求項1記載のドープ石英コンポーネント。
- イットリウムドーパントが、イットリウム金属、イットリウム合金又は酸化イットリウムの少なくとも1つである、請求項2記載のドープ石英コンポーネント。
- 石英リングがアルミニウム含有ドーパントを更に含む、請求項1記載のドープ石英コンポーネント。
- アルミニウム含有ドーパントが、アルミニウム金属、アルミニウム合金、酸化アルミニウム又は窒化アルミニウムの少なくとも1つであり、アルミニウム含有ドーパントの量が5重量%未満である、請求項4記載のドープ石英コンポーネント。
- 石英リングが窒素含有ドーパントを更に含む、請求項1記載のドープ石英コンポーネント。
- 窒素含有ドーパントを熱処理工程により適用し、窒素ドーパントの量が約10ppm(重量)〜約150ppm(重量)である、請求項6記載のドープ石英コンポーネント。
- 石英コンポーネントが、外周と、内周と、基板を受けるように構成された、内周に隣接した凹部とを有する、請求項1記載のドープ石英コンポーネント。
- 石英コンポーネントが、外方領域と、内方領域と、外方領域に形成された凹部とを有する、請求項1記載のドープ石英コンポーネント。
- 基板支持台座部を取り囲むように構成された環状体を有し且つ腐食性のプラズマ環境への曝露に適した材料を含む石英リングを備え、石英リングは、イットリウムドーパントとアルミニウムドーパントをそれぞれ約5重量%未満含む、プラズマチャンバで使用のドープ石英コンポーネント。
- 石英リングが窒素ドーパントを更に含み、窒素ドーパントの量が約10ppm(重量)〜約150ppm(重量)である、請求項10記載のドープ石英コンポーネント。
- イットリウムドーパントが、イットリウム金属、イットリウム合金及び酸化イットリウムの少なくとも1つである又はアルミニウムドーパントが、アルミニウム金属、アルミニウム合金、酸化アルミニウム及び窒化アルミニウムの少なくとも1つである、請求項10記載のドープ石英コンポーネント。
- 内部容積を有するチャンバ本体と、
チャンバ本体内に配置され且つその上に基板を受けるように構成された支持台座部と、
内部容積に露出した少なくとも1つの表面を有する、耐プラズマ性のイットリウムをドープした石英コンポーネントとを備えるプラズマ処理チャンバ。 - 石英コンポーネントがアルミニウムを更に含み、イットリウムとアルミニウムを含有する石英コンポーネントが、その上に位置決めされた基板を受けるように構成された凹部を有するカバーリングであり、イットリウムとアルミニウムを含有する石英コンポーネントが、カバーリングと係合するように構成された凹部を有する絶縁リングである、請求項13記載のチャンバ。
- 石英材料をイットリウム含有材料に混ぜ込んで混合物を生成し、
混合物を加熱し、
イットリウム含有石英コンポーネントを形成し、イットリウム含有石英コンポーネントは、その上で基板を支持するように寸法設計された環状体を有しており、
窒素ガスの存在下においてイットリウム含有石英コンポーネントを熱処理し、
イットリウムと窒素を含有する石英コンポーネントを形成することを含む、イットリウム含有石英コンポーネントの製造方法。
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PCT/US2008/060436 WO2008130975A1 (en) | 2007-04-20 | 2008-04-16 | Erosion resistance enhanced quartz used in plasma etch chamber |
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US7718559B2 (en) | 2010-05-18 |
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