JP4777296B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP4777296B2 JP4777296B2 JP2007120705A JP2007120705A JP4777296B2 JP 4777296 B2 JP4777296 B2 JP 4777296B2 JP 2007120705 A JP2007120705 A JP 2007120705A JP 2007120705 A JP2007120705 A JP 2007120705A JP 4777296 B2 JP4777296 B2 JP 4777296B2
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- 230000005855 radiation Effects 0.000 claims description 113
- 239000000758 substrate Substances 0.000 claims description 76
- 230000001427 coherent effect Effects 0.000 claims description 45
- 238000012546 transfer Methods 0.000 claims description 32
- 238000005286 illumination Methods 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 12
- 230000010363 phase shift Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 33
- 238000000059 patterning Methods 0.000 description 33
- 239000011295 pitch Substances 0.000 description 17
- 230000000737 periodic effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 238000001459 lithography Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
θ=sin-1{λ/(n*P)} (2)
Pmin=λ/NA (3)
によって表すことができる。λは放射Bの波長であり、NAはビームコンバイナ115の開口数である。
[0071] 1.ステップモード:サポート構造MTおよび基板テーブルWTが基本的に静止状態に維持され、放射ビームに付与されたパターン全体がターゲット部分Cに1回で投影される(すなわち単一静止露光)。次に、基板テーブルWTがX方向および/またはY方向にシフトされ、異なるターゲット部分Cが露光される。ステップモードでは、露光フィールドの最大サイズによって、単一静止露光でイメージングされるターゲット部分Cのサイズが制限される。
[0072] 2.スキャンモード:放射ビームに付与されたパターンがターゲット部分Cに投影されている間、サポート構造MTおよび基板テーブルWTが同期スキャンされる(すなわち単一動的露光)。サポート構造MTに対する基板テーブルWTの速度および方向は、投影システムPSの倍率(縮小率)および画像反転特性によって決まる。スキャンモードでは、露光フィールドの最大サイズによって、単一動的露光におけるターゲット部分の幅(非スキャン方向の幅)が制限され、また、スキャン運動の長さによってターゲット部分の高さ(スキャン方向の高さ)が決まる。
[0073] 3.その他のモード:プログラマブルパターニングデバイスを保持するべくサポート構造MTが基本的に静止状態に維持され、放射ビームに付与されたパターンがターゲット部分Cに投影されている間、基板テーブルWTが移動またはスキャンされる。このモードでは、通常、パルス放射源が使用され、スキャン中、基板テーブルWTが移動する毎に、あるいは連続する放射パルスと放射パルスの間に、必要に応じてプログラマブルパターニングデバイスが更新される。この動作モードは、上で参照したタイプのプログラマブルミラーアレイなどのプログラマブルパターニングデバイスを利用しているマスクレスリソグラフィに容易に適用することができる。
Claims (5)
- 第1の複数の空間コヒーレント放射ビームを生成するように構成された第1の回折格子と、
前記第1の複数の空間コヒーレント放射ビームの少なくとも一部を受け取り、かつ、前記第1の複数の空間コヒーレント放射ビームに基づいて第2の複数の空間コヒーレント放射ビームを生成するように構成された第2の回折格子と、
前記第1の回折格子と前記第2の回折格子の間に配置された放射伝達デバイスであって、前記第1の複数の空間コヒーレント放射ビームが前記第2の回折格子のためのコヒーレント軸外照明を形成するよう、前記第1の複数の空間コヒーレント放射ビームの前記一部を前記第2の回折格子の方向に向けるように構成された放射伝達デバイスと、
干渉パターンを形成するために、前記第2の複数の空間コヒーレント放射ビームの少なくとも一部を基板の表面の方向に向け、かつ、結合するように適合されたビームコンバイナと、
前記ビームコンバイナの表面と前記基板の前記表面の間に液体を提供する液体供給システムと、
前記第2の回折格子と前記ビームコンバイナの間に配置され、前記第2の複数の空間コヒーレントビームのうちの1つまたは複数のビームの位相を修正し、かつ、振幅の減衰を伴う2分の1波長板と、
前記2分の1波長板を前記放射ビームの経路に挿入し、または、前記放射ビームの経路から引き出すように構成されたコントローラと、
を備え、
前記第1および第2の回折格子の各々が、一次元回折格子または二次元回折格子のいずれかであり、かつ、Alternating位相シフト回折格子またはバイナリ回折格子のいずれかであり、
前記第1の複数の空間コヒーレント放射ビームの前記一部が、前記第2の回折格子のための軸外照明を提供するように、前記リソグラフィ装置の光軸から実質的に等距離である軸外照明極を形成し、かつ、前記照明極が、前記光軸に対して実質的に直角の平面内の2つの実質的に直角の方向に沿って整列して構成されている、リソグラフィ装置。 - 前記放射伝達デバイスが、ガラス棒、レンズまたはミラーである、請求項1に記載の装置。
- 前記ビームコンバイナがマルチファセットプリズムである、請求項1に記載の装置。
- 前記第2の複数の空間コヒーレントビームの前記部分が、2つ、3つ、4つ、6つまたは8つのビームを含む、請求項1に記載の装置。
- 前記第2の回折格子と前記ビームコンバイナの間に配置された拡大システムをさらに備えた、請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/433,768 US7952803B2 (en) | 2006-05-15 | 2006-05-15 | Lithographic apparatus and device manufacturing method |
US11/433,768 | 2006-05-15 |
