EP2548998B1 - Apparatus for electrochemical deposition of a metal - Google Patents
Apparatus for electrochemical deposition of a metal Download PDFInfo
- Publication number
- EP2548998B1 EP2548998B1 EP11174683.0A EP11174683A EP2548998B1 EP 2548998 B1 EP2548998 B1 EP 2548998B1 EP 11174683 A EP11174683 A EP 11174683A EP 2548998 B1 EP2548998 B1 EP 2548998B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrolyte
- tank
- metal
- refreshing
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 73
- 239000002184 metal Substances 0.000 title claims description 73
- 238000004070 electrodeposition Methods 0.000 title claims description 22
- 239000003792 electrolyte Substances 0.000 claims description 73
- 238000007747 plating Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 26
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 17
- 229910021645 metal ion Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 240000002329 Inga feuillei Species 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- NPPQSCRMBWNHMW-UHFFFAOYSA-N Meprobamate Chemical compound NC(=O)OCC(C)(CCC)COC(N)=O NPPQSCRMBWNHMW-UHFFFAOYSA-N 0.000 description 1
- 241000791876 Selene Species 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- -1 metals ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 description 1
- 229910000342 sodium bisulfate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/16—Regeneration of process solutions
- C25D21/18—Regeneration of process solutions of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
Definitions
- the invention as described in the following relates to an apparatus for the electrochemical deposition of a metal on a substrate, which apparatus is capable of refreshing an electrolyte used for the deposition in a continuous way. Furthermore, the invention as described relates to a method of refreshing an electrolyte for the electrochemical deposition of a metal on a substrate.
- Electrochemical deposition of a metal is a well-know process used, for example, to deposit a metal coating on a substrate surface or work-piece. Electroplating is versatile used in many industrial fields, like e.g. automotive industry, aerospace industry, fitting industry, machine building, and electric/electronic industry.
- the surface on which the metal is intended to be deposited is brought into contact with a conductive electrolyte comprising ions of the metal to be deposited. While the substrate surface is brought into contact with the electrolyte an electric current between the substrate surface and a counter-electrode is applied. By the applied electric current the metals ions are reduced to the metal and deposited on the substrate surface according to the general formula: M n+ + n e - ⁇ M 0 ⁇
- a special field of electric/electronic industry in this concern is solar industry producing solar cells for transforming sunlight into electric energy. Due to boost on renewable energy, especially the demand on solar cells has increased.
- a modern type of solar cell is the so called CIGS thin film solar cell (copper, indium, gallium, sulfur and selene thin film solar cell), which is only about 3 ⁇ m thick and can also be flexible.
- a (Cu(InGa)Se 2 -layer is deposited on a substrate surface, like e.g. a glass substrate, a polymer substrate, or a metal foil.
- a substrate surface like e.g. a glass substrate, a polymer substrate, or a metal foil.
- Other combinations of layers are possible, too.
- CIS, CuGaSe 2 , or CuInGaSeS layer combinations are also known in the state of the art, as well as by-pass cells.
- the quality of the metal deposition is quite sensitive to the concentration of the metal to be deposited in the electrolyte used for the electrochemical deposition process, especially with respect to the thickness distribution of the deposited metal layer.
- US 20090315148 A1 discloses an electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells.
- the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S.
- the thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.
- US 20090173634 A1 discloses gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells.
- the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor.
- the solution may further include one or both of a Cu salt and an In salt.
- US 20100140098 A1 discloses a selenium containing electrodeposition solutions used to manufacture solar cell absorber layers.
- an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material.
- methods of electroplating using electrodeposition solutions are also described.
- US 20100059385 A1 discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system.
- the invention discloses method to fabricate semiconductor thin film Cu(InGa (SeS).sub.2 by sequentially electroplating a stack comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450 C and 700 C.
- US 20040206390 A1 discloses a photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film.
- the thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath.
- the electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
- US 20100317129 A1 discloses a methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications.
- a method in which the thickness of a sub-layer and layers there over of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.
- JP 200305579A discloses a method for alloy plating using an insoluble anode by which a plated article of high quality can be obtained at low costs.
- DE 19539865 A1 discloses a galvanic apparatus having a regeneration compartment external to the plating compartment.
- WO 2009/016291 A1 discloses a unit and a method for the electrolytic tinning of steel bands.
- Hurlen et al disclose in "Anodic dissolution of liquid gallium" (Electrochimica acta, Elsevier science publishers, Vol. 9, No. 11, 1 November 1964, pages 1433-1437 ) the dissolution rate of liquid gallium anodes in 1N hydrochloric acid, sulfuric acid and sodium hydroxide at 30.5°C.
- an apparatus for the electrochemical deposition of a metal on a substrate comprising a plating tank holding a plating electrolyte and a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte, wherein the plating tank comprises an inert electrode electrically connected to the substrate by a rectifier, and wherein the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separation means, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode are electrically connected to a rectifier.
- the apparatus comprises a plating tank holding a plating electrolyte for the electrochemical deposition of a metal on a substrate surface.
- the electrolyte comprises ions of at least one metal to be deposited.
- the ions of the metal to be deposited are dissolved in a solvent, like e.g. water.
- the ions of the metal do be deposited are comprised in the electrolyte in an amount suitable to allow a metal deposition on the substrate surface by applying an electrical current between the substrate surface and a counter electrode, e.g. an inert anode electrically connected to the substrate by e.g. a rectifier.
