JP2010130013A5 - - Google Patents

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Publication number
JP2010130013A5
JP2010130013A5 JP2009265773A JP2009265773A JP2010130013A5 JP 2010130013 A5 JP2010130013 A5 JP 2010130013A5 JP 2009265773 A JP2009265773 A JP 2009265773A JP 2009265773 A JP2009265773 A JP 2009265773A JP 2010130013 A5 JP2010130013 A5 JP 2010130013A5
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JP
Japan
Prior art keywords
mask
assisted deposition
beam assisted
forming
substrate surface
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Granted
Application number
JP2009265773A
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English (en)
Japanese (ja)
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JP2010130013A (ja
JP5756584B2 (ja
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Priority claimed from US12/324,296 external-priority patent/US8168961B2/en
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Publication of JP2010130013A publication Critical patent/JP2010130013A/ja
Publication of JP2010130013A5 publication Critical patent/JP2010130013A5/ja
Application granted granted Critical
Publication of JP5756584B2 publication Critical patent/JP5756584B2/ja
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JP2009265773A 2008-11-26 2009-11-21 レーザ・アブレーション微細機械加工用の荷電粒子ビーム・マスキング Active JP5756584B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/324,296 2008-11-26
US12/324,296 US8168961B2 (en) 2008-11-26 2008-11-26 Charged particle beam masking for laser ablation micromachining

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015111004A Division JP6129237B2 (ja) 2008-11-26 2015-05-31 レーザ・アブレーション微細機械加工用の荷電粒子ビーム・マスキング

Publications (3)

Publication Number Publication Date
JP2010130013A JP2010130013A (ja) 2010-06-10
JP2010130013A5 true JP2010130013A5 (enExample) 2013-01-24
JP5756584B2 JP5756584B2 (ja) 2015-07-29

Family

ID=41721203

Family Applications (2)

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JP2009265773A Active JP5756584B2 (ja) 2008-11-26 2009-11-21 レーザ・アブレーション微細機械加工用の荷電粒子ビーム・マスキング
JP2015111004A Active JP6129237B2 (ja) 2008-11-26 2015-05-31 レーザ・アブレーション微細機械加工用の荷電粒子ビーム・マスキング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015111004A Active JP6129237B2 (ja) 2008-11-26 2015-05-31 レーザ・アブレーション微細機械加工用の荷電粒子ビーム・マスキング

Country Status (3)