Publications (2)
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JP2007311783A JP2007311783A (ja) | 2007-11-29 |
JP4777296B2 true JP4777296B2 (ja) | 2011-09-21 |
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JP2007120705A Active JP4777296B2 (ja) | 2006-05-15 | 2007-05-01 | リソグラフィ装置 |
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US (1) | US7952803B2 (ja) |
JP (1) | JP4777296B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7684014B2 (en) * | 2006-12-01 | 2010-03-23 | Asml Holding B.V. | Lithographic apparatus and device manufacturing method |
NL2004323A (en) * | 2009-04-16 | 2010-10-18 | Asml Netherlands Bv | Device manufacturing method and lithographic apparatus. |
US8604452B2 (en) * | 2011-03-17 | 2013-12-10 | Cymer, Llc | Drive laser delivery systems for EUV light source |
JP2013026283A (ja) * | 2011-07-15 | 2013-02-04 | Toshiba Corp | 干渉露光装置 |
DE102012011343B4 (de) * | 2012-06-11 | 2017-05-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur Interferenzstrukturierung von Proben |
US10209526B2 (en) * | 2014-01-20 | 2019-02-19 | Yakov Soskind | Electromagnetic radiation enhancement methods and systems |
US11099483B2 (en) * | 2016-05-19 | 2021-08-24 | Nikon Corporation | Euv lithography system for dense line patterning |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1211868A (en) * | 1982-04-16 | 1986-09-23 | Yoshikazu Nishiwaki | Method of forming diffraction gratings and optical branching filter elements produced thereby |
US4596467A (en) * | 1984-03-16 | 1986-06-24 | Hughes Aircraft Company | Dissimilar superimposed grating precision alignment and gap measurement systems |
JPS61156003A (ja) * | 1984-12-27 | 1986-07-15 | Sharp Corp | 回折格子の製造方法 |
JPH0672962B2 (ja) * | 1985-07-19 | 1994-09-14 | 株式会社日立製作所 | 回折格子形成方法及び装置 |
DE3682675D1 (de) | 1986-04-29 | 1992-01-09 | Ibm Deutschland | Interferometrische maskensubstratausrichtung. |
US5156943A (en) * | 1987-10-25 | 1992-10-20 | Whitney Theodore R | High resolution imagery systems and methods |
US5142385A (en) * | 1989-07-18 | 1992-08-25 | Massachusetts Institute Of Technology | Holographic lithography |
JPH03263313A (ja) | 1990-03-13 | 1991-11-22 | Mitsubishi Electric Corp | 干渉露光装置 |
JP2657936B2 (ja) | 1991-05-20 | 1997-09-30 | 日本電信電話株式会社 | マスク照明光学系及びそれを用いる投影露光装置並びに方法 |
KR940001227B1 (ko) | 1991-07-05 | 1994-02-17 | 한국과학기술연구원 | 레이저 리소그라피장치에서 간섭계를 이용한 촛점 찾는 방법 |
JPH0567558A (ja) * | 1991-09-06 | 1993-03-19 | Nikon Corp | 露光方法 |
US5415835A (en) * | 1992-09-16 | 1995-05-16 | University Of New Mexico | Method for fine-line interferometric lithography |
US5392119A (en) * | 1993-07-13 | 1995-02-21 | Litel Instruments | Plate correction of imaging systems |
US5705321A (en) * | 1993-09-30 | 1998-01-06 | The University Of New Mexico | Method for manufacture of quantum sized periodic structures in Si materials |
DE19520563A1 (de) * | 1995-06-06 | 1996-12-12 | Zeiss Carl Fa | Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät |
US6285443B1 (en) * | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
KR950034472A (ko) * | 1994-04-06 | 1995-12-28 | 가나이 쓰토무 | 패턴형성방법 및 그것에 사용되는 투영노광장치 |
JP3491969B2 (ja) * | 1994-06-27 | 2004-02-03 | キヤノン株式会社 | 変位情報測定装置 |
