CN101528987A - 有效的镓薄膜电镀方法和化学组合物 - Google Patents
有效的镓薄膜电镀方法和化学组合物 Download PDFInfo
- Publication number
- CN101528987A CN101528987A CNA2007800391728A CN200780039172A CN101528987A CN 101528987 A CN101528987 A CN 101528987A CN A2007800391728 A CNA2007800391728 A CN A2007800391728A CN 200780039172 A CN200780039172 A CN 200780039172A CN 101528987 A CN101528987 A CN 101528987A
- Authority
- CN
- China
- Prior art keywords
- solution
- citrate
- complexing agent
- gallium
- obtaining step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 26
- 238000009713 electroplating Methods 0.000 title abstract description 14
- 239000010409 thin film Substances 0.000 title abstract description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract description 13
- 239000008139 complexing agent Substances 0.000 claims abstract description 32
- 150000003839 salts Chemical class 0.000 claims abstract description 27
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000004070 electrodeposition Methods 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims description 46
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 13
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 12
- 239000004471 Glycine Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000006259 organic additive Substances 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims 10
- 150000001860 citric acid derivatives Chemical class 0.000 claims 6
- 229940071264 lithium citrate Drugs 0.000 claims 6
- WJSIUCDMWSDDCE-UHFFFAOYSA-K lithium citrate (anhydrous) Chemical compound [Li+].[Li+].[Li+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O WJSIUCDMWSDDCE-UHFFFAOYSA-K 0.000 claims 6
- 239000001508 potassium citrate Substances 0.000 claims 6
- 229960002635 potassium citrate Drugs 0.000 claims 6
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims 6
- 235000011082 potassium citrates Nutrition 0.000 claims 6
- 239000001509 sodium citrate Substances 0.000 claims 6
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims 6
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims 6
- FYWVTSQYJIPZLW-UHFFFAOYSA-K diacetyloxygallanyl acetate Chemical compound [Ga+3].CC([O-])=O.CC([O-])=O.CC([O-])=O FYWVTSQYJIPZLW-UHFFFAOYSA-K 0.000 claims 5
- 229940044658 gallium nitrate Drugs 0.000 claims 5
- 229910000373 gallium sulfate Inorganic materials 0.000 claims 5
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 claims 5
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 38
- 238000007747 plating Methods 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 27
- 230000008021 deposition Effects 0.000 description 22
- 239000000203 mixture Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 238000009472 formulation Methods 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910005267 GaCl3 Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- HYBBIBNJHNGZAN-UHFFFAOYSA-N furfural Chemical compound O=CC1=CC=CO1 HYBBIBNJHNGZAN-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OCYJXSUPZMNXEN-IUCAKERBSA-N (1s,2s)-(+)-2-amino-1-(4-nitrophenyl)-1,3-propanediol Chemical compound OC[C@H](N)[C@@H](O)C1=CC=C([N+]([O-])=O)C=C1 OCYJXSUPZMNXEN-IUCAKERBSA-N 0.000 description 1
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 1
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- BCSZNBYWPPFADT-UHFFFAOYSA-N 4-(1,2,4-triazol-4-ylmethyl)benzonitrile Chemical compound C1=CC(C#N)=CC=C1CN1C=NN=C1 BCSZNBYWPPFADT-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- 238000004131 Bayer process Methods 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 241001677731 Enyo Species 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 description 1
- 239000004473 Threonine Substances 0.000 description 1
- DOOTYTYQINUNNV-UHFFFAOYSA-N Triethyl citrate Chemical compound CCOC(=O)CC(O)(C(=O)OCC)CC(=O)OCC DOOTYTYQINUNNV-UHFFFAOYSA-N 0.000 description 1
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QWCKQJZIFLGMSD-UHFFFAOYSA-N alpha-aminobutyric acid Chemical class CCC(N)C(O)=O QWCKQJZIFLGMSD-UHFFFAOYSA-N 0.000 description 1
- ANBBXQWFNXMHLD-UHFFFAOYSA-N aluminum;sodium;oxygen(2-) Chemical compound [O-2].[O-2].[Na+].[Al+3] ANBBXQWFNXMHLD-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 229940024606 amino acid Drugs 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000008121 dextrose Substances 0.000 description 1
