JP5758577B2 - 高圧荷電粒子ビーム・システム - Google Patents
高圧荷電粒子ビーム・システム Download PDFInfo
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- JP5758577B2 JP5758577B2 JP2009549224A JP2009549224A JP5758577B2 JP 5758577 B2 JP5758577 B2 JP 5758577B2 JP 2009549224 A JP2009549224 A JP 2009549224A JP 2009549224 A JP2009549224 A JP 2009549224A JP 5758577 B2 JP5758577 B2 JP 5758577B2
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- Prior art keywords
- sample
- gas
- chamber
- sample chamber
- charged particle
- Prior art date
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- Expired - Fee Related
Links
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- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/301—Arrangements enabling beams to pass between regions of different pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2002—Controlling environment of sample
- H01J2237/2003—Environmental cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2602—Details
- H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90002807P | 2007-02-06 | 2007-02-06 | |
| US60/900,028 | 2007-02-06 | ||
| PCT/US2008/053223 WO2008098084A1 (en) | 2007-02-06 | 2008-02-06 | High pressure charged particle beam system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010518583A JP2010518583A (ja) | 2010-05-27 |
| JP2010518583A5 JP2010518583A5 (enExample) | 2010-07-08 |
| JP5758577B2 true JP5758577B2 (ja) | 2015-08-05 |
Family
ID=39682104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009549224A Expired - Fee Related JP5758577B2 (ja) | 2007-02-06 | 2008-02-06 | 高圧荷電粒子ビーム・システム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8921811B2 (enExample) |
| EP (1) | EP2109873B1 (enExample) |
| JP (1) | JP5758577B2 (enExample) |
| WO (1) | WO2008098084A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8921811B2 (en) | 2007-02-06 | 2014-12-30 | Fei Company | High pressure charged particle beam system |
| EP2105944A1 (en) | 2008-03-28 | 2009-09-30 | FEI Company | Environmental cell for a particle-optical apparatus |
| US7791020B2 (en) | 2008-03-31 | 2010-09-07 | Fei Company | Multistage gas cascade amplifier |
| US8299432B2 (en) | 2008-11-04 | 2012-10-30 | Fei Company | Scanning transmission electron microscope using gas amplification |
| US8524139B2 (en) | 2009-08-10 | 2013-09-03 | FEI Compay | Gas-assisted laser ablation |
| US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
| DE102010003056B9 (de) * | 2010-03-19 | 2014-07-31 | Carl Zeiss Microscopy Gmbh | Verfahren zur Erzeugung von Bildern einer Probe |
| JP2011258451A (ja) * | 2010-06-10 | 2011-12-22 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
| US8178851B2 (en) * | 2010-07-30 | 2012-05-15 | E.A. Fischione Instruments, Inc. | In situ holder assembly |
| US9679741B2 (en) * | 2010-11-09 | 2017-06-13 | Fei Company | Environmental cell for charged particle beam system |
| US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
| US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| EP2631929A1 (en) | 2012-02-27 | 2013-08-28 | FEI Company | A holder assembly for cooperating with an environmental cell and an electron microscope |
| JP6224710B2 (ja) | 2012-07-30 | 2017-11-01 | エフ・イ−・アイ・カンパニー | 環境制御型semガス注入システム |
| CN105103262B (zh) * | 2013-04-12 | 2017-10-10 | 株式会社日立高新技术 | 带电粒子束装置以及过滤部件 |
| US9123506B2 (en) * | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
| JP6078646B2 (ja) * | 2013-07-29 | 2017-02-08 | 株式会社日立ハイテクノロジーズ | イオンミリング装置、及びイオンミリング装置を用いた加工方法 |
| US9478390B2 (en) * | 2014-06-30 | 2016-10-25 | Fei Company | Integrated light optics and gas delivery in a charged particle lens |
| WO2016061033A1 (en) * | 2014-10-13 | 2016-04-21 | Washington State University | Reactive deposition systems and associated methods |
| US9659768B2 (en) * | 2014-12-23 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focused radiation beam induced thin film deposition |
