JP2010501113A - マイクロリソグラフィ投影露光装置及びマイクロリソグラフィ露光方法 - Google Patents
マイクロリソグラフィ投影露光装置及びマイクロリソグラフィ露光方法 Download PDFInfo
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- JP2010501113A JP2010501113A JP2009524157A JP2009524157A JP2010501113A JP 2010501113 A JP2010501113 A JP 2010501113A JP 2009524157 A JP2009524157 A JP 2009524157A JP 2009524157 A JP2009524157 A JP 2009524157A JP 2010501113 A JP2010501113 A JP 2010501113A
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- exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polarising Elements (AREA)
Abstract
Description
・パルス光を生成するためのパルス光源と、
・照明装置と、
・投影対物レンズと、
を含み、照明装置は投影対物レンズの物体平面(object plane)を照らし、物体平面は、投影対物レンズによって該投影対物レンズの像平面内に像形成され、
・パルス光源と照明装置との間に配置された少なくとも1つの光弾性変調器が設けられている。
本発明による装置を説明し、第1の実施形態に従ったマイクロリソグラフィ投影露光装置における偏光分布に影響を与えるために、図1は、最初に、偏光を生成するパルス光源110を示す。パルス光源110は、典型的には、例えば、193nmの動作波長を有するArFレーザのような、エキシマ・レーザである。光弾性変調器(PEM)120が、図1の矢印の方向に走る光伝播方向にパルス光源110の下流に配置され、マイクロリソグラフィ投影露光装置の照明装置130が、光伝播方向にその下流に配置される。
Claims (13)
- パルス光を生成するためのパルス光源(110、210)と、
照明装置(130、230)と、
投影対物レンズと、
を備え、前記照明装置(130、230)は前記投影対物レンズの物体平面を照らし、前記物体平面は、前記投影対物レンズにより該投影対物レンズの像平面内に像形成され、
前記パルス光源(110、210)と前記照明装置(130、230)との間に配置された少なくとも1つの光弾性変調器(120、220)が設けられたことを特徴とするマイクロリソグラフィ投影露光装置。 - 時間的に変化するリターデイションを用いて前記光弾性変調器(120、220)を励起するための励起ユニット(140、240)を備え、前記時間的に変化するリターデイションは、前記パルス光と時間的に相関されることを特徴とする請求項1に記載のマイクロリソグラフィ投影露光装置。
- 前記パルス光の個々のパルスは、前記光弾性変調器(120、220)から出てきた後、所定の偏光状態を有することを特徴とする請求項2に記載のマイクロリソグラフィ投影露光装置。
- 前記光弾性変調器(120、220)から出てきた後、前記パルス光の個々のパルスの前記偏光状態は、互いに異なることを特徴とする請求項3に記載のマイクロリソグラフィ投影露光装置。
- 前記光弾性変調器(120、220)から出てきた後、前記パルス光の少なくとも2つの連続したパルスが、それらの偏光効果に関して互いに打ち消し合うことを特徴とする請求項4に記載のマイクロリソグラフィ投影露光装置。
- 偏光に影響を与える光学素子(232)が、前記照明装置内にさらに配置されることを特徴とする、前記請求項のいずれか1項に記載のマイクロリソグラフィ投影露光装置。
- 前記偏光に影響を与える光学素子(232)は、前記照明装置の光軸を中心として周方向に互いに対して90°だけオフセットして配置された4つの偏光素子(233−236)を有し、互いに反対側にある2つの偏光素子(233、235)が、第1の偏光方向の光を透過させ、残りの2つの偏光素子(234、236)は、それらに対して垂直な第2の偏光方向の光を透過させることを特徴とする請求項6に記載のマイクロリソグラフィ投影露光装置。
- 前記偏光に影響を与える光学素子(232)は、偏光フィルタであることを特徴とする請求項6又は請求項7に記載のマイクロリソグラフィ投影露光装置。
- 前記偏光に影響を与える光学素子(232)は、前記照明装置の瞳面内に配置されることを特徴とする、請求項6乃至請求項8のいずれか1項に記載のマイクロリソグラフィ投影露光装置。
- 前記照明装置において、回折光学素子(231)が、前記偏光に影響を与える光学素子(232)の上流に光伝播方向にさらに配置され、前記素子は、前記瞳面内の前記偏光素子(233−236)だけが本質的に照らされるように形成されることを特徴とする請求項7乃至請求項9のいずれか1項に記載のマイクロリソグラフィ投影露光装置。
- 前記パルス光は、250nm未満の波長、特に200nm未満の波長、より特定的には160nm未満の波長を有することを特徴とする前記請求項のいずれか1項に記載のマイクロリソグラフィ投影露光装置。
- パルス光源(110、210)によって生成されたパルス光が、投影露光装置の照明装置(130,230)に与えられ、前記パルス光のパルスは、前記照明装置(130、230)に入る前にそれらの偏光状態の所定の変化を受ける、マイクロリソグラフィ露光方法において、前記偏光状態の変化は、前記パルス光のビーム路内に配置された少なくとも1つの光弾性変調器(120、220)を用いてもたらされることを特徴とするマイクロリソグラフィ露光方法。