- an inert anode in the plating tank is advantageous, because the inert anode is dimensionally stable and allows a constant anodic current density. Furthermore, an inert anode allows a higher degree of freedom in the design of the cell.
- the electrolyte may comprise additive influencing/supporting the deposition of the metal and/or stabilizing the electrolyte. Further additives may be comprised in the electrolyte. Due to the appliance of the electrical current on the substrate surface the ions of the metal the metal to be deposited are reduced to the metal, thereby depositing a metal layer on the substrate surface. Due to the reduction of the metal ions to the metal and the deposition of the metal layer on the substrate surface, the concentration of the metal ions within the electrolyte decreases. However, the plating result depends significantly on the concentration of the ions of the metal to be plated within the electrolyte. It is therefore mandatory to maintain the concentration of the ions of the metal to be deposited in the electrolyte.
- a salt of the respective metal can be added to the electrolyte.
- the added salt will dissolve in the electrolyte and the metal ions will be reduced to the metal and will be deposited on the substrate surface, the anions of the metal salt will remain in the electrolyte which subsequently influences the features of the electrolyte with respect to, e.g. the density, or the pH-value.
- the plating process is sensitive also to these features, so that the plating result, especially the thickness distribution of the deposited metal layer, may change over the aging of the electrolyte.
- a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte is provided.
- the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separation means, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode of the metal to be deposited are electrically connected to a rectifier.
- Soluble anode in this concern means, that metal ions of the metal to be deposited are dissolved from the soluble anode by applying a current between the soluble anode and the inert electrode in the refreshing tank.
- the concentration of the ions of the metal to be deposited in the refreshing tank can be controlled by the current density and/or voltage of the current applied to the electrodes in the refreshing tank. Since the refreshing tank and the plating tank are in fluidic connection, the concentration in the plating electrolyte of the ions of the metal to be deposited can be maintained by dissolving metal ions from the soluble anode.
- this allows maintaining the ion concentration of the metals to be deposited within a narrow range without influencing the other features of the plating electrolyte, like e.g. pH-value, or density.
- the semi permeable separation means separating the at least two compartments of the refreshing tank from each other is at least one of a membrane, a diaphragm, and a micro-porous wall.
- the second compartment of the refreshing tank in which the inert electrode is located holds an electrolyte which is different from said plating electrolyte.
- the electrolyte comprised in said second compartment may be a conductive aqueous solution of a conductive salt, like e.g. sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium chloride, potassium chloride, lithium chloride, sodium sulfate, potassium sulfate, lithium sulfate, sodium hydrogen sulfate, potassium hydrogen sulfate, sodium hydrogen carbonate, potassium hydrogen carbonate, and the like.
- acids like e.g. sulfuric acid, hydrochloric acid can be used.
- the electrical conductivity between the electrolyte in the plating tank and the electrolyte in the refreshing tank is ⁇ 1*10 -4 S, preferably ⁇ 1*10 -5 S.
- the low electrical conductivity between the electrolytes in plating tank and refreshing tank is realized by a galvanic isolation of the electrolytes.
- the apparatus comprises a drop section within the fluidic connection between the plating tank and the refreshing tank. In the drop section, the fluidic stream of electrolyte between the refreshing tank and the plating tank is dissipated into separated droplets falling from an upper drop section to a lower drop section. While the upper drop section is in electrical contact with the one of the plating tank or refreshing tank, the lower drop section is in electrical contact with the other tank. Due to the separate droplets of electrolyte, the two tanks are electrically/galvanically separated from each other.
- the fluidic connection between the plating tank and the refreshing tank is long enough to enable an electrical conductivity of ⁇ 1*10 -4 S between the two tanks.
- the diameter and the length of the fluidic connection between the refreshing tank and the plating tank is to be chosen to generate an electrical resistance which is high enough to assure an electrical conductivity of ⁇ 1*10 -4 S.
- the refreshing tank comprises at least two soluble anodes of two different metals to be deposit on the substrate, each of the soluble anodes is connected to a separate rectifier.
- electrolytes used for co-deposition of metals on a substrate surface can be maintained by the apparatus according to the invention.
- the concentration of the indium within the plating electrolyte as well as the concentration of the gallium within the plating electrolyte can be maintained.
- the refreshing tank comprises a separate inert electrode per rectifier.
- the separate inert electrodes are located in separated compartments, each separated from the compartment holding the electrolyte to be refreshed by a semi permeable separation means.
- the refreshing tank comprises a kettle for holding the fused soluble anode.
- Said kettle comprises an electrical contact for contacting the fused soluble anode to the rectifier.
- the kettle is located at the bottom of the refreshing tank.
- the electrode in the plating tank comprises at least an electrode base body and a screen, said screen reducing the exchange of liquid in the direct environment of the electrode base body.
- Said screen can be e.g. a fabric screen or an inert metal mesh.
- the screen is an inert metal mesh which is isolated from said electrode base body and a current is applied to the mesh. By appliance of a current, an electrostatic barrier is formed which further reduces the exchange of liquid in the direct environment of the electrode base body. This further increases the stability of the electrolyte due to the reduced decomposition of electrolyte compounds.
- the invention relates to a method according to claim 10 of refreshing an electrolyte for electrochemical deposition of a metal on a substrate, the method comprising the steps of:
- the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal form an alkaline electrolyte.
- the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal of the group consisting of gallium, indium, and thallium.
