JP2010114313A - リング状部材及びその製造方法 - Google Patents
リング状部材及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title description 21
- 239000013078 crystal Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims description 28
- 238000005520 cutting process Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 24
- 238000001020 plasma etching Methods 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 17
- 238000009826 distribution Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】ウエハにプラズマエッチング処理を施す基板処理装置においてプラズマが内部に発生する反応室に収容されるフォーカスリング24であって、円周方向に配設された4つの単結晶シリコンの円弧状部材24a〜24dからなり、各円弧状部材24a〜24dの上面24a1〜24d1や外側面24a2〜24d2には、消耗しやすい単結晶シリコンの結晶面、例えば、ミラー指数が{100}の結晶面が表れない。
【選択図】図2
Description
10,60,70 基板処理装置
11 チャンバ
12 サセプタ
17 反応室
22 静電チャック
24 フォーカスリング
24a〜24d 円弧状部材
24a1〜24d1 上面
24a2〜24d2 外側面
41,80 円柱
50 伝熱シート
61 グランド電極
71 外側電極板
83 円板
Claims (12)
- 基板にプラズマ処理を施す基板処理装置においてプラズマが内部に発生する収容室に収容されるリング状部材であって、
円周方向に配設された複数の単結晶材の円弧状部材からなり、
各円弧状部材の前記プラズマに晒される面に前記単結晶材における消耗しやすい結晶面が表れないことを特徴とするリング状部材。 - 前記消耗しやすい結晶面のミラー指数は{100}であることを特徴とする請求項1記載のリング状部材。
- 前記複数の円弧状部材の前記プラズマに晒される面に前記単結晶材における同じ結晶面が表れることを特徴とする請求項1乃至3のいずれか1項に記載のリング状部材。
- 前記基板の周縁を囲み、
前記基板の表面に平行な面と、該平行な面に垂直な面とを有し、
前記平行な面に前記単結晶材における消耗しやすい結晶面が表れないことを特徴とする請求項1乃至4のいずれか1項に記載のリング状部材。 - フォーカスリングであることを特徴とする請求項5記載のリング状部材。
- 前記基板処理装置が備える上部電極であることを特徴とする請求項5記載のリング状部材。
- 前記フォーカスリングを構成する前記単結晶材は、前記基板を構成する単結晶材と同じであることを特徴とする請求項6記載のリング状部材。
- 前記複数の円弧状部材は互いに接着剤で接着されることを特徴とする請求項1乃至8のいずれか1項に記載のリング状部材。
- 前記複数の円弧状部材は互いに融着されることを特徴とする請求項1乃至8のいずれか1項に記載のリング状部材。
- 前記複数の円弧状部材の間の融着部分はアモルファス化されていることを特徴とする請求項10記載のリング状部材。
- 基板にプラズマ処理を施す基板処理装置においてプラズマが内部に発生する収容室に収容されるリング状部材の製造方法であって、
所定の径を有する単結晶材からなる円柱状部材の周縁部から第1のリング状部材を切り出す第1の切り出しステップと、
前記円柱状部材から前記第1のリング状部材が切り出されて形成された余剰部材から前記第1のリング状部材と同じ曲率を有する複数の円弧状部材を切り出す第2の切り出しステップと、
前記複数の円弧状部材を円周方向に配設し且つ互いに接合して第2のリング状部材を形成する接合ステップとを有し、
前記第2の切り出しステップでは、各円弧状部材の前記プラズマに晒される面に前記単結晶材における消耗しやすい結晶面が表れないように前記複数の円弧状部材を切り出すことを特徴とする製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008286686A JP5100617B2 (ja) | 2008-11-07 | 2008-11-07 | リング状部材及びその製造方法 |
TW098137598A TW201034112A (en) | 2008-11-07 | 2009-11-05 | Ring-shaped member and method for manufacturing same |
US12/613,043 US20100116436A1 (en) | 2008-11-07 | 2009-11-05 | Ring-shaped member and method for manufacturing same |
CN2009102078974A CN101740297B (zh) | 2008-11-07 | 2009-11-06 | 环状部件及其制造方法 |
KR1020090107221A KR20100051576A (ko) | 2008-11-07 | 2009-11-06 | 링형상 부재 및 그 제조 방법 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2008286686A JP5100617B2 (ja) | 2008-11-07 | 2008-11-07 | リング状部材及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010114313A true JP2010114313A (ja) | 2010-05-20 |
JP5100617B2 JP5100617B2 (ja) | 2012-12-19 |
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JP2008286686A Expired - Fee Related JP5100617B2 (ja) | 2008-11-07 | 2008-11-07 | リング状部材及びその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US20100116436A1 (ja) |
JP (1) | JP5100617B2 (ja) |
KR (1) | KR20100051576A (ja) |
CN (1) | CN101740297B (ja) |
TW (1) | TW201034112A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120074210A (ko) | 2010-12-27 | 2012-07-05 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