- PCYQQSKDZQTOQG-NXEZZACHSA-N dibutyl (2r,3r)-2,3-dihydroxybutanedioate Chemical compound CCCCOC(=O)[C@H](O)[C@@H](O)C(=O)OCCCC PCYQQSKDZQTOQG-NXEZZACHSA-N 0.000 description 1
- YSAVZVORKRDODB-WDSKDSINSA-N diethyl tartrate Chemical compound CCOC(=O)[C@@H](O)[C@H](O)C(=O)OCC YSAVZVORKRDODB-WDSKDSINSA-N 0.000 description 1
- XEBCWEDRGPSHQH-UHFFFAOYSA-N diisopropyl tartrate Chemical compound CC(C)OC(=O)C(O)C(O)C(=O)OC(C)C XEBCWEDRGPSHQH-UHFFFAOYSA-N 0.000 description 1
- JCCYXJAEFHYHPP-OLXYHTOASA-L dilithium;(2r,3r)-2,3-dihydroxybutanedioate Chemical compound [Li+].[Li+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O JCCYXJAEFHYHPP-OLXYHTOASA-L 0.000 description 1
- YNQRWVCLAIUHHI-UHFFFAOYSA-L dilithium;oxalate Chemical compound [Li+].[Li+].[O-]C(=O)C([O-])=O YNQRWVCLAIUHHI-UHFFFAOYSA-L 0.000 description 1
- PVRATXCXJDHJJN-UHFFFAOYSA-N dimethyl 2,3-dihydroxybutanedioate Chemical compound COC(=O)C(O)C(O)C(=O)OC PVRATXCXJDHJJN-UHFFFAOYSA-N 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195712 glutamate Natural products 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 235000006109 methionine Nutrition 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- 229940111695 potassium tartrate Drugs 0.000 description 1
- 235000011005 potassium tartrates Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
- 229910001388 sodium aluminate Inorganic materials 0.000 description 1
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 description 1
- 229940039790 sodium oxalate Drugs 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000001433 sodium tartrate Substances 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 239000001069 triethyl citrate Substances 0.000 description 1
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/535,927 US7507321B2 (en) | 2006-01-06 | 2006-09-27 | Efficient gallium thin film electroplating methods and chemistries |
| US11/535,927 | 2006-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101528987A true CN101528987A (zh) | 2009-09-09 |
Family
ID=39230522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800391728A Pending CN101528987A (zh) | 2006-09-27 | 2007-09-25 | 有效的镓薄膜电镀方法和化学组合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7507321B2 (enExample) |
| EP (1) | EP2094882A4 (enExample) |
| JP (1) | JP2010505045A (enExample) |
| KR (1) | KR20090085583A (enExample) |
| CN (1) | CN101528987A (enExample) |
| TW (1) | TW200829725A (enExample) |
| WO (1) | WO2008039736A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805915A (zh) * | 2010-04-20 | 2010-08-18 | 南开大学 | 一种电镀金属Ga和Ga合金的溶液体系及其制备方法 |
| CN102703928A (zh) * | 2012-05-23 | 2012-10-03 | 中国科学院过程工程研究所 | 一种超声辅助强化电解提取金属镓的方法 |
| CN112779013A (zh) * | 2020-12-31 | 2021-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光电化学刻蚀氮化镓的刻蚀液 |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US20070093006A1 (en) * | 2005-10-24 | 2007-04-26 | Basol Bulent M | Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto |
| US7507321B2 (en) * | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
| US7892413B2 (en) * | 2006-09-27 | 2011-02-22 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US8066865B2 (en) * | 2008-05-19 | 2011-11-29 | Solopower, Inc. | Electroplating methods and chemistries for deposition of group IIIA-group via thin films |
| US20080175993A1 (en) * | 2006-10-13 | 2008-07-24 | Jalal Ashjaee | Reel-to-reel reaction of a precursor film to form solar cell absorber |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
| JP2008260981A (ja) * | 2007-04-10 | 2008-10-30 | Yuken Industry Co Ltd | めっき液、めっき方法およびめっき皮膜が形成された物品 |
| US8225664B1 (en) * | 2007-10-17 | 2012-07-24 | Lsp Technologies | Lamb waves for laser bond inspection |
| US8409418B2 (en) * | 2009-02-06 | 2013-04-02 | Solopower, Inc. | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers |
| US8425753B2 (en) * | 2008-05-19 | 2013-04-23 | Solopower, Inc. | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
| US20090188808A1 (en) * | 2008-01-29 | 2009-07-30 | Jiaxiong Wang | Indium electroplating baths for thin layer deposition |