- Fig. 1 shows a schematic view of an apparatus 100 according to the invention.
- the apparatus 100 for the electrochemical deposition of a metal on a substrate 900 comprises a plating tank 110 holding a plating electrolyte 500 and a refreshing tank 400.
- the refreshing tank 400 is in fluidic connection 200/210 to the plating tank 110 for refreshing the plating electrolyte 500.
- the plating tank 110 comprises an inert electrode 120 electrically connected to the substrate 900 by a rectifier 190.
- a current is applied by the rectifier 190.
- the refreshing tank 400 comprises a first compartment 410 and a second compartment 420, wherein the compartments 410/420 are separated from each other by a semi permeable separation means 430.
- An appropriate separation means 430 e.g. a membrane, a diaphragm, and a micro-porous wall.
- the first compartment 410 comprises at least one soluble anode 440 of a metal to be deposited on the substrate 900.
- the second compartment comprises at least one inert electrode 450.
- the inert electrode 450 and the soluble anode 440 are electrically connected to a rectifier 490. By appliance of a current between the soluble anode 440 and the inert electrode 450 metal ions are dissolved from the soluble anode 440.
- the metal ion concentration of the metal to be deposited can be maintained by the metal ions dissolved from the soluble anode 440.
- the refreshing tank may comprise a kettle 445 to hold the fused soluble anode.
- the kettle comprises an electrical contact 446 for contacting the fused soluble anode to the rectifier 490.
- Fig. 2 shows an embodiment of the inventive apparatus 100 in which the electrode 120 on the plating tank 110 is covered by a screen 150.
- the screen 150 may be a fabric reducing the liquid exchange in the near environment of the electrode 150. Due to the reduced liquid exchange, less electrolyte 500 is brought into direct contact with the surface of the electrode 120. Since decomposition of other components of the electrolyte 500 take place on the surface of the electrode 120, the reduced liquid exchange results in less decomposition of electrolyte components, like e.g. organic additives. This further increases the stability of the electrolyte and elongates the electrolytes life time.
- Fig. 3 shows a drop section 800 as it may be comprised in the fluidic connection 200 and/or 210 connecting the plating tank 110 to the refreshing tank 400.
- the drop section 800 is capable to electrically isolate the plating tank 110 from the refreshing tank 400.
- the drop section 800 comprises an inlet connected to the fluidic connection 200 or 210.
- the electrolyte entering the drop section 800 by the inlet 810 is guided to a strainer 820 separating the electrolyte into droplets 830.
- the droplets 830 are collected in a receiving section 840, to which receiving section 840 an outlet 850 is connected.
- the outlet is connected to the fluidic connection 210 or 200, respectively.
- the apparatus comprises two drop sections 800, one in each of the fluidic connections 200 and 210.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
- The invention as described in the following relates to an apparatus for the electrochemical deposition of a metal on a substrate, which apparatus is capable of refreshing an electrolyte used for the deposition in a continuous way. Furthermore, the invention as described relates to a method of refreshing an electrolyte for the electrochemical deposition of a metal on a substrate.
- Electrochemical deposition of a metal, also referred to as electroplating, is a well-know process used, for example, to deposit a metal coating on a substrate surface or work-piece. Electroplating is versatile used in many industrial fields, like e.g. automotive industry, aerospace industry, fitting industry, machine building, and electric/electronic industry.
- In general, for the electrochemical deposition of a metal on a substrate surface, the surface on which the metal is intended to be deposited is brought into contact with a conductive electrolyte comprising ions of the metal to be deposited. While the substrate surface is brought into contact with the electrolyte an electric current between the substrate surface and a counter-electrode is applied. By the applied electric current the metals ions are reduced to the metal and deposited on the substrate surface according to the general formula:
Mn+ + n e- → M0↓
- A special field of electric/electronic industry in this concern is solar industry producing solar cells for transforming sunlight into electric energy. Due to boost on renewable energy, especially the demand on solar cells has increased. A modern type of solar cell is the so called CIGS thin film solar cell (copper, indium, gallium, sulfur and selene thin film solar cell), which is only about 3 µm thick and can also be flexible.
- For the production of such CIGS thin film solar cells, for example a (Cu(InGa)Se2-layer is deposited on a substrate surface, like e.g. a glass substrate, a polymer substrate, or a metal foil. Other combinations of layers are possible, too. For example, CIS, CuGaSe2, or CuInGaSeS layer combinations are also known in the state of the art, as well as by-pass cells. The quality of the metal deposition is quite sensitive to the concentration of the metal to be deposited in the electrolyte used for the electrochemical deposition process, especially with respect to the thickness distribution of the deposited metal layer.
-
US 20090315148 A1 discloses an electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film. -
US 20090173634 A1 discloses gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt. -
US 20100140098 A1 discloses a selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions. -
US 20100059385 A1 discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system. The invention discloses method to fabricate semiconductor thin film Cu(InGa (SeS).sub.2 by sequentially electroplating a stack comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450 C and 700 C. -
US 20040206390 A1 discloses a photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film. -
US 20100317129 A1 discloses a methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers there over of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses. -
JP 200305579A -
DE 19539865 A1 discloses a galvanic apparatus having a regeneration compartment external to the plating compartment. -
WO 2009/016291 A1 discloses a unit and a method for the electrolytic tinning of steel bands. - Hurlen et al disclose in "Anodic dissolution of liquid gallium" (Electrochimica acta, Elsevier science publishers, Vol. 9, No. 11, 1 November 1964, pages 1433-1437) the dissolution rate of liquid gallium anodes in 1N hydrochloric acid, sulfuric acid and sodium hydroxide at 30.5°C.
