BRPI0720568A2 - Material de carbono microporoso com depósito de plasma - Google Patents

Material de carbono microporoso com depósito de plasma Download PDF

Info

Publication number
BRPI0720568A2
BRPI0720568A2 BRPI0720568-6A2A BRPI0720568A BRPI0720568A2 BR PI0720568 A2 BRPI0720568 A2 BR PI0720568A2 BR PI0720568 A BRPI0720568 A BR PI0720568A BR PI0720568 A2 BRPI0720568 A2 BR PI0720568A2
Authority
BR
Brazil
Prior art keywords
layer
hydrocarbon
microporous carbon
plasma
microporous
Prior art date
Application number
BRPI0720568-6A2A
Other languages
English (en)
Portuguese (pt)
Inventor
Dora M Paolucci
Moses M David
Neal A Rakow
John E Trend
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of BRPI0720568A2 publication Critical patent/BRPI0720568A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/0058—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by selective elimination of components, e.g. by leaching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/60—Nonwoven fabric [i.e., nonwoven strand or fiber material]
    • Y10T442/608—Including strand or fiber material which is of specific structural definition
    • Y10T442/614—Strand or fiber material specified as having microdimensions [i.e., microfiber]
    • Y10T442/624—Microfiber is carbon or carbonaceous

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
BRPI0720568-6A2A 2006-12-29 2007-12-13 Material de carbono microporoso com depósito de plasma BRPI0720568A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/618.010 2006-12-29
US11/618,010 US7901776B2 (en) 2006-12-29 2006-12-29 Plasma deposited microporous carbon material
PCT/US2007/087347 WO2008082897A1 (en) 2006-12-29 2007-12-13 Plasma deposited microporous carbon material

Publications (1)

Publication Number Publication Date
BRPI0720568A2 true BRPI0720568A2 (pt) 2014-02-04

Family

ID=39226855

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0720568-6A2A BRPI0720568A2 (pt) 2006-12-29 2007-12-13 Material de carbono microporoso com depósito de plasma

Country Status (7)

Country Link
US (1) US7901776B2 (OSRAM)
EP (1) EP2111481A1 (OSRAM)
JP (1) JP2010514937A (OSRAM)
KR (1) KR20090101289A (OSRAM)
CN (1) CN101573470B (OSRAM)
BR (1) BRPI0720568A2 (OSRAM)
WO (1) WO2008082897A1 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101476487B1 (ko) 2007-10-05 2014-12-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플라즈마-증착된 미공성 층을 포함하는 유기 화학적 센서와, 제조 및 사용 방법
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8459200B2 (en) * 2008-06-30 2013-06-11 3M Innovative Properties Company Exposure indicating device
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
CN102246278B (zh) * 2008-12-10 2014-01-01 朗姆研究公司 用于促进硅电极抛光的盘和适配器组件
EP2583090B1 (en) 2010-06-15 2016-04-06 3M Innovative Properties Company Variable capacitance sensors and methods of making the same
JP5810652B2 (ja) * 2011-06-13 2015-11-11 ソニー株式会社 液体塗布用繊維複合体
GB2493698B (en) * 2011-08-08 2018-02-28 Univ Nottingham Trent Surface plasmon resonance in thin films
DE102012213178A1 (de) * 2012-04-30 2013-10-31 At & S Austria Technologie & Systemtechnik Aktiengesellschaft LED-Modul mit Leiterplatte
TWI565532B (zh) * 2012-08-07 2017-01-11 國立交通大學 奈米球溶液塗佈方法與其應用
CN102899966B (zh) * 2012-10-22 2017-08-29 杭州春胜纸业有限公司 微米碳粉电磁屏蔽纸的制造方法
KR101408136B1 (ko) * 2012-10-26 2014-06-17 한국과학기술연구원 나노 다공성 물질의 제조방법 및 나노 다공성 물질
JP5937033B2 (ja) 2013-03-22 2016-06-22 株式会社東芝 半導体装置、半導体装置の製造方法、および半導体装置の製造装置
EP3085434B1 (en) * 2013-11-29 2019-09-18 National Institute for Materials Science Nanofiltration or reverse osmosis membrane made of hard carbon film, filtering filter, two-layer-bonded-type filtering filter, and methods for manufacturing same
US9735366B2 (en) * 2014-09-30 2017-08-15 Cnm Technologies Gmbh Heterostructure comprising a carbon nanomembrane
JP6896629B2 (ja) * 2014-12-19 2021-06-30 タタ、スティール、ネダーランド、テクノロジー、ベスローテン、フェンノートシャップＴａｔａ Ｓｔｅｅｌ Ｎｅｄｅｒｌａｎｄ Ｔｅｃｈｎｏｌｏｇｙ Ｂｖ 蒸気流から粒子を除去するためのフィルターデバイス
CN106404860A (zh) * 2016-08-30 2017-02-15 济南大学 一种氮化碳修饰三维石墨电极的制备方法及电致化学发光传感应用
CN108344714B (zh) * 2018-01-16 2020-07-31 东南大学 基于有序多孔纳米结构薄膜干涉效应的生物检测仪及其进行生物分子检测的方法
CN111229164B (zh) * 2020-02-21 2022-03-08 大连理工大学 一种分离烯烃烷烃的微孔炭吸附剂及其制备方法和应用
US20210315293A1 (en) * 2020-04-08 2021-10-14 Luciano Castillo Wearable face mask with anti-viral filtration media
CN118899205A (zh) * 2024-07-24 2024-11-05 深圳碳闪科技有限公司 金规则微筛支持膜的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4685940A (en) 1984-03-12 1987-08-11 Abraham Soffer Separation device
IL105142A (en) 1993-03-23 1997-01-10 Aga Ab Method of improving the selectivity of carbon membranes by chemical carbon vapor deposition
JPH0798278A (ja) * 1993-08-06 1995-04-11 Tdk Corp 化学物質センサ
JP3116793B2 (ja) 1995-11-24 2000-12-11 三菱自動車工業株式会社 ウインドガラスの仮止め用クリップ
JP4128628B2 (ja) * 1996-05-15 2008-07-30 ハイピリオン カタリシス インターナショナル インコーポレイテッド 堅い多孔質炭素構造体及びその製造方法
US5972079A (en) 1996-06-28 1999-10-26 University Of Delaware Supported carbogenic molecular sieve membrane and method of producing the same
RU2151737C1 (ru) 1997-05-30 2000-06-27 Акционерное общество закрытого типа "Карбид" Способ получения пористого углеродного изделия и пористое углеродное изделие, полученное этим способом
US6039792A (en) 1997-06-24 2000-03-21 Regents Of The University Of California And Bp Amoco Corporation Methods of forming and using porous structures for energy efficient separation of light gases by capillary condensation
CN1174916C (zh) * 1999-04-21 2004-11-10 张震 碳毫微管的形成方法
US6297293B1 (en) * 1999-09-15 2001-10-02 Tda Research, Inc. Mesoporous carbons and polymers
DE60236642D1 (de) 2001-04-06 2010-07-22 Univ Carnegie Mellon Verfahren zur herstellung von nanostrukturierten materialien
US6730364B2 (en) 2002-03-28 2004-05-04 National Science Council Preparation of carbon molecular sieve membranes on porous substrate
EP1523512B1 (en) * 2002-07-22 2019-12-25 Aspen Aerogels Inc. Polyimide aerogels, carbon aerogels, and metal carbide aerogels and methods of making same
US7030167B2 (en) 2003-06-25 2006-04-18 Agilent Technologies, Inc. Nanoporous structures produced from self-assembling molecules
GB0317557D0 (en) 2003-07-26 2003-08-27 Univ Manchester Microporous polymer material
US7109098B1 (en) * 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
JP2006335596A (ja) 2005-06-01 2006-12-14 Tohoku Univ 規則性のある大表面積ミクロポーラス炭素の簡便な合成方法