| EP2128903B1 (en) * | 2008-05-30 | 2017-02-22 | ATOTECH Deutschland GmbH | Electroplating additive for the deposition of a metal, a binary, ternary, quaternary or pentanary alloy of elements of group 11 (IB)-group 13 (IIIA)-group 16 (VIA) |
| US7951280B2 (en) * | 2008-11-07 | 2011-05-31 | Solopower, Inc. | Gallium electroplating methods and electrolytes employing mixed solvents |
| WO2010065955A1 (en) * | 2008-12-05 | 2010-06-10 | Solopower, Inc. | Method and apparatus for forming contact layers for continuous workpieces |
| US20100200417A1 (en) * | 2009-02-04 | 2010-08-12 | Impulse Devices, Inc. | Method and Apparatus for Electrodeposition in Metal Acoustic Resonators |
| US20100213073A1 (en) * | 2009-02-23 | 2010-08-26 | International Business Machines Corporation | Bath for electroplating a i-iii-vi compound, use thereof and structures containing same |
| WO2010126699A2 (en) | 2009-04-29 | 2010-11-04 | Hunter Douglas Industries B.V. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
| US20110108115A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Forming a Photovoltaic Device |
| US8304272B2 (en) | 2010-07-02 | 2012-11-06 | International Business Machines Corporation | Germanium photodetector |
| US20120055612A1 (en) | 2010-09-02 | 2012-03-08 | International Business Machines Corporation | Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures |
| US8545689B2 (en) | 2010-09-02 | 2013-10-01 | International Business Machines Corporation | Gallium electrodeposition processes and chemistries |
| US20120143046A1 (en) * | 2010-12-03 | 2012-06-07 | Stadler Bethanie J H | Electro-chemical-deposition of galfenol and the uses therof |
| JP5552042B2 (ja) | 2010-12-27 | 2014-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プログラム解析の方法、システムおよびプログラム |
| ES2546065T3 (es) | 2011-07-20 | 2015-09-18 | Enthone Inc. | Aparato para la deposición electroquímica de un metal |
| US9410259B2 (en) | 2011-09-02 | 2016-08-09 | Alliance For Sustainable Energy, Llc | Electrodeposition of gallium for photovoltaics |
| CN103114316B (zh) * | 2013-03-01 | 2015-10-28 | 沈阳师范大学 | 一种环境友好的镀镓用电镀液 |
| CN103741185B (zh) * | 2013-12-12 | 2017-01-04 | 深圳首创新能源股份有限公司 | 制备cigs吸收层的电镀生产线 |
| WO2018140433A1 (en) | 2017-01-24 | 2018-08-02 | Mallinckrodt Nuclear Medicine Llc | Gallium-69 enriched target bodies |
| US11103878B2 (en) | 2017-04-03 | 2021-08-31 | Yale University | Electrochemical separation and recovery of metals |
| CN106968002A (zh) * | 2017-05-09 | 2017-07-21 | 句容市博远电子有限公司 | 一种含稀散金属的电镀液 |
| US20200006412A1 (en) * | 2018-06-28 | 2020-01-02 | Applied Materials, Inc. | Methods and apparatus for image sensor semiconductors |
| US12057670B2 (en) | 2021-03-31 | 2024-08-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method for manufacturing the same |
| EP4628630A2 (en) | 2021-06-01 | 2025-10-08 | NTH Cycle, Inc. | Electrochemical metal deposition system and method |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2582377A (en) * | 1947-04-11 | 1952-01-15 | Aluminum Co Of America | Recovery of gallium from alkali metal aluminate solutions |
| US2793179A (en) * | 1955-06-13 | 1957-05-21 | Ind De L Aluminium Sa | Method of recovering gallium from an alkali aluminate lye |
| US2873232A (en) * | 1956-06-18 | 1959-02-10 | Philco Corp | Method of jet plating |
| US3061528A (en) * | 1961-07-13 | 1962-10-30 | Hughes Aircraft Co | Gallium plating and methods therefor |
| US3787463A (en) * | 1972-02-24 | 1974-01-22 | Oxy Metal Finishing Corp | Amine gold complex useful for the electrodeposition of gold and its alloys |
| US4199416A (en) * | 1977-05-03 | 1980-04-22 | Johnson, Matthey & Co., Limited | Composition for the electroplating of gold |
| US4488942A (en) * | 1983-08-05 | 1984-12-18 | Omi International Corporation | Zinc and zinc alloy electroplating bath and process |
| JPH04325688A (ja) * | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| US5304403A (en) * | 1992-09-04 | 1994-04-19 | General Moors Corporation | Zinc/nickel/phosphorus coatings and elecroless coating method therefor |
| CH687112A5 (fr) * | 1993-06-08 | 1996-09-13 | Yazaki Corp | Procédé pour déposer un précurseur du composé CuInSe(2). |
| JP2806469B2 (ja) * | 1993-09-16 | 1998-09-30 | 矢崎総業株式会社 | 太陽電池吸収層の製造方法 |
