JP2010514937A - プラズマ蒸着微孔性炭素材料 - Google Patents

プラズマ蒸着微孔性炭素材料 Download PDF

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Publication number
JP2010514937A
JP2010514937A JP2009544163A JP2009544163A JP2010514937A JP 2010514937 A JP2010514937 A JP 2010514937A JP 2009544163 A JP2009544163 A JP 2009544163A JP 2009544163 A JP2009544163 A JP 2009544163A JP 2010514937 A JP2010514937 A JP 2010514937A
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Prior art keywords
layer
hydrocarbon
microporous carbon
plasma
microporous
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Japanese (ja)
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JP2010514937A5 (OSRAM
Inventor
エム． パオルッチ，ドラ
エム． デイビッド，モーゼス
エー． ラコウ，ニール
イー． トレンド，ジョン
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/0058—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by selective elimination of components, e.g. by leaching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/60—Nonwoven fabric [i.e., nonwoven strand or fiber material]
    • Y10T442/608—Including strand or fiber material which is of specific structural definition
    • Y10T442/614—Strand or fiber material specified as having microdimensions [i.e., microfiber]
    • Y10T442/624—Microfiber is carbon or carbonaceous

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2009544163A 2006-12-29 2007-12-13 プラズマ蒸着微孔性炭素材料 Ceased JP2010514937A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/618,010 US7901776B2 (en) 2006-12-29 2006-12-29 Plasma deposited microporous carbon material
PCT/US2007/087347 WO2008082897A1 (en) 2006-12-29 2007-12-13 Plasma deposited microporous carbon material

Publications (2)

Publication Number Publication Date
JP2010514937A true JP2010514937A (ja) 2010-05-06
JP2010514937A5 JP2010514937A5 (OSRAM) 2011-01-20

Family

ID=39226855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009544163A Ceased JP2010514937A (ja) 2006-12-29 2007-12-13 プラズマ蒸着微孔性炭素材料

Country Status (7)

Country Link
US (1) US7901776B2 (OSRAM)
EP (1) EP2111481A1 (OSRAM)
JP (1) JP2010514937A (OSRAM)
KR (1) KR20090101289A (OSRAM)
CN (1) CN101573470B (OSRAM)
BR (1) BRPI0720568A2 (OSRAM)
WO (1) WO2008082897A1 (OSRAM)

Families Citing this family (21)

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KR101476487B1 (ko) 2007-10-05 2014-12-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플라즈마-증착된 미공성 층을 포함하는 유기 화학적 센서와, 제조 및 사용 방법
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8459200B2 (en) * 2008-06-30 2013-06-11 3M Innovative Properties Company Exposure indicating device
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
CN102246278B (zh) * 2008-12-10 2014-01-01 朗姆研究公司 用于促进硅电极抛光的盘和适配器组件
EP2583090B1 (en) 2010-06-15 2016-04-06 3M Innovative Properties Company Variable capacitance sensors and methods of making the same
JP5810652B2 (ja) * 2011-06-13 2015-11-11 ソニー株式会社 液体塗布用繊維複合体
GB2493698B (en) * 2011-08-08 2018-02-28 Univ Nottingham Trent Surface plasmon resonance in thin films
DE102012213178A1 (de) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED-Modul mit Leiterplatte
TWI565532B (zh) * 2012-08-07 2017-01-11 國立交通大學 奈米球溶液塗佈方法與其應用
CN102899966B (zh) * 2012-10-22 2017-08-29 杭州春胜纸业有限公司 微米碳粉电磁屏蔽纸的制造方法
KR101408136B1 (ko) * 2012-10-26 2014-06-17 한국과학기술연구원 나노 다공성 물질의 제조방법 및 나노 다공성 물질
JP5937033B2 (ja) 2013-03-22 2016-06-22 株式会社東芝 半導体装置、半導体装置の製造方法、および半導体装置の製造装置
EP3085434B1 (en) * 2013-11-29 2019-09-18 National Institute for Materials Science Nanofiltration or reverse osmosis membrane made of hard carbon film, filtering filter, two-layer-bonded-type filtering filter, and methods for manufacturing same
US9735366B2 (en) * 2014-09-30 2017-08-15 Cnm Technologies Gmbh Heterostructure comprising a carbon nanomembrane
JP6896629B2 (ja) * 2014-12-19 2021-06-30 タタ、スティール、ネダーランド、テクノロジー、ベスローテン、フェンノートシャップＴａｔａ Ｓｔｅｅｌ Ｎｅｄｅｒｌａｎｄ Ｔｅｃｈｎｏｌｏｇｙ Ｂｖ 蒸気流から粒子を除去するためのフィルターデバイス
CN106404860A (zh) * 2016-08-30 2017-02-15 济南大学 一种氮化碳修饰三维石墨电极的制备方法及电致化学发光传感应用
CN108344714B (zh) * 2018-01-16 2020-07-31 东南大学 基于有序多孔纳米结构薄膜干涉效应的生物检测仪及其进行生物分子检测的方法
CN111229164B (zh) * 2020-02-21 2022-03-08 大连理工大学 一种分离烯烃烷烃的微孔炭吸附剂及其制备方法和应用
US20210315293A1 (en) * 2020-04-08 2021-10-14 Luciano Castillo Wearable face mask with anti-viral filtration media
CN118899205A (zh) * 2024-07-24 2024-11-05 深圳碳闪科技有限公司 金规则微筛支持膜的制备方法

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WO2006124965A1 (en) * 2005-05-17 2006-11-23 Applied Materials, Inc A semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing

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WO2006124965A1 (en) * 2005-05-17 2006-11-23 Applied Materials, Inc A semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing

Also Published As

Publication number Publication date
KR20090101289A (ko) 2009-09-24
US20080160858A1 (en) 2008-07-03
CN101573470B (zh) 2011-08-03
WO2008082897A1 (en) 2008-07-10
BRPI0720568A2 (pt) 2014-02-04
CN101573470A (zh) 2009-11-04
US7901776B2 (en) 2011-03-08
EP2111481A1 (en) 2009-10-28

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