KR960002536A (ja) * | 1994-06-29 | 1996-01-26 | ||
JP3676371B2 (ja) | 1994-08-29 | 2005-07-27 | ライテル インストゥルメンツ インコーポレイテッド | 回析限界に近づくための現存の像形成装置の補正板補正 |
US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
KR100214046B1 (ko) * | 1995-03-27 | 1999-08-02 | 마츠시타 덴끼 산교 가부시키가이샤 | 초해상 광헤드장치 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5771098A (en) * | 1996-09-27 | 1998-06-23 | Fed Corporation | Laser interferometric lithographic system providing automatic change of fringe spacing |
WO1998018049A1 (en) | 1996-10-22 | 1998-04-30 | The Regents Of The University Of California | Sub-micron patterning using optical lithography |
JPH10209004A (ja) | 1997-01-20 | 1998-08-07 | Nec Corp | 縮小投影露光装置及びパターン形成方法 |
US6233044B1 (en) * | 1997-01-21 | 2001-05-15 | Steven R. J. Brueck | Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns |
US6534242B2 (en) * | 1997-11-06 | 2003-03-18 | Canon Kabushiki Kaisha | Multiple exposure device formation |
US6377337B1 (en) * | 1998-05-02 | 2002-04-23 | Canon Kabushiki Kaisha | Projection exposure apparatus |
TW460758B (en) * | 1998-05-14 | 2001-10-21 | Holographic Lithography System | A holographic lithography system for generating an interference pattern suitable for selectively exposing a photosensitive material |
JP2000021720A (ja) | 1998-06-30 | 2000-01-21 | Canon Inc | 露光装置及びデバイス製造方法 |
JP4065468B2 (ja) * | 1998-06-30 | 2008-03-26 | キヤノン株式会社 | 露光装置及びこれを用いたデバイスの製造方法 |
US6178000B1 (en) * | 1998-07-08 | 2001-01-23 | International Business Machines Corporation | Monolithic symmetric interferometer for generation of variable-periodicity patterns for lithography |
US6013396A (en) * | 1998-10-30 | 2000-01-11 | Advanced Micro Devices, Inc. | Fabrication of chrome/phase grating phase shift mask by interferometric lithography |
DE19855108A1 (de) | 1998-11-30 | 2000-05-31 | Zeiss Carl Fa | Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren |
JP2000223400A (ja) | 1999-02-01 | 2000-08-11 | Canon Inc | パターン形成方法及びそれを用いた露光装置 |
US6480283B1 (en) * | 1999-05-20 | 2002-11-12 | California Institute Of Technology | Lithography system using quantum entangled photons |
US6882477B1 (en) * | 1999-11-10 | 2005-04-19 | Massachusetts Institute Of Technology | Method and system for interference lithography utilizing phase-locked scanning beams |
JP3501065B2 (ja) | 2000-02-08 | 2004-02-23 | 株式会社島津製作所 | 露光装置の調整方法及び露光装置 |
US7304775B2 (en) * | 2000-03-03 | 2007-12-04 | Coho Holdings, Llc | Actively stabilized, single input beam, interference lithography system and method |
US6661028B2 (en) * | 2000-08-01 | 2003-12-09 | United Epitaxy Company, Ltd. | Interface texturing for light-emitting device |
US6556280B1 (en) * | 2000-09-19 | 2003-04-29 | Optical Switch Corporation | Period reconfiguration and closed loop calibration of an interference lithography patterning system and method of operation |
DE10059268C1 (de) * | 2000-11-29 | 2002-08-22 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur Herstellung eines Koppelgitters für einen Wellenleiter |
US6641268B2 (en) * | 2001-02-28 | 2003-11-04 | Massachusetts Institute Of Technology | Interferometric projection system |
