JP2010518583A5 - - Google Patents

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JP2010518583A5
JP2010518583A5 JP2009549224A JP2009549224A JP2010518583A5 JP 2010518583 A5 JP2010518583 A5 JP 2010518583A5 JP 2009549224 A JP2009549224 A JP 2009549224A JP 2009549224 A JP2009549224 A JP 2009549224A JP 2010518583 A5 JP2010518583 A5 JP 2010518583A5
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sample chamber
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Claims (30)

サンプルチャンバと、
荷電粒子源と、
前記荷電粒子源からサンプルに向かって荷電粒子を誘導する荷電粒子ビーム集束カラムと、
前記サンプルチャンバ内にあってサンプルを収容するサンプル小室であり、前記サンプルチャンバ内のガス圧とは異なるガス圧を維持するように十分に囲われたサンプル小室と、
ガスの供給源に前記サンプル小室を接続するガス注入口と、
前記荷電粒子源と前記サンプルとの間に配置され、前記サンプルにおける圧力より低い圧力を前記荷電粒子ビーム集束カラム内において維持する少なくとも１つの圧力制限開口と
を備える粒子−光学装置。 A sample chamber;
A charged particle source;
A charged particle beam focusing column for directing charged particles from the charged particle source toward the sample;
A sample chamber in the sample chamber for containing a sample, the sample chamber sufficiently enclosed to maintain a gas pressure different from the gas pressure in the sample chamber;
A gas inlet for connecting the sample chamber to a source of gas,
Said charged is arranged between the particle source to the sample, particles and at least one pressure limiting aperture to maintain the pressure lower than the pressure the charged particle beam focusing column in said sample - optical device. サンプルステージから離して配置され、前記サンプルから放出された電子を検出する検出器をさらに備え、
前記サンプルから放出された前記電子が電子電流を含み、前記電子電流が、ガスのイオン化カスケードによって増幅されて、前記サンプルの像を形成する増幅された画像化信号を生成する、請求項１に記載の粒子−光学装置。 Further comprising a detector disposed away from the sample stage and detecting electrons emitted from the sample ;
Wherein said electron electron current emitted from the sample, the electron current is amplified by ionization cascade of gas to produce an amplified image signal to form an image of the sample, according to claim 1 particle - optical device. 前記ガス注入口が、Ｈ2Ｏ、Ｎ2または空気以外の分子の供給源に前記サンプル小室を接続するガス注入口を備える、請求項１または２に記載の粒子−光学装置。 The gas inlet is, H 2 O, comprising a gas inlet for connecting the sample chamber to a source of a molecule other than N 2 or air, particles of claim 1 or 2 - the optical device. ガスの供給源に前記サンプル小室を接続する前記ガス注入口が、有機化合物、金属有機化合物、有機金属化合物、有機ハロゲン化合物、芳香族化合物、アミンまたはオルガノシランを含むガス分子の供給源に前記サンプル小室を接続するガス注入口を含む、請求項１〜３のいずれかに記載の粒子−光学装置。   The gas inlet connecting the sample chamber to a gas source is the sample to a gas molecule source comprising an organic compound, a metal organic compound, an organometallic compound, an organic halogen compound, an aromatic compound, an amine or an organosilane The particle-optical device according to claim 1, comprising a gas inlet for connecting the small chambers. ガスの供給源に前記サンプル小室を接続する前記ガス注入口が、ホスフィン、ハロゲン化物、塩化物、フッ化物、金属ハロゲン化物、金属塩化物、金属フッ化物、金属水素化物またはシランを含むガス分子の供給源に前記サンプル小室を接続するガス注入口を含む、請求項１〜４のいずれかに記載の粒子−光学装置。   The gas inlet connecting the sample chamber to a gas source is a gas molecule comprising phosphine, halide, chloride, fluoride, metal halide, metal chloride, metal fluoride, metal hydride or silane. 5. A particle-optical device according to any one of claims 1 to 4, comprising a gas inlet connecting the sample chamber to a source. 前記サンプル小室圧力が１０ミリトール超である、請求項１〜５のいずれかに記載の粒子−光学装置。   6. A particle-optical device according to any preceding claim, wherein the sample chamber pressure is greater than 10 millitorr. 前記サンプルチャンバ圧力が１０ミリトール未満である、請求項６に記載の粒子−光学装置。   The particle-optical apparatus of claim 6, wherein the sample chamber pressure is less than 10 millitorr. 前記サンプル小室がガス排出口を含み、前記ガス排出口が前記ガス注入口とは別個であり、前記ガス排出口が、前記圧力制限開口および前記集束カラム以外を通る、請求項１〜７のいずれかに記載の粒子−光学装置。   The sample chamber includes a gas outlet, the gas outlet is separate from the gas inlet, and the gas outlet passes through other than the pressure limiting opening and the focusing column. A particle-optical device according to claim 1. 前記ガス注入口が、前記小室内へガスを導入する複数のガス注入口を含む、請求項１〜８のいずれかに記載の粒子−光学装置。 The gas inlet is said to small chamber comprising a plurality of gas inlet for introducing a gas, particles of any of claims 1-8 - optical device. 前記サンプル小室が耐食材料を含む、請求項１〜９のいずれかに記載の粒子−光学装置。 