JP2010170246A - タッチパネル、電子機器 - Google Patents
タッチパネル、電子機器 Download PDFInfo
- Publication number
- JP2010170246A JP2010170246A JP2009010764A JP2009010764A JP2010170246A JP 2010170246 A JP2010170246 A JP 2010170246A JP 2009010764 A JP2009010764 A JP 2009010764A JP 2009010764 A JP2009010764 A JP 2009010764A JP 2010170246 A JP2010170246 A JP 2010170246A
- Authority
- JP
- Japan
- Prior art keywords
- touch panel
- transistor
- photosensor
- mems
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 238000006073 displacement reaction Methods 0.000 claims abstract description 14
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 description 83
- 239000004065 semiconductor Substances 0.000 description 35
- 239000003990 capacitor Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 238000003860 storage Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 16
- 125000006850 spacer group Chemical group 0.000 description 16
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
- G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/44—Arrangements combining different electro-active layers, e.g. electrochromic, liquid crystal or electroluminescent layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Liquid Crystal (AREA)
- Position Input By Displaying (AREA)
- User Interface Of Digital Computer (AREA)
Abstract
【解決手段】一対の基板間に、複数の画素を含む画素部を有する。画素は、一対の基板のうちの一方の基板に被検出物が接触したことを検知するフォトセンサ部と、フォトセンサ部の検知結果に基づいた信号が入力されると、前記一対の基板と垂直な方向に機械的変位を生じるMEMS部と、を有する。
【選択図】図1
Description
本実施の形態では、タッチパネルについて図1〜図4を参照して説明する。
本実施の形態では、タッチパネルについて図5を参照して説明する。
タッチパネルの断面構造の一例について、図6、7を参照して説明する。最初に、表示素子として液晶素子を用いたタッチパネルの断面の一例について、図6を参照して説明する。
本実施の形態では、タッチパネルを用いた電子機器の一例について、図8を用いて説明する。
Claims (7)
- 一対の基板間に、複数の画素を含む画素部を有し、
前記画素は、
前記一対の基板のうちの一方の基板に被検出物が接触したことを検知するフォトセンサ部と、
前記フォトセンサ部の検知結果に基づいた信号が入力されると、前記一対の基板と垂直な方向に機械的変位を生じるMEMS部と、を有することを特徴とするタッチパネル。 - 請求項1において、
前記画素は、液晶素子と、前記液晶素子を制御する第1のトランジスタを含む表示素子部を有することを特徴とするタッチパネル。 - 請求項1において、
前記画素は、発光素子と、前記発光素子を制御する第1のトランジスタを含む表示素子部を有することを特徴とするタッチパネル。 - 請求項2または請求項3において、
前記第1のトランジスタは、薄膜トランジスタであることを特徴とするタッチパネル。 - 請求項1乃至請求項4のいずれか一項において、
前記フォトセンサ部は、フォトダイオードと、前記フォトダイオードを制御する第2のトランジスタを有し、
前記MEMS部は、MEMS素子と、前記MEMS素子を制御する第3のトランジスタを有することを特徴とするタッチパネル。 - 請求項5において、
前記第2のトランジスタと前記第3のトランジスタは、それぞれ薄膜トランジスタであることを特徴とするタッチパネル。 - 請求項1乃至請求項6のいずれか一項に記載の前記タッチパネルを用いた電子機器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009010764A JP5100670B2 (ja) | 2009-01-21 | 2009-01-21 | タッチパネル、電子機器 |
US12/686,564 US8847916B2 (en) | 2009-01-21 | 2010-01-13 | Touch panel and electronic device |
US14/470,967 US9389720B2 (en) | 2009-01-21 | 2014-08-28 | Touch panel and electronic device |
US15/159,063 US9874979B2 (en) | 2009-01-21 | 2016-05-19 | Touch panel and electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009010764A JP5100670B2 (ja) | 2009-01-21 | 2009-01-21 | タッチパネル、電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010170246A true JP2010170246A (ja) | 2010-08-05 |
JP2010170246A5 JP2010170246A5 (ja) | 2011-12-01 |
JP5100670B2 JP5100670B2 (ja) | 2012-12-19 |
Family
ID=42336572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009010764A Expired - Fee Related JP5100670B2 (ja) | 2009-01-21 | 2009-01-21 | タッチパネル、電子機器 |
Country Status (2)
Country | Link |
---|---|
US (3) | US8847916B2 (ja) |
JP (1) | JP5100670B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9261998B2 (en) | 2010-03-08 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and electronic system |
KR20160112219A (ko) * | 2015-03-18 | 2016-09-28 | 삼성전자주식회사 | 이벤트 기반 센서 및 프로세서의 동작 방법 |
WO2016181524A1 (ja) * | 2015-05-13 | 2016-11-17 | 凸版印刷株式会社 | 液晶表示装置 |
KR20170083709A (ko) * | 2016-01-08 | 2017-07-19 | 삼성디스플레이 주식회사 | 표시 장치 |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5100670B2 (ja) * | 2009-01-21 | 2012-12-19 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
