JP2010505045A - 効率的なガリウム薄膜電気めっき方法及び化学 - Google Patents
効率的なガリウム薄膜電気めっき方法及び化学 Download PDFInfo
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- JP2010505045A JP2010505045A JP2009530550A JP2009530550A JP2010505045A JP 2010505045 A JP2010505045 A JP 2010505045A JP 2009530550 A JP2009530550 A JP 2009530550A JP 2009530550 A JP2009530550 A JP 2009530550A JP 2010505045 A JP2010505045 A JP 2010505045A
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
- 229910001388 sodium aluminate Inorganic materials 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000001433 sodium tartrate Substances 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- -1 thiorea Chemical compound 0.000 description 1
- 239000001069 triethyl citrate Substances 0.000 description 1
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/535,927 US7507321B2 (en) | 2006-01-06 | 2006-09-27 | Efficient gallium thin film electroplating methods and chemistries |
| PCT/US2007/079356 WO2008039736A1 (en) | 2006-09-27 | 2007-09-25 | Efficient gallium thin film electroplating methods and chemistries |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010505045A true JP2010505045A (ja) | 2010-02-18 |
| JP2010505045A5 JP2010505045A5 (enExample) | 2010-11-11 |
Family
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| JP2009530550A Pending JP2010505045A (ja) | 2006-09-27 | 2007-09-25 | 効率的なガリウム薄膜電気めっき方法及び化学 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7507321B2 (enExample) |
| EP (1) | EP2094882A4 (enExample) |
| JP (1) | JP2010505045A (enExample) |
| KR (1) | KR20090085583A (enExample) |
| CN (1) | CN101528987A (enExample) |
| TW (1) | TW200829725A (enExample) |
| WO (1) | WO2008039736A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011103462A (ja) * | 2009-11-11 | 2011-05-26 | Internatl Business Mach Corp <Ibm> | 光起電力デバイスの形成 |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US20070093006A1 (en) * | 2005-10-24 | 2007-04-26 | Basol Bulent M | Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto |
| US7507321B2 (en) * | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
| US7892413B2 (en) * | 2006-09-27 | 2011-02-22 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US8066865B2 (en) * | 2008-05-19 | 2011-11-29 | Solopower, Inc. | Electroplating methods and chemistries for deposition of group IIIA-group via thin films |
| US20080175993A1 (en) * | 2006-10-13 | 2008-07-24 | Jalal Ashjaee | Reel-to-reel reaction of a precursor film to form solar cell absorber |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
| JP2008260981A (ja) * | 2007-04-10 | 2008-10-30 | Yuken Industry Co Ltd | めっき液、めっき方法およびめっき皮膜が形成された物品 |
| US8225664B1 (en) * | 2007-10-17 | 2012-07-24 | Lsp Technologies | Lamb waves for laser bond inspection |
| US8409418B2 (en) * | 2009-02-06 | 2013-04-02 | Solopower, Inc. | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers |
| US8425753B2 (en) * | 2008-05-19 | 2013-04-23 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US20090188808A1 (en) * | 2008-01-29 | 2009-07-30 | Jiaxiong Wang | Indium electroplating baths for thin layer deposition |
| EP2128903B1 (en) * | 2008-05-30 | 2017-02-22 | ATOTECH Deutschland GmbH | Electroplating additive for the deposition of a metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)-group 13 (IIIA)-group 16 (VIA) |
| US7951280B2 (en) * | 2008-11-07 | 2011-05-31 | Solopower, Inc. | Gallium electroplating methods and electrolytes employing mixed solvents |
