JP2010522991A5 - - Google Patents

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Publication number
JP2010522991A5
JP2010522991A5 JP2010500999A JP2010500999A JP2010522991A5 JP 2010522991 A5 JP2010522991 A5 JP 2010522991A5 JP 2010500999 A JP2010500999 A JP 2010500999A JP 2010500999 A JP2010500999 A JP 2010500999A JP 2010522991 A5 JP2010522991 A5 JP 2010522991A5
Authority
JP
Japan
Prior art keywords
memory cell
level
conductor
carbon nanotube
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010500999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010522991A (ja
Filing date
Publication date
Priority claimed from US11/692,148 external-priority patent/US7982209B2/en
Priority claimed from US11/692,144 external-priority patent/US7667999B2/en
Application filed filed Critical
Priority claimed from PCT/US2008/004018 external-priority patent/WO2008118486A1/en
Publication of JP2010522991A publication Critical patent/JP2010522991A/ja
Publication of JP2010522991A5 publication Critical patent/JP2010522991A5/ja
Pending legal-status Critical Current

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JP2010500999A 2007-03-27 2008-03-26 カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法 Pending JP2010522991A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/692,148 US7982209B2 (en) 2007-03-27 2007-03-27 Memory cell comprising a carbon nanotube fabric element and a steering element
US11/692,144 US7667999B2 (en) 2007-03-27 2007-03-27 Method to program a memory cell comprising a carbon nanotube fabric and a steering element
PCT/US2008/004018 WO2008118486A1 (en) 2007-03-27 2008-03-26 Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same

Publications (2)

Publication Number Publication Date
JP2010522991A JP2010522991A (ja) 2010-07-08
JP2010522991A5 true JP2010522991A5 (zh) 2011-04-21

Family

ID=39590778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010500999A Pending JP2010522991A (ja) 2007-03-27 2008-03-26 カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法

Country Status (6)

Country Link
EP (1) EP2140492A1 (zh)
JP (1) JP2010522991A (zh)
KR (1) KR20100014547A (zh)
CN (1) CN101681921B (zh)
TW (1) TW200903782A (zh)
WO (1) WO2008118486A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100655078B1 (ko) * 2005-09-16 2006-12-08 삼성전자주식회사 비트 레지스터링 레이어를 갖는 반도체 메모리 장치 및그의 구동 방법
US8294098B2 (en) 2007-03-30 2012-10-23 Tsinghua University Transmission electron microscope micro-grid
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US20100032639A1 (en) 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
CN102265400A (zh) * 2008-10-23 2011-11-30 桑迪士克3D有限责任公司 展示减少的分层的基于碳的存储器元件和形成其的方法
KR20100052080A (ko) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
JP2010123646A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 電気素子、スイッチング素子、メモリ素子、スイッチング方法及びメモリ方法
US8114765B2 (en) 2008-12-31 2012-02-14 Sandisk 3D Llc Methods for increased array feature density
US8084347B2 (en) * 2008-12-31 2011-12-27 Sandisk 3D Llc Resist feature and removable spacer pitch doubling patterning method for pillar structures
US8023310B2 (en) * 2009-01-14 2011-09-20 Sandisk 3D Llc Nonvolatile memory cell including carbon storage element formed on a silicide layer
JP4829320B2 (ja) * 2009-03-17 2011-12-07 株式会社東芝 不揮発性半導体記憶装置の製造方法
CN101848564B (zh) 2009-03-27 2012-06-20 清华大学 加热器件
US7955981B2 (en) * 2009-06-30 2011-06-07 Sandisk 3D Llc Method of making a two-terminal non-volatile memory pillar device with rounded corner
CN101991364B (zh) 2009-08-14 2013-08-28 清华大学 电烤箱
CN101998706B (zh) 2009-08-14 2015-07-01 清华大学 碳纳米管织物及应用该碳纳米管织物的发热体
IN2012DN01961A (zh) 2009-08-17 2015-08-21 Intellikine Llc
CN102019039B (zh) 2009-09-11 2013-08-21 清华大学 红外理疗设备
JP5611574B2 (ja) 2009-11-30 2014-10-22 株式会社東芝 抵抗変化メモリ及びその製造方法
WO2011149937A1 (en) 2010-05-24 2011-12-01 Intellikine, Inc. Heterocyclic compounds and uses thereof
JP5808826B2 (ja) 2011-02-23 2015-11-10 インテリカイン， エルエルシー 複素環化合物およびその使用
CN104613620B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器及其出风控制方法
CN104613545B (zh) * 2015-02-02 2017-05-10 广东美的制冷设备有限公司 空调器室内机及空调器的出风控制方法
US10580778B2 (en) * 2018-07-18 2020-03-03 Nanya Technology Corporation Dynamic random access memory structure and method for preparing the same
US11502105B2 (en) * 2021-04-06 2022-11-15 Macronix International Co., Ltd. Semiconductor structure and a method for manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
CN1849718A (zh) * 2003-07-09 2006-10-18 先进微装置公司 存储器件和使用及制造该器件的方法
JP4448356B2 (ja) * 2004-03-26 2010-04-07 富士通株式会社 半導体装置およびその製造方法
JP2005343744A (ja) * 2004-06-03 2005-12-15 Matsushita Electric Ind Co Ltd カーボンナノチューブ半導体の製造方法およびカーボンナノチューブ構造体
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20060273298A1 (en) * 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
JP4975289B2 (ja) * 2005-09-06 2012-07-11 国立大学法人名古屋大学 カーボンナノウォールを用いた電子素子
JP5410974B2 (ja) * 2006-08-08 2014-02-05 ナンテロ，インク． 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法

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