- In
US 4,251,328 a method and an apparatus for the selective plating of liquid gallium metal on a conductive surface is disclosed. - Among other aspects it is an object of the invention to provide an improved apparatus and method the deposition of metal layers on a substrate surface. Furthermore, it is an aspect of the invention to provide an improved apparatus and method for the deposition of a metal layer as used in the production of thin film solar cells.
- Surprisingly, it was found that the object of the invention with respect to the apparatus is solved by an apparatus according to independent claim 1.
- By independent claim 1, an apparatus for the electrochemical deposition of a metal on a substrate is provided, the apparatus comprising a plating tank holding a plating electrolyte and a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte, wherein the plating tank comprises an inert electrode electrically connected to the substrate by a rectifier, and wherein the refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separation means, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode are electrically connected to a rectifier.
- The apparatus comprises a plating tank holding a plating electrolyte for the electrochemical deposition of a metal on a substrate surface. The electrolyte comprises ions of at least one metal to be deposited. The ions of the metal to be deposited are dissolved in a solvent, like e.g. water. The ions of the metal do be deposited are comprised in the electrolyte in an amount suitable to allow a metal deposition on the substrate surface by applying an electrical current between the substrate surface and a counter electrode, e.g. an inert anode electrically connected to the substrate by e.g. a rectifier.
- The use of an inert anode in the plating tank is advantageous, because the inert anode is dimensionally stable and allows a constant anodic current density. Furthermore, an inert anode allows a higher degree of freedom in the design of the cell.
- Additionally, the electrolyte may comprise additive influencing/supporting the deposition of the metal and/or stabilizing the electrolyte. Further additives may be comprised in the electrolyte. Due to the appliance of the electrical current on the substrate surface the ions of the metal the metal to be deposited are reduced to the metal, thereby depositing a metal layer on the substrate surface. Due to the reduction of the metal ions to the metal and the deposition of the metal layer on the substrate surface, the concentration of the metal ions within the electrolyte decreases. However, the plating result depends significantly on the concentration of the ions of the metal to be plated within the electrolyte. It is therefore mandatory to maintain the concentration of the ions of the metal to be deposited in the electrolyte. For maintenance of the metal ion concentration, a salt of the respective metal can be added to the electrolyte. However, while the added salt will dissolve in the electrolyte and the metal ions will be reduced to the metal and will be deposited on the substrate surface, the anions of the metal salt will remain in the electrolyte which subsequently influences the features of the electrolyte with respect to, e.g. the density, or the pH-value. However, the plating process is sensitive also to these features, so that the plating result, especially the thickness distribution of the deposited metal layer, may change over the aging of the electrolyte. According to the invention, a refreshing tank in fluidic connection to the plating tank for refreshing the plating electrolyte is provided. The refreshing tank comprises a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separation means, wherein the first compartment comprises at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode, the inert electrode and the soluble anode of the metal to be deposited are electrically connected to a rectifier. Soluble anode in this concern means, that metal ions of the metal to be deposited are dissolved from the soluble anode by applying a current between the soluble anode and the inert electrode in the refreshing tank. Accordingly, the concentration of the ions of the metal to be deposited in the refreshing tank can be controlled by the current density and/or voltage of the current applied to the electrodes in the refreshing tank. Since the refreshing tank and the plating tank are in fluidic connection, the concentration in the plating electrolyte of the ions of the metal to be deposited can be maintained by dissolving metal ions from the soluble anode. Advantageously, this allows maintaining the ion concentration of the metals to be deposited within a narrow range without influencing the other features of the plating electrolyte, like e.g. pH-value, or density.
According to an embodiment of the invention, the semi permeable separation means separating the at least two compartments of the refreshing tank from each other is at least one of a membrane, a diaphragm, and a micro-porous wall. - According to another embodiment of the invention, the second compartment of the refreshing tank in which the inert electrode is located holds an electrolyte which is different from said plating electrolyte. The electrolyte comprised in said second compartment may be a conductive aqueous solution of a conductive salt, like e.g. sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium chloride, potassium chloride, lithium chloride, sodium sulfate, potassium sulfate, lithium sulfate, sodium hydrogen sulfate, potassium hydrogen sulfate, sodium hydrogen carbonate, potassium hydrogen carbonate, and the like. Additionally, acids like e.g. sulfuric acid, hydrochloric acid can be used.
- According to an embodiment of the invention, the electrical conductivity between the electrolyte in the plating tank and the electrolyte in the refreshing tank is ≤ 1*10-4S, preferably ≤ 1*10-5S. By this, an interdependency between the current applied in the plating tank to enable deposition of a metal layer on the substrate and the current applied in the refreshing tank for dissolving metal-ions from the soluble anode can be omitted.
- According to another embodiment of the invention, the low electrical conductivity between the electrolytes in plating tank and refreshing tank is realized by a galvanic isolation of the electrolytes. According to the invention, the apparatus comprises a drop section within the fluidic connection between the plating tank and the refreshing tank. In the drop section, the fluidic stream of electrolyte between the refreshing tank and the plating tank is dissipated into separated droplets falling from an upper drop section to a lower drop section. While the upper drop section is in electrical contact with the one of the plating tank or refreshing tank, the lower drop section is in electrical contact with the other tank. Due to the separate droplets of electrolyte, the two tanks are electrically/galvanically separated from each other.
