JP2010183111A5 - - Google Patents
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- Publication number
- JP2010183111A5 JP2010183111A5 JP2010111768A JP2010111768A JP2010183111A5 JP 2010183111 A5 JP2010183111 A5 JP 2010183111A5 JP 2010111768 A JP2010111768 A JP 2010111768A JP 2010111768 A JP2010111768 A JP 2010111768A JP 2010183111 A5 JP2010183111 A5 JP 2010183111A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- electrode
- terminal
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 619
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 76
- 235000005811 Viola adunca Nutrition 0.000 description 105
- 240000009038 Viola odorata Species 0.000 description 105
- 235000013487 Viola odorata Nutrition 0.000 description 105
- 235000002254 Viola papilionacea Nutrition 0.000 description 105
- 230000003287 optical effect Effects 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 244000172533 Viola sororia Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010111768A JP5216807B2 (ja) | 2004-03-30 | 2010-05-14 | 半導体レーザ装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004101490 | 2004-03-30 | ||
| JP2004101490 | 2004-03-30 | ||
| JP2010111768A JP5216807B2 (ja) | 2004-03-30 | 2010-05-14 | 半導体レーザ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004288973A Division JP4583128B2 (ja) | 2004-03-30 | 2004-09-30 | 半導体レーザ装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010253606A Division JP2011029677A (ja) | 2004-03-30 | 2010-11-12 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010183111A JP2010183111A (ja) | 2010-08-19 |
| JP2010183111A5 true JP2010183111A5 (enrdf_load_stackoverflow) | 2011-01-06 |
| JP5216807B2 JP5216807B2 (ja) | 2013-06-19 |
Family
ID=40838764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010111768A Expired - Fee Related JP5216807B2 (ja) | 2004-03-30 | 2010-05-14 | 半導体レーザ装置 |
| JP2010253606A Pending JP2011029677A (ja) | 2004-03-30 | 2010-11-12 | 半導体レーザ装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010253606A Pending JP2011029677A (ja) | 2004-03-30 | 2010-11-12 | 半導体レーザ装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5216807B2 (enrdf_load_stackoverflow) |
| CN (1) | CN101478116B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582874B (zh) * | 2019-09-29 | 2021-10-01 | 山东华光光电子股份有限公司 | 一种激光光灸用复合激光器及封装方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63287085A (ja) * | 1987-05-19 | 1988-11-24 | Omron Tateisi Electronics Co | マルチビ−ム光源 |
| JP3419930B2 (ja) * | 1994-12-21 | 2003-06-23 | 三菱電機株式会社 | 半導体レーザ装置とこの半導体レーザ装置を備えた光ディスク装置 |
| JPH11112091A (ja) * | 1997-09-30 | 1999-04-23 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
| JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
| JP2002109774A (ja) * | 2000-10-02 | 2002-04-12 | Ricoh Co Ltd | 光ピックアップ |
| JP2002232061A (ja) * | 2001-02-01 | 2002-08-16 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法および半導体レーザ装置 |
| JP2004022717A (ja) * | 2002-06-14 | 2004-01-22 | Sharp Corp | 多波長レーザ装置 |
| JP2004111446A (ja) * | 2002-09-13 | 2004-04-08 | Fuji Xerox Co Ltd | 半導体レーザ素子の実装方法及びその実装方法を用いた半導体レーザ装置並びに光学モジュール |
| JP3928583B2 (ja) * | 2003-05-06 | 2007-06-13 | ソニー株式会社 | 発光装置の製造方法 |
-
2005
- 2005-03-11 CN CN 200910005323 patent/CN101478116B/zh not_active Expired - Fee Related
-
2010
- 2010-05-14 JP JP2010111768A patent/JP5216807B2/ja not_active Expired - Fee Related
- 2010-11-12 JP JP2010253606A patent/JP2011029677A/ja active Pending
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