US6522433B2 (en) * | 2001-02-28 | 2003-02-18 | Optical Switch Corporation | Interference lithography using holey fibers |
US20020149757A1 (en) * | 2001-02-28 | 2002-10-17 | Optical Switch Corporation | Polarization vector alignment for interference lithography patterning |
US6830850B1 (en) * | 2001-03-16 | 2004-12-14 | Advanced Micro Devices, Inc. | Interferometric lithography using reflected light from applied layers |
US6762844B2 (en) * | 2001-08-24 | 2004-07-13 | Ut-Battelle, Llc | Optical microscope using an interferometric source of two-color, two-beam entangled photons |
US6577442B2 (en) * | 2001-09-27 | 2003-06-10 | Intel Corporation | Reflective spectral filtering of high power extreme ultra-violet radiation |
US6671054B2 (en) * | 2002-02-07 | 2003-12-30 | Intel Corporation | Interferometric patterning for lithography |
AUPS328402A0 (en) | 2002-06-28 | 2002-07-18 | Australian Photonics Pty Limited | Writing of photo-induced structures |
US7005235B2 (en) * | 2002-12-04 | 2006-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and systems to print contact hole patterns |
WO2004088363A1 (en) | 2003-03-25 | 2004-10-14 | Imprensa Nacional Casa Da Moeda, S.A. | Maskless optical interferometric lithography |
WO2004092830A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
TW200503057A (en) * | 2003-06-11 | 2005-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus |
US6915044B2 (en) * | 2003-07-15 | 2005-07-05 | 3M Innovative Properties Company | Tunable talbot interferometers for fiber bragg grating writing |
EP1656587A2 (en) * | 2003-07-25 | 2006-05-17 | Bruce W. Smith | Reduction smith-talbot interferometer prism for micropatterning |
US7459241B2 (en) * | 2003-09-22 | 2008-12-02 | Seagate Technology Llc | Rotary apertured interferometric lithography (RAIL) |
JP4463033B2 (ja) | 2003-10-06 | 2010-05-12 | 日東電工株式会社 | 感光性高分子膜表面上への釣鐘型凸状構造部の形成方法 |
US20050073671A1 (en) * | 2003-10-07 | 2005-04-07 | Intel Corporation | Composite optical lithography method for patterning lines of substantially equal width |
US20050074698A1 (en) * | 2003-10-07 | 2005-04-07 | Intel Corporation | Composite optical lithography method for patterning lines of significantly different widths |
US20050088633A1 (en) * | 2003-10-24 | 2005-04-28 | Intel Corporation | Composite optical lithography method for patterning lines of unequal width |
US7228034B2 (en) * | 2003-11-03 | 2007-06-05 | Intel Corporation | Interference patterning |
US7573580B2 (en) * | 2003-11-17 | 2009-08-11 | Asml Holding N.V. | Optical position measuring system and method using a low coherence light source |
US7046342B2 (en) * | 2004-01-29 | 2006-05-16 | International Business Machines Corporation | Apparatus for characterization of photoresist resolution, and method of use |
US7492442B2 (en) | 2004-08-27 | 2009-02-17 | Asml Holding N.V. | Adjustable resolution interferometric lithography system |
-
2006
- 2006-05-15 US US11/433,768 patent/US7952803B2/en active Active
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- 2007-05-01 JP JP2007120705A patent/JP4777296B2/ja active Active
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