KR20090085583A - 효율적인 갈륨 박막 필름 전기도금 방법 및 화학제 - Google Patents

효율적인 갈륨 박막 필름 전기도금 방법 및 화학제 Download PDF

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Publication number
KR20090085583A
KR20090085583A KR1020097008547A KR20097008547A KR20090085583A KR 20090085583 A KR20090085583 A KR 20090085583A KR 1020097008547 A KR1020097008547 A KR 1020097008547A KR 20097008547 A KR20097008547 A KR 20097008547A KR 20090085583 A KR20090085583 A KR 20090085583A
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KR
South Korea
Prior art keywords
solution
citrate
film
salt
complexing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097008547A
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English (en)
Korean (ko)
Inventor
아크수 세르다르
지아시옹 왕
블런트 엠. 바졸
Original Assignee
솔로파워, 인코포레이티드
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Application filed by 솔로파워, 인코포레이티드 filed Critical 솔로파워, 인코포레이티드
Publication of KR20090085583A publication Critical patent/KR20090085583A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Photovoltaic Devices (AREA)
KR1020097008547A 2006-09-27 2007-09-25 효율적인 갈륨 박막 필름 전기도금 방법 및 화학제 Ceased KR20090085583A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/535,927 2006-09-27
US11/535,927 US7507321B2 (en) 2006-01-06 2006-09-27 Efficient gallium thin film electroplating methods and chemistries

Publications (1)

Publication Number Publication Date
KR20090085583A true KR20090085583A (ko) 2009-08-07

Family

ID=39230522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097008547A Ceased KR20090085583A (ko) 2006-09-27 2007-09-25 효율적인 갈륨 박막 필름 전기도금 방법 및 화학제

Country Status (7)

Country Link
US (2) US7507321B2 (enExample)
EP (1) EP2094882A4 (enExample)
JP (1) JP2010505045A (enExample)
KR (1) KR20090085583A (enExample)
CN (1) CN101528987A (enExample)
TW (1) TW200829725A (enExample)
WO (1) WO2008039736A1 (enExample)

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US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US7507321B2 (en) * 2006-01-06 2009-03-24 Solopower, Inc. Efficient gallium thin film electroplating methods and chemistries
US8066865B2 (en) * 2008-05-19 2011-11-29 Solopower, Inc. Electroplating methods and chemistries for deposition of group IIIA-group via thin films
US7892413B2 (en) * 2006-09-27 2011-02-22 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers
US20080175993A1 (en) * 2006-10-13 2008-07-24 Jalal Ashjaee Reel-to-reel reaction of a precursor film to form solar cell absorber
JP2008260981A (ja) * 2007-04-10 2008-10-30 Yuken Industry Co Ltd めっき液、めっき方法およびめっき皮膜が形成された物品
US8225664B1 (en) * 2007-10-17 2012-07-24 Lsp Technologies Lamb waves for laser bond inspection
US8409418B2 (en) * 2009-02-06 2013-04-02 Solopower, Inc. Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20090188808A1 (en) * 2008-01-29 2009-07-30 Jiaxiong Wang Indium electroplating baths for thin layer deposition
ES2624637T3 (es) * 2008-05-30 2017-07-17 Atotech Deutschland Gmbh Aditivo de electrogalvanoplastia para la deposición de una aleación de un metal del grupo IB/binaria o ternaria del grupo IB-grupo IIIA/ternaria, cuaternaria o quinaria del grupo IB, el grupo IIIA-grupo VIA
US7951280B2 (en) * 2008-11-07 2011-05-31 Solopower, Inc. Gallium electroplating methods and electrolytes employing mixed solvents
WO2010065955A1 (en) * 2008-12-05 2010-06-10 Solopower, Inc. Method and apparatus for forming contact layers for continuous workpieces
US20100200417A1 (en) * 2009-02-04 2010-08-12 Impulse Devices, Inc. Method and Apparatus for Electrodeposition in Metal Acoustic Resonators
US20100213073A1 (en) * 2009-02-23 2010-08-26 International Business Machines Corporation Bath for electroplating a i-iii-vi compound, use thereof and structures containing same
WO2010126699A2 (en) 2009-04-29 2010-11-04 Hunter Douglas Industries B.V. Architectural panels with organic photovoltaic interlayers and methods of forming the same
US20110108115A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Forming a Photovoltaic Device
CN101805915A (zh) * 2010-04-20 2010-08-18 南开大学 一种电镀金属Ga和Ga合金的溶液体系及其制备方法
US8304272B2 (en) 2010-07-02 2012-11-06 International Business Machines Corporation Germanium photodetector
US8545689B2 (en) * 2010-09-02 2013-10-01 International Business Machines Corporation Gallium electrodeposition processes and chemistries
US20120055612A1 (en) 2010-09-02 2012-03-08 International Business Machines Corporation Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures
US20120143046A1 (en) * 2010-12-03 2012-06-07 Stadler Bethanie J H Electro-chemical-deposition of galfenol and the uses therof
JP5552042B2 (ja) 2010-12-27 2014-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーション プログラム解析の方法、システムおよびプログラム
EP2548998B1 (en) 2011-07-20 2015-07-01 Enthone Inc. Apparatus for electrochemical deposition of a metal
US9410259B2 (en) 2011-09-02 2016-08-09 Alliance For Sustainable Energy, Llc Electrodeposition of gallium for photovoltaics
CN102703928B (zh) * 2012-05-23 2015-04-01 中国科学院过程工程研究所 一种超声辅助强化电解提取金属镓的方法
CN103114316B (zh) * 2013-03-01 2015-10-28 沈阳师范大学 一种环境友好的镀镓用电镀液
CN103741185B (zh) * 2013-12-12 2017-01-04 深圳首创新能源股份有限公司 制备cigs吸收层的电镀生产线
WO2018140433A1 (en) 2017-01-24 2018-08-02 Mallinckrodt Nuclear Medicine Llc Gallium-69 enriched target bodies
US11103878B2 (en) 2017-04-03 2021-08-31 Yale University Electrochemical separation and recovery of metals
CN106968002A (zh) * 2017-05-09 2017-07-21 句容市博远电子有限公司 一种含稀散金属的电镀液
US20200006412A1 (en) * 2018-06-28 2020-01-02 Applied Materials, Inc. Methods and apparatus for image sensor semiconductors
CN112779013B (zh) * 2020-12-31 2022-04-22 中国科学院苏州纳米技术与纳米仿生研究所 用于光电化学刻蚀氮化镓的刻蚀液
US12057670B2 (en) 2021-03-31 2024-08-06 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method for manufacturing the same
MX2023014253A (es) 2021-06-01 2024-05-06 Nth Cycle Inc Sistema de deposicion electroquimica de metal y metodo.

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US5730852A (en) 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
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Also Published As

Publication number Publication date
EP2094882A1 (en) 2009-09-02
TW200829725A (en) 2008-07-16
US20070272558A1 (en) 2007-11-29
US20090173634A1 (en) 2009-07-09
US7507321B2 (en) 2009-03-24
EP2094882A4 (en) 2010-02-24
CN101528987A (zh) 2009-09-09
JP2010505045A (ja) 2010-02-18
WO2008039736A1 (en) 2008-04-03

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