JP2010258363A5 - - Google Patents

Download PDF

Info

Publication number
JP2010258363A5
JP2010258363A5 JP2009109445A JP2009109445A JP2010258363A5 JP 2010258363 A5 JP2010258363 A5 JP 2010258363A5 JP 2009109445 A JP2009109445 A JP 2009109445A JP 2009109445 A JP2009109445 A JP 2009109445A JP 2010258363 A5 JP2010258363 A5 JP 2010258363A5
Authority
JP
Japan
Prior art keywords
film
nitride semiconductor
semiconductor laser
ridge
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009109445A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010258363A (ja
JP5343687B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009109445A priority Critical patent/JP5343687B2/ja
Priority claimed from JP2009109445A external-priority patent/JP5343687B2/ja
Publication of JP2010258363A publication Critical patent/JP2010258363A/ja
Publication of JP2010258363A5 publication Critical patent/JP2010258363A5/ja
Application granted granted Critical
Publication of JP5343687B2 publication Critical patent/JP5343687B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009109445A 2009-04-28 2009-04-28 窒化物半導体レーザ素子 Active JP5343687B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009109445A JP5343687B2 (ja) 2009-04-28 2009-04-28 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009109445A JP5343687B2 (ja) 2009-04-28 2009-04-28 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2010258363A JP2010258363A (ja) 2010-11-11
JP2010258363A5 true JP2010258363A5 (enExample) 2012-06-07
JP5343687B2 JP5343687B2 (ja) 2013-11-13

Family

ID=43318904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009109445A Active JP5343687B2 (ja) 2009-04-28 2009-04-28 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP5343687B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5510212B2 (ja) * 2010-09-08 2014-06-04 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP5707929B2 (ja) * 2010-12-21 2015-04-30 日亜化学工業株式会社 窒化物半導体レーザ素子
JP5872790B2 (ja) * 2011-04-28 2016-03-01 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
US20240106190A1 (en) * 2021-01-22 2024-03-28 Kyocera Corporation Light-emitting element, semiconductor laser element, and manufacturing method and manufacturing apparatus thereof
JP7554125B2 (ja) * 2021-01-28 2024-09-19 日本特殊陶業株式会社 波長変換部材及びそれを備える光源装置
EP4597766A1 (en) 2022-09-27 2025-08-06 Nuvoton Technology Corporation Japan Nitride-based semiconductor light-emitting device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002185081A (ja) * 2000-12-19 2002-06-28 Ricoh Co Ltd 半導体レーザ素子
JP4785276B2 (ja) * 2001-06-11 2011-10-05 Ｏｋｉセミコンダクタ株式会社 半導体光機能素子の製造方法
JP2007103403A (ja) * 2005-09-30 2007-04-19 Sanyo Electric Co Ltd 半導体レーザ素子
JP4952184B2 (ja) * 2005-11-01 2012-06-13 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4940987B2 (ja) * 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4985374B2 (ja) * 2006-12-28 2012-07-25 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2008300802A (ja) * 2007-06-04 2008-12-11 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法

Similar Documents

Publication Publication Date Title
JP2010258363A5 (enExample)
JP2011119714A5 (ja) 半導体装置
JP2011129899A5 (ja) 半導体装置
JP2011100997A5 (ja) 半導体装置
JP2010161358A5 (ja) 薄膜トランジスタ
JP2011091382A5 (ja) 半導体装置
JP2011100992A5 (enExample)
JP2011139054A5 (ja) 半導体装置
JP2010135780A5 (ja) 半導体装置
JP2010056546A5 (ja) 半導体装置
JP2010251735A5 (ja) 半導体装置
JP2011009595A5 (ja) 半導体装置
JP2010186994A5 (ja) 半導体装置
JP2012084867A5 (ja) 半導体装置
JP2010192881A5 (ja) 半導体装置
JP2009260294A5 (enExample)
JP2010153828A5 (ja) 半導体装置
JP2007529112A5 (enExample)
JP2011086927A5 (ja) 半導体装置
JP2013168617A5 (enExample)
JP2011049548A5 (enExample)
JP2011077515A5 (ja) 半導体装置
JP2009158936A5 (enExample)
TWI456752B (zh) 半導體影像感測裝置及半導體影像感測元件與其形成方法
JP2007088418A5 (enExample)