JP5396335B2 (ja) | 2009-05-28 | 2014-01-22 | 株式会社半導体エネルギー研究所 | タッチパネル |
US8624875B2 (en) * | 2009-08-24 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving touch panel |
KR102114011B1 (ko) * | 2010-01-15 | 2020-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 구동하는 방법 |
KR101889382B1 (ko) | 2010-01-20 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 및 전자 시스템 |
WO2011099336A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
KR101830196B1 (ko) * | 2010-02-12 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
WO2011102183A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011111549A1 (en) * | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101770550B1 (ko) * | 2010-03-12 | 2017-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 |
US8830278B2 (en) | 2010-04-09 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for driving the same |
CN102834861B (zh) | 2010-04-09 | 2016-02-10 | 株式会社半导体能源研究所 | 液晶显示设备和驱动该液晶显示设备的方法 |
JP5749975B2 (ja) | 2010-05-28 | 2015-07-15 | 株式会社半導体エネルギー研究所 | 光検出装置、及び、タッチパネル |
KR101758297B1 (ko) | 2010-06-04 | 2017-07-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
JP5823740B2 (ja) | 2010-06-16 | 2015-11-25 | 株式会社半導体エネルギー研究所 | 入出力装置 |
JP5766519B2 (ja) | 2010-06-16 | 2015-08-19 | 株式会社半導体エネルギー研究所 | 入出力装置 |
JP5797471B2 (ja) | 2010-06-16 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 入出力装置 |
WO2011158948A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing power storage device |
US8564529B2 (en) | 2010-06-21 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
US9473714B2 (en) | 2010-07-01 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Solid-state imaging device and semiconductor display device |
US9286848B2 (en) | 2010-07-01 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
US8988337B2 (en) | 2010-07-02 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
CN102971784B (zh) | 2010-07-02 | 2016-08-03 | 株式会社半导体能源研究所 | 液晶显示装置及驱动液晶显示装置的方法 |
JP5792524B2 (ja) | 2010-07-02 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 装置 |
US9336739B2 (en) | 2010-07-02 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
TWI541782B (zh) | 2010-07-02 | 2016-07-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
JP2012048220A (ja) | 2010-07-26 | 2012-03-08 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びその駆動方法 |
JP5825895B2 (ja) | 2010-08-06 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US8643580B2 (en) | 2010-08-31 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
JP2012256819A (ja) | 2010-09-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP6081694B2 (ja) | 2010-10-07 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 光検出装置 |
US9103724B2 (en) | 2010-11-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device |
US8730416B2 (en) | 2010-12-17 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP5774974B2 (ja) | 2010-12-22 | 2015-09-09 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
US9167234B2 (en) | 2011-02-14 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101899178B1 (ko) | 2011-02-16 | 2018-09-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9035860B2 (en) | 2011-02-16 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9443455B2 (en) | 2011-02-25 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of pixels |
US8994763B2 (en) | 2011-03-25 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of the same |
US9024927B2 (en) | 2011-06-15 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the same |
US8988411B2 (en) | 2011-07-08 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101925495B1 (ko) | 2011-07-15 | 2018-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 구동 방법 |
US9200952B2 (en) | 2011-07-15 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photodetector and an analog arithmetic circuit |
KR101962261B1 (ko) | 2011-07-15 | 2019-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