Country Link
US (2) US8168961B2 (enExample)
EP (1) EP2191927B1 (enExample)
JP (2) JP5756584B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501115B1 (en) 2003-07-14 2009-07-01 FEI Company Dual beam system
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US8524139B2 (en) * 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
KR101854287B1 (ko) * 2010-04-07 2018-05-03 에프이아이 컴파니 레이저 및 하전 입자 빔 시스템 결합
JP2013101929A (ja) 2011-11-07 2013-05-23 Fei Co 荷電粒子ビーム・システムの絞り
DE102012202519A1 (de) * 2012-02-17 2013-08-22 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht
JP6085150B2 (ja) * 2012-03-16 2017-02-22 株式会社日立ハイテクサイエンス 試料作製装置及び試料作製方法
US9216475B2 (en) 2012-03-31 2015-12-22 Fei Company System for protecting light optical components during laser ablation
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US8759764B2 (en) 2012-06-29 2014-06-24 Fei Company On-axis detector for charged particle beam system
US8766213B2 (en) 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9991090B2 (en) * 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
US9601305B2 (en) 2013-11-11 2017-03-21 Howard Hughes Medical Institute Specimen sample holder for workpiece transport apparatus
EP3174662B1 (en) 2014-07-29 2021-10-20 Gentex Corporation Method of laser ablation with reduced visual effects
WO2016054590A1 (en) 2014-10-03 2016-04-07 Gentex Corporation Second surface laser ablation
KR20200093713A (ko) 2015-06-19 2020-08-05 젠텍스 코포레이션 제2 표면 레이저 용발
US20170179201A1 (en) * 2015-12-16 2017-06-22 General Electric Company Processes for fabricating organic photodetectors and related photodetectors and systems
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
US10806635B2 (en) 2016-03-15 2020-10-20 The Procter & Gamble Company Methods and apparatuses for separating and positioning discrete articles
US11009760B2 (en) 2017-05-05 2021-05-18 Gentex Corporation Interleaving laser ablation
DE102019203493A1 (de) * 2019-03-14 2020-09-17 BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH Verfahren zur ultrahochaufgelösten Modifikation, insbesondere zur physischen Materialabtragung oder internen Materialänderung, eines Werkstücks
DE102019133658A1 (de) 2019-12-10 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente
DE102022115030A1 (de) * 2021-06-21 2022-12-22 Electronics And Telecommunications Research Institute Lasersteuerstruktur und laserkontaktierungsverfahren unter ihrer verwendung
CN117031873B (zh) * 2023-09-28 2024-01-05 上海传芯半导体有限公司 修复方法及修复装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760067A (fr) * 1969-12-09 1971-06-09 Applied Display Services Procede et appareil pour la fabrication de plaques en relief ainsi que plaques pour impression ainsi obtenues
JPS59104287A (ja) 1982-12-07 1984-06-16 Sumitomo Electric Ind Ltd レ−ザ加工法
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
US4877480A (en) * 1986-08-08 1989-10-31 Digital Equipment Corporation Lithographic technique using laser for fabrication of electronic components and the like
CA1279104C (en) * 1986-08-08 1991-01-15 Quantum Corporation Lithographic technique using laser for fabrication of electronic components and the like
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
US5221422A (en) * 1988-06-06 1993-06-22 Digital Equipment Corporation Lithographic technique using laser scanning for fabrication of electronic components and the like
JPH0220685A (ja) * 1988-07-06 1990-01-24 Hitachi Ltd レーザ加工材とその製造方法
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus
JPH04354321A (ja) * 1991-05-31 1992-12-08 Nikon Corp 薄膜除去方法
JPH05136097A (ja) * 1991-11-08 1993-06-01 Nec Corp 微細加工方法および微細加工装置
JP2890946B2 (ja) * 1991-12-20 1999-05-17 日本電気株式会社 その場形成マスクを用いた加工法
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
EP0731490A3 (en) 1995-03-02 1998-03-11 Ebara Corporation Ultra-fine microfabrication method using an energy beam
JP3464320B2 (ja) * 1995-08-02 2003-11-10 株式会社荏原製作所 高速原子線を用いた加工方法及び加工装置
US5874011A (en) 1996-08-01 1999-02-23 Revise, Inc. Laser-induced etching of multilayer materials
US5818628A (en) * 1996-12-20 1998-10-06 Clark-Mxr, Inc. Ultrashort optical pulse amplifiers incorporating a gain medium preferentially cooled along a crystalline axis
US5821549A (en) * 1997-03-03 1998-10-13 Schlumberger Technologies, Inc. Through-the-substrate investigation of flip-chip IC's
US6582857B1 (en) * 2000-03-16 2003-06-24 International Business Machines Corporation Repair of masks to promote adhesion of patches
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
JP2004512672A (ja) * 2000-06-06 2004-04-22 イーケーシー　テクノロジー，インコーポレイティド 電子材料製造法
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method
WO2003012551A1 (en) * 2001-07-27 2003-02-13 Fei Company Electron beam processing
JP3683851B2 (ja) 2001-11-29 2005-08-17 哲也 牧村 光パターニングにより無機透明材料を加工する光加工装置及び光加工方法
US7504182B2 (en) 2002-09-18 2009-03-17 Fei Company Photolithography mask repair
US6787783B2 (en) * 2002-12-17 2004-09-07 International Business Machines Corporation Apparatus and techniques for scanning electron beam based chip repair
US20050173631A1 (en) * 2004-02-11 2005-08-11 Valery Ray Determining end points during charged particle beam processing
JP2006005110A (ja) * 2004-06-17 2006-01-05 National Institute For Materials Science 微細構造の作製方法及び作製装置
US7930409B2 (en) 2005-02-23 2011-04-19 Aol Inc. Configuring output on a communication device
US20070269611A1 (en) * 2006-03-31 2007-11-22 Intematix Corporation Systems and methods of combinatorial synthesis
JP5329784B2 (ja) * 2006-08-25 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US20110163068A1 (en) 2008-01-09 2011-07-07 Mark Utlaut Multibeam System
JP2011527637A (ja) 2008-07-09 2011-11-04 エフ・イ−・アイ・カンパニー レーザ機械加工のための方法および装置
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining

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