- 前記投影露光装置を通る光の前記偏光状態の前記所定のパルス分解変化のための、マイクロリソグラフィ投影露光装置における光弾性変調器(120、220)の使用。
Applications Claiming Priority (3)
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DE102006038643.4 | 2006-08-17 | ||
DE200610038643 DE102006038643B4 (de) | 2006-08-17 | 2006-08-17 | Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
PCT/EP2007/057776 WO2008019936A2 (en) | 2006-08-17 | 2007-07-27 | Microlithographic projection exposure apparatus and microlithographic exposure method |
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JP2010501113A true JP2010501113A (ja) | 2010-01-14 |
JP2010501113A5 JP2010501113A5 (ja) | 2010-07-15 |
JP4730675B2 JP4730675B2 (ja) | 2011-07-20 |
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US (1) | US8675178B2 (ja) |
JP (1) | JP4730675B2 (ja) |
DE (1) | DE102006038643B4 (ja) |
TW (1) | TWI342470B (ja) |
WO (1) | WO2008019936A2 (ja) |
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JP2011512660A (ja) * | 2008-02-15 | 2011-04-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置用の光学系及びマイクロリソグラフィ露光方法 |
JP2015512156A (ja) * | 2012-03-14 | 2015-04-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学系を調節する方法 |
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DE102013204453B4 (de) | 2013-03-14 | 2019-11-21 | Carl Zeiss Smt Gmbh | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente |
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2006
- 2006-08-17 DE DE200610038643 patent/DE102006038643B4/de not_active Expired - Fee Related
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2007
- 2007-07-27 JP JP2009524157A patent/JP4730675B2/ja not_active Expired - Fee Related
- 2007-07-27 WO PCT/EP2007/057776 patent/WO2008019936A2/en active Application Filing
- 2007-08-16 TW TW96130260A patent/TWI342470B/zh not_active IP Right Cessation
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Cited By (2)
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JP2011512660A (ja) * | 2008-02-15 | 2011-04-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置用の光学系及びマイクロリソグラフィ露光方法 |
JP2015512156A (ja) * | 2012-03-14 | 2015-04-23 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の光学系を調節する方法 |
Also Published As
Publication number | Publication date |
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DE102006038643B4 (de) | 2009-06-10 |
TW200832073A (en) | 2008-08-01 |
DE102006038643A1 (de) | 2008-02-28 |
JP4730675B2 (ja) | 2011-07-20 |
US8675178B2 (en) | 2014-03-18 |
WO2008019936A2 (en) | 2008-02-21 |
TWI342470B (en) | 2011-05-21 |
US20090040498A1 (en) | 2009-02-12 |
WO2008019936A3 (en) | 2008-04-17 |
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