| WO2010065955A1 (en) * | 2008-12-05 | 2010-06-10 | Solopower, Inc. | Method and apparatus for forming contact layers for continuous workpieces |
| US20100200417A1 (en) * | 2009-02-04 | 2010-08-12 | Impulse Devices, Inc. | Method and Apparatus for Electrodeposition in Metal Acoustic Resonators |
| US20100213073A1 (en) * | 2009-02-23 | 2010-08-26 | International Business Machines Corporation | Bath for electroplating a i-iii-vi compound, use thereof and structures containing same |
| WO2010126699A2 (en) | 2009-04-29 | 2010-11-04 | Hunter Douglas Industries B.V. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
| CN101805915A (zh) * | 2010-04-20 | 2010-08-18 | 南开大学 | 一种电镀金属Ga和Ga合金的溶液体系及其制备方法 |
| US8304272B2 (en) | 2010-07-02 | 2012-11-06 | International Business Machines Corporation | Germanium photodetector |
| US20120055612A1 (en) | 2010-09-02 | 2012-03-08 | International Business Machines Corporation | Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures |
| US8545689B2 (en) | 2010-09-02 | 2013-10-01 | International Business Machines Corporation | Gallium electrodeposition processes and chemistries |
| US20120143046A1 (en) * | 2010-12-03 | 2012-06-07 | Stadler Bethanie J H | Electro-chemical-deposition of galfenol and the uses therof |
| JP5552042B2 (ja) | 2010-12-27 | 2014-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プログラム解析の方法、システムおよびプログラム |
| ES2546065T3 (es) | 2011-07-20 | 2015-09-18 | Enthone Inc. | Aparato para la deposición electroquímica de un metal |
| US9410259B2 (en) | 2011-09-02 | 2016-08-09 | Alliance For Sustainable Energy, Llc | Electrodeposition of gallium for photovoltaics |
| CN102703928B (zh) * | 2012-05-23 | 2015-04-01 | 中国科学院过程工程研究所 | 一种超声辅助强化电解提取金属镓的方法 |
| CN103114316B (zh) * | 2013-03-01 | 2015-10-28 | 沈阳师范大学 | 一种环境友好的镀镓用电镀液 |
| CN103741185B (zh) * | 2013-12-12 | 2017-01-04 | 深圳首创新能源股份有限公司 | 制备cigs吸收层的电镀生产线 |
| WO2018140433A1 (en) | 2017-01-24 | 2018-08-02 | Mallinckrodt Nuclear Medicine Llc | Gallium-69 enriched target bodies |
| US11103878B2 (en) | 2017-04-03 | 2021-08-31 | Yale University | Electrochemical separation and recovery of metals |
| CN106968002A (zh) * | 2017-05-09 | 2017-07-21 | 句容市博远电子有限公司 | 一种含稀散金属的电镀液 |
| US20200006412A1 (en) * | 2018-06-28 | 2020-01-02 | Applied Materials, Inc. | Methods and apparatus for image sensor semiconductors |
| CN112779013B (zh) * | 2020-12-31 | 2022-04-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光电化学刻蚀氮化镓的刻蚀液 |
| US12057670B2 (en) | 2021-03-31 | 2024-08-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method for manufacturing the same |
| EP4628630A2 (en) | 2021-06-01 | 2025-10-08 | NTH Cycle, Inc. | Electrochemical metal deposition system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04325688A (ja) * | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| JPH09176863A (ja) * | 1995-11-15 | 1997-07-08 | Mcgean Rohco Inc | 水性無電解メッキ溶液 |
| EP1103637A1 (en) * | 1999-11-29 | 2001-05-30 | ENTHONE-OMI, Inc. | Method of producing AuCuGa alloy coating using electrolysis, and alloys produced by such a method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2582377A (en) * | 1947-04-11 | 1952-01-15 | Aluminum Co Of America | Recovery of gallium from alkali metal aluminate solutions |
| US2793179A (en) * | 1955-06-13 | 1957-05-21 | Ind De L Aluminium Sa | Method of recovering gallium from an alkali aluminate lye |