- According to another embodiment of the invention, the fluidic connection between the plating tank and the refreshing tank is long enough to enable an electrical conductivity of ≤ 1*10-4S between the two tanks. Depending on the relative conductivity of the electrolyte, the diameter and the length of the fluidic connection between the refreshing tank and the plating tank is to be chosen to generate an electrical resistance which is high enough to assure an electrical conductivity of ≤ 1*10-4S.
- According to another embodiment of the invention, the refreshing tank comprises at least two soluble anodes of two different metals to be deposit on the substrate, each of the soluble anodes is connected to a separate rectifier. By providing two soluble anodes in the refreshing tank, also electrolytes used for co-deposition of metals on a substrate surface can be maintained by the apparatus according to the invention. For example, in an electrolyte used for the deposition of indium and gallium on a substrate in the process of producing a CIGS thin film solar cell, the concentration of the indium within the plating electrolyte as well as the concentration of the gallium within the plating electrolyte can be maintained. Due to the separate rectifiers used in the refreshing tank, the dissolution of the metal from the soluble anodes can be controlled separately. This enables an accurate control and maintenance of the metal ion concentration of the metals to be deposited. According to another embodiment of the invention, the refreshing tank comprises a separate inert electrode per rectifier. By this, the accuracy of the maintenance is further enhanced. According to another preferred embodiment, the separate inert electrodes are located in separated compartments, each separated from the compartment holding the electrolyte to be refreshed by a semi permeable separation means.
- According to another embodiment of the invention, at least on soluble anode is at least during the operation of the apparatus in liquid state. Liquid state in this concern should be understood as that the soluble anode is not dimensionally stable, e.g. is fused. In a way of example, gallium has a melting point of 29.76 °C. When a plating electrolyte is operated at a temperature of about 30 °C to 40 °C, a soluble gallium electrode in the refreshing tank will be fused. According to an embodiment of the invention, the refreshing tank comprises a kettle for holding the fused soluble anode. Said kettle comprises an electrical contact for contacting the fused soluble anode to the rectifier. Preferably, the kettle is located at the bottom of the refreshing tank.
- According to another embodiment of the invention, the electrode in the plating tank comprises at least an electrode base body and a screen, said screen reducing the exchange of liquid in the direct environment of the electrode base body. Advantageously, due to the reduced exchange of liquid in the direct environment of the electrode, reactions of components of the electrolyte at the surface of the electrode, like e.g. decomposition of organic compounds, are reduced. Said screen can be e.g. a fabric screen or an inert metal mesh. In a further embodiment, the screen is an inert metal mesh which is isolated from said electrode base body and a current is applied to the mesh. By appliance of a current, an electrostatic barrier is formed which further reduces the exchange of liquid in the direct environment of the electrode base body. This further increases the stability of the electrolyte due to the reduced decomposition of electrolyte compounds.
- In another aspect, the invention relates to a method according to claim 10 of refreshing an electrolyte for electrochemical deposition of a metal on a substrate, the method comprising the steps of:
- separating at least a partial stream of the electrolyte from a plating tank and feeding said stream to a refreshing tank, said refreshing tank comprising a first compartment and a second compartment, the compartments are separated from each other by a semi permeable separation means, wherein the first compartment comprising at least one soluble anode of a metal to be deposited on the substrate and the second compartment comprises at least one inert electrode;
- connecting the inert electrode and the soluble anode electrically to a rectifier;
- setting the current and/or voltage of the rectifier to a range suitable to electrochemically dissolve metal from the soluble anode;
- re-feeding at least a partial stream of the electrolyte in the refreshing tank to the plating tank. Advantageously, by the inventive method maintenance of the plating electrolyte with respect to the concentration of the metal ion of the metal to be deposited is enabled with substantially not influencing other features of the plating electrolyte, like e.g. pH-Value or density. According to an embodiment of the inventive method, the concentration in the electrolyte of the ions of the metal to be deposited is analyzed and the current and/or voltage of the rectifier or rectifiers in the refreshing tank is set to maintain a concentration of the metal to be deposited within a variation limit of < 3% by weight, preferably < 2% by weight, most preferred < 1% by weight. Appropriate methods for analyzing the concentration of the respective metal ions are, e.g. IR-spectroscopy, AAS (atom absorption spectroscopy), UV-VIS analysis, or titrimetric analysis.
- In another aspect the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal form an alkaline electrolyte. Preferably, the invention relates to the use of an apparatus as described above for the electrochemical deposition of a metal of the group consisting of gallium, indium, and thallium.
- In the following the invention is described in terms of figures and examples, while the inventive concept is not limited the examples as described.