KR20130010834A (ko) | 2011-07-19 | 2013-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
TWI575494B (zh) | 2011-08-19 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置的驅動方法 |
WO2013099537A1 (en) | 2011-12-26 | 2013-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Motion recognition device |
WO2013133143A1 (en) | 2012-03-09 | 2013-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
US9541386B2 (en) | 2012-03-21 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Distance measurement device and distance measurement system |
FR2989829B1 (fr) * | 2012-04-20 | 2014-04-11 | Commissariat Energie Atomique | Capteur tactile photosensible |
US9916793B2 (en) | 2012-06-01 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving the same |
US8872120B2 (en) * | 2012-08-23 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and method for driving the same |
KR102069683B1 (ko) | 2012-08-24 | 2020-01-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치 |
JP5634462B2 (ja) * | 2012-08-31 | 2014-12-03 | 京セラドキュメントソリューションズ株式会社 | 表示入力装置および画像形成装置 |
DE102013217278B4 (de) | 2012-09-12 | 2017-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung |
US10222911B2 (en) * | 2013-04-12 | 2019-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of the same |
KR102082425B1 (ko) * | 2013-06-10 | 2020-02-28 | 삼성디스플레이 주식회사 | 평판표시장치 |
US9360564B2 (en) | 2013-08-30 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
US9454265B2 (en) | 2013-09-23 | 2016-09-27 | Qualcomm Incorporated | Integration of a light collection light-guide with a field sequential color display |
US9395072B2 (en) | 2013-11-13 | 2016-07-19 | Industrial Technology Research Institute | Illumination device |
US9224790B2 (en) * | 2013-11-13 | 2015-12-29 | Industrial Technology Research Institute | Illumination device |
US20150138100A1 (en) * | 2013-11-20 | 2015-05-21 | Chih-Chung Lin | Touch module with photoelectric conversion layer |
JP6553406B2 (ja) | 2014-05-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | プログラム、及び情報処理装置 |
TWI539343B (zh) * | 2014-07-08 | 2016-06-21 | 中華大學 | 靜電和壓電式的觸控面板 |
US9729809B2 (en) | 2014-07-11 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device or electronic device |
TWI687852B (zh) * | 2015-12-25 | 2020-03-11 | 啟耀光電股份有限公司 | 電子裝置 |
WO2020053692A1 (ja) | 2018-09-14 | 2020-03-19 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
CN113383611A (zh) | 2019-02-15 | 2021-09-10 | 株式会社半导体能源研究所 | 显示装置、显示模块及电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001154780A (ja) * | 1999-11-30 | 2001-06-08 | Sony Corp | 力触覚呈示装置及び触感覚表現方法 |
JP2006091462A (ja) * | 2004-09-24 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2006285785A (ja) * | 2005-04-01 | 2006-10-19 | Fujitsu Ten Ltd | タッチパネル装置 |
JP2008262204A (ja) * | 2008-04-11 | 2008-10-30 | Sony Corp | 画像表示装置 |
JP2010532043A (ja) * | 2007-06-26 | 2010-09-30 | イマージョン コーポレーション | マルチタッチの触知タッチパネルアクチュエータ機構のための方法および装置 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07244337A (ja) | 1994-03-04 | 1995-09-19 | Semiconductor Energy Lab Co Ltd | 情報入出力装置 |
JPH09114591A (ja) | 1995-10-12 | 1997-05-02 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びその表示方法 |
US6972753B1 (en) | 1998-10-02 | 2005-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel, display device provided with touch panel and electronic equipment provided with display device |
US6597348B1 (en) | 1998-12-28 | 2003-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Information-processing device |
TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
JP4112184B2 (ja) | 2000-01-31 | 2008-07-02 | 株式会社半導体エネルギー研究所 | エリアセンサ及び表示装置 |
US6747638B2 (en) | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
KR100771258B1 (ko) | 2000-05-09 | 2007-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 본인 인증 시스템과 본인 인증 방법 및 휴대 전화 장치 |
