JP2010518583A5 - - Google Patents

Download PDF

Info

Publication number
JP2010518583A5
JP2010518583A5 JP2009549224A JP2009549224A JP2010518583A5 JP 2010518583 A5 JP2010518583 A5 JP 2010518583A5 JP 2009549224 A JP2009549224 A JP 2009549224A JP 2009549224 A JP2009549224 A JP 2009549224A JP 2010518583 A5 JP2010518583 A5 JP 2010518583A5
Authority
JP
Japan
Prior art keywords
sample
gas
chamber
optical device
sample chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009549224A
Other languages
English (en)
Japanese (ja)
Other versions
JP5758577B2 (ja
JP2010518583A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/053223 external-priority patent/WO2008098084A1/en
Publication of JP2010518583A publication Critical patent/JP2010518583A/ja
Publication of JP2010518583A5 publication Critical patent/JP2010518583A5/ja
Application granted granted Critical
Publication of JP5758577B2 publication Critical patent/JP5758577B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009549224A 2007-02-06 2008-02-06 高圧荷電粒子ビーム・システム Expired - Fee Related JP5758577B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90002807P 2007-02-06 2007-02-06
US60/900,028 2007-02-06
PCT/US2008/053223 WO2008098084A1 (en) 2007-02-06 2008-02-06 High pressure charged particle beam system

Publications (3)

Publication Number Publication Date
JP2010518583A JP2010518583A (ja) 2010-05-27
JP2010518583A5 true JP2010518583A5 (enExample) 2010-07-08
JP5758577B2 JP5758577B2 (ja) 2015-08-05

Family

ID=39682104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009549224A Expired - Fee Related JP5758577B2 (ja) 2007-02-06 2008-02-06 高圧荷電粒子ビーム・システム

Country Status (4)