| US2873232A (en) * | 1956-06-18 | 1959-02-10 | Philco Corp | Method of jet plating |
| US3061528A (en) * | 1961-07-13 | 1962-10-30 | Hughes Aircraft Co | Gallium plating and methods therefor |
| US3787463A (en) * | 1972-02-24 | 1974-01-22 | Oxy Metal Finishing Corp | Amine gold complex useful for the electrodeposition of gold and its alloys |
| US4199416A (en) * | 1977-05-03 | 1980-04-22 | Johnson, Matthey & Co., Limited | Composition for the electroplating of gold |
| US4488942A (en) * | 1983-08-05 | 1984-12-18 | Omi International Corporation | Zinc and zinc alloy electroplating bath and process |
| US5304403A (en) * | 1992-09-04 | 1994-04-19 | General Moors Corporation | Zinc/nickel/phosphorus coatings and elecroless coating method therefor |
| CH687112A5 (fr) * | 1993-06-08 | 1996-09-13 | Yazaki Corp | Procédé pour déposer un précurseur du composé CuInSe(2). |
| JP2806469B2 (ja) * | 1993-09-16 | 1998-09-30 | 矢崎総業株式会社 | 太陽電池吸収層の製造方法 |
| JP3089994B2 (ja) * | 1995-07-26 | 2000-09-18 | 矢崎総業株式会社 | 銅−インジウム−硫黄−セレン薄膜の作製方法、及び銅−インジウム−硫黄−セレン系カルコパイライト結晶の製造方法 |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
| US20020189665A1 (en) * | 2000-04-10 | 2002-12-19 | Davis, Joseph & Negley | Preparation of CIGS-based solar cells using a buffered electrodeposition bath |
| FR2839201B1 (fr) * | 2002-04-29 | 2005-04-01 | Electricite De France | Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques |
| FR2849532B1 (fr) * | 2002-12-26 | 2005-08-19 | Electricite De France | Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US7507321B2 (en) * | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
-
2006
- 2006-09-27 US US11/535,927 patent/US7507321B2/en not_active Expired - Fee Related
-
2007
- 2007-09-25 JP JP2009530550A patent/JP2010505045A/ja active Pending
- 2007-09-25 KR KR1020097008547A patent/KR20090085583A/ko not_active Ceased
- 2007-09-25 CN CNA2007800391728A patent/CN101528987A/zh active Pending
- 2007-09-25 EP EP07814990A patent/EP2094882A4/en not_active Withdrawn
- 2007-09-25 WO PCT/US2007/079356 patent/WO2008039736A1/en not_active Ceased
- 2007-09-27 TW TW096135964A patent/TW200829725A/zh unknown
-
2009
- 2009-03-16 US US12/404,690 patent/US20090173634A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04325688A (ja) * | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| JPH09176863A (ja) * | 1995-11-15 | 1997-07-08 | Mcgean Rohco Inc | 水性無電解メッキ溶液 |
| EP1103637A1 (en) * | 1999-11-29 | 2001-05-30 | ENTHONE-OMI, Inc. | Method of producing AuCuGa alloy coating using electrolysis, and alloys produced by such a method |
Non-Patent Citations (1)
| Title |
|---|
| JPN6012067371; L Zhang 他2名: 'Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment' Solar Energy Materials and Solar Cells Vol.80 Issue.4, 200312, p.483-p.490, Elsevier B.V. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011103462A (ja) * | 2009-11-11 | 2011-05-26 | Internatl Business Mach Corp <Ibm> | 光起電力デバイスの形成 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7507321B2 (en) | 2009-03-24 |
| US20070272558A1 (en) | 2007-11-29 |
| WO2008039736A1 (en) | 2008-04-03 |
| EP2094882A4 (en) | 2010-02-24 |
| KR20090085583A (ko) | 2009-08-07 |
| CN101528987A (zh) | 2009-09-09 |
| EP2094882A1 (en) | 2009-09-02 |
| US20090173634A1 (en) | 2009-07-09 |
| TW200829725A (en) | 2008-07-16 |
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