JP2014175535A (ja) * | 2013-03-11 | 2014-09-22 | Shinko Electric Ind Co Ltd | 静電チャック装置 |
JP6146839B1 (ja) * | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | 電極用リング |
JP6176620B1 (ja) * | 2017-02-02 | 2017-08-09 | 日本新工芯技株式会社 | 電極用リング |
JP6198168B1 (ja) * | 2017-02-23 | 2017-09-20 | 日本新工芯技株式会社 | 電極用リング |
JP6270191B1 (ja) * | 2017-05-17 | 2018-01-31 | 日本新工芯技株式会社 | 保護材用リング |
JP6278498B1 (ja) * | 2017-05-19 | 2018-02-14 | 日本新工芯技株式会社 | リング状部材の製造方法及びリング状部材 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120083129A1 (en) * | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
US9478428B2 (en) | 2010-10-05 | 2016-10-25 | Skyworks Solutions, Inc. | Apparatus and methods for shielding a plasma etcher electrode |
JP5762798B2 (ja) * | 2011-03-31 | 2015-08-12 | 東京エレクトロン株式会社 | 天井電極板及び基板処理載置 |
KR200483130Y1 (ko) * | 2012-10-20 | 2017-04-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 세그먼트화된 포커스 링 조립체 |
US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
JP6544902B2 (ja) * | 2014-09-18 | 2019-07-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102604063B1 (ko) * | 2016-08-18 | 2023-11-21 | 삼성전자주식회사 | 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치 |
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CN112658804B (zh) * | 2020-12-22 | 2023-01-06 | 宁波江丰电子材料股份有限公司 | 一种半导体聚焦环的加工设备及方法 |
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- 2009-11-05 US US12/613,043 patent/US20100116436A1/en not_active Abandoned
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JP2018137404A (ja) * | 2017-02-23 | 2018-08-30 | 日本新工芯技株式会社 | 電極用リング |
WO2018155337A1 (ja) * | 2017-02-23 | 2018-08-30 | 日本新工芯技株式会社 | 電極用リング |
US11348764B2 (en) | 2017-02-23 | 2022-05-31 | Thinkon New Technology Japan Corporation | Electrode ring |
JP6270191B1 (ja) * | 2017-05-17 | 2018-01-31 | 日本新工芯技株式会社 | 保護材用リング |
WO2018211787A1 (ja) * | 2017-05-17 | 2018-11-22 | 日本新工芯技株式会社 | 保護材用リング |
US11545345B2 (en) | 2017-05-17 | 2023-01-03 | Thinkon New Technology Japan Corporation | Protective material ring |
JP6278498B1 (ja) * | 2017-05-19 | 2018-02-14 | 日本新工芯技株式会社 | リング状部材の製造方法及びリング状部材 |
US10984988B2 (en) | 2017-05-19 | 2021-04-20 | Thinkon New Technology Japan Corporation | Method of manufacturing ring-shaped member and ring-shaped member |
TWI765004B (zh) * | 2017-05-19 | 2022-05-21 | 日商日本新工芯技股份有限公司 | 環狀構件之製造方法及環狀構件 |
KR102214968B1 (ko) * | 2017-05-19 | 2021-02-09 | 니혼신코우신기 가부시끼가이샤 | 링 형상 부재의 제조 방법 및 링 형상 부재 |
KR20190002635A (ko) * | 2017-05-19 | 2019-01-08 | 니혼신코우신기 가부시끼가이샤 | 링 형상 부재의 제조 방법 및 링 형상 부재 |
WO2018211788A1 (ja) * | 2017-05-19 | 2018-11-22 | 日本新工芯技株式会社 | リング状部材の製造方法及びリング状部材 |
US11551915B2 (en) | 2017-05-19 | 2023-01-10 | Thinkon New Technology Japan Corporation | Method of manufacturing ring-shaped member and ring-shaped member |
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TW201034112A (en) | 2010-09-16 |
JP5100617B2 (ja) | 2012-12-19 |
CN101740297B (zh) | 2012-11-14 |
US20100116436A1 (en) | 2010-05-13 |
CN101740297A (zh) | 2010-06-16 |
KR20100051576A (ko) | 2010-05-17 |
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