Wherein the sample chamber comprises a corrosion-resistant material, the particles according to any one of claims 1 to 9 - optical device. 微小構造内の要素を形成するため、ガスの供給源に前記サンプル小室を接続する前記ガス注入口が、荷電粒子ビームによって活性化されたときに、前記サンプル小室内のサンプルから材料をエッチングし、または前記サンプル小室内のサンプルに材料を付着させるガスの供給源に前記サンプル小室を接続するガス注入口を含む、請求項１〜１０のいずれかに記載の粒子−光学装置。 Etching the material from the sample in the sample chamber when the gas inlet connecting the sample chamber to a source of gas is activated by a charged particle beam to form an element in the microstructure; or a gas inlet for connecting the sample chamber to a source of gas to deposit material on the sample a small chamber of the sample, the particles according to any one of claims 1 to 10 - optical device. 前記サンプル小室内にあって、前記サンプルの位置を変化させる可動サンプルステージをさらに備える、請求項１〜１１のいずれかに記載の粒子−光学装置。 In the said sample a small chamber, further comprising a movable sample stage for changing the position of the sample, the particles according to any one of claims 1 to 12 - optical device. 前記サンプルチャンバの内側にあって、前記小室を１次ビームの軸と整列させる可動小室・ステージをさらに備える、請求項１〜１２のいずれかに記載の粒子−光学装置。 The sample was inside the chamber, further comprising a movable chamber stage to align with the axis of the chamber the primary beam, particles according to any one of claims 1 to 11 - optical device. 前記サンプルを前記サンプル小室内に保持する断熱されたサンプルステージを含む、請求項１〜１３のいずれかに記載の粒子−光学装置。 The sample containing the insulated sample stage for holding the sample small chamber, the particles according to any one of claims 1 to 14 - optical device. 前記サンプルを加熱する加熱器をさらに備える、請求項１〜１４のいずれかに記載の粒子−光学装置。 Further comprising a heater for heating the sample, the particles according to any one of claims 1-14 - optical device. 前記小室の壁を加熱するエネルギーの供給源をさらに備える、請求項１〜１５のいずれかに記載の粒子−光学装置。 Further comprising a source of energy for heating the walls of the chamber, particles according to any one of claims 1 to 16 - optical device. 前記サンプル小室が、前記サンプルを見るための光学的に透明な窓を含む、請求項１〜１６のいずれかに記載の粒子−光学装置。 17. A particle-optical device according to any of claims 1 to 16 , wherein the sample chamber includes an optically transparent window for viewing the sample. 前記検出器が、ガス・カスケード内の電荷の流れによって誘起された電気信号を検出する電極を備える、請求項１〜１７のいずれかに記載の粒子−光学装置。 18. A particle-optical device according to any one of the preceding claims, wherein the detector comprises an electrode for detecting an electrical signal induced by a charge flow in a gas cascade. 前記荷電粒子ビーム集束カラムが磁気レンズを含み、追加の衝突を発生させるため、前記磁気レンズが、電子の経路を前記ガス内に延ばす磁場を発生させる、請求項１〜１８のいずれかに記載の粒子−光学装置。 Wherein said charged particle beam focusing column is a magnetic lens, in order to generate additional collision, the magnetic lens, to generate a magnetic field to extend the electron path within said gas, according to any one of claims 1 to 18 Particle-optical device. 前記電子電流を増幅するため、前記検出器が、前記サンプルから少なくとも３ｍｍのところに配置された電極を含む、請求項１〜１９のいずれかに記載の粒子−光学装置。 20. A particle-optical device according to any of the preceding claims, wherein the detector comprises an electrode arranged at least 3 mm from the sample to amplify the electron current. 荷電粒子ビーム集束カラムと、少なくとも１つの圧力制限開口によって前記荷電粒子ビーム集束カラムから分離されたサンプル小室を含むサンプルチャンバとを提供することと、
前記サンプル小室に接続されたガス注入口を通して、第１のガスを、前記サンプル小室内のサンプルに搬送することと、
前記サンプル小室を、前記サンプルチャンバの圧力よりも高圧に維持することと、
前記サンプル小室を、前記荷電粒子ビーム集束カラム内の圧力よりも高圧に維持することと、
前記サンプルを処理するため、前記荷電粒子ビーム集束カラムおよび前記少なくとも１つの圧力制限開口を通して、荷電粒子のビームをサンプルに向かって誘導することと
を含む、粒子−光学装置を使用してサンプルを処理する方法。 Providing a charged particle beam focusing column and a sample chamber including a sample chamber separated from the charged particle beam focusing column by at least one pressure limiting aperture;
And be conveyed through the connected gas inlet into the sample chamber, the first gas, the sample small chamber of the sample,
And maintaining the sample chamber, the pressure higher than the pressure of the sample chamber,
Maintaining the sample chamber at a pressure higher than the pressure in the charged particle beam focusing column;
For processing the sample through the charged particle beam focusing column and the at least one pressure limiting aperture, it and the including inducing toward a beam of charged particles in the sample, the particle - the sample using an optical device How to handle. 前記荷電粒子のビームを前記サンプルに向かって誘導することによって所望の微小構造を製造することをさらに含み、
