JP2010251766A - 定向圧電膜を備えたインクジェット印刷モジュール - Google Patents
定向圧電膜を備えたインクジェット印刷モジュール Download PDFInfo
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- JP2010251766A JP2010251766A JP2010113228A JP2010113228A JP2010251766A JP 2010251766 A JP2010251766 A JP 2010251766A JP 2010113228 A JP2010113228 A JP 2010113228A JP 2010113228 A JP2010113228 A JP 2010113228A JP 2010251766 A JP2010251766 A JP 2010251766A
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- piezoelectric film
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- 238000007641 inkjet printing Methods 0.000 title claims description 18
- 239000013078 crystal Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 abstract description 22
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 230000000704 physical effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 76
- 239000002243 precursor Substances 0.000 description 17
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229940046892 lead acetate Drugs 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- LSPWIBVVGBHFQW-UHFFFAOYSA-N magnesium lead(2+) oxygen(2-) Chemical compound [O--].[O--].[Mg++].[Pb++] LSPWIBVVGBHFQW-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead based oxides
- H10N30/8554—Lead zirconium titanate based
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14266—Sheet-like thin film type piezoelectric element
Abstract
【解決手段】圧電膜18は基板10上に堆積された針状種結晶5を含む。圧電膜18は、基板10上に針状種結晶5をおく工程、基板10上の針状種結晶5の向きを定める工程及び種結晶5から圧電膜18を成長させる工程により作成される。種結晶5は、バルク結晶または結晶膜の成長の核となる結晶材料である。最終的に圧電膜18に組み込まれる定向針状結晶5は、成長して圧電膜18を形成する、結晶領域の成長の核となる。より厚い圧電膜に対しては、成長時間を長くすることができ、あるいは、所望の膜厚に達するまで膜形成プロセスを反復することができる。
【選択図】図1
Description
10 基板
18 圧電膜
43 オリフィスプレート
44 金属バリア層
45 電極パターン層
Claims (9)
- インクジェット印刷モジュールにおいて、
基板、及び
前記基板上の圧電膜
を備え、前記圧電膜が、前記基板上の同じ方向に向きが定められた複数の針状種結晶を含むことを特徴とするインクジェット印刷モジュール。 - 前記複数の針状種結晶のそれぞれが前記基板の表面に平行な長さを有することを特徴とする請求項1に記載のインクジェット印刷モジュール。
- 前記種結晶が1.5:1より高いアスペクト比を有することを特徴とする請求項1に記載のインクジェット印刷モジュール。
- 前記アスペクト比が2:1より高いことを特徴とする請求項3に記載のインクジェット印刷モジュール。
- 前記アスペクト比が2.4:1より高いことを特徴とする請求項3に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.1から25μmの範囲にある厚さを有することを特徴とする請求項1に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.5から10μmの厚さを有することを特徴とする請求項1に記載のインクジェット印刷モジュール。
- 前記圧電膜が0.1から5μmの厚さを有することを特徴とする請求項1に記載のインクジェット印刷モジュール。
- 前記インクジェット印刷モジュールが、インク流路、前記圧電膜の作動のために配置された電気コンタクト及び作動中に前記流路内のインクにジェット噴射圧をかけるための位置に配された前記圧電膜を備えることを特徴とする請求項1に記載のインクジェット印刷モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/987,702 US6620237B2 (en) | 2001-11-15 | 2001-11-15 | Oriented piezoelectric film |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003545481A Division JP4544861B2 (ja) | 2001-11-15 | 2002-11-13 | 定向圧電膜の作成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010251766A true JP2010251766A (ja) | 2010-11-04 |
Family
ID=25533490
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003545481A Expired - Lifetime JP4544861B2 (ja) | 2001-11-15 | 2002-11-13 | 定向圧電膜の作成方法 |
JP2010113228A Pending JP2010251766A (ja) | 2001-11-15 | 2010-05-17 | 定向圧電膜を備えたインクジェット印刷モジュール |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003545481A Expired - Lifetime JP4544861B2 (ja) | 2001-11-15 | 2002-11-13 | 定向圧電膜の作成方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6620237B2 (ja) |
EP (1) | EP1444389B1 (ja) |
JP (2) | JP4544861B2 (ja) |
CN (1) | CN1292104C (ja) |
AT (1) | ATE339776T1 (ja) |
AU (1) | AU2002346368A1 (ja) |
DE (1) | DE60214751T2 (ja) |
HK (1) | HK1068508A1 (ja) |
WO (1) | WO2003043824A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6515402B2 (en) * | 2001-01-24 | 2003-02-04 | Koninklijke Philips Electronics N.V. | Array of ultrasound transducers |
JP3902023B2 (ja) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | 圧電アクチュエータ、液滴噴射ヘッド、およびそれを用いた液滴噴射装置 |
US7785659B2 (en) * | 2005-03-22 | 2010-08-31 | Fujifilm Corporation | Method of manufacturing an orientation film using aerosol deposition on a seed substrate |
US9974541B2 (en) * | 2014-02-14 | 2018-05-22 | Covidien Lp | End stop detection |
MX2018011197A (es) | 2016-03-16 | 2019-05-16 | Xaar Technology Ltd | Un elemento de pelicula delgada piezoelectrica. |
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JPS61106454A (ja) * | 1984-10-31 | 1986-05-24 | 三菱鉱業セメント株式会社 | セラミツクス材料 |
JPS61106463A (ja) * | 1984-10-31 | 1986-05-24 | 三菱鉱業セメント株式会社 | セラミツクスの製造方法 |
JPS61197420A (ja) * | 1985-02-26 | 1986-09-01 | Sony Corp | 針状ペロブスカイト型チタン酸鉛微結晶の製造方法 |
JPS62172776A (ja) * | 1986-01-25 | 1987-07-29 | Matsushita Electric Works Ltd | 圧電セラミツクスの製法 |
JPS62173209A (ja) * | 1986-01-25 | 1987-07-30 | 松下電工株式会社 | 圧電セラミツクスの製法 |
JPH03237100A (ja) * | 1990-02-14 | 1991-10-22 | Daishinku Co | チタン酸金属塩繊維とその製造方法 |
JPH06116010A (ja) * | 1992-09-29 | 1994-04-26 | Toyota Motor Corp | ビスマス層状化合物の製造方法 |
JPH10158087A (ja) * | 1996-11-26 | 1998-06-16 | Toyota Central Res & Dev Lab Inc | セラミックス粉末及びその製造方法 |
JP2000307163A (ja) * | 1999-04-20 | 2000-11-02 | Seiko Epson Corp | 圧電体薄膜素子、及びその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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DE69026765T2 (de) * | 1989-07-11 | 1996-10-24 | Ngk Insulators Ltd | Einen piezoelektrischen/elektrostriktiven Film enthaltende piezoelektrischer/elektrostriktiver Antrieb |
US5265315A (en) | 1990-11-20 | 1993-11-30 | Spectra, Inc. | Method of making a thin-film transducer ink jet head |
US5500988A (en) | 1990-11-20 | 1996-03-26 | Spectra, Inc. | Method of making a perovskite thin-film ink jet transducer |
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- 2002-11-13 CN CN02826935.7A patent/CN1292104C/zh not_active Expired - Lifetime
- 2002-11-13 AT AT02784435T patent/ATE339776T1/de not_active IP Right Cessation
- 2002-11-13 AU AU2002346368A patent/AU2002346368A1/en not_active Abandoned
- 2002-11-13 EP EP02784435A patent/EP1444389B1/en not_active Expired - Lifetime
- 2002-11-13 DE DE60214751T patent/DE60214751T2/de not_active Expired - Lifetime
- 2002-11-13 JP JP2003545481A patent/JP4544861B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
JP4544861B2 (ja) | 2010-09-15 |
EP1444389A4 (en) | 2005-06-01 |
AU2002346368A1 (en) | 2003-06-10 |
WO2003043824A3 (en) | 2003-11-13 |
WO2003043824A2 (en) | 2003-05-30 |
HK1068508A1 (en) | 2005-04-22 |
CN1612954A (zh) | 2005-05-04 |
EP1444389B1 (en) | 2006-09-13 |
ATE339776T1 (de) | 2006-10-15 |
US6620237B2 (en) | 2003-09-16 |
DE60214751D1 (de) | 2006-10-26 |
AU2002346368A8 (en) | 2003-06-10 |
JP2005510073A (ja) | 2005-04-14 |
DE60214751T2 (de) | 2007-05-10 |
CN1292104C (zh) | 2006-12-27 |
US20030089303A1 (en) | 2003-05-15 |
EP1444389A2 (en) | 2004-08-11 |
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