-
Fig. 1 shows a schematic view of an apparatus according to the invention; -
Fig. 2 shows a schematic view of an apparatus according to the invention having a screen shielded electrode; -
Fig. 3 shows a drop section as it can be comprised in an apparatus according to the invention. -
Fig. 1 shows a schematic view of anapparatus 100 according to the invention. Theapparatus 100 for the electrochemical deposition of a metal on asubstrate 900 comprises aplating tank 110 holding aplating electrolyte 500 and arefreshing tank 400. Therefreshing tank 400 is influidic connection 200/210 to theplating tank 110 for refreshing theplating electrolyte 500. Theplating tank 110 comprises aninert electrode 120 electrically connected to thesubstrate 900 by arectifier 190. For the deposition of a metal layer on the substrate 900 a current is applied by therectifier 190. Therefreshing tank 400 comprises afirst compartment 410 and asecond compartment 420, wherein thecompartments 410/420 are separated from each other by a semi permeable separation means 430. An appropriate separation means 430, e.g. a membrane, a diaphragm, and a micro-porous wall. Thefirst compartment 410 comprises at least onesoluble anode 440 of a metal to be deposited on thesubstrate 900. The second compartment comprises at least oneinert electrode 450. Theinert electrode 450 and thesoluble anode 440 are electrically connected to arectifier 490. By appliance of a current between thesoluble anode 440 and theinert electrode 450 metal ions are dissolved from thesoluble anode 440. Due to thefluidic connection 200/210 between theplating tank 110 and therefreshing tank 400, the metal ion concentration of the metal to be deposited can be maintained by the metal ions dissolved from thesoluble anode 440. Since the metal of thesoluble anode 440 may not maintain dimensional stability during operation of the inventive apparatus (it may fuse due to the operating temperature), the refreshing tank may comprise akettle 445 to hold the fused soluble anode. The kettle comprises anelectrical contact 446 for contacting the fused soluble anode to therectifier 490. -
Fig. 2 shows an embodiment of theinventive apparatus 100 in which theelectrode 120 on theplating tank 110 is covered by ascreen 150. Thescreen 150 may be a fabric reducing the liquid exchange in the near environment of theelectrode 150. Due to the reduced liquid exchange,less electrolyte 500 is brought into direct contact with the surface of theelectrode 120. Since decomposition of other components of theelectrolyte 500 take place on the surface of theelectrode 120, the reduced liquid exchange results in less decomposition of electrolyte components, like e.g. organic additives. This further increases the stability of the electrolyte and elongates the electrolytes life time. -
Fig. 3 shows adrop section 800 as it may be comprised in thefluidic connection 200 and/or 210 connecting theplating tank 110 to therefreshing tank 400. Thedrop section 800 is capable to electrically isolate theplating tank 110 from therefreshing tank 400. Thedrop section 800 comprises an inlet connected to thefluidic connection drop section 800 by theinlet 810 is guided to astrainer 820 separating the electrolyte intodroplets 830. Thedroplets 830 are collected in areceiving section 840, to which receivingsection 840 anoutlet 850 is connected. The outlet is connected to thefluidic connection drop sections 800, one in each of thefluidic connections - When introducing elements of the present invention or the preferred embodiment(s) thereof, the articles "a", "an", "the" and "said" are intended to mean that there are one or more of the elements. The terms "comprising", "including" and "having" are intended to be inclusive and mean that there may be additional elements other than the listed elements.
Claims (12)
- An electrochemical deposition apparatus (100) for the deposition of a metal on a substrate (900), the apparatus (100) comprising a plating tank (110) holding a plating electrolyte (500) and a refreshing tank (400) in fluidic connection (200/210) to the plating tank (110) for refreshing the plating electrolyte (500), wherein the plating tank (110) comprises an inert electrode (120) electrically connected to the substrate (900) by a rectifier (190), and wherein the refreshing tank (400) comprises a first compartment (410) and a second compartment (420), the compartments (410/420) are separated from each other by a semi permeable separation means (430), wherein the first compartment (410) comprises at least one soluble anode (440) of a metal to be deposited on the substrate (900) and the second compartment comprises at least one inert electrode (450), the inert electrode (450) and the soluble anode (440) are electrically connected to a rectifier (490), characterized in that the at least one soluble anode (440) is at least during operation of the apparatus (100) in liquid state and that the electrical conductivity between the electrolyte (500) in the plating tank (110) and electrolyte in the refreshing tank (400) is ≤ 1*10-4 S, wherein the apparatus (100) comprises a drop section (800) within the fluidic connection between plating tank (110) and the refreshing tank (400).
- The apparatus according to claim 1, wherein the refreshing tank (400) comprises at least two soluble anodes (440, 441) of two different metals to be deposited on the substrate (500), each of the soluble anodes (440, 441) is connected to a separate rectifier (490, 491).
- The apparatus according to claim 2, wherein the refreshing tank (400) comprises a separate inert electrode (450, 451) per rectifier (490, 491).
- The apparatus according to any of the preceding claims, wherein the refreshing tank (400) comprises a kettle (445) for holding the soluble anode (440), said kettle comprising an electrical contact (446) for contacting the soluble anode (440).
- The apparatus according to any of the preceding claims, wherein the second compartment (420) holds an electrolyte (421) which is different from the plating electrolyte (500).
- The apparatus according to any of the preceding claims, wherein the semi permeable separation means (430) is at least one of a membrane, a diaphragm, and a micro-porous wall.
- The apparatus according to any one of the preceding claims, wherein the electrode (120) comprises at least an electrode base body and a screen, said screen reducing the exchange of liquid in the direct environment of the electrode (120).
- The apparatus according to any one of the preceding claims, said apparatus comprising analyzing means (600) for analyzing the concentration in the electrolyte (500) of the metal to be deposited on the substrate (900).