JP4364452B2 (ja) | 2000-05-09 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 携帯型情報通信装置 |
US6747290B2 (en) | 2000-12-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Information device |
US7583250B2 (en) | 2003-03-12 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7394919B2 (en) * | 2004-06-01 | 2008-07-01 | Lumidigm, Inc. | Multispectral biometric imaging |
US20060283917A1 (en) * | 2003-04-09 | 2006-12-21 | The Regents Of The University Of California | Method of soldering or brazing articles having surfaces that are difficult to bond |
WO2005101178A2 (en) * | 2004-04-14 | 2005-10-27 | Koninklijke Philips Electronics N.V. | Touch sensitive display |
US7310180B2 (en) * | 2004-11-05 | 2007-12-18 | Silicon Light Machines Corporation | Dielectric spacer for enhanced squeeze-film damping of movable members of MEMS devices |
US7344907B2 (en) * | 2004-11-19 | 2008-03-18 | International Business Machines Corporation | Apparatus and methods for encapsulating microelectromechanical (MEM) devices on a wafer scale |
US7755582B2 (en) * | 2005-02-23 | 2010-07-13 | Pixtronix, Incorporated | Display methods and apparatus |
US7560789B2 (en) | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7683429B2 (en) | 2005-05-31 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Microstructure and manufacturing method of the same |
US7642612B2 (en) | 2005-06-17 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI401803B (zh) | 2005-06-30 | 2013-07-11 | Semiconductor Energy Lab | 微結構、微機械、有機電晶體、電氣設備、及其製造方法 |
US7875483B2 (en) | 2005-08-10 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microelectromechanical system |
TWI404924B (zh) | 2005-08-26 | 2013-08-11 | Semiconductor Energy Lab | 粒子偵測感測器、製造粒子偵測感測器的方法、以及使用粒子偵測感測器偵測粒子的方法 |
US7767543B2 (en) | 2005-09-06 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a micro-electro-mechanical device with a folded substrate |
US7834829B2 (en) * | 2005-10-03 | 2010-11-16 | Hewlett-Packard Development Company, L.P. | Control circuit for overcoming stiction |
US7528529B2 (en) | 2005-10-17 | 2009-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
US8043950B2 (en) | 2005-10-26 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI395258B (zh) | 2005-11-11 | 2013-05-01 | Semiconductor Energy Lab | 微結構以及微機電系統的製造方法 |
US7732241B2 (en) | 2005-11-30 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Microstructure and manufacturing method thereof and microelectromechanical system |
US7808253B2 (en) | 2005-12-02 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Test method of microstructure body and micromachine |
JP2007183706A (ja) | 2006-01-04 | 2007-07-19 | Epson Imaging Devices Corp | タッチセンサシステム |
US7741687B2 (en) | 2006-03-10 | 2010-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Microstructure, semiconductor device, and manufacturing method of the microstructure |
US8008735B2 (en) | 2006-03-20 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Micromachine device with a spatial portion formed within |
KR101416512B1 (ko) | 2006-05-18 | 2014-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 미소 구조체, 마이크로머신, 미소 구조체 및 마이크로머신의 제조방법 |
US7642114B2 (en) | 2006-07-19 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical device and manufacturing method thereof |
JP5227502B2 (ja) * | 2006-09-15 | 2013-07-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の駆動方法、液晶表示装置及び電子機器 |
US20080158217A1 (en) | 2006-12-28 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7973316B2 (en) * | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US7859498B2 (en) * | 2007-04-26 | 2010-12-28 | Hewlett-Packard Development Company, L.P. | Display device having multiplexing resistors within resin layer |
JP5125390B2 (ja) * | 2007-10-15 | 2013-01-23 | セイコーエプソン株式会社 | 光源装置及び画像表示装置並びに光量補正方法 |