Country Link
US (1) US8921811B2 (enExample)
EP (1) EP2109873B1 (enExample)
JP (1) JP5758577B2 (enExample)
WO (1) WO2008098084A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2109873B1 (en) 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
EP2105944A1 (en) * 2008-03-28 2009-09-30 FEI Company Environmental cell for a particle-optical apparatus
US7791020B2 (en) 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
US8299432B2 (en) 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
DE102010003056B9 (de) * 2010-03-19 2014-07-31 Carl Zeiss Microscopy Gmbh Verfahren zur Erzeugung von Bildern einer Probe
JP2011258451A (ja) * 2010-06-10 2011-12-22 Hitachi High-Technologies Corp 走査電子顕微鏡
US8178851B2 (en) * 2010-07-30 2012-05-15 E.A. Fischione Instruments, Inc. In situ holder assembly
US9679741B2 (en) * 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US8853078B2 (en) * 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
EP2631929A1 (en) 2012-02-27 2013-08-28 FEI Company A holder assembly for cooperating with an environmental cell and an electron microscope
EP2880675A4 (en) 2012-07-30 2016-03-30 Fei Co ELECTRONIC MICROSCOPE GAS INJECTION SYSTEM WITH ENVIRONMENTAL SCAN (SEM)
WO2014167919A1 (ja) * 2013-04-12 2014-10-16 株式会社 日立ハイテクノロジーズ 荷電粒子線装置およびフィルタ部材
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
DE112014002868B4 (de) * 2013-07-29 2019-02-28 Hitachi High-Technologies Corporation lonenätzvorrichtung und Bearbeitungsverfahren unter Verwendung der lonenätzvorrichtung
US9478390B2 (en) * 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US20170247785A1 (en) * 2014-10-13 2017-08-31 Washington State University Reactive deposition systems and associated methods
US9659768B2 (en) * 2014-12-23 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Focused radiation beam induced thin film deposition
US9842724B2 (en) * 2015-02-03 2017-12-12 Kla-Tencor Corporation Method and system for imaging of a photomask through a pellicle
US9799490B2 (en) 2015-03-31 2017-10-24 Fei Company Charged particle beam processing using process gas and cooled surface
US9633816B2 (en) * 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
US10522330B2 (en) 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
US9583307B2 (en) * 2015-07-01 2017-02-28 Applied Materials Israel Ltd. System and method for controlling specimen outgassing
JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US9915866B2 (en) 2015-11-16 2018-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focused radiation beam induced deposition
EP3176808B1 (en) * 2015-12-03 2019-10-16 Carl Zeiss Microscopy Ltd. Method for detecting charged particles and particle beam device for carrying out the method
CN106783493B (zh) * 2016-12-01 2018-07-10 聚束科技(北京)有限公司 一种真空气氛处理装置、样品观测系统及方法
US11380438B2 (en) 2017-09-27 2022-07-05 Honeywell International Inc. Respiration-vocalization data collection system for air quality determination
WO2020141091A2 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Apparatus for obtaining optical measurements in a charged particle apparatus
US10876949B2 (en) 2019-04-26 2020-12-29 Honeywell International Inc. Flow device and associated method and system
US10794810B1 (en) 2019-08-02 2020-10-06 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11221288B2 (en) 2020-01-21 2022-01-11 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11391613B2 (en) * 2020-02-14 2022-07-19 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11181456B2 (en) 2020-02-14 2021-11-23 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11333593B2 (en) 2020-02-14 2022-05-17 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
US12111257B2 (en) 2020-08-26 2024-10-08 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11835432B2 (en) 2020-10-26 2023-12-05 Honeywell International Inc. Fluid composition sensor device and method of using the same
US12281976B2 (en) 2021-05-13 2025-04-22 Honeywell International Inc. In situ fluid sampling device and method of using the same
DE102022208597A1 (de) 2022-08-18 2024-02-29 Carl Zeiss Microscopy Gmbh Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2819165A1 (de) * 1978-05-02 1979-11-15 Siemens Ag Rasterelektronenmikroskop
US4605566A (en) * 1983-08-22 1986-08-12 Nec Corporation Method for forming thin films by absorption
JPH0244445Y2 (enExample) * 1985-03-15 1990-11-26
JPS621358A (ja) 1985-06-27 1987-01-07 Toshiba Corp 画像形成装置
GB8604004D0 (en) * 1986-02-18 1986-03-26 Cambridge Instr Ltd Specimen chamber
CA1304069C (en) 1986-08-25 1992-06-23 Johannes C. Oudejans Hydrogenation catalyst
JPS6365952U (enExample) * 1986-10-17 1988-04-30
US5250808A (en) * 1987-05-21 1993-10-05 Electroscan Corporation Integrated electron optical/differential pumping/imaging signal system for an environmental scanning electron microscope
US4823006A (en) * 1987-05-21 1989-04-18 Electroscan Corporation Integrated electron optical/differential pumping/imaging signal detection system for an environmental scanning electron microscope
US4897545A (en) * 1987-05-21 1990-01-30 Electroscan Corporation Electron detector for use in a gaseous environment
US4785182A (en) * 1987-05-21 1988-11-15 Electroscan Corporation Secondary electron detector for use in a gaseous atmosphere
JPH03273134A (ja) * 1990-03-23 1991-12-04 Shimadzu Corp 走査型電子顕微鏡付き材料試験機
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5397956A (en) * 1992-01-13 1995-03-14 Tokyo Electron Limited Electron beam excited plasma system
KR960012334B1 (ko) * 1992-03-31 1996-09-18 가부시끼가이샤 히다찌세이사꾸쇼 하전빔과 반응성가스를 사용해서 시료를 처리하는 방법 및 장치
US5378898A (en) * 1992-09-08 1995-01-03 Zapit Technology, Inc. Electron beam system
JPH0719554B2 (ja) * 1993-03-25 1995-03-06 工業技術院長 荷電ビーム装置
US5446282A (en) 1993-04-05 1995-08-29 Nikon Corporation Scanning photoelectron microscope
US5412211A (en) * 1993-07-30 1995-05-02 Electroscan Corporation Environmental scanning electron microscope
US5362964A (en) * 1993-07-30 1994-11-08 Electroscan Corporation Environmental scanning electron microscope
US5440124A (en) * 1994-07-08 1995-08-08 Wisconsin Alumni Research Foundation High mass resolution local-electrode atom probe
US6025592A (en) * 1995-08-11 2000-02-15 Philips Electronics North America High temperature specimen stage and detector for an environmental scanning electron microscope
US5828064A (en) * 1995-08-11 1998-10-27 Philips Electronics North America Corporation Field emission environmental scanning electron microscope
JPH0963527A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp コンタミネーション低減装置
GB9623768D0 (en) * 1996-11-15 1997-01-08 Leo Electron Microscopy Limite Scanning electron microscope
JPH10172487A (ja) * 1996-12-13 1998-06-26 Nikon Corp 試料加熱装置
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US5945672A (en) * 1998-01-29 1999-08-31 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
US6440615B1 (en) * 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
EP1122761B1 (en) * 2000-02-01 2004-05-26 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Optical column for charged particle beam device
EP2365512A3 (en) * 2000-06-27 2012-01-04 Ebara Corporation Inspection system by charged particle beam
AUPQ932200A0 (en) * 2000-08-11 2000-08-31 Danilatos, Gerasimos Daniel Environmental scanning electron microscope
EP1339100A1 (en) 2000-12-01 2003-08-27 Ebara Corporation Inspection method and apparatus using electron beam, and device production method using it
WO2002070142A1 (en) 2000-12-06 2002-09-12 Angstron Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
JP3926103B2 (ja) * 2001-01-15 2007-06-06 日本電子株式会社 冷却ホルダ並びに走査電子顕微鏡
JP2002289129A (ja) * 2001-03-26 2002-10-04 Jeol Ltd 低真空走査電子顕微鏡
EP1419418A4 (en) * 2001-07-27 2006-11-29 Fei Co ELECTRON BEAM PROCESSING
JP3723846B2 (ja) * 2002-04-15 2005-12-07 独立行政法人産業技術総合研究所 電子ビーム装置
US7391036B2 (en) 2002-04-17 2008-06-24 Ebara Corporation Sample surface inspection apparatus and method
EP2372743B1 (en) * 2002-09-18 2016-03-23 FEI Company Charged particle beam system with an ion generator
US6979822B1 (en) * 2002-09-18 2005-12-27 Fei Company Charged particle beam system
US6674076B1 (en) * 2002-12-12 2004-01-06 Ballard Power Systems Inc. Humidified imaging with an environmental scanning electron microscope
GB0300474D0 (en) 2003-01-09 2003-02-12 Univ Cambridge Tech Detector for enviromental scanning electron microscope
US6897443B2 (en) 2003-06-02 2005-05-24 Harald Gross Portable scanning electron microscope
KR100974778B1 (ko) 2003-06-30 2010-08-06 삼성전자주식회사 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법
WO2005037516A2 (en) * 2003-10-15 2005-04-28 Michigan State University Biocomposites sheet molding and methods of making those
JP2005174591A (ja) * 2003-12-08 2005-06-30 Horon:Kk 荷電粒子線装置および荷電粒子線像生成方法
JP2005190864A (ja) * 2003-12-26 2005-07-14 Hitachi High-Technologies Corp 電子線装置及び電子線装置用試料ホルダー
NL1026547C2 (nl) * 2004-07-01 2006-01-03 Fei Co Apparaat voor het evacueren van een sample.
JP4262158B2 (ja) * 2004-07-13 2009-05-13 株式会社日立ハイテクサイエンスシステムズ 低真空走査電子顕微鏡
US7304302B1 (en) * 2004-08-27 2007-12-04 Kla-Tencor Technologies Corp. Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis
JP4434901B2 (ja) * 2004-09-28 2010-03-17 京セラ株式会社 試料搬送装置
JP4895569B2 (ja) 2005-01-26 2012-03-14 株式会社日立ハイテクノロジーズ 帯電制御装置及び帯電制御装置を備えた計測装置
JP4636897B2 (ja) 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
TW200639901A (en) * 2005-05-09 2006-11-16 Li Bing Huan Device for operating gas in vacuum or low-pressure environment and for observation of the operation
EP1724809A1 (en) 2005-05-18 2006-11-22 FEI Company Particle-optical apparatus for the irradiation of a sample
JP4627682B2 (ja) * 2005-05-27 2011-02-09 株式会社日立ハイテクノロジーズ 試料作製装置および方法
EP1816668A2 (en) * 2006-02-01 2007-08-08 FEI Company Particle-optical apparatus with a predetermined final vacuum pressure
JP5227512B2 (ja) 2006-12-27 2013-07-03 株式会社日立ハイテクノロジーズ 電子線応用装置
EP1956633A3 (en) 2007-02-06 2009-12-16 FEI Company Particle-optical apparatus for simultaneous observing a sample with particles and photons
EP2109873B1 (en) 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
EP2006881A3 (en) * 2007-06-18 2010-01-06 FEI Company In-chamber electron detector
DE102007054074A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
US20110006205A1 (en) 2009-07-12 2011-01-13 Raymond Browning Ambient pressure photoelectron microscope

Similar Documents

Publication Publication Date Title
JP2010518583A5 (enExample)
JP5758577B2 (ja) 高圧荷電粒子ビーム・システム
US20050016679A1 (en) Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
US20130255717A1 (en) System and method for cleaning surfaces and components of mask and wafer inspection systems based on the positive column of a glow discharge plasma
WO2017127182A1 (en) System, method and apparatus for target material debris cleaning of euv vessel and euv collector
TWI726863B (zh) 非熱軟式電漿清潔技術
JP2012084925A (ja) プラズマの機械的閉じ込めのための磁気による改善
US12111110B2 (en) Heat exchanger with multistaged cooling
CN105874097A (zh) 电子束蒸发源及真空蒸镀装置
US11533801B2 (en) Atmospheric pressure linear rf plasma source for surface modification and treatment
WO2013111485A1 (ja) 質量分析装置
JP5424972B2 (ja) 真空蒸着装置
CN105824041A (zh) 光学分光分析装置
JP6885510B2 (ja) スキマーコーン及び誘導結合プラズマ質量分析装置
CN103733296B (zh) 离子束装置
JP5794907B2 (ja) スパッタリング装置とスパッタリング方法
JP6145162B2 (ja) イオンビーム処理装置、電極アセンブリ及び電極アセンブリの洗浄方法
TWI728187B (zh) 差異原位清潔用的工件加工裝置
US10678149B2 (en) Method and apparatus for maintaining the surface of a reticle free of particles
CN100454495C (zh) 半导体制造装置
JP2008053116A (ja) イオンガン、及び成膜装置
CN108172490B (zh) 多用途灯丝气体离子源装置
JP3211579U (ja) 陰極アークプラズマ蒸着システム内で使用するアークイオン蒸発器のフィルタ装置
US20100098600A1 (en) Plasma system
JP3958878B2 (ja) 真空成膜装置