JP5758577B2 - 高圧荷電粒子ビーム・システム - Google Patents

高圧荷電粒子ビーム・システム Download PDF

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Publication number
JP5758577B2
JP5758577B2 JP2009549224A JP2009549224A JP5758577B2 JP 5758577 B2 JP5758577 B2 JP 5758577B2 JP 2009549224 A JP2009549224 A JP 2009549224A JP 2009549224 A JP2009549224 A JP 2009549224A JP 5758577 B2 JP5758577 B2 JP 5758577B2
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Prior art keywords
sample
gas
chamber
sample chamber
charged particle
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JP2009549224A
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English (en)
Japanese (ja)
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JP2010518583A (ja
JP2010518583A5 (enExample
Inventor
ラルフ・ウィリアム・ノウレス
ミロス・トス
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エフ・イ−・アイ・カンパニー
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/301Arrangements enabling beams to pass between regions of different pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/188Differential pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002Controlling environment of sample
    • H01J2237/2003Environmental cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/2602Details
    • H01J2237/2605Details operating at elevated pressures, e.g. atmosphere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31732Depositing thin layers on selected microareas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2009549224A 2007-02-06 2008-02-06 高圧荷電粒子ビーム・システム Expired - Fee Related JP5758577B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90002807P 2007-02-06 2007-02-06
US60/900,028 2007-02-06
PCT/US2008/053223 WO2008098084A1 (en) 2007-02-06 2008-02-06 High pressure charged particle beam system

Publications (3)

Publication Number Publication Date
JP2010518583A JP2010518583A (ja) 2010-05-27
JP2010518583A5 JP2010518583A5 (enExample) 2010-07-08
JP5758577B2 true JP5758577B2 (ja) 2015-08-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009549224A Expired - Fee Related JP5758577B2 (ja) 2007-02-06 2008-02-06 高圧荷電粒子ビーム・システム

Country Status (4)

Country Link
US (1) US8921811B2 (enExample)
EP (1) EP2109873B1 (enExample)
JP (1) JP5758577B2 (enExample)
WO (1) WO2008098084A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921811B2 (en) 2007-02-06 2014-12-30 Fei Company High pressure charged particle beam system
EP2105944A1 (en) 2008-03-28 2009-09-30 FEI Company Environmental cell for a particle-optical apparatus
US7791020B2 (en) 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
US8299432B2 (en) 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
DE102010003056B9 (de) * 2010-03-19 2014-07-31 Carl Zeiss Microscopy Gmbh Verfahren zur Erzeugung von Bildern einer Probe
JP2011258451A (ja) * 2010-06-10 2011-12-22 Hitachi High-Technologies Corp 走査電子顕微鏡
US8178851B2 (en) * 2010-07-30 2012-05-15 E.A. Fischione Instruments, Inc. In situ holder assembly
US9679741B2 (en) * 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US8853078B2 (en) * 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
EP2631929A1 (en) 2012-02-27 2013-08-28 FEI Company A holder assembly for cooperating with an environmental cell and an electron microscope
JP6224710B2 (ja) 2012-07-30 2017-11-01 エフ・イ−・アイ・カンパニー 環境制御型semガス注入システム
CN105103262B (zh) * 2013-04-12 2017-10-10 株式会社日立高新技术 带电粒子束装置以及过滤部件
US9123506B2 (en) * 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
JP6078646B2 (ja) * 2013-07-29 2017-02-08 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング装置を用いた加工方法
US9478390B2 (en) * 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
WO2016061033A1 (en) * 2014-10-13 2016-04-21 Washington State University Reactive deposition systems and associated methods
US9659768B2 (en) * 2014-12-23 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Focused radiation beam induced thin film deposition
US9842724B2 (en) * 2015-02-03 2017-12-12 Kla-Tencor Corporation Method and system for imaging of a photomask through a pellicle
US9799490B2 (en) * 2015-03-31 2017-10-24 Fei Company Charged particle beam processing using process gas and cooled surface
US9633816B2 (en) * 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
US10522330B2 (en) 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
US9583307B2 (en) * 2015-07-01 2017-02-28 Applied Materials Israel Ltd. System and method for controlling specimen outgassing
JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US9915866B2 (en) 2015-11-16 2018-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focused radiation beam induced deposition
EP3176808B1 (en) * 2015-12-03 2019-10-16 Carl Zeiss Microscopy Ltd. Method for detecting charged particles and particle beam device for carrying out the method
CN106783493B (zh) * 2016-12-01 2018-07-10 聚束科技(北京)有限公司 一种真空气氛处理装置、样品观测系统及方法
US11380438B2 (en) 2017-09-27 2022-07-05 Honeywell International Inc. Respiration-vocalization data collection system for air quality determination
WO2020141091A2 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Apparatus for obtaining optical measurements in a charged particle apparatus
US10876949B2 (en) 2019-04-26 2020-12-29 Honeywell International Inc. Flow device and associated method and system
US10794810B1 (en) 2019-08-02 2020-10-06 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11221288B2 (en) 2020-01-21 2022-01-11 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11181456B2 (en) 2020-02-14 2021-11-23 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11333593B2 (en) 2020-02-14 2022-05-17 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11391613B2 (en) * 2020-02-14 2022-07-19 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
US12111257B2 (en) 2020-08-26 2024-10-08 Honeywell International Inc. Fluid composition sensor device and method of using the same
US11835432B2 (en) 2020-10-26 2023-12-05 Honeywell International Inc. Fluid composition sensor device and method of using the same
US12281976B2 (en) 2021-05-13 2025-04-22 Honeywell International Inc. In situ fluid sampling device and method of using the same
DE102022208597A1 (de) 2022-08-18 2024-02-29 Carl Zeiss Microscopy Gmbh Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2819165A1 (de) * 1978-05-02 1979-11-15 Siemens Ag Rasterelektronenmikroskop
US4605566A (en) * 1983-08-22 1986-08-12 Nec Corporation Method for forming thin films by absorption
JPH0244445Y2 (enExample) * 1985-03-15 1990-11-26
JPS621358A (ja) 1985-06-27 1987-01-07 Toshiba Corp 画像形成装置
GB8604004D0 (en) * 1986-02-18 1986-03-26 Cambridge Instr Ltd Specimen chamber
CA1304069C (en) 1986-08-25 1992-06-23 Johannes C. Oudejans Hydrogenation catalyst
JPS6365952U (enExample) * 1986-10-17 1988-04-30
US5250808A (en) * 1987-05-21 1993-10-05 Electroscan Corporation Integrated electron optical/differential pumping/imaging signal system for an environmental scanning electron microscope
US4823006A (en) * 1987-05-21 1989-04-18 Electroscan Corporation Integrated electron optical/differential pumping/imaging signal detection system for an environmental scanning electron microscope
US4897545A (en) * 1987-05-21 1990-01-30 Electroscan Corporation Electron detector for use in a gaseous environment
US4785182A (en) * 1987-05-21 1988-11-15 Electroscan Corporation Secondary electron detector for use in a gaseous atmosphere
JPH03273134A (ja) * 1990-03-23 1991-12-04 Shimadzu Corp 走査型電子顕微鏡付き材料試験機