JP5202236B2 (ja) | 2007-11-13 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 微小電気機械スイッチ及びその作製方法 |
US20090141004A1 (en) * | 2007-12-03 | 2009-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7999335B2 (en) | 2007-12-05 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Micromachine and method for manufacturing the same |
JP5100670B2 (ja) * | 2009-01-21 | 2012-12-19 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
JP5396335B2 (ja) * | 2009-05-28 | 2014-01-22 | 株式会社半導体エネルギー研究所 | タッチパネル |
US7999995B2 (en) * | 2009-09-28 | 2011-08-16 | Sharp Laboratories Of America, Inc. | Full color range interferometric modulation |
JP2011123876A (ja) * | 2009-11-12 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP5866089B2 (ja) * | 2009-11-20 | 2016-02-17 | 株式会社半導体エネルギー研究所 | 電子機器 |
CN102725784B (zh) * | 2009-12-18 | 2016-03-23 | 株式会社半导体能源研究所 | 具有光学传感器的显示设备及其驱动方法 |
WO2011099368A1 (en) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
CN102812421B (zh) * | 2010-02-19 | 2016-05-18 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
-
2009
- 2009-01-21 JP JP2009010764A patent/JP5100670B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-13 US US12/686,564 patent/US8847916B2/en not_active Expired - Fee Related
-
2014
- 2014-08-28 US US14/470,967 patent/US9389720B2/en not_active Expired - Fee Related
-
2016
- 2016-05-19 US US15/159,063 patent/US9874979B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001154780A (ja) * | 1999-11-30 | 2001-06-08 | Sony Corp | 力触覚呈示装置及び触感覚表現方法 |
JP2006091462A (ja) * | 2004-09-24 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2006285785A (ja) * | 2005-04-01 | 2006-10-19 | Fujitsu Ten Ltd | タッチパネル装置 |
JP2010532043A (ja) * | 2007-06-26 | 2010-09-30 | イマージョン コーポレーション | マルチタッチの触知タッチパネルアクチュエータ機構のための方法および装置 |
JP2008262204A (ja) * | 2008-04-11 | 2008-10-30 | Sony Corp | 画像表示装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9261998B2 (en) | 2010-03-08 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and electronic system |
KR20160112219A (ko) * | 2015-03-18 | 2016-09-28 | 삼성전자주식회사 | 이벤트 기반 센서 및 프로세서의 동작 방법 |
KR102402678B1 (ko) * | 2015-03-18 | 2022-05-26 | 삼성전자주식회사 | 이벤트 기반 센서 및 프로세서의 동작 방법 |
WO2016181524A1 (ja) * | 2015-05-13 | 2016-11-17 | 凸版印刷株式会社 | 液晶表示装置 |
JP6065125B1 (ja) * | 2015-05-13 | 2017-01-25 | 凸版印刷株式会社 | 液晶表示装置 |
KR20170083709A (ko) * | 2016-01-08 | 2017-07-19 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102499288B1 (ko) * | 2016-01-08 | 2023-02-14 | 삼성디스플레이 주식회사 | 표시 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20100182282A1 (en) | 2010-07-22 |
US9874979B2 (en) | 2018-01-23 |
US20140368760A1 (en) | 2014-12-18 |
US9389720B2 (en) | 2016-07-12 |
JP5100670B2 (ja) | 2012-12-19 |
US8847916B2 (en) | 2014-09-30 |
US20160259485A1 (en) | 2016-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5100670B2 (ja) | タッチパネル、電子機器 | |
JP5781651B2 (ja) | タッチセンサを有する装置、及び表示装置 | |
JP6416851B2 (ja) | 半導体装置 | |
JP5202395B2 (ja) | タッチパネル、電子機器 | |
JP4925929B2 (ja) | 表示装置 | |
TWI406046B (zh) | 顯示器 | |
US9898144B2 (en) | Touch control display panel with touch control dual-gate thin film transistors and touch display device | |
KR101900847B1 (ko) | 표시 장치 | |
US20080084366A1 (en) | Display device | |
JP2010108489A (ja) | タッチパネル及びタッチパネルの駆動方法 | |
TWI428909B (zh) | 相反顯示方向的面板、電子裝置與電子裝置的切換方法 | |
US11640212B2 (en) | Control component, display screen, and control device | |
JP2018010829A (ja) | 表示装置 | |
JP2010092935A (ja) | センサ素子およびその駆動方法、ならびに入力装置、入力機能付き表示装置および通信デバイス | |
JP6306295B2 (ja) | 表示装置 | |
JP2018120233A (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111017 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120905 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120918 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120925 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |