JP2010245432A5 - - Google Patents

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Publication number
JP2010245432A5
JP2010245432A5 JP2009094877A JP2009094877A JP2010245432A5 JP 2010245432 A5 JP2010245432 A5 JP 2010245432A5 JP 2009094877 A JP2009094877 A JP 2009094877A JP 2009094877 A JP2009094877 A JP 2009094877A JP 2010245432 A5 JP2010245432 A5 JP 2010245432A5
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JP
Japan
Prior art keywords
transistor
contact
gate electrode
distance
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009094877A
Other languages
English (en)
Japanese (ja)
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JP2010245432A (ja
JP5372578B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009094877A priority Critical patent/JP5372578B2/ja
Priority claimed from JP2009094877A external-priority patent/JP5372578B2/ja
Priority to US12/756,699 priority patent/US8217459B2/en
Publication of JP2010245432A publication Critical patent/JP2010245432A/ja
Publication of JP2010245432A5 publication Critical patent/JP2010245432A5/ja
Priority to US13/493,579 priority patent/US8803237B2/en
Application granted granted Critical
Publication of JP5372578B2 publication Critical patent/JP5372578B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009094877A 2009-04-09 2009-04-09 半導体装置 Active JP5372578B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009094877A JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置
US12/756,699 US8217459B2 (en) 2009-04-09 2010-04-08 Semiconductor device
US13/493,579 US8803237B2 (en) 2009-04-09 2012-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009094877A JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2010245432A JP2010245432A (ja) 2010-10-28
JP2010245432A5 true JP2010245432A5 (cg-RX-API-DMAC10.html) 2012-05-24
JP5372578B2 JP5372578B2 (ja) 2013-12-18

Family

ID=42933696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009094877A Active JP5372578B2 (ja) 2009-04-09 2009-04-09 半導体装置

Country Status (2)

Country Link
US (2) US8217459B2 (cg-RX-API-DMAC10.html)
JP (1) JP5372578B2 (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5372578B2 (ja) * 2009-04-09 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2013110269A (ja) * 2011-11-21 2013-06-06 Samsung Electro-Mechanics Co Ltd Ｃｍｏｓ集積回路及び増幅回路

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JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
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JP5372578B2 (ja) * 2009-04-09 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置

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