前記所望の微小構造を製造するため、前記荷電粒子のビームが、前記第１のガスを活性化させて、前記荷電粒子のビームの衝突位置の近くの前記サンプルから材料を局所的にエッチング、あるいは前記サンプルに材料を局所的に付着させる、請求項２１に記載の方法。 Further producing a desired microstructure by directing a beam of the charged particles towards the sample ;
In order to produce the desired microstructure , the charged particle beam activates the first gas to locally etch material from the sample near the impact position of the charged particle beam, or The method of claim 21, wherein material is locally attached to the sample . 前記サンプルから放出された２次電子と、前記２次電子とガス分子との衝突によって生成された電子とを含む電子電流を検出することをさらに含む、請求項２１または２２に記載の方法。 23. The method of claim 21 or 22 , further comprising detecting an electron current comprising secondary electrons emitted from the sample and electrons generated by collisions of the secondary electrons and gas molecules. 前記サンプルから放出された電子を、サンプルステージから離して配置された検出器を使用して検出することをさらに含み、
前記サンプルから放出された前記電子が電子電流を含み、前記電子電流が、ガス・イオン化カスケードによって増幅されて、前記サンプルの像を形成する増幅された画像化信号を生成する、請求項２１〜２３のいずれかに記載の方法。 Further comprising detecting electrons emitted from the sample using a detector positioned away from the sample stage ;
The electrons emitted from the sample includes an electronic current, the electron current is amplified by a gas ionization cascade to produce an amplified image signal to form an image of the sample, according to claim 21 to 23 The method in any one of . 前記サンプルチャンバ内の前記第１のガスが、前記圧力制限開口以外の、前記サンプル小室に接続されたガス排出口を通して、第１のガス排出流量で同時に除去される、請求項２１〜２４のいずれかに記載の方法。 25. Any one of claims 21 to 24 , wherein the first gas in the sample chamber is simultaneously removed at a first gas discharge flow rate through a gas discharge port connected to the sample chamber other than the pressure limiting opening. The method of crab. 前記サンプル小室から前記第１のガスを除去し、同時に前記サンプル小室に第２のガスを搬送することによって、前記第１のガスから前記第２のガスへ切り替えることをさらに含む、請求項２１〜２５のいずれかに記載の方法。 The sample removing the first gas from the chamber, by conveying a second gas to the sample chamber at the same time, further comprising switching from the first gas to the second gas, according to claim 21 to 26. The method according to any one of 25 . 前記サンプル小室に接続された第２の注入口を通して前記サンプル小室に第２のガスを搬送すること、
前記第１のガスを前記第２のガスに入れ替えるため、前記サンプルチャンバからガスを同時に除去すること、および
前記第２のガスを使用して前記サンプルを画像化するか、または処理するため、前記荷電粒子ビーム集束カラムおよび前記少なくとも１つの圧力制限開口を通して、荷電粒子のビームを前記サンプルに向かって誘導すること
をさらに含む、請求項２１〜２６のいずれかに記載の方法。 Conveying a second gas to the sample chamber through a second inlet connected to the sample chamber;
In order to replace the first gas to the second gas, said sample chamber at the same time to remove it gas from, and either imaged the sample using the second gas, or for processing, the through the charged particle beam focusing column and the at least one pressure limiting aperture further includes directing toward a beam of charged particles in the sample the method of any of claims 21 to 26. 前記第１のガスが、前記サンプルの表面に材料を付着させるか、または前記サンプルをエッチングする処理ガスであり、前記第２のガスが、前記サンプルを画像化する画像化ガスである、請求項２７に記載の方法。 Said first gas, said surface to adhere the material sample Luke, or a process gas for etching the sample, the second gas is an imaging gas to image the sample, wherein Item 28. The method according to Item 27 . 前記サンプル小室の表面温度を前記サンプルの表面温度よりも高く維持するため、サンプル小室の表面を加熱することをさらに含む、請求項２１〜２８のいずれかに記載の方法。 29. A method according to any of claims 21 to 28 , further comprising heating the surface of the sample chamber to maintain the surface temperature of the sample chamber above the surface temperature of the sample. 電子ビームが誘導される領域を越えて延びる領域において前記サンプルから材料をエッチングするか、または前記サンプルに材料を付着させるため、前駆体ガスの存在下で前記サンプルチャンバ内の前記サンプルを加熱することをさらに含む、請求項２１〜２９のいずれかに記載の方法。 Since in the region extending beyond the region where the electron beam is induced or to etch material from the sample, or to deposit material on the sample, heating the sample in the sample chamber in the presence of a precursor gas 30. The method of any of claims 21-29 , further comprising:
JP2009549224A 2007-02-06 2008-02-06 High pressure charged particle beam system Expired - Fee Related JP5758577B2 (en)

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