- A method of refreshing an electrolyte (500) for electrochemical deposition of a metal on a substrate (900), the method comprising the steps of:- separating at least a partial stream of the electrolyte (500) from a plating tank (110) and feeding said stream to a refreshing tank (400), said refreshing tank (400) comprising a first compartment (410) and a second compartment (420), the compartments (410/420) are separated from each other by a semi permeable separation means (430), wherein the first compartment (410) comprising at least one soluble anode (440) of a metal to be deposited on the substrate (900) and the second compartment comprises at least one inert electrode (450);- connecting the inert electrode (450) and the soluble anode (440) electrically to a rectifier (490);- setting the current and/or voltage of the rectifier (490) to a range suitable to electrochemically dissolve metal from the soluble anode (440);- re-feeding at least a partial stream of the electrolyte (500) in the refreshing tank (400) to the plating tank (110), characterized in that the electrical conductivity between the electrolyte (500) in the plating tank (110) and electrolyte in the refreshing tank (400) is set to be ≤ 1*10-4 S, wherein the fluidic connection between plating tank (110) and the refreshing tank (400) comprises a drop section (800) to electrically/galvanically separate the two tanks from each other.
- The method according to claim 9, wherein the concentration in the electrolyte (900) of the ions of the metal to be deposited is analyzed and the current and/or voltage of the rectifier (490) is set to maintain a concentration of the metal to be deposited within a variation limit of < 3% by weight, preferably < 2% by weight, most preferred < 1% by weight.
- Use of an apparatus according to any one of the claims 1 to 8 for the electrochemical deposition of a metal from an alkaline electrolyte.
- The use according to claim 11, wherein the metal to be deposited is a metal of the group consisting of gallium, indium, and thallium.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES11174683.0T ES2546065T3 (en) | 2011-07-20 | 2011-07-20 | Apparatus for electrochemical deposition of a metal |
EP11174683.0A EP2548998B1 (en) | 2011-07-20 | 2011-07-20 | Apparatus for electrochemical deposition of a metal |
PCT/US2012/047535 WO2013013119A1 (en) | 2011-07-20 | 2012-07-20 | Apparatus for electrochemical deposition of a metal |
US14/234,080 US20140158545A1 (en) | 2011-07-20 | 2012-07-20 | Apparatus for electrochemical deposition of a metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11174683.0A EP2548998B1 (en) | 2011-07-20 | 2011-07-20 | Apparatus for electrochemical deposition of a metal |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2548998A1 EP2548998A1 (en) | 2013-01-23 |
EP2548998B1 true EP2548998B1 (en) | 2015-07-01 |
Family
ID=46584409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11174683.0A Active EP2548998B1 (en) | 2011-07-20 | 2011-07-20 | Apparatus for electrochemical deposition of a metal |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140158545A1 (en) |
EP (1) | EP2548998B1 (en) |
ES (1) | ES2546065T3 (en) |
WO (1) | WO2013013119A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020133581A1 (en) | 2020-12-15 | 2022-06-15 | Technische Universität Hamburg | Process and device for applying a nanolaminate to metallic workpieces |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10227707B2 (en) | 2015-07-17 | 2019-03-12 | Applied Materials, Inc. | Inert anode electroplating processor and replenisher |
JP6781658B2 (en) * | 2017-03-30 | 2020-11-04 | 株式会社荏原製作所 | Plating method and plating equipment |
WO2019144109A2 (en) * | 2018-01-22 | 2019-07-25 | Alpha-En Corporation | System and process for producing lithium |
KR20240018417A (en) * | 2021-06-10 | 2024-02-13 | 케이엘에이 코포레이션 | Non-reagent methods and process controls for measuring and monitoring halide concentrations in electrodeposition solutions for iron ternary metals and their alloys. |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB564053A (en) * | 1942-06-22 | 1944-09-11 | Gen Motors Corp | Improvements in the electrodeposition of indium |
US3291889A (en) * | 1966-02-18 | 1966-12-13 | Union Carbide Corp | Dielectric interrupter |
US4094675A (en) * | 1973-07-23 | 1978-06-13 | Licentia Patent-Verwaltungs-G.M.B.H. | Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer |
US4251328A (en) * | 1980-03-20 | 1981-02-17 | General Electric Company | Gallium plating |
US4499852A (en) * | 1980-07-15 | 1985-02-19 | Shipley Company Inc. | Apparatus for regulating plating solution in a plating bath |
US4826579A (en) * | 1982-06-25 | 1989-05-02 | Cel Systems Corporation | Electrolytic preparation of tin and other metals |
JPS6021398A (en) * | 1983-07-12 | 1985-02-02 | Rihei Tomono | Method and apparatus for alloy plating |
DE3434328A1 (en) * | 1984-09-19 | 1986-04-17 | Hoechst Ag, 6230 Frankfurt | METHOD FOR GALVANICALLY SEPARATING THE ELECTROLYTE LEADING CABLES FROM THE ELECTROLYE DREAMS OF AN ELECTROCHEMICAL CELL PACKAGE |
DE19539865A1 (en) * | 1995-10-26 | 1997-04-30 | Lea Ronal Gmbh | Continuous electroplating system |
US20020189665A1 (en) | 2000-04-10 | 2002-12-19 | Davis, Joseph & Negley | Preparation of CIGS-based solar cells using a buffered electrodeposition bath |
JP4615159B2 (en) * | 2001-08-15 | 2011-01-19 | 古河電気工業株式会社 | Alloy plating method |
US7507321B2 (en) | 2006-01-06 | 2009-03-24 | Solopower, Inc. | Efficient gallium thin film electroplating methods and chemistries |
US7736913B2 (en) | 2006-04-04 | 2010-06-15 | Solopower, Inc. | Composition control for photovoltaic thin film manufacturing |
FR2918673B1 (en) * | 2007-07-12 | 2010-11-05 | Siemens Vai Metals Tech Sas | INSTALLATION AND METHOD FOR ELECTROLYTICALLY SHAPING STEEL BANDS |
US20100140098A1 (en) | 2008-05-15 | 2010-06-10 | Solopower, Inc. | Selenium containing electrodeposition solution and methods |
US8092667B2 (en) | 2008-06-20 | 2012-01-10 | Solopower, Inc. | Electroplating method for depositing continuous thin layers of indium or gallium rich materials |