| JP3089994B2 (ja) * | 1995-07-26 | 2000-09-18 | 矢崎総業株式会社 | 銅−インジウム−硫黄−セレン薄膜の作製方法、及び銅−インジウム−硫黄−セレン系カルコパイライト結晶の製造方法 |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| US5554211A (en) * | 1995-11-15 | 1996-09-10 | Mcgean-Rohco, Inc. | Aqueous electroless plating solutions |
| US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
| EP1103637A1 (en) * | 1999-11-29 | 2001-05-30 | ENTHONE-OMI, Inc. | Method of producing AuCuGa alloy coating using electrolysis, and alloys produced by such a method |
| US20020189665A1 (en) * | 2000-04-10 | 2002-12-19 | Davis, Joseph & Negley | Preparation of CIGS-based solar cells using a buffered electrodeposition bath |
| FR2839201B1 (fr) * | 2002-04-29 | 2005-04-01 | Electricite De France | Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques |
| FR2849532B1 (fr) * | 2002-12-26 | 2005-08-19 | Electricite De France | Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US7507321B2 (en) * | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
-
2006
- 2006-09-27 US US11/535,927 patent/US7507321B2/en not_active Expired - Fee Related
-
2007
- 2007-09-25 JP JP2009530550A patent/JP2010505045A/ja active Pending
- 2007-09-25 KR KR1020097008547A patent/KR20090085583A/ko not_active Ceased
- 2007-09-25 CN CNA2007800391728A patent/CN101528987A/zh active Pending
- 2007-09-25 EP EP07814990A patent/EP2094882A4/en not_active Withdrawn
- 2007-09-25 WO PCT/US2007/079356 patent/WO2008039736A1/en not_active Ceased
- 2007-09-27 TW TW096135964A patent/TW200829725A/zh unknown
-
2009
- 2009-03-16 US US12/404,690 patent/US20090173634A1/en not_active Abandoned
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805915A (zh) * | 2010-04-20 | 2010-08-18 | 南开大学 | 一种电镀金属Ga和Ga合金的溶液体系及其制备方法 |
| CN102703928A (zh) * | 2012-05-23 | 2012-10-03 | 中国科学院过程工程研究所 | 一种超声辅助强化电解提取金属镓的方法 |
| CN102703928B (zh) * | 2012-05-23 | 2015-04-01 | 中国科学院过程工程研究所 | 一种超声辅助强化电解提取金属镓的方法 |
| CN112779013A (zh) * | 2020-12-31 | 2021-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光电化学刻蚀氮化镓的刻蚀液 |
| CN112779013B (zh) * | 2020-12-31 | 2022-04-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光电化学刻蚀氮化镓的刻蚀液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7507321B2 (en) | 2009-03-24 |
| US20070272558A1 (en) | 2007-11-29 |
| WO2008039736A1 (en) | 2008-04-03 |
| JP2010505045A (ja) | 2010-02-18 |
| EP2094882A4 (en) | 2010-02-24 |
| KR20090085583A (ko) | 2009-08-07 |
| EP2094882A1 (en) | 2009-09-02 |
| US20090173634A1 (en) | 2009-07-09 |
| TW200829725A (en) | 2008-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7507321B2 (en) | Efficient gallium thin film electroplating methods and chemistries | |
| US7892413B2 (en) | Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films | |
| US20120214293A1 (en) | Electrodepositing doped cigs thin films for photovoltaic devices | |
| US20100140098A1 (en) | Selenium containing electrodeposition solution and methods | |
| US20090283411A1 (en) | Selenium electroplating chemistries and methods | |
| US8444842B2 (en) | Electroplating methods and chemistries for deposition of group IIIA-group via thin films | |
| JP4550589B2 (ja) | ガリウムおよび／またはアルミニウムの膜への取り込みを促進するｉ−ｉｉｉ−ｖｉ化合物の薄膜の製造方法 | |
| US7951280B2 (en) | Gallium electroplating methods and electrolytes employing mixed solvents | |
| US20090188808A1 (en) | Indium electroplating baths for thin layer deposition | |
| CN102159753B (zh) | 用于光伏结构中的透明导电氧化物薄膜的形成方法 | |
| US20130112564A1 (en) | Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films | |
| US8409418B2 (en) | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers | |
| CN102877042A (zh) | 硫化铟薄膜的制备方法 | |
| CN102859046A (zh) | Ib/iiia/via族薄膜太阳能吸收器的镀覆化学物 | |
| CN101805915A (zh) | 一种电镀金属Ga和Ga合金的溶液体系及其制备方法 | |
| US20130327652A1 (en) | Plating baths and methods for electroplating selenium and selenium alloys | |
| Lee et al. | Electrochemical behavior of CIGS electrodeposition for applications to photovoltaic cells | |
| CN112144086B (zh) | 一种真空电化学沉积制备硒化物半导体的方法 | |
| US20230290899A1 (en) | Method for planarizing cis-based thin film, cis-based thin film manufactured using the same, and solar cell comprising cis-based thin film | |
| Aksu et al. | Electrochemical co-deposition of in-se and ga-se thin films for preparation of CIGS solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090909 |