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5397956A (en) * 1992-01-13 1995-03-14 Tokyo Electron Limited Electron beam excited plasma system
KR960012334B1 (ko) * 1992-03-31 1996-09-18 가부시끼가이샤 히다찌세이사꾸쇼 하전빔과 반응성가스를 사용해서 시료를 처리하는 방법 및 장치
US5378898A (en) * 1992-09-08 1995-01-03 Zapit Technology, Inc. Electron beam system
JPH0719554B2 (ja) * 1993-03-25 1995-03-06 工業技術院長 荷電ビーム装置
US5446282A (en) 1993-04-05 1995-08-29 Nikon Corporation Scanning photoelectron microscope
US5412211A (en) * 1993-07-30 1995-05-02 Electroscan Corporation Environmental scanning electron microscope
US5362964A (en) * 1993-07-30 1994-11-08 Electroscan Corporation Environmental scanning electron microscope
US5440124A (en) * 1994-07-08 1995-08-08 Wisconsin Alumni Research Foundation High mass resolution local-electrode atom probe
US5828064A (en) * 1995-08-11 1998-10-27 Philips Electronics North America Corporation Field emission environmental scanning electron microscope
US6025592A (en) * 1995-08-11 2000-02-15 Philips Electronics North America High temperature specimen stage and detector for an environmental scanning electron microscope
JPH0963527A (ja) 1995-08-18 1997-03-07 Mitsubishi Electric Corp コンタミネーション低減装置
GB9623768D0 (en) * 1996-11-15 1997-01-08 Leo Electron Microscopy Limite Scanning electron microscope
JPH10172487A (ja) * 1996-12-13 1998-06-26 Nikon Corp 試料加熱装置
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US5945672A (en) * 1998-01-29 1999-08-31 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
US6440615B1 (en) * 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
DE60011031T2 (de) * 2000-02-01 2005-06-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Optische Säule für Teilchenstrahlvorrichtung
WO2002001596A1 (fr) * 2000-06-27 2002-01-03 Ebara Corporation Appareil d'inspection d'un faisceau de particules charge et procede de production d'un dispositif utilisant cet appareil
AUPQ932200A0 (en) * 2000-08-11 2000-08-31 Danilatos, Gerasimos Daniel Environmental scanning electron microscope
US6855929B2 (en) 2000-12-01 2005-02-15 Ebara Corporation Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
WO2002070142A1 (en) 2000-12-06 2002-09-12 Angstron Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
JP3926103B2 (ja) 2001-01-15 2007-06-06 日本電子株式会社 冷却ホルダ並びに走査電子顕微鏡
JP2002289129A (ja) * 2001-03-26 2002-10-04 Jeol Ltd 低真空走査電子顕微鏡
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP3723846B2 (ja) 2002-04-15 2005-12-07 独立行政法人産業技術総合研究所 電子ビーム装置
WO2003087797A1 (en) 2002-04-17 2003-10-23 Ebara Corporation Sample surface inspection apparatus and method
US6979822B1 (en) * 2002-09-18 2005-12-27 Fei Company Charged particle beam system
WO2004027809A2 (en) 2002-09-18 2004-04-01 Fei Company Charged particle beam system
US6674076B1 (en) * 2002-12-12 2004-01-06 Ballard Power Systems Inc. Humidified imaging with an environmental scanning electron microscope
GB0300474D0 (en) 2003-01-09 2003-02-12 Univ Cambridge Tech Detector for enviromental scanning electron microscope
US6897443B2 (en) 2003-06-02 2005-05-24 Harald Gross Portable scanning electron microscope
KR100974778B1 (ko) 2003-06-30 2010-08-06 삼성전자주식회사 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법
US7208221B2 (en) * 2003-10-15 2007-04-24 Board Of Trustees Of Michigan State University Biocomposites sheet molding and methods of making those
JP2005174591A (ja) 2003-12-08 2005-06-30 Horon:Kk 荷電粒子線装置および荷電粒子線像生成方法
JP2005190864A (ja) 2003-12-26 2005-07-14 Hitachi High-Technologies Corp 電子線装置及び電子線装置用試料ホルダー
NL1026547C2 (nl) * 2004-07-01 2006-01-03 Fei Co Apparaat voor het evacueren van een sample.
JP4262158B2 (ja) * 2004-07-13 2009-05-13 株式会社日立ハイテクサイエンスシステムズ 低真空走査電子顕微鏡
US7304302B1 (en) * 2004-08-27 2007-12-04 Kla-Tencor Technologies Corp. Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis
JP4434901B2 (ja) 2004-09-28 2010-03-17 京セラ株式会社 試料搬送装置
JP4895569B2 (ja) 2005-01-26 2012-03-14 株式会社日立ハイテクノロジーズ 帯電制御装置及び帯電制御装置を備えた計測装置
JP4636897B2 (ja) 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
TW200639901A (en) * 2005-05-09 2006-11-16 Li Bing Huan Device for operating gas in vacuum or low-pressure environment and for observation of the operation
EP1724809A1 (en) 2005-05-18 2006-11-22 FEI Company Particle-optical apparatus for the irradiation of a sample
JP4627682B2 (ja) * 2005-05-27 2011-02-09 株式会社日立ハイテクノロジーズ 試料作製装置および方法
EP1816668A2 (en) * 2006-02-01 2007-08-08 FEI Company Particle-optical apparatus with a predetermined final vacuum pressure
JP5227512B2 (ja) 2006-12-27 2013-07-03 株式会社日立ハイテクノロジーズ 電子線応用装置
US8921811B2 (en) 2007-02-06 2014-12-30 Fei Company High pressure charged particle beam system
EP1956633A3 (en) 2007-02-06 2009-12-16 FEI Company Particle-optical apparatus for simultaneous observing a sample with particles and photons
EP2006881A3 (en) * 2007-06-18 2010-01-06 FEI Company In-chamber electron detector
DE102007054074A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
US20110006205A1 (en) 2009-07-12 2011-01-13 Raymond Browning Ambient pressure photoelectron microscope

Also Published As

Publication number Publication date
EP2109873A4 (en) 2014-05-07
EP2109873A1 (en) 2009-10-21
US20110031394A1 (en) 2011-02-10
JP2010518583A (ja) 2010-05-27
EP2109873B1 (en) 2017-04-05
WO2008098084A1 (en) 2008-08-14
US8921811B2 (en) 2014-12-30

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