US20100059385A1 (en) | 2008-09-06 | 2010-03-11 | Delin Li | Methods for fabricating thin film solar cells |
US20110005586A1 (en) * | 2009-07-10 | 2011-01-13 | Solopower, Inc. | Electrochemical Deposition Methods for Fabricating Group IBIIIAVIA Compound Absorber Based Solar Cells |
-
2011
- 2011-07-20 EP EP11174683.0A patent/EP2548998B1/en active Active
- 2011-07-20 ES ES11174683.0T patent/ES2546065T3/en active Active
-
2012
- 2012-07-20 WO PCT/US2012/047535 patent/WO2013013119A1/en active Application Filing
- 2012-07-20 US US14/234,080 patent/US20140158545A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020133581A1 (en) | 2020-12-15 | 2022-06-15 | Technische Universität Hamburg | Process and device for applying a nanolaminate to metallic workpieces |
Also Published As
Publication number | Publication date |
---|---|
WO2013013119A1 (en) | 2013-01-24 |
ES2546065T3 (en) | 2015-09-18 |
EP2548998A1 (en) | 2013-01-23 |
US20140158545A1 (en) | 2014-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Saji et al. | Selenium electrochemistry | |
EP2548998B1 (en) | Apparatus for electrochemical deposition of a metal | |
KR20090085583A (en) | Efficient gallium thin film electroplating methods and chemistries | |
US20100126849A1 (en) | Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor | |
US8784618B2 (en) | Working electrode design for electrochemical processing of electronic components | |
US20130112564A1 (en) | Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films | |
CN106868536A (en) | The Carbon dioxide electrochemical reduction preparation of porous copper electrode and its electrode and application | |
Ivanova | The electrochemistry of intermetallic compounds: A mini-review | |
US10047449B2 (en) | Device and method for electrolytically coating an object | |
US20090188808A1 (en) | Indium electroplating baths for thin layer deposition | |
CN108018582A (en) | A kind of preparation method of electron level sulfamic acid stannous | |
US20130252020A1 (en) | Electro-Depositing Metal Layers of Uniform Thickness | |
CN102230201B (en) | Electroplating pre-treatment method of solar welding strip | |
KR940703077A (en) | Electrochemical method | |
CN102859046A (en) | Plating chemistries of group IB /IIIA / VIA thin film solar absorbers | |
Katayama et al. | Electrodeposition of nanoscaled palladium from hydrophobic ionic liquid | |
Ishizaki et al. | Effect of pH on the electrodeposition of ZnTe film from a citric acid solution | |
US11702752B2 (en) | Method for forming metal plating film | |
US20130327652A1 (en) | Plating baths and methods for electroplating selenium and selenium alloys | |
JP6809211B2 (en) | Silicon plating method and manufacturing method of silicon plated metal plate | |
Kalaivani et al. | Pulse reverse plating of silver on silver alloy | |
Chung et al. | Electrochemically fabricated alloys and semiconductors containing indium | |
Kim et al. | Photoassisted electrodeposition of a copper (I) oxide film | |
Deligianni et al. | From the Lab to Scaling‐up Thin Film Solar Absorbers | |
Gutiérrez et al. | Self-organization phenomena during electrodeposition of Co-In alloys |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
17P | Request for examination filed |
Effective date: 20130722 |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
17Q | First examination report despatched |
Effective date: 20140203 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C25D 21/18 20060101AFI20141031BHEP Ipc: C25D 17/12 20060101ALI20141031BHEP Ipc: C25D 3/54 20060101ALN20141031BHEP Ipc: C25D 21/14 20060101ALI20141031BHEP |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C25D 17/12 20060101ALI20141204BHEP Ipc: C25D 21/18 20060101AFI20141204BHEP Ipc: C25D 21/14 20060101ALI20141204BHEP Ipc: C25D 3/54 20060101ALN20141204BHEP |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
INTG | Intention to grant announced |
Effective date: 20150217 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAF | Information related to payment of grant fee modified |
Free format text: ORIGINAL CODE: EPIDOSCIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 734025 Country of ref document: AT Kind code of ref document: T Effective date: 20150715 Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602011017433 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FG2A Ref document number: 2546065 Country of ref document: ES Kind code of ref document: T3 Effective date: 20150918 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 734025 Country of ref document: AT Kind code of ref document: T Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20151002 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20151001 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20151101 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20151102 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602011017433 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150731 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150731 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
26N | No opposition filed |
Effective date: 20160404 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20151001 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 6 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20151001 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150720 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20110720 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 7 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20150720 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 8 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20150701 |
|
P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230524 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20230620 Year of fee payment: 13 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: TR Payment date: 20230623 Year of fee payment: 13 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: ES Payment date: 20230801 Year of fee payment: 13 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20230724 Year of fee payment: 13 Ref country code: DE Payment date: 20230620 Year of fee payment: 13 |