Also Published As

Publication number Publication date
KR20090101289A (ko) 2009-09-24
US20080160858A1 (en) 2008-07-03
CN101573470B (zh) 2011-08-03
WO2008082897A1 (en) 2008-07-10
JP2010514937A (ja) 2010-05-06
CN101573470A (zh) 2009-11-04
US7901776B2 (en) 2011-03-08
EP2111481A1 (en) 2009-10-28

Similar Documents

Publication Publication Date Title
BRPI0720568A2 (pt) Material de carbono microporoso com depósito de plasma
BRPI0620330A2 (pt) camada de detecção de analito microporoso depositado a plasma
KR101372725B1 (ko) 침투성 나노입자 반사기
RU2490616C2 (ru) Многослойные колориметрические датчики
AU660982B2 (en) Sensors based on nano-structured composite films
Korotcenkov et al. Porous semiconductors: advanced material for gas sensor applications
RU2360232C2 (ru) Колориметрический датчик
EP2208058B1 (en) Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using
CN101331399B (zh) 光化学传感器及其制造方法
CN103154712B (zh) 传感器元件及其制备方法和包括所述传感器元件的传感器装置
US8647884B2 (en) Organic chemical sensor with microporous organosilicate material
EP2483669A1 (en) Nanoplasmonic device
Romanos et al. A facile approach for the development of fine-tuned self-standing graphene oxide membranes and their gas and vapor separation performance
De Stefano et al. Protein‐modified porous silicon nanostructures
Tran et al. Characteristics of polyimide-based composite membranes fabricated by low-temperature plasma polymerization
WO1994004241A2 (en) Polymerized polysiloxane membrane for oxygen sensing device
Kertész et al. Vapor sensing on bare and modified blue butterfly wing scales
CN104797416A (zh) 亲水性构件及其制造方法
Korotcenkov Solid state gas and vapor sensors based on porous silicon
Bearzotti Influence of metal electrodes on the response of humidity sensors coated with mesoporous silica
Caliò et al. PDIF-CN 2 modified porous silicon optical and electrical transducers for biochemical sensing electrical and optical sensing by porous silicon devices
Gao Vapor sensors using porous silicon-based optical interferometers
Korotcenkov POROUS SEMICONDUCTORS
Kavalenka et al. Hybrid polymer/ultrathin porous nanocrystalline silicon membranes system for flow-through chemical vapor and gas detection

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2284 DE 14/10/2014.