| US9842724B2 (en) * | 2015-02-03 | 2017-12-12 | Kla-Tencor Corporation | Method and system for imaging of a photomask through a pellicle |
| US9799490B2 (en) * | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
| US9633816B2 (en) * | 2015-05-18 | 2017-04-25 | Fei Company | Electron beam microscope with improved imaging gas and method of use |
| US10522330B2 (en) | 2015-06-12 | 2019-12-31 | Varian Semiconductor Equipment Associates, Inc. | In-situ plasma cleaning of process chamber components |
| US9583307B2 (en) * | 2015-07-01 | 2017-02-28 | Applied Materials Israel Ltd. | System and method for controlling specimen outgassing |
| JP2017020106A (ja) | 2015-07-02 | 2017-01-26 | エフ・イ−・アイ・カンパニー | 高スループット・パターン形成のための適応ビーム電流 |
| US9915866B2 (en) | 2015-11-16 | 2018-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Focused radiation beam induced deposition |
| EP3176808B1 (en) * | 2015-12-03 | 2019-10-16 | Carl Zeiss Microscopy Ltd. | Method for detecting charged particles and particle beam device for carrying out the method |
| CN106783493B (zh) * | 2016-12-01 | 2018-07-10 | 聚束科技(北京)有限公司 | 一种真空气氛处理装置、样品观测系统及方法 |
| US11380438B2 (en) | 2017-09-27 | 2022-07-05 | Honeywell International Inc. | Respiration-vocalization data collection system for air quality determination |
| WO2020141091A2 (en) * | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Apparatus for obtaining optical measurements in a charged particle apparatus |
| US10876949B2 (en) | 2019-04-26 | 2020-12-29 | Honeywell International Inc. | Flow device and associated method and system |
| US10794810B1 (en) | 2019-08-02 | 2020-10-06 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11221288B2 (en) | 2020-01-21 | 2022-01-11 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11181456B2 (en) | 2020-02-14 | 2021-11-23 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11333593B2 (en) | 2020-02-14 | 2022-05-17 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11391613B2 (en) * | 2020-02-14 | 2022-07-19 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11069509B1 (en) * | 2020-03-16 | 2021-07-20 | Fei Company | Method and system for backside planar view lamella preparation |
| US12111257B2 (en) | 2020-08-26 | 2024-10-08 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US11835432B2 (en) | 2020-10-26 | 2023-12-05 | Honeywell International Inc. | Fluid composition sensor device and method of using the same |
| US12281976B2 (en) | 2021-05-13 | 2025-04-22 | Honeywell International Inc. | In situ fluid sampling device and method of using the same |
| DE102022208597A1 (de) | 2022-08-18 | 2024-02-29 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2819165A1 (de) * | 1978-05-02 | 1979-11-15 | Siemens Ag | Rasterelektronenmikroskop |
| US4605566A (en) * | 1983-08-22 | 1986-08-12 | Nec Corporation | Method for forming thin films by absorption |
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| JPS621358A (ja) | 1985-06-27 | 1987-01-07 | Toshiba Corp | 画像形成装置 |
| GB8604004D0 (en) * | 1986-02-18 | 1986-03-26 | Cambridge Instr Ltd | Specimen chamber |
| CA1304069C (en) | 1986-08-25 | 1992-06-23 | Johannes C. Oudejans | Hydrogenation catalyst |
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| JPH0719554B2 (ja) * | 1993-03-25 | 1995-03-06 | 工業技術院長 | 荷電ビーム装置 |
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-
2008
- 2008-02-06 US US12/525,908 patent/US8921811B2/en active Active
- 2008-02-06 EP EP08729206.6A patent/EP2109873B1/en not_active Not-in-force
- 2008-02-06 JP JP2009549224A patent/JP5758577B2/ja not_active Expired - Fee Related
- 2008-02-06 WO PCT/US2008/053223 patent/WO2008098084A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP2109873A4 (en) | 2014-05-07 |
| EP2109873A1 (en) | 2009-10-21 |
| US20110031394A1 (en) | 2011-02-10 |
| JP2010518583A (ja) | 2010-05-27 |
| EP2109873B1 (en) | 2017-04-05 |
| WO2008098084A1 (en) | 2008-08-14 |
| US8921811B2 